Abstract: An optoelectronic semiconductor device (10) with a radiation-emitting semiconductor diode (3), preferably a diode laser (3), is particularly suitable as a radiation source in optical read and write systems such as bar code readers, laser printers, and optical disc systems. The diode (3) has one or two exit surfaces for radiation (R) which are provided with coatings (4). In such a device (10) it is found that a deposit rich in carbon is formed on the coating (4) of the laser (3), with the result that the output of the diode (3) fluctuates. The deposit may be avoided in that organic impurities are avoided or a selection is carried out in that respect. However, this is cumbersome and expensive.In a device (10) according to the invention is the diode (3) is present within an envelope (20) which is hermetically sealed off from the outer world (40), and a gaseous oxidizing compound (30) is present inside the envelope (20).

Abstract: An I/Q quadraphase modulator circuit for correcting phase errors of, typically, LO input quadrature signals. The circuit uses a pair of Gilbert cell multipliers, to the bottom ports of which are applied I and Q signals, and to the top ports of which are applied sum and difference, limited, quadrature, differential signals. The result is to make the circuit less sensitive to LO phase errors and thus to improve sideband (image) rejection over the conventional circuit typically using one Gilbert cell multiplier.

Abstract: Semiconductor diode lasers are used inter alia in optical disc systems, laser printers, bar code readers, and glass fibre communication systems. Lasers having a so-called (weakly) index-guided structure are very suitable for many applications inter alia because they can be manufactured comparatively simply and reliably. A disadvantage of the known (weakly) index-guided laser is that the so-called P-I (=optical power-current) characteristic thereof exhibits a kink. Such a kink limits the use of the laser to a relatively low optical power. According to the invention, such a (weakly) index-guided laser has a resonance cavity with a length for which the optical power at which a kink occurs in the P-I characteristic is a maximum. It was a surprise to find that the occurrence of a kink in the P-I curve of such a (weakly) index-guided laser depends on the length of the resonance cavity. Very surprising is the appearance of a maximum value in this kink power as a function of the length of the resonance cavity.

Abstract: The charge storage elements (3) of an array (2) are arranged in columns and rows and each column is coupled to an associated column conductor (4). Each storage element (3) in a row is coupled to an associated second conductor by a first rectifying element (D1) and to an associated third conductor by a second rectifying element (D2). Each row shares its second and third conductors (5a, 5b, 6a, 6b) with any adjacent rows. One of the two conductors of each row forms a row conductor (5a, 5b) and the other (6a, 6b) one of first and second reference conductors (6a and 6b). Adjacent row conductors (5a, 5b) are separated by a reference conductor (6a or 6b). Each first reference conductor (6a) is separated from any other first reference conductor (6a) by two row conductors (5a, 5b) and a second reference conductor (6b).

Abstract: The storage elements (3) of an array (2) are arranged in rows and columns with the storage elements (3) in a column being coupled to a first conductor (4) and the storage elements (3) in a row being coupled to a second (5) and to a third (6) conductor. Each storage element (3) in a row is coupled to the associated second conductor (5) by a first rectifying element (D1) and to the associated third conductor (6) by a second rectifying element (D2) with the first and second rectifying elements (D1 and D2) allowing the passage of current when forward-biased by applied voltages. The third conductors (6) also form the second conductors (5) of any adjacent rows. The first and second rectifying elements (D1' and D2') of alternate rows (N, N+2, N+4, . . . ) are oppositely oriented to those (D1" and D2") in the remaining rows (N+1, N+3, . . . ).

Abstract: A differential comparator with a hysteresis proportional to the peak value of the input signal. The comparator operates independently of the magnitude of the supply voltage and of the ambient temperature while handling both differential and single-ended inputs and without introducing a delay between the input and the output.

Abstract: A semiconductor device includes a semiconductor body (1) having a semiconductor element with connection points (2, 3) which adjoins a surface (4) of the semiconductor body (1) and is laterally insulated and surrounded by a first depression (5) in the surface (4), which depression (5) is provided with a wall (6) and a bottom (7), while the surface (4) of the semiconductor body (1) and the wall (6) and bottom (7) of the depression (5) are covered with an insulating layer (8). The connection points (2, 3) are provided in the insulating layer (8) on the surface (4) of the semiconductor body (1) and are connected to conductor tracks (10, 11) which connect the connection points (2, 3) across a wall (6) to connection surfaces (12, 13) associated with the connection points (2, 3) and situated on the bottom (7). It is found in practice that, in the case of progressive miniaturization, the manufacture of such devices leads to rejects caused by short-circuits between connection surfaces (12, 13).

Abstract: A BiCMOS power driver circuit for interfacing to a bus comprises circuitry for channelling current from a power source to the base of a bipolar device to pull the output all the way down to within a bipolar V.sub.SAT voltage drop of ground, and then uses feedback to turn-off the pull-down circuit to conserve power. A similar circuit functions to provide Incident Wave Switching and Glitch Suppression by monitoring the voltage level at the output and sinking current as necessary to maintain a low logic level.

Abstract: A blue, green or blue-green stripe-geometry II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers is fabricated on a GaAs substrate. The stripe-geometry configuration is obtained by ion implanting a dopant such as Nitrogen or Oxygen into the structure to form blocking layer portions of higher resistivity in the second cladding layer and the second guiding layer. These blocking layer portions are positioned on both sides of, and thereby define, a stripe-shaped lateral confinement region of lower resistivity in the second cladding layer and the second cladding layer.

Abstract: A BiCMOS digital delay chain includes two signal paths coupled between an input terminal and an output terminal. The first signal path has two CMOS inverters coupled in series, while the second path has one CMOS inverter coupled to an BiNMOS inverter, with the latter being coupled to a BiCMOS pull-down circuit. By providing two signal paths between the input and output terminals of the delayed chain, a zero-static-power low-voltage circuit is obtained in which power-supply sensitivity is higher in one switching direction than in the other. This feature permits operation over a wide range of power supply potentials while minimizing changes in integrated circuit performance.

Abstract: A programmable semiconductor memory with filament or point diodes in the intersections of a matrix system can be manufactured with minimum dimensions and thus with a very high density owing to the absence of alignment tolerances. A possible problem is then posed by the strong leakage currents which may arise during programming owing to punch-through between adjoining diodes. Decreasing the leakage current through the use of a higher background concentration of the region in which these diodes are formed is not possible because this reduces the breakdown voltage of the pn junctions of the diodes too much. According to the invention, a more strongly doped surface zone is provided in the region between the diodes, which zone is situated at least at a distance from the diode points. In a specific embodiment, the zone extends less deeply into the region than do the diodes.

Abstract: A transconductance (g.sub.m) control circuit for bipolar or CMOS rail-to-rail input stages is provided. The g.sub.m is controlled by the use of multiple input pairs and can be used in CMOS or bipolar technology. In CMOS the g.sub.m -control works regardless of the operating region of the MOS transistor, whether it is weak, moderate or strong inversion.

Abstract: A II-VI semiconductor diode laser has a strained layer disposed on top of the structure. This strained layer, having a thickness of between about 0.05 microns and 2 microns, is either a single film or a stack of films, preferably of metal. The strain field produced by this layer in the semiconductor layer structure produces a change in the refractive index of the structure, due to the photo-elastic effect. By virtue of this effect a strain-induced waveguide is provided in the diode laser, with a strained layer in an edge, stripe or window structure. Furthermore, a tensely-strained layer covering the entire structure is used to produce a strain field similar to that which occurs when the structure is bent. This strain field will produce strain-enhanced gain in the underlying structure, which allows for operation of the laser at a lower threshold current.

Abstract: A method of manufacturing a semiconductor device comprising a semiconductor body (1) with field insulation regions (14) formed by grooves (10; 24) filled with an insulating material (13) is disclosed. The grooves (10; 24) are etched into the semiconductor body (1) with the use of an etching mask (9) formed on an auxiliary layer (6) provided on a surface (5) of the semiconductor body (1). The auxiliary layer (6) is removed from the portion (11) of the surface (5) situated next to the etching mask (9) before the grooves (10; 24) are etched into the semiconductor body (1), and the auxiliary layer (6) is removed from the edge (12) of the surface (5) situated below the etching mask (9) after the grooves (10; 24) have been etched into the semiconductor body. Furthermore, a layer (13) of the insulating material is deposited on the semiconductor body (1), whereby the grooves (10; 24) are filled and the edge (12) of the surface (5) situated below the etching mask (9) is covered.

Abstract: A semiconductor device in which a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in which a lower electrode (11), an oxidic ferroelectric dielectric (12) and an upper electrode (13) are provided in that order, the upper electrode not covering an edge of the dielectric, after which an insulating layer (14) with superimposed metal conductor tracks is provided. According to the invention, the edge of the dielectric (12) not covered by the upper electrode (13) is coated with a coating layer (14, 20, or 30) practically imperviable to hydrogen, after which the device is heated in a hydrogen-containing atmosphere. Heating in a hydrogen atmosphere neutralizes dangling bonds which arise during deposition of the conductor tracks on the insulating layer, while the coating layer protects the dielectric from attacks by hydrogen. The semiconductor device then has a shorter access time.

Abstract: The invention relates to a semiconductor memory with a semiconductor body which is provided at a surface with a system of memory elements arranged in rows and columns. For addressing, the surface is provided with a system of mutually adjacent parallel selection lines 4, each coupled at one end to a selection transistor 19 with which the connection between the selection line and peripheral electronics can be opened or closed. These transistors are thin-film transistors which are formed, for example, in the selection lines themselves. As a result of this, the selection lines, and thus also the memory elements in the matrix, can be provided with minimum pitch.

Abstract: An output driver circuit for preventing the emission of high-frequency signals, including two MOS output transistors (M2, M1) which are connected in series between the supply voltage (Vcc) and ground, and two capacitors (C1, C2) which are arranged between the output node (N1) and the gate of a respective output transistor. The voltages on the gates of the output transistors are quickly increased to the conductivity threshold before a transition occurs on the output, whereby acceleration circuits supply the gates of the output transistors with high currents. During the transition of the output signal, the acceleration circuits are switched off and smaller currents are applied to the gates of the output transistors; the capacitances (C1, C2), being connected in phase opposition, prevent excessively fast variation of the voltage on the output node.

Abstract: An arbiter provides at an output a priority signal that indicates which one of the input signals at an input has gained priority over all other ones. The arbiter comprises a signal processing path between the input and the output for determining the priority signal. The arbiter further comprises a control means coupled to the signal path for detecting (rare) conflicts among priority candidates. In response to the detected conflict, the control means generates control signals to modify the signal path. This conflict-solving part of the arbiter is located outside the signal path. Accordingly, a signal propagation delay in the path is largely independent of the number of input signals.

Abstract: Radiation-emitting semiconductor diodes are used as laser diodes or LEDs inter alia in optical disc systems, laser printers and bar code readers. The emission wavelength in these cases lies preferably in the visible range of the spectrum. Known diodes have an active layer (3A) and cladding layers (2, 4) which comprise either AlGaAs or InAlGaP. These known diodes have the disadvantage that they do not cover a portion of the visible spectrum between 880 and 600 nm.A diode according to the invention is characterized in that the active layer (3A) comprises Al.sub.x Ga.sub.l-x As and the cladding layers (2, 4) comprise Al.sub.y Ga.sub.w In.sub.l-y-w P, while the active layer (3A) has such an aluminjure content (x) and such a thickness (d) that the wavelength of the photoluminescence emission lies between approximately 770 and 690 nm.

Abstract: An integrated half-bridge driver circuit for driving a half-bridge output stage having high-side and low-side power transistors coupled together at a high-voltage output terminal includes a low-voltage control circuit and a floating well within the integrated circuit which has a timing circuit for controlling the activation of the high-side power transistor. The driver circuit further includes a high-voltage interface circuit for coupling a control signal from the low-voltage control circuit to the timing circuit within the floating well. In this manner, an integrated half-bridge driver circuit is obtained which is capable of operating at high frequencies due to the relatively low power dissipation in the control and timing circuitry.