Abstract: A pull-out dish rack with a basic rack containing a wire framework for a dishwasher. The basic rack has a U-shaped construction and is fitted with at least a front or rear rack wall connected releasably to the basic rack, as seen by a user who is loading the dish rack with items which are to be washed. Additional parts, which accommodate a variety of items to be washed, can be fitted to accommodating devices on the front and/or rear walls. The additional parts may be adjustable and may include retaining elements for tall items or plates to be washed, and a spray device for use in subjecting items to be washed to an action of a cleaning liquid.

Abstract: A circuit is specified for producing exponential predistortion for a variable amplifier that contains two parallel-connected, controlled current paths, each having a diode that is followed by a differential amplifier stage. The area ratio of the first diode and the second diode is in this case equal to the area ratio of the first transistor and the second transistor in the differential amplifier. Therefore, a current produced on the output side has exponential predistortion in comparison to a control signal that can be applied on the input side. This makes it possible to drive linear amplifiers dB-linearly. The present circuit can be used for radio-frequency purposes and allows good noise characteristics as well as a high degree of insensitivity to process parameter and temperature fluctuations.

Abstract: An adapter apparatus for receiving memory modules, each of which has a plurality of data terminals and a plurality of control terminals, comprises first data terminals, first control terminals, a first socket for receiving a first memory module with second data terminals and second control terminals, wherein the second data terminals are associated to the data terminals of the first memory module, wherein the second control terminals are associated to the control terminals of the first memory module, a second socket for receiving a second memory module with third data terminals and third control terminals, wherein the third data terminals are associated to the data terminals of the second memory module, wherein the third control terminals are associated to the control terminals of the second memory module, a signal transformation circuit with an input and an output, wherein the input is connected to the first control terminals, and wherein the output is connected to the second control terminals and to the thi

Abstract: An optical for wavelength reference measurement has in essence an optical conductor with integrated fiber Bragg grating that has a transmission maximum at a desired wavelength. Arranged downstream of the fiber Bragg grating is a photoreceiver receiving the measuring radiation beam passing through the fiber Bragg grating. If desired, it is possible to use a beam splitter to produce a reference radiation beam that is detected in a further photoreceiver.

Abstract: An electronic device has a semiconductor chip and a passive component, whose electrical values can be varied. The semiconductor chip is electrically conductively connected to a rewiring structure that, together with the semiconductor chip and with the passive component, is enclosed by a housing made of plastic. A method for producing the electronic device is also described.

Abstract: In a method for demodulating a CPFSK-modulated signal, the n−1-th substitute symbol an−1 which occurs in the linear approximation of the CPFSK is estimated in order to determine an n-th input data symbol dn on which the CPFSK modulation is based. The n−1-th substitute symbol an−1 is in this case estimated on the basis of the previously determined n−1-th input data symbol {circumflex over (d)}n−1.

Abstract: A wafer test apparatus for bringing the contact areas of the integrated circuits to be tested into electrical connection with the test contacts as uniformly as possible and therefore with relatively low necessary contact pressures. The test apparatus has a chuck for holding a wafer having at least one integrated circuit with a group of contact areas which define a wafer surface profile. A test head is configured opposite the chuck and has a performance board, on which a probe card with contacts for making contact with the contact areas of the integrated circuit is configured. Areas of the contacts, of the probe card, which are intended to come into contact with the contact areas define a test surface profile. Actuators are configured on the probe card for aligning the test surface profile in parallel with the wafer surface profile and for changing the distance between the performance board and the contacts in a direction substantially orthogonal to the wafer surface profile.

Abstract: The apparatus allows monitoring layer depositions in a process chamber. The apparatus has a light source, a sensor element, and at least one light detector. The sensor element is suitably configured in order to influence the intensity of the light beam measured by the detector by the thickness of the layer growing on the sensor element. The novel monitoring method for measuring the transmitted light intensity utilizes the apparatus. The sensor element has a continuous opening through which the intensity of the light is observed as a function of the opening grown over by the thickness of the growing layer.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device with a self-aligned contact, is described. A first conductor and a second conductor are formed on the surface of the semiconductor substrate. The first conductor and the second conductor are encapsulated with a first encapsulation and a second encapsulation, respectively. The first encapsulation and the second encapsulation contain titanium oxide, boron nitride, silicon carbide, magnesium oxide or carbon. The first encapsulation and the second encapsulation are suitable as a self-aligning etch mask for etching a self-aligned contact hole between the first conductor and the second conductor.

Abstract: A transmission configuration includes a plurality of individual lasers which are included in a two-dimensional laser array and emit radiation elements with coupled phases upon stimulation. The radiation elements enter a light-conducting core of a multimode optical conductor together.

Abstract: An integrated circuit can be operated in at least three different organization forms that can be set externally. A connection pad receives an external signal for stipulating one of the organization forms. An input of a control circuit for setting one of the organization forms is connected to the connection pad. Depending on the signal on the connection pad, the control circuit can generate at least three different states at the output to identify the respective organization forms. When the signal state has been read and the corresponding organization form has been activated, the control circuit is disconnected from a voltage supply for the integrated circuit. The inventive circuit allows the number of connection pads for stipulating the organization form to be kept low.

Abstract: The invention relates to a device for decollating flat objects from a stack, in particular objects individually separated from one another in the stack by interlayers, preferably printing plates. The object of the invention is to ensure that only one object is taken from the stack and made available for any further handling. A lifting device lifts the object from the stack and a separating device separates any article possibly adhering to the underside of the lifted object from the lifted object. The article possibly adhering may in particular be a second object or an interlayer. For example, the separating device may be of similar construction to the lifting device and in particular include suction elements.

Abstract: A method and a device generate a reference voltage for discriminating between the logic states of a data signal received at a receiving end. A transmitting device transmits a continuous clock signal with a constant pulse period duration and a symmetrical sequence of low and high clock signal states in such a way that, at the receiver end, the clock signal has the same low and high voltage levels as the received data signal and it is subject to the same system-governed variations as the received data signal. An integrator at the receiver end receives and integrates the clock signal, and the integrated value becomes the reference voltage for the receiver unit.

Abstract: A control command, which has a command header sequence and a sequence of n parameters, is generated in a data source of a local network. The control command has a variable length defined by the data source. The control command is passed to the ring data line of the local network and is forwarded to a data sink. This data sink contains a control unit, a picture output unit, an interface and a memory, in which video data are stored. The video data can be read out and displayed on the picture output unit. The control command has n parameters of which the first m parameters are interpreted by the control unit. The number m is determined by the properties of the data sink and is independent of the properties of the data source. Using the m interpreted parameters, specific video data are read from the memory and are reproduced.

Abstract: After exposing a semiconductor wafer, quality parameters, for example, the critical dimension, the overlay accuracy, and alignment parameters, etc. are measured in successive inspections and are compared with tolerance range widths that are specified dynamically by calculating the range from measured values of one or more of the other quality parameters. For example, the tolerance range width for the overlay accuracy can be increased for smaller measured critical dimension values of the same structures without affecting the functionality of the integrated circuit. Using a forward mechanism, the tolerance ranges can also be adjusted with the quality parameter measurements from a first layer to the quality parameter tolerance range width of a second layer.

Abstract: The MRAM semiconductor memory configuration has MRAM main cell arrays in the form of a crosspoint array or a transistor array together with redundant MRAM cell arrays formed of redundant MRAM memory cells arranged in a plurality of planes and provided on the same chip. The redundant MRAM cell arrays are distributed over the individual planes of the memory matrix or one plane of the memory array is used in its entirety for providing redundant cell arrays.

Abstract: A trench capacitor for use in a semiconductor memory cell is formed in a substrate and includes a trench having an upper region and a lower region. An insulation collar is formed in the upper region of the trench. The lower region of the trench extends through a buried well. A dielectric layer, which is formed from tungsten oxide, serves as a capacitor dielectric. A conductive trench filling, which is filled into the trench, is formed from silicon or a tungsten-containing material such as tungsten, tungsten silicide or tungsten nitride.

Abstract: An electronic component has a housing and at least two terminal pins protruding out from a first side face of the housing. The housing has an isolation barrier formed between the at least two terminal pins. The isolation barrier extends the leakage path between two neighboring terminal pins and consequently increases the dielectric strength.