Abstract: A chassis base assembly including a chassis base, a driving circuit unit located at a rear side of the chassis base, the driving circuit unit including a circuit element protruding from the driving circuit unit toward the chassis base, and a heat sink attached to the circuit element, and a flat panel display device having the same.

Abstract: In a piezoelectric ink-jet printhead, and a method of manufacturing a nozzle plate, the piezoelectric ink-jet printhead includes a flow path plate having an ink flow path including pressure chambers to be filled with ink to be ejected, a piezoelectric actuator formed on an upper surface of the flow path plate and for supplying a driving force for ink ejection to the pressure chambers, and a nozzle plate bonded to a lower surface of the flow path plate including nozzles for ejecting ink from the pressure chambers bored through the nozzle plate. The printhead may further include a heater formed on a lower surface of the nozzle plate for heating ink in the ink flow path and/or a temperature detector formed on a lower surface of the nozzle plate or on an upper surface of the flow path plate.

Abstract: A printing apparatus comprising an outer case having a cylindrical inner surface, an inner case inside the outer case and having a cylindrical outer surface facing and spaced by a predetermined distance from the cylindrical inner surface of the outer case; a paper path formed between the inner surface of the outer case and the outer surface of the inner case; a paper feed unit feeding a sheet of paper along the paper path; a printing unit rotatably mounted inside and about a central axis of the inner case; and a rotating unit rotating the printing unit. The length and width of the printing apparatus is less than the length and width of the sheet of paper, thereby providing true compactness and portability without sacrificing print quality. Continuous rotating printing unit provides significant increase in print speed without sacrificing print quality.

Abstract: A plasma display panel (PDP) including a first substrate, a second substrate, a plurality of discharge cells arranged between the first substrate, a plurality of electrodes, and a plurality of phosphor portions, the second substrate arranged to at least partially overlap with the first substrate, the plurality of phosphor portions including a first group of the plurality of phosphor portions arranged on the first substrate, and a second group of phosphor portions arranged on the second substrate.

Abstract: An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being processed, thereby compensating for a plasma density that is typically more concentrated at the center of the semiconductor wafer. By mounting a target semiconductor wafer in a chamber region that has a cross-sectional area that is smaller than a cross-sectional area of a plasma source chamber region, a predetermine flow of generated plasma from the source becomes concentrated as it moves toward the semiconductor wafer, particularly at the periphery of the semiconductor wafer. This provides a more uniform plasma density across the entire surface of the target semiconductor wafer than has heretofore been available.

Abstract: A wafer transfer system, and method of controlling pressure in the system, includes a loadport for receiving a wafer container, a housing operably connected to the loadport, a wafer transfer mechanism for transferring a wafer between the wafer container and the housing, a wafer container sensor for detecting a presence of the wafer container on the loadport, a variable speed fan disposed in a first portion of the housing, a variable exhaust unit disposed in a second portion of the housing facing the first portion, the variable exhaust unit being capable of varying an exhaust rate of air from the housing, and a controller for variably operating the variable speed fan and the variable exhaust unit in response to a signal from the wafer container sensor.

Abstract: A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.

Abstract: Provided are a silicon/oxide/nitride/oxide/silicon (SONOS) memory, a fabricating method thereof, and a memory programming method. The SONOS memory includes a substrate; a first insulating layer stacked on the substrate; a semiconductor layer, which is patterned on the first insulating layer in a predetermined shape, including source and drain electrodes separated by a predetermined interval; a second insulating layer located on the semiconductor layer between the source and drain electrodes; a memory layer, which is deposited on sides of a portion of the semiconductor layer between the source and drain electrodes and on sides and an upper surface of the second insulating layer, including electron transferring channels and an electron storing layer; and a gate electrode, which is deposited on a surface of the memory layer, for controlling transfer of electrons in the memory layer. The programming method may provide a large capacity, stable, multi-level memory.

Abstract: A multiband RF transmitting and receiving apparatus and a method therefore is capable of using a control voltage from a phase locked loop (PLL) to control other components, as well as a voltage controlled oscillator (VCO), of a multiband RF transceiver. The multiband transmitting and receiving apparatus adjusts a capacitance value of a varactor in a power amplifier (PA) and a low noise amplifier (LNA) including an LC parallel resonance circuit, respectively, using the control voltage from the PLL and controls a current flowing to a mixer. Accordingly, the components in the multiband RF transceiver are able to operate a greater number of frequency bands than a single frequency band, thereby reducing the number of components required to design the multiband RF transceiver.

Abstract: A method of forming a recessed gate may include forming a gate recess including an upper recess and a lower recess at an upper portion of a semiconductor substrate, the lower recess may have a width substantially wider than that of the upper recess, forming a gate insulation layer on an inner surface of the gate recess, forming a first silicon layer on the semiconductor substrate including the gate insulation layer to form an open void within the gate recess, forming a stop layer having a high thermal resistance on the first silicon layer to prevent a void from moving around within the gate recess, forming a second silicon layer on the first silicon layer, and patterning the second and the first silicon layers to form a gate electrode.

Abstract: A method for transmitting data in a centralized data communications system having an access point and a plurality of stations using a carrier sense multiplexing access (CSMA) method using a backoff number control preferably includes (a) receiving a multi-poll message containing backoff numbers to be assigned to each station by the access point; (b) setting the backoff numbers of the multi-poll message to the backoff numbers of the stations; and (c) counting down the set backoff numbers and transmitting data. Each station that desires polling registers a station ID and a polling cycle, sets a backoff number contained in a multi-poll message, counts the backoff number, and if the backoff number becomes zero, transmits data such that contention between stations is prevented.

Abstract: A flat display device may include a plurality of electrodes arranged in one direction, a first transistor coupled between the plurality of electrodes and a first power source for supplying a first voltage, and a gate driving circuit for supplying a driving voltage to a gate of the first transistor through a push-pull circuit including second and third transistors coupled between second and third power sources for respectively supplying second and third power sources, wherein a resistance formed between the second transistor and the second power source is greater than that formed between the third transistor and the third power source.

Abstract: A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.

Abstract: A sub-wavelength anti-reflective diffractive structure is incorporated with a base diffractive structure having a small period to form a high efficiency diffractive structure. In the high efficiency diffractive structure, the anti-reflective structure and/or the base diffractive structure are altered from their ideal solo structure to provide both the desired performance and minimize reflections.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate having a source region and a drain region, and a gate stack formed on the semiconductor substrate between and in contact with the source and drain regions. The gate stack includes, in sequential order from the substrate: a tunneling film; a first trapping material film doped with a first predetermined impurity, the first trapping material film having a higher dielectric constant than the nitride film (Si3N4); a first insulating film having a higher dielectric constant than a nitride film; and a gate electrode. Such a nonvolatile semiconductor memory device can effectively control the trap density according to the doping concentration, thereby increasing the write/erase speed of data at a low operating voltage.

Abstract: A fuel supply device for direct methanol fuel cells includes a fuel tank for storing liquid fuel, a wick structure formed on the fuel tank, the wick structure for receiving the liquid fuel from the fuel tank, a sheet stack disposed on the wick structure, the sheet stack for absorbing and transferring, in an upward direction, the liquid fuel supplied to the wick structure, and an electrode plate disposed on the sheet stack for supplying, in an upward direction, the liquid fuel absorbed into the sheet stack. The fuel supply device may continuously and uniformly supply a proper amount of liquid fuel and effectively remove by-products generated in a fuel cell. Thus, a long life, efficient fuel cell may be created with the fuel supply device.

Abstract: An image forming apparatus includes an electrostatic latent image forming medium, a charge unit charging the surface of the electrostatic latent image forming medium with a predetermined potential, a toner supply unit (TSU) supplying toner to an electrostatic latent image formed on the surface of the electrostatic latent image forming medium to develop the electrostatic latent image into a toner image, and a transfer unit transferring the toner image to a print medium, the electrostatic latent image forming medium including a transparent frame member, a light source inside the frame member, an optical shutter array including a plurality of optical shutters, and a photoconductive layer on which the electrostatic latent image is formed using light transmitted through the optical shutter array. A diffuser may surround the light source to diffuse light to maintain the intensity of light reaching the optical shutters at a uniform level.

Abstract: A heat radiating assembly employable by a plasma display apparatus for radiating heat generated by a signal transmission unit, which transmits electric signals from a circuit unit that drives a plasma display panel and includes an electronic device covered by a protecting member, is provided. The heat radiating assembly may include a heat absorbing member, a heat radiating member, and a heat transferring member. The heat absorbing member may absorb the heat generated by the electronic device and transmitted to the protecting member. The heat radiating member may radiate heat out from the plasma display apparatus. The heat transferring member may transfer the heat from the heat absorbing member to the heat radiating member.

Abstract: An inductor used in an RF unit for a wireless communication terminal, includes first inductor means for electrically connecting an RF chip placed over a substrate at a predetermined distance from the substrate that are enclosed by an interlayer dielectric layer and second inductor means for connecting the RF chip to the first inductor means.

Abstract: A method for generating packet-based transmission control parameters includes (a) receiving class information of an audio-video (AV) application and characteristic information of an AV packet, from the AV application, (b) receiving status information of a wireless channel and buffer storage time information of the AV packet, from a medium access control (MAC) layer, and (c) generating and outputting the packet-based transmission control parameters on the basis of the received information. In addition, a selective retransmission method includes (a) transmitting packets of an MPEG-2 frame in real-time, (b) checking for any transmission error after the transmission, and (c) if any transmission error is generated, retransmitting only packets of an I-frame. Therefore, it is possible to efficiently support AV service in wireless communication by dynamically controlling transmission control parameters according to a buffer status and by reflecting the characteristics of the AV frames.