Abstract: A diffractive optical element (DOE) corrector for use with three different wavelengths includes a first diffractive element on a first surface of a first material, the first diffractive element diffracting a first wavelength of the three wavelengths, while directing a majority of light of second and third wavelengths of the three wavelengths into a zero-th order, and a second diffractive element on a second surface of a second material, the second material being different from the first material, the second surface being different from and in an optical path of the first surface, the second diffractive element diffracting the second wavelength, while directing a majority of light of the first and third wavelengths into a zero-th order.

Abstract: A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the active region, patterning the insulating layer to form first and second bit lines separated from and parallel to each other on the active region, forming a memory element for storing data in a nonvolatile state, wherein the memory element passes across the first and second bit lines, and forming a word line on the insulating layer and the memory element.

Abstract: In a nonvolatile semiconductor memory device, and a method of fabricating the same, the nonvolatile semiconductor memory device includes a cell doping region and source/drain regions in a semiconductor substrate, the cell doping region being doped as a first conductive type, a channel region disposed between the source/drain regions in the semiconductor substrate, a tunnel doping region of the first conductive type formed in a predetermined region of an upper portion of the cell doping region, the tunnel doping region being doped in a higher concentration than that of the cell doping region, a tunnel insulating layer formed on a surface of the semiconductor substrate on the tunnel doping region, a gate insulating layer surrounding the tunnel insulating layer and covering the channel region and the cell doping region exposed beyond the tunnel doping region, and a gate electrode covering the tunnel insulating layer and on the gate insulating layer.

Abstract: A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.

Abstract: A wireless communication system, and method using multiple antennas, includes a base station that applies predetermined weight vectors to multi-user signals and transmits the multi-user signals through a plurality of transmission antennas, and a plurality of mobile stations that receive and process the multi-user signals, wherein each mobile station includes a signal reception unit that processes the multi-user signals, and a feedback signal generation unit that estimates channel characteristics, over which the multi-user signals have been transmitted, from the multi-user signals, classifies a plurality of weight vectors to be applied to the estimated channel characteristics into a plurality of sets such that vectors orthogonal to one another are classified into a single set, selects a set maximizing a transmission capacity from among the classified sets, and feeds back weight indexes of weight vectors included in the selected set and weighted channel information to the base station.

Abstract: A diffractive coupler coupling light between an opto-electronic element and a waveguide minimizes variation in coupling over an offset range, while providing good coupling efficiency. The offset range may be along the optical axis and/or radial. The diffractive coupler has a long depth of field and no best focus.

Abstract: A sensing apparatus includes a fluxgate module which outputs an analog signal corresponding to terrestrial magnetism using a fluxgate having a magnetic substance core and a driving coil, and an analog-to-digital (A/D) converter which converts an analog signal output from the fluxgate module into a digital signal. The fluxgate module includes first and second current amplifiers for exciting the magnetic substance core by applying pulses to first and second ends of the driving coil, and a pulse restricting part for driving the first and second current amplifiers to apply the pulses and for stopping driving the first and second current amplifiers when converting the analog signal into the digital signal is completed.

Abstract: An ink-jet printhead using a laser to expel ink includes an ink chamber to be filled with ink and an ink channel to supply the ink chamber with ink, the ink chamber and the ink channel formed in a passageway plate, a cover plate provided on the passageway plate, an ink ejection hole formed through the cover plate at a position corresponding to the ink chamber, a condenser lens provided on a bottom surface of the passageway plate at a position corresponding to the ink chamber, the laser irradiating a laser beam through the condenser lens and directly onto the ink contained in the ink chamber, to generate pressurized waves that vibrate a surface of the ink which causes an ink droplet to be expelled through the ink ejection hole from the surface of the ink.

Abstract: A thin camera having sub-pixel resolution includes an array of micro-cameras. Each micro-camera includes a lens, a plurality of sensors of size p, and a plurality of macro-pixels of size d having a feature of size q. The feature size q smaller than p and provides a resolution for the micro-camera greater than p. The smallest feature in the micro-cameras determines the resolution of the thin camera. Each macro-pixel may have any array of m features of size q, where q=d/m. Additional micro-cameras may be included to increase power.

Abstract: A method of manufacturing a semiconductor memory device includes forming a carbon-containing layer on a semiconductor substrate, forming an insulating layer pattern on the carbon-containing layer, the insulating layer pattern partially exposing an upper surface of the carbon-containing layer, dry-etching the exposed portion of the carbon-containing layer, to form a carbon-containing layer pattern for defining a storage node hole, forming a bottom electrode inside the storage node hole, forming a dielectric layer on the bottom electrode inside the storage node hole, the dielectric layer covering the bottom electrode, and forming an upper electrode on the dielectric layer inside the storage node hole, the upper electrode covering the dielectric layer.

Abstract: A system including a plurality of transmission lines, a transmitter outputting respective signals to each of the plurality of transmission lines, a receiver receiving each of the plurality of signals via respective transmission lines, the receiver including a connection path connected to a termination voltage, a plurality of termination circuits distributed along the connection path, each termination circuit receiving a unique termination voltage from the connection path, receiving a respective signal and outputting a terminated input signal, a reference voltage generator including multiple reference voltage generator units connected to a common voltage, each reference voltage generator unit uniquely receiving at least one unique termination voltage and outputting a reference voltage, and a plurality of data input buffers receiving respective signals and an appropriate reference voltage of the multiple reference voltages output from the reference voltage generator.

Abstract: A light guide member for guiding light received from a light source unit, the light source unit illuminating light toward the light guide member, the light guide member may include a plurality of first grooves on a first side of the light guide member, the first grooves extending along a first direction, and a plurality of first projections projecting from surfaces of the first grooves.

Abstract: An image sensor device and method for forming the same include a photodiode formed in a substrate, at least one electrical interconnection line electrically associated with the photodiode, a light passageway having a light inlet, the light passageway being positioned in alignment with the photodiode, a color filter positioned over the light inlet of the light passageway and a lens positioned over the color filter in alignment with the light passageway wherein the at least one electrical interconnection line includes a copper interconnection formation having a plurality of interlayer dielectric layers in a stacked configuration with a diffusion barrier layer between adjacent interlayer dielectric layers, and a barrier metal layer between the copper interconnection formation and the plurality of interlayer dielectric layers and intervening diffusion barrier layers. An image sensor device may employ copper interconnections if a barrier metal layer is removed from above a photodiode.

Abstract: A method of driving an ink-jet printhead, the ink-jet printhead having a pressure chamber to be filled with ink, a piezoelectric actuator for varying a volume of the pressure chamber, and a nozzle, through which an ink droplet is ejected, connected to the pressure chamber, the method including applying a driving pulse to the piezoelectric actuator to change the volume of the pressure chamber, thereby ejecting the ink droplet through the nozzle due to a change in pressure in the pressure chamber caused by the change in volume of the pressure chamber, and changing a volume of the ink droplet ejected through the nozzle by maintaining a rising time of the driving pulse constant and adjusting a duration time of a maximum voltage of the driving pulse.

Abstract: In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a portion of the semiconductor substrate in the cell region and in the peripheral circuit region including an isolation region defining an active region, a portion of the active region protruding above an upper surface of the isolation region to define at least two active channels, a gate dielectric layer formed over the active region of the semiconductor substrate including the at least two protruding active channels, a gate electrode formed over the gate dielectric layer and the isolation region of the semiconductor substrate, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.

Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.

Abstract: A non-volatile memory device includes a pair of source/drain regions disposed in a semiconductor substrate, having a channel region between them. A charge storage oxide layer is disposed on the channel region and overlaps part of each of the pair of source/drain regions. A gate electrode is disposed on the charge storage oxide layer. At least one halo implantation region is formed in the semiconductor substrate adjacent to one of the pair of source/drain regions, and overlapping the charge storage oxide layer. A program operation is performed by trapping electrons in the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed, and an erase operation is performed by injecting holes into the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed.

Abstract: A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A second tungsten layer is formed on the first tungsten layer with a chemical vapor deposition (CVD) method. A third tungsten layer is formed on the second tungsten layer with the ALD method to complete the structured tungsten layer.