Abstract: A reference voltage providing circuit. The operation amplifier includes a non-reverse input terminal, a reverse input terminal and an output terminal coupled to the reverse input terminal for outputting an output voltage. The reference voltage generator is coupled to the non-reverse input terminal. The loading is coupled to the output terminal. The current source provides a starting current. The switching device is coupled between the current source and the output terminal, and turned on by an accelerating charging signal to pass the starting current to the loading through the first output terminal. The pulse output device outputs the accelerating charging signal.

Abstract: A dual-frequency planar antenna disclosed herein utilizes a main radiating device to produce a resonance mode and excites a parasitic radiating device to produce another resonance mode by the coupling of energy. These two modes can provide sufficiently broad bandwidths, and the present invention is simple in design, which makes it cost effective. Therefore, the planar antenna of the present invention is a competitive alternative for wireless communication applications.

Abstract: In a method of manufacturing a capacitor, a semiconductor substrate is provided. On the semiconductor substrate, a transistor is formed. Then, a first conductive layer is formed on the substrate. An insulating layer is formed on the first conductive layer. A second conductive layer is formed on the insulating layer. The second conductive layer is patterned to form an upper electrode. Finally, the first conductive layer is patterned to form a lower electrode and a conductive pattern after the formation of the upper electrode.

Abstract: A trim circuit and method for tuning a current level of a reference cell in a flash memory that includes a sense amplifier to compare a cell current from a memory cell whose gate receives a word line signal voltage with a reference current from the reference cell whose gate receives a bias voltage produced by dividing the word line signal voltage by a voltage divider to thereby produce a sense signal. The voltage divider includes at least a programmable flash cell to serve as a variable resistor whose resistance is determined by programming the programmable flash cell by a programming/erasing circuit in reference to the programming of the memory cell.

Abstract: A multi-battery automatic charging circuit with individual regulator is further provided with one secondary or more than one output interface to convert an AC source via a rectifier into a DC charging source, thus to supply power to an external rechargeable device or a DC load of different voltage through a tap of the circuit specific voltage; or alternatively, a primary battery, or a rechargeable battery provided with storage capacity, or any other rechargeable device generally available in the market is placed in the battery holder provided otherwise for the placement of rechargeable batteries to charge the external rechargeable device or to supply power to a DC load.

Abstract: A cutting device for breaking fragile materials is constructed to include a lifting mechanism adapted to move the cutter vertically, a rotary table adapted to control the cutting angle of the cutter on the workpiece, a feed mechanism adapted to control the federate of the cutter, and a rotary mechanism adapted to rotate the cutter for enabling the cutter to cut the workpiece with one of multiple cutting points thereof selectively.

Abstract: It is to provide an image forming apparatus capable of reducing a processing time and of forming an image without high-temperature offset and defect of fixing when images are continuously formed. The image forming apparatus has number of sheets storing means for storing the number of passing sheets upon previous continuous-image-formation; counter means for counting a passing time from the end time of the continuous image formation; and a CPU for, when the images are continuously formed at this time, limiting the number of sheets image-formed at a first copying speed at which the number of sheets is large per unit time to a predetermined number of sheets, based on the number of recorded sheets and the passing time upon the previous continuous-image-formation and for, when the number of sheets is over the limited number of sheets, changing the first copying speed to the second copying speed at which the number of sheets per unit time is small.

Abstract: A copy-limit pre-recorded CD (Compact Disc) and a copy-limit method protect the data recorded on the pre-recorded CD from copied onto a recordable CD. The pre-recorded CD (Compact Disc) includes a data area of the pre-recorded CD and an indivisible file. The storage capacity of a data area of the recordable CD is Z. The indivisible file is stored in the data area of the pre-recorded CD and has a file size Y which approximately ranges between Z+10 MB and Z+100 MB. The copying action is prohibited to proceed when the indivisible file with a size is larger than the storage capacity of the data area of a recordable CD is determined.

Abstract: A drum washing machine according to the present invention restrains vibration and noise at the time of spin-drying. For this purpose, a drum 4 is supported so as to be rotatable by rotating shafts 51L and 51R respectively extending in an approximately horizontal direction outward from its end surface walls 41L and 41R. Water storage balancers G are respectively attached to the end surface walls 41L and 41R of the drum 4, and a fluid balancer 9 is further attached to the end surface wall 41L.

Abstract: A POR circuit includes a signal generator which has a PMOS transistor and a first and second resistors connected in series. The PMOS transistor is controlled in accordance with a DPWD signal. A first signal obtained by dividing a voltage difference between the ground voltage and the supply voltage is output from a first node between the first and second resistors. The POR circuit also includes an edge generator which includes a third resistor and an NMOS transistor connected in series, and an inverter coupled to a second node between the third resistor and the NMOS transistor. The NMOS transistor is controlled in accordance with a voltage of the first signal output from the first node. When the NMOS transistor turns on, a second signal having an edge waveform is generated at the second node, the first inverter outputs a third signal which is a reversal of the second signal.

Abstract: This is a COC type semiconductor device in which a second bump of a second semiconductor chip is bonded on a first bump provided on a first semiconductor chip. The bumps of the first and second semiconductor chips are made of a first metal having relatively high melting point such as Au, and the junction portion of the bump is bonded through a second metal layer having lower melting point than that of the first metal. A step lower than the central part is formed at least in a part of the outer periphery at the top surface of the first bump. In this structure, in the semiconductor device of COC type, even if a protective film of polyimide or other resin is formed on the chip surface, a semiconductor device capable of maintaining a high bond strength in the junction portion of the bump is obtained.

Abstract: A control circuit to allow the use of an unbuffered DIMM in a system with a registered-DIMM-only chipset. The control circuit is for receiving an address signal and control signal outputted from the registered-DIMM-only chipset. Then, according to the DIMM installed into a memory module socket, the control circuit controls a transmitting module or buffering module to selectively output the address signal and control signal of the DIMM to the memory module socket. In a system with a registered-DIMM-only chipset, users can selectively use a registered DIMM or an unbuffered DIMM installed in the memory module socket according to actual condition.

Abstract: A semiconductor device is fabricated by a method that includes forming a conductive pattern on a semiconductor substrate, covering the conductive pattern with a dielectric layer, and planarizing the dielectric layer by chemical-mechanical polishing. To avoid global height differences, a dummy pattern is added to the conductive pattern if a predetermined condition is satisfied. The condition is based on the calculated density of the conductive pattern in a region including the region in which the dummy pattern is to be added. The calculated density may be adjusted according to the type of equipment used to deposit the dielectric layer, and the dummy pattern dimensions may be adjusted according to the calculated density. Such calculations avoid the need for human judgment and lead to more uniform planarization.

Abstract: A semiconductor memory includes bit lines, memory cells and a sense amplifier both of which are connected to the bit lines. Each of the memory cells includes a transistor and a capacitor. The capacitor is made of a material having a quantity of residual dielectric polarization in an electroless state in a hysteresis characteristic that is not reduced to less than a threshold value until after a lapse of a time of a refreshing cycle. The refresh cycle includes clock cycles. The sense amplifier detects an output current on the bit lines due to the residual dielectric polarization. The sense amplifier amplifies the output current to refresh the quantity of residual dielectric polarization of the capacitor when the detected level is equal to or larger than the threshold value. The sense amplifier does not amplify the output current when the detected level is less than the threshold value.

Abstract: A semiconductor device having a semiconductor chip, a wiring board joined to one surface of the semiconductor chip and electrically connected to the semiconductor chip, and a warp preventing board joined to the other surface of the semiconductor chip and composed of the same material as that of the wiring board. An external connection member for surface mounting may be arranged on a surface, facing away from the semiconductor chip, of the wiring board.

Abstract: A film fixing instrument for fixing films of different scales comprises: a loader for loading said films and comprising a loader window, said loader comprising a plurality of couplers on the sides of said loader window; an adjuster for adjusting said loader window, said adjuster comprising a plurality of fixers coupled with said a plurality of couplers, said loader selectively installed on said loader; a film clip for securing said films on said film fixing instrument. The films of different scales can be fixed on said film fixing instrument by adjusting the coupling method between said adjuster and said loader.

Abstract: A control valve for installation in a wobbleplate compressor with a changeable working volume is provided with an inlet for a connection to a pressure chamber, a first outlet for connection to a crank chamber, and a second outlet for connection to a suction chamber. A closing element cooperates with the second outlet and is acted upon by a device for controlling the gas mass flow.

Abstract: The present invention is a self-leveling hydrometer. A balance hanger is on top of a handle, which connects to a swinging support part. An imbalanced load is in the center of the floating measurement indicator and the imbalanced load can rotate freely in the round hole on the center of the floating measurement indicator. The imbalanced load has a protrudent round plate on edge that exposes on the round hole of the floating measurement indicator. A moveable hook, the support part and the imbalanced load can position the present invention in an absolute horizontal position for accurate liquid specific gravity readout. The present invention can also achieve easier and more accurate initial calibration process during manufacturing.