Abstract: In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink to be ejected formed on an upper surface of the substrate, a restrictor, which is a path through which ink is supplied from an ink reservoir to the ink chamber, perforating a bottom surface of the substrate and a bottom surface of the ink chamber, a nozzle plate, which is stacked on the upper surface of the substrate and forms an upper wall of the ink chamber, a nozzle perforating the nozzle plate at a position corresponding to a center of the ink chamber, a heater formed in the nozzle plate to surround the nozzle, and a conductor for applying a current to the heater.
Abstract: A metal oxide semiconductor (MOS) transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes a semiconductor substrate and an isolation layer formed in a predetermined region of the semiconductor substrate to define an active region. A channel trench region is disposed within the active region to cross the active region. A gate insulating layer is disposed to cover sidewalls and a bottom of the channel trench region. The MOS transistor has a gate pattern that fills the channel trench region and crosses above the active region. A portion of the sidewall of the gate pattern is recessed at an upper corner of the channel trench region and has a width smaller than the width of the top of the gate pattern and smaller than the width of the channel trench region.
Abstract: A method of manufacturing a NOR-type mask ROM device includes forming a first gate electrode for an OFF cell and a second gate electrode for an ON cell on a semiconductor substrate of a first conductivity type. To code the mask ROM device, a plurality of source/drain regions is formed by implanting impurities of a second conductivity type, opposite the first conductivity type, into the semiconductor substrate adjacent only to one side of the first gate electrode and adjacent to both sides of the second gate electrode. To prevent misalignment of a bit line contact hole with a contact region, additional impurities are implanted only into a bit line contact region of the mask ROM device region. When a semiconductor device formed on the same substrate as the mask ROM device includes a double diffused region, additional implantation for both may be realized simultaneously.
Type:
Grant
Filed:
August 3, 2007
Date of Patent:
April 29, 2008
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Hyun-Khe Yoo, Weon-ho Park, Byoung-ho Kim
Abstract: A piezoelectric actuator for providing a driving force to a pressure chamber of an ink-jet printhead for ejecting ink by deforming a vibration plate, the vibration plate forming an upper wall of the pressure chamber, the piezoelectric actuator including a lower electrode formed on the vibration plate, a piezoelectric film having either: (a) peripheral portions, the piezoelectric film formed on the lower electrode at a position that corresponds to the pressure chamber and having a space between the peripheral portions and the lower electrode, or (b) a lateral surface, the piezoelectric film formed on the lower electrode at a position that corresponds to the pressure chamber, the lateral surface of the piezoelectric film substantially forming a right angle with respect to a top surface of the lower electrode, and an upper electrode formed on the piezoelectric film for applying a voltage to the piezoelectric film.
Type:
Grant
Filed:
March 22, 2004
Date of Patent:
April 29, 2008
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Seung-mo Lim, Jae-woo Chung, Jae-chang Lee
Abstract: A fixing structure for a circuit board includes at least one board mounting hole in the circuit board, the board mounting hole having a guide hole and an insertion hole, and at least one board mounting member inserted through the board mounting hole, the board mounting member having a main body, a cover, and an insertion portion therebetween, wherein the insertion portion has a cross-sectional area smaller than either of the main body or the cover and is capable of fitting in the insertion hole of the board mounting hole.
Abstract: A circuit board having a first IC chip mounted thereon, and a first heat sink having a base portion disposed to contact a surface of the first IC chip and having a plurality of heat-dissipating fins, wherein the heat-dissipating fins extend away from the base portion and are inclined at an angle other than 90° from an imaginary horizontal plane.
Abstract: Apparatuses and methods for efficiently transmitting and receiving multicast data having a scalable data structure preferably provide for the transmission of a first data stream at a basic data rate using a first modulation scheme that can be received by all receivers in a communications system, while simultaneously providing for the transmission of at least a second data stream at a higher data rate using a second modulation scheme that can be received by groups of receivers having higher data rate capabilities, thereby maximizing data communications to all receivers in the communications system. The transmitting apparatus preferably includes a stream generator that divides multicast data into a plurality of multicast streams, an encoding processor, a header processor that generates a header for each of the encoded multicast streams, a stream modulator that modulates each of the encoded multicast streams, and a frame generator for generating a transmission frame.
Abstract: A display module having an improved heatsink effect may include a display panel reproducing an image, a chassis supporting the display panel, a driving circuit board disposed on a surface of the chassis opposite to the display panel to generate an electrical signal for driving the display panel, the driving circuit board including at least one heat emissive circuit element, a first heatsink disposed on the heat emissive circuit element and a second heatsink disposed on the chassis. The first heatsink and the second heatsink may be thermally connected by a foldable connecting member.
Abstract: Disclosed is a cathode electrode having a cathode active material layer stacked on a current collector. The cathode active material layer includes a porous conductive material having a surface coated with sulfur and/or a sulfur-containing organic compound and/or pores filled with sulfur and/or a sulfur-containing organic compound. A lithium secondary battery employing the cathode electrode also is disclosed. The cathode electrode is structurally stable during charging and discharging since the structure of the cathode active material layer can be maintained even at the phase transition of sulfur during charging and discharging.
Type:
Grant
Filed:
June 19, 2002
Date of Patent:
April 22, 2008
Assignee:
Samsung SDI Co., Ltd.
Inventors:
Min-seuk Kim, Duck-young Yoo, Jae-young Choi, Jong-ki Lee
Abstract: In a body surface bio-potential sensor, and an apparatus for detecting biomedical signals having the same, the body surface bio-potential sensor includes a flexible membrane having a wire layer, a plurality of electrodes attached on a first surface of the membrane at predetermined intervals, each of the plurality of electrodes having a plurality of needles on a surface thereof, each of the plurality of needles having a predetermined height, and a cohesive layer covering the first surface of the membrane, the cohesive layer exposing regions of the flexible membrane corresponding to positions of the plurality of electrodes.
Abstract: A plasma display device includes a plasma display panel mounted on a first side of a chassis base, a mount on a second side of the chassis base, the mount being electrically connected to the chassis base, a printed circuit board including an electrical grounding section and having an opening in the electrical grounding section, the printed circuit board mounted on the mount by an electrically conductive fastener passing through the opening in the electrical grounding section, and a grounding module positioned in the opening so as to be between the electrical grounding section and the electrically conductive fastener and electrically connecting the electrical grounding section to the mount.
Abstract: A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.
Abstract: An electrostatic discharge protection device, and a method of fabricating the same, includes a substrate, an n-well formed in the substrate, a p-well formed on the n-well, an NMOS transistor formed on the p-well, the NMOS transistor including a gate electrode, an n+ source and an n+ drain, and a grounded p+ well pick-up formed in the p-well, wherein the n-well is connected to the n+ drain of the NMOS transistor and the n+ source is grounded. The n+ drain and the n-well are connected to decrease a voltage of a trigger and a current density of a surface of the substrate.
Abstract: A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be nitrided. The method may include providing a precursor of a transition metal, providing a precursor of a lanthanide group element, and forming a composite oxide on the lower electrode by oxidizing both the precursor of the transition metal and the precursor of the lanthanide group element, the composite oxide containing the transition metal and the lanthanide group element.
Type:
Grant
Filed:
August 22, 2005
Date of Patent:
April 1, 2008
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Jung-hyun Lee, Sung-ho Park, Bum-seok Seo
Abstract: Provided are a wireless data communication apparatus and a method using a multicarrier, and a transmission frame format therefore, wherein through the wireless data communication method, a plurality of stations can transmit and receive burst data to and from a net access group switching center wirelessly using a multicarrier. The method includes: (a) allocating a sub-carrier channel set to one of the plurality of stations that requests allocation of the sub-carrier channel set consisting of sub-carriers of a first predetermined number out of a plurality of sub-carriers at a predetermined point of time; (b) activating the sub-carrier channel set allocated to the station which desires to transmit the data; and (c) checking the activation of the sub-carrier channel set, detecting a station that requests the allocation of resources based on the checked results, and allocating resources of a second predetermined number to the detected station.
Abstract: In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the interlayer insulating layer disposed in parallel with each other, a blocking layer on the interlayer insulating layer between each of the plurality of fuses and in parallel with the plurality of fuses, and a plurality of fuse grooves recessed into the interlayer insulating layer between each of the plurality of fuses and the blocking layer.
Abstract: A flash memory device includes a cell string having a plurality of cell transistors connected in series, and a string selection transistor and a ground selection transistor connected to both ends of the cell string, respectively, wherein the cell transistor has a channel impurity concentration higher than a channel impurity concentration of at least one of the string selection transistor and the ground selection transistor.
Type:
Grant
Filed:
January 31, 2007
Date of Patent:
April 1, 2008
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Jai-Hyuk Song, Jeong-Hyuk Choi, Ok-Cheon Hong
Abstract: A plasma display panel, a chassis coupled to the plasma display panel, a substrate having a hole therethrough and having circuits to drive the plasma display panel, the substrate spaced apart from the chassis, a grounding boss extending from the chassis, the grounding boss having a diameter smaller than the hole and passing through the hole without contacting the substrate, a grounding bracket fixed on the grounding boss, spaced a predetermined distance from the substrate, and electrically connected to the chassis through the grounding boss, and a spacer inserted into the hole, disposed between the grounding boss and the grounding bracket and determining a height of the grounding bracket.
Abstract: An apparatus and method for performing coarse frequency synchronization in an orthogonal frequency division multiplexing (OFDM) receiver includes cyclically shifting a received signal X(k) by a predetermined shift amount d, determining the length of a summation interval according to a phase coherence bandwidth and a number K of sub-bands into which the summation interval is divided, generating and adjusting a symbol time offset according to the number K of sub-bands, generating a weighted phase reference signal Z(k) which is phase-shifted by the symbol time offset and weighted by a weighting vector determined according to a frequency band, partially correlating the shifted signal X(k+d) and the weighted phase reference symbol Z(k) and calculating a partial correlation value for each of the K sub-bands; and determining the shift amount dmax at a maximum sum of the partial correlation values and outputs the shift amount dmax as an estimated coarse frequency offset.
Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
Type:
Grant
Filed:
June 17, 2005
Date of Patent:
March 18, 2008
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Yoon-dong Park, Jo-won Lee, Chung-woo Kim, Eun-hong Lee, Sun-ae Seo, Woo-joo Kim, Hee-soon Chae, Soo-doo Chae, I-hun Song