Abstract: A paper cassette holds a stack of print medium therein. A guide member includes first and second members. A medium-supporting plate supports the stack of the paper placed thereon. When the guide member is moved to a predetermined position, the first member abuts the end of the stack of print medium and the second member slides under the edges of the paper placed on the medium-supporting plate. The second member has a tapered forward end portion that allows the second member to smoothly slide under the bottom of the stack of print medium. The guide member is guided in a groove to move to and from the stack of print medium. The second member has a flat portion and the tapered forward end portion extends further away from the flat portion than the bottom of the stack of print medium.
Abstract: Shoulder rest for use with violin is disclosed. The rest includes a base including two half portions each including a central channel, a guide rail along either side of the base, a rack rail at either side of the channel, and two half sections each comprising clamping means; a support including a leg inserted into the channel, two latched members slidably fastened at underside of the channel, and two toothed stops engaged with the rack rail; and pivotal means comprising a body having a top hole for receiving a threaded stem of the clamping means, a parallel snapping element, and a bar interconnected the body and the snapping element, the bar being pivotal about a cavity of the support having a bifurcation sandwiched by the body and the snapping element. Two side flanges of the support are mounted to the guide rails. Thus, the support is moveable along the channel.
Abstract: A NAND type dual bit nitride read only memory and a method for fabricating thereof are provided. Firstly, a plurality of isolation layers, which are spaced and parallel to each other are formed in the substrate. Next, a plurality of word lines and a plurality of oxide-nitride-oxide (ONO) stack structures are formed on the substrate. The word lines are spaced and parallel to each other, and also the word lines are perpendicular to the isolation layers. Each of the ONO stack structure is located between the corresponding word line and the substrate. And then a plurality of discontinuous bit lines, which are located between the word lines and between the isolation layers are formed on the substrate. The structure of the present invention of the NAND type dual bit nitride read only memory is similar to that of a complementary metal-oxide semiconductor (CMOS), and their fabrication processes are fully compatible.
Abstract: A power tool transmission device includes a base, a switch portion, a vibration member, a press portion, a transmission shaft and a casing. When the projections press the position plates, bosses on the position plates engage ribs formed outside the outer ring so as to limit the rotation of the outer ring and when the first gear and the second gear are intermittently disengaged with each other, a vibration effect is provided to the transmission shaft.
Abstract: There is provided a worm speed change apparatus comprising a worm shaft and a worm wheel meshed therewith. Rolling elements are rotatably disposed between a raceway groove formed directly in at least one of end portions of the worm shaft, and a bearing outer ring held by a housing. The worm shaft is directly supported by the rolling elements.
Abstract: A heart rate transmitter comprising a strap and a body. The strap is in long belt shape, a hole is in the center of the strap, a conducting rubber plate each is on both ends of the hole, a contacting tip stretches out from the conducting rubber plate to the inner side of the hole. The body is installed inside the hole of the strap; two contacting points are on both ends of the body. When the body is inserted into the hole of the strap, two contacting points are pressed to contact the contacting tips of the conducting rubber plate inside the hole of the strap; the conducting rubber plate contacts human body to measure the heartbeat rate.
Abstract: A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.
Abstract: A manufacturing method for an SOI semiconductor device includes creating transistors and an element isolation region on a semiconductor layer in an SOI substrate. The method also includes covering the transistors and the element isolation region with a first insulation film. The method also includes creating a first opening section which penetrates the first insulation film, element isolation region and a buried oxide film to expose the support substrate. The method also includes creating a first source interconnect, first drain interconnect and first gate interconnect which are electrically connected to the transistors, on the second insulation film. The method also includes forming dummy interconnects which are connected with these interconnects, and are electrically connected with the support substrate via the first opening section, on the second insulation film.
Abstract: An echo canceler having a predictive filter that generates an echo replica signal and an adder that subtracts the echo replica signal from a send input signal also has a receive input amplifier and a clipping circuit. The clipping circuit clips the input to the predictive filter at a threshold level determined by increasing the receive input amplifier gain until distortion of the echo component causes echo cancellation performance to degrade. Alternatively, the echo canceler may have a send input amplifier, a send output amplifier, and an echo replica amplifier that amplifies the predicted echo replica signal. The gain of the send input amplifier is increased to determine the gain at which echo cancellation performance begins to deteriorate due to echo amplification, and the gain of the echo replica amplifier is set to compensate for the echo amplification.
Abstract: A multi-domain vertical alignment (MVA) liquid crystal display (LCD), including a first substrate and a second substrate, a common electrode, a number of pixel electrodes, a number of first switches and second switches, and liquid crystals (LCs). The common electrode is formed on one surface of the first substrate. The pixel electrodes are formed on a surface of the second substrate and are opposite to the common electrode. Each of the pixel electrodes includes a slit and a first sub-pixel electrode and a second sub-pixel electrode which are electrically isolated to each other by the slit. Each of the first switches is used for controlling corresponding first sub-pixel electrode, and each of the second switches is used for controlling corresponding second sub-pixel electrode. The liquid crystals (LCs) are sealed between the first substrate and the second substrate.
Abstract: A shifting mechanism for electric vehicles includes an operation bar coupled with a universal joint mounting on an electric vehicle body. The operation bar may be turned and swiveled in multiple directions and has a free end movable according to preset paths of a guiding means. The operation bar may be swiveled in different directions or through the guiding means to switch circuits that control motor positive rotation and reverse rotation at high speed or low speed. Thereby a definite direction is provided to switch the direction and speed. The switches are located on different positions and arranged in low—high speed and forward (positive rotation)—backward (reverse rotation) fashion so that the backward movement can only be exercised at the low speed to avoid the risk of backward high speed condition to secure safety for children's ride-on electric vehicles.
Abstract: A processor includes a memory unit in which instructions having their constituent bytes stored in ascending address order alternate with instructions having their constituent bytes stored in descending address order. A single address pointer is used to read one instruction by reading up, and another instruction by reading down. The amount of address information needed for program execution is thereby reduced, as one address pointer suffices for two instructions. The address pointer may be provided by a branch instruction that also indicates whether to read up or down. An up-counter and a down-counter may be provided as address counters, enabling the two instructions to be read and executed concurrently. Four address counters may be provided, enabling a branch instruction to designate the execution of from one to four consecutive instructions.
Abstract: In a method of manufacturing a semiconductor device, a flexible tube connects at least part of a path extending from a reaction chamber to a detoxification device through a vacuum pump. The flexible tube has a tube body made of hard material, the tube body having projected parts and depressed parts and a cover provided over an outer surface of the tube body, the cover being made of elastic material, the cover being in contact with around the projected parts of the tube body and formed over the depressed parts of the tube body so that a vacant space is formed between the tube body and the cover. Then, a semiconductor substrate is disposed within the reaction chamber. The vacuum pump is activated to bring the reaction chamber into a pressure-reduced state. A reaction gas is supplied to the reaction chamber. Finally, the reaction gas causes to react to thereby deposit a reactant on the semiconductor substrate.
Abstract: A communication channel selecting circuit which can select and use a channel that does not disturb or interfere with another radio apparatus, avoiding a channel occupied by other similar radio apparatus nearby, is provided. The communication channel selecting circuit selects a communication channel in accordance with radio signal intensity, the selecting circuit transmitting and receiving radio signals in a plurality of channels. A radio unit outputs a signal indicating radio signal intensity of a radio signal received through an antenna in a receiving status and transmitting a radio signal to the antenna in a transmission status. A control circuit sets the radio unit to the receiving status even at a transmission timing.
Abstract: Upon a drop in engine rotation speed, a direct current voltage which periodically changes is applied to coils of pole magnets 18u-18w, thereby causing an increase or reduction in the rotation speed of the second flywheel 21. When the rotation speed of a first flywheel 11 matches the rotation speed of the second flywheel 21, a current is applied to a coil 24 to displace the second flywheel 21 to the first flywheel 11 side such that the second flywheel 21 is connected to the first flywheel 11 via dog clutches 26. Thereby, the shock which is produced upon connection of a second flywheel is reduced, and slippage occurring during connection of a second flywheel is also reduced.
Abstract: An internal connector including a carrying portion, a connecting portion, an elastic component and a second positioning component is disclosed. The internal connector is installed in an electronic apparatus with an insert card device. The connecting portion having a first positioning component is equipped on the carrying portion. And the first positioning component includes an initial structure and a stopper. The connecting portion is used to be connected with the insert card device and to slide between a first position and a second position. The elastic component moves the connecting portion to the first position or the second position. The second positioning component is movably disposed at one terminal of the carrying portion.
Abstract: To reduce the disturbance between adjacent memory cells, an improved ONO flash memory array is implanted with a pocket on one side of the channel of each memory cell or two pockets of different concentrations on both sides of the channel, thereby resulting in memory cells with asymmetric pockets. Consequently, no disturbances occurred between adjacent memory cells when the ONO flash memory array is programmed or erased by band-to-band techniques, and the disturbances between adjacent memory cells are also suppressed during reading process.
Type:
Grant
Filed:
August 20, 2003
Date of Patent:
July 12, 2005
Assignee:
Macronix International Co., Ltd.
Inventors:
Mu-Yi Liu, Chih-Chieh Yeh, Tso-Hung Fan, Tao-Cheng Lu
Abstract: The single-step debug card using the PCI interface according to the present invention utilizes a bus master to send out an REQ# signal to request issuing a control during the PCI bus cycle to be inspected. The address, data, command, and byte enable (BE#) of the bus cycle are locked and displayed through LEDs for single-step debugging. Through a switch circuit, a TRDY# ready signal is sent out. A device selection signal (DEVSEL#) is raised to HIGH at the same time the TRDY# ready signal finishes so as to notify the bus master on the single-step interruption debug card to end the cycle for single-step debugging.