Patents Represented by Attorney Mark C. Pickering
  • Patent number: 7307021
    Abstract: A layer of required material, such as polysilicon, is planarized by first forming a sacrificial layer of material, such as an oxide, on the layer of required material. The combined layers of required and sacrificial materials are then planarized using chemical-mechanical polishing until the sacrificial material has been substantially, completely removed.
    Type: Grant
    Filed: October 2, 2000
    Date of Patent: December 11, 2007
    Assignee: National Semiconductor Corporation
    Inventor: David W. Carlson
  • Patent number: 7305575
    Abstract: A communication system includes an interface that allows a media access controller (MAC) and an optical line termination transceiver module (TM), which have incompatible interfaces, to be connected together. The interface detects a phase relationship required by the TM, and feeds the information back to a processor and memory which places a value into the MAC to adjust the phase relationship.
    Type: Grant
    Filed: February 4, 2005
    Date of Patent: December 4, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventors: Jerry Darden Vereen, Thomas Jay Kitchens, Jose G. Betancourt
  • Patent number: 7301212
    Abstract: The sensitivity of a MEMS microphone is substantially increased by using a portion of the package that holds the MEMS microphone as the diaphragm or a part of the diaphragm. As a result, the diaphragm of the present invention is substantially larger, and thus more sensitive, than the diaphragm in a comparably-sized MEMS microphone die.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: November 27, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Michael Mian, Robert Drury, Peter J. Hopper
  • Patent number: 7298159
    Abstract: The trench leakage current of a deep trench isolation structure is measured. The deep trench isolation structure, which is filled with polysilicon, contacts both a first region of a first conductivity type and a second region of a second conductivity type, and is proximate to a third region of the first conductivity type formed in the second region. Test voltages are applied to the structures and the leakage current is measured.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: November 20, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Lisa V. Rozario, Andy Strachan
  • Patent number: 7287175
    Abstract: An optical network terminal includes a sleep logic circuit that assumes responsibility for monitoring off-hook transitions after the AC main power supply has failed for a predetermined period of time. The sleep logic circuit is very low power and, as a result, allows the optical network terminal to remain active and provide lifeline support for a much greater period of time.
    Type: Grant
    Filed: July 19, 2004
    Date of Patent: October 23, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventors: Jerry Darden Vereen, Ronald Howard Diego, Barry Alan Farber
  • Patent number: 7274881
    Abstract: The memory of the optical line terminal (OLT) of a broadband passive optical network (BPON) is increased to store, in addition to an active identity number, such as the serial number, of the current optical network terminal (ONT) connected to a network end point, a standby identity number, such as the serial number, of a replacement optical network terminal (ONT) when upgrades are requested by the end users, or partial or total failures are reported by the end users.
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: September 25, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventor: Shimon Hochbaum
  • Patent number: 7274712
    Abstract: A router stores a value that indicates the maximum number of channels that can be output to a group, and the number of channels that are output to the group. When a member of the group indicates a channel change selection from a first channel to a second channel, the router drops the first channel before outputting the second channel when the maximum number of channels and the number of channels are equal.
    Type: Grant
    Filed: April 29, 2003
    Date of Patent: September 25, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventors: Allen Tsz-Chiu Wong, Zhidan Cheng
  • Patent number: 7271029
    Abstract: A package-ready light-sensitive integrated circuit and process for preparing a light-sensitive semiconductor substrate for packaging that provide for a reduced exposure of a light-sensitive integrated circuit to light. The package-ready light-sensitive integrated circuit includes a semiconductor substrate (e.g., a silicon wafer) with an upper surface and a lower surface and lateral edges, an individual light-sensitive integrated circuit formed in and on the upper surface of the semiconductor substrate, and an opaque material layer covering the lower surface and lateral edges of the semiconductor substrate. The opaque material layer prevents light from entering the semiconductor substrate and interfering with operation of the light-sensitive integrated circuit. The process includes first providing at least one semiconductor substrate with a plurality of light-sensitive integrated circuits formed in and on its upper surface.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: September 18, 2007
    Assignee: National Semiconductor Corporation
    Inventor: Ching K. Tai
  • Patent number: 7271606
    Abstract: The voltage at a node of an integrated circuit can be measured or controlled using a two-wire kelvin contact with spring-based probe pins by offsetting and tapering the lower end section of the spring-based probe pin. As a result, multiple spring-based probe pins can be connected to a single contact bump, such as a solder bump.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: September 18, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Tze Kang Tang, Sek Hoi Chong, Chin Chai Gan, Hai Ching Tan
  • Patent number: 7265599
    Abstract: A edge triggered flipflop tolerates arbitrarily slow clock edge rates by utilizing complex gates, with weighted transistors, to electrically isolate the master latch from the data inputs, before the master latch and the slave latch are electrically connected together, and to electrically isolate the master latch from the slave latch, before the master latch and the data inputs are electrically connected together.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: September 4, 2007
    Assignee: National Semiconductor Corporation
    Inventor: Ronald Pasqualini
  • Patent number: 7259411
    Abstract: A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. The vertical MOS transistor also has an insulation layer that lines the trench, and a conductive gate region that contacts the insulation layer to fill up the trench.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: August 21, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Yuri Mirgorodski, Vladislav Vashchenko, Peter Johnson
  • Patent number: 7260808
    Abstract: Pseudo area values, which represent standard cell power dissipation, are substituted for physical standard cell areas in a standard cell library. As a result, when a logic synthesizer synthesizes a gate level netlist from hardware description language (HDL) code, the synthesized netlist will describe a logic block that has minimal power dissipation.
    Type: Grant
    Filed: December 11, 2004
    Date of Patent: August 21, 2007
    Assignee: National Semiconductor Corporation
    Inventor: Ronald Pasqualini
  • Patent number: 7250842
    Abstract: A very, very low resistance micro-electromechanical system (MEMS) inductor, which provides resistance in the single-digit milliohm range, is formed by utilizing a single thick wide loop of metal formed around a magnetic core structure. The magnetic core structure, in turn, can utilize a laminated Ni—Fe structure that has an easy axis and a hard axis.
    Type: Grant
    Filed: August 9, 2005
    Date of Patent: July 31, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Peter Johnson, Peter J. Hopper, Kyuwoon Hwang, Robert Drury
  • Patent number: 7250807
    Abstract: The leakage current output by a MOS transistor is minimized by varying a back bias voltage across a range of voltages, and detecting the back bias voltage within the range that minimizes the leakage current output by the MOS transistor. The detected back bias voltage is then applied to the MOS transistor.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: July 31, 2007
    Assignee: National Semiconductor Corporation
    Inventor: James Thomas Doyle
  • Patent number: 7250841
    Abstract: A micro-electromechanical system (MEMS) inductor is formed in a saucer shape that completely surrounds a magnetic core structure which is formed from a ferromagnetic material. In addition, an array of MEMS inductors can be formed by dividing up the saucer-shaped MEMS inductor into a number of electrically-isolated MEMS inductor wedges.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: July 31, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Philipp Lindorfer
  • Patent number: 7238553
    Abstract: When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: July 3, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Vashchenko, Andy Strachan, Peter J. Hopper, Philipp Lindorfer
  • Patent number: 7240142
    Abstract: The bus circuit of a master electronics card in a backplane-based communications system adaptively grants the upstream bus to the slave electronics cards by the early termination of a scheduled number of grants to a slave electronics card when the bus circuit on the master electronics card detects idle cells.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: July 3, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventors: Paul Brian Ripy, Shuo Huang, Amar Mohammed Othman, Christophe Pierre Leroy
  • Patent number: 7230301
    Abstract: A resistor, a transistor, and a capacitor can be fabricated on a semiconductor wafer in a process that forms an isolated single-crystal region with precise dimensions. The isolated single-crystal region, in turn, defines the body of the resistor, the gate of the transistor, and the top plate of the capacitor.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: June 12, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Gobi R. Padmanabhan, Visvamohan Yegnashankaran
  • Patent number: 7228459
    Abstract: A primary server and a backup server that both run a RADIUS client in a cold start configuration share a single IP address that includes a limited number of message identifiers (MIDs). The primary server and the backup server each have a small number of fixed message identifiers. In addition, a large number of shared message identifiers are used by the primary server, and then used by the backup server a predetermined time after the primary server fails.
    Type: Grant
    Filed: May 19, 2003
    Date of Patent: June 5, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventors: Tsang Ming Jiang, Jhaanaki Krishnan, Weifang Yang
  • Patent number: 7222660
    Abstract: A cabinet which utilizes an air-to-air heat exchanger to remove heat generated from within the cabinet prevents water and dust from entering the air-to-air heat exchanger by forcing cooler external air up along a first side wall, through the air-to-air heat exchanger, and down along a second side wall.
    Type: Grant
    Filed: October 4, 2004
    Date of Patent: May 29, 2007
    Assignee: Tellabs Petaluma, Inc.
    Inventors: Lawrence M. Giacoma, David Michael Austin, Daniel J. Calanni