Patents Represented by Attorney Lee & Morse, P.C.

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  • Semiconductor device having self-aligned gate pattern
    Patent number: 7388249
    Abstract: The present invention provides a semiconductor device in which the gate is self-aligned to the device isolation film and a fabricating method thereof. A device isolation film restricting an active region is disposed on a portion of a semiconductor substrate, and a word line is across over the device isolation film. A gate pattern is disposed between the word line and the active region, and a tunnel oxide film is disposed between the gate pattern and the active region. The gate pattern comprises a floating gate pattern, a gate interlayer dielectric film pattern and a control gate electrode pattern deposited in the respective order, and has a sidewall self-aligned to the device isolation film. To form the gate pattern having the sidewall self-aligned to the device isolation film, a gate insulation film and a gate material film are formed in the respective order on the semiconductor substrate.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: June 17, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Woon-Kyung Lee
  • Method of isolating semiconducting carbon nanotubes
    Patent number: 7387735
    Abstract: A method of isolating semiconducting carbon nanotubes includes mixing carbon nanotubes with a mixed acid solution of nitric acid and sulfuric acid to obtain a dispersion of carbon nanotubes, stirring the carbon nanotube dispersion, and filtering the carbon nanotube dispersion. Functional groups remaining on the filtered carbon nanotubes may then be removed, e.g., via heating.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: June 17, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wan-jun Park, Young-hee Lee, Cheol-min Yang
  • Self-Aligned buried contact pair
    Patent number: 7388243
    Abstract: A self-aligned buried contact (BC) pair includes a substrate having diffusion regions; an oxide layer exposing a pair of diffusion regions formed on the substrate; bit lines formed between adjacent diffusion regions and on the oxide layer, each of the bit lines having bit line sidewall spacers formed on sidewalls thereof; a first interlayer dielectric (ILD) layer formed over the bit lines and the oxide layer; a pair of BC pads formed between adjacent bit lines and within the first ILD layer, each BC pad being aligned with one of the pair of exposed diffusion regions in the substrate; and a pair of capacitors, each of the pair of BC pads having one of the pair of capacitors formed thereon, wherein a pair of the bit line sidewall spacers is adjacent to each of the BC pads and the pair of bit line sidewall spacers has an asymmetrical shape.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: June 17, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Cheol-Ju Yun, Chang-Hyun Cho, Tae-Young Chung
  • Electrostatic latent image forming medium, image forming apparatus including the electrostatic latent image forming medium and method of forming an electrostatic latent image
    Patent number: 7388594
    Abstract: An electrostatic latent image forming medium includes a frame, an imaging surface on which an electrostatic latent image is to be formed, the imaging surface being supported by the frame, and an alteration mechanism for altering the electrostatic latent image on the imaging surface, the alteration mechanism being between the frame and the imaging surface. When signals are selectively applied to the alteration mechanism, an electrostatic latent image with a potential different from a potential of its surrounding area is formed on the imaging surface.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: June 17, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-jin Kim, Seung-joo Shin, Kye-si Kwon, Jang-yeon Kwon, Il-kwon Moon
  • Communication system and method for increasing communication efficiency
    Patent number: 7386277
    Abstract: A mobile communication system capable of increasing communication efficiency and a method therefor are provided, including a receiver for grouping n MCS levels (where n>0) into continuous m MCS levels (where n>m>0) according to the quality of a data channel for transmitting an information signal, and sending information on an MCS group using a pilot signal, and an ACK or an NACK signal, which indicates whether the information signal is completely received; and a transmitter for storing information on the n MCS levels, extracting the m MCS levels according to the information on the MCS group transmitted from the receiver, determining one of the extracted m MCS levels as an initial MCS level, modulating and coding information data to be transmitted according to the initial MCS level and transmitting the result to the receiver, and changing the current MCS level in response to the ACK or the NACK signal.
    Type: Grant
    Filed: September 3, 2002
    Date of Patent: June 10, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myeon-gyun Cho, Ho-jin Kim
  • Micro fluxgate sensor and method of manufacturing the same
    Patent number: 7382123
    Abstract: A micro-machining method of manufacturing a micro fluxgate sensor manufactured having an amorphous magnetic core includes forming lower coils of an excitation coil and a magnetic field detecting coil on a wafer, depositing a first insulating layer on the lower coils and forming an amorphous magnetic core, depositing a second insulating layer on the amorphous magnetic core and forming upper coils connected to the lower coils to complete the excitation coil and the magnetic field detecting coil, and covering the excitation coil and the magnetic field detecting coil with a protective film, and etching the protective film to expose a portion of the excitation coil and magnetic field detecting coil, thereby forming a pad.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: June 3, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-won Na, Sang-on Choi, Hae-seok Park, Dong-sik Shim
  • Method and apparatus for duplex communication in hybrid fiber-radio systems
    Patent number: 7379669
    Abstract: An apparatus and method for enabling cost-effective duplex communication by diplexing one of down stream signals for frequency up-conversion in a hybrid fiber-radio system includes diplexing an unmodulated mode signal among beating signals between a master laser and an injection-locked slave laser and using the diplexed signal for down-conversion in upstream transmission, thereby eliminating the need for expensive high-frequency local oscillators for frequency conversion. Higher radio frequency signals can be generated using beating between basic modes and satellite modes such as FWM conjugates of the master laser and slave laser. Cost-effective systems, stabilization of a light source and improved transmission performance may be achieved by using a diplexer instead of an expensive high-frequency local oscillator.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: May 27, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: A-jung Kim
  • Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
    Patent number: 7378716
    Abstract: A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.
    Type: Grant
    Filed: November 15, 2004
    Date of Patent: May 27, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Sang-jin Park, In-jun Hwang
  • Method of fabricating memory device utilizing carbon nanotubes
    Patent number: 7378328
    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: May 27, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
  • Method for recognizing a pattern of an alignment mark on a wafer
    Patent number: 7379581
    Abstract: A method for recognizing a pattern of an alignment mark on a wafer includes positioning the wafer on an adjustable wafer stage in an alignment apparatus; capturing images of a key alignment mark by magnifying an alignment mark region of the wafer; deleting image data from a region where the alignment pattern does not exist between the captured images; and extracting an alignment mark pattern by a pattern recognition of the remaining image data after the deletion of the image data. Thus, an alignment failure can be reduced because a particle on the wafer is not mistaken as an alignment mark.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: May 27, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jong-Sun Peak
  • Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
    Patent number: 7374994
    Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: May 20, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
  • SONOS memory device having side gate stacks and method of manufacturing the same
    Patent number: 7374991
    Abstract: In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.
    Type: Grant
    Filed: August 10, 2005
    Date of Patent: May 20, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-il Ryu, Jo-won Lee, Se-wook Yoon, Chung-woo Kim
  • Method of fabricating field effect transistor (FET) having wire channels
    Patent number: 7374986
    Abstract: In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: May 20, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sungmin Kim, Ming Li, Eungjung Yoon
  • Integrated optical transceiver and related methods
    Patent number: 7375315
    Abstract: An optical transceiver includes at least one light source and at least one detector mounted on the same surface of the same substrate. The detector is to receive light from other than a light source on the surface. At least one of the light source and the detector is mounted on the surface. An optics block having optical elements for each light source and detectors is attached via a vertical spacer to the substrate. Electrical interconnections for the light source and the detector are accessible from the same surface of the substrate with the optics block attached thereto. One of the light source and the detector may be monolithically integrated into the substrate.
    Type: Grant
    Filed: May 12, 2005
    Date of Patent: May 20, 2008
    Assignee: Tessera North America, Inc.
    Inventors: Michael R. Feldman, James E. Morris
  • Printed circuit board integrated with a two-axis fluxgate sensor and method for manufacturing the same
    Patent number: 7372261
    Abstract: A printed circuit board integrated with a two-axis fluxgate sensor includes a first soft magnetic core formed lengthwise in a first axial direction, a first excitation coil formed of a metal film and wound around the first soft magnetic core, a first pick-up coil formed of a metal film and wound around the first soft magnetic core and the first excitation coil, a second soft magnetic core formed lengthwise in a second axial direction, the second axial direction being perpendicular to the first axial direction, a second excitation coil formed of a metal film and wound around the second soft magnetic core, a second pick-up coil formed of a metal film and wound around the second soft magnetic core and the second excitation coil, and a pad for establishing conductivity between the first and second excitation coils and the first and second pick-up coils and an external circuit.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: May 13, 2008
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Won-youl Choi, Sang-on Choi, Jun-sik Hwang, Myung-sam Kang
  • Method for manufacturing ink-jet printhead
    Patent number: 7368063
    Abstract: In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink formed on a front surface of the substrate, a manifold for supplying ink to the ink chamber formed on a rear surface of the substrate, and an ink passage in flow communication with the ink chamber and the manifold formed parallel to the front surface of the substrate; a nozzle plate including a plurality of passivation layers formed of an insulating material on the front surface of the substrate, a heat dissipating layer formed of a metallic material, and a nozzle in flow communication with the ink chamber; and a heater and a conductor, the heater being positioned on the ink chamber and heating ink in the ink chamber, and the conductor for applying a current to the heater.
    Type: Grant
    Filed: March 6, 2006
    Date of Patent: May 6, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-soo Kim, Su-ho Shin, Yong-soo Oh, Hyung-taek Lim, Jong-woo Shin, Seog-soon Baek
  • Decorative artificial marble panel
    Patent number: D569999
    Type: Grant
    Filed: April 30, 2007
    Date of Patent: May 27, 2008
    Assignee: Cheil Industries, Inc.
    Inventors: Eung Seo Park, Jae Wook Juen, Sung Mook Choi, Myung Hwa Park, Sung Woo Cho, Chang Ho Son
  • Decorative artificial marble panel
    Patent number: D570000
    Type: Grant
    Filed: April 30, 2007
    Date of Patent: May 27, 2008
    Assignee: Cheil Industries, Inc.
    Inventors: Eung Seo Park, Jae Wook Juen, Sung Mook Choi, Myung Hwa Park, Sung Woo Cho, Chang Ho Son
  • Decorative artificial marble panel
    Patent number: D570001
    Type: Grant
    Filed: April 30, 2007
    Date of Patent: May 27, 2008
    Assignee: Cheil Industries, Inc.
    Inventors: Eung Seo Park, Jae Wook Juen, Sung Mook Choi, Myung Hwa Park, Sung Woo Cho, Chang Ho Son
  • Decorative artificial marble panel
    Patent number: D571935
    Type: Grant
    Filed: April 30, 2007
    Date of Patent: June 24, 2008
    Assignee: Cheil Industries, Inc.
    Inventors: Eung Seo Park, Jae Wook Juen, Sung Mook Choi, Myung Hwa Park, Sung Woo Cho, Chang Ho Son