Abstract: Two current circuits are between two common terminals (+V.sub.B and -V.sub.B). The ratio between the currents in the two current circuits is defined by a first current-dividing circuit, and the absolute values of these currents are defined by means of a second current-dividing circuit, in particular a resistor in this second current-dividing circuit. In order to ensure that the current-stabilizing assumes the proper state upon activation, a first current-supply circuit is coupled to the input of the second current-dividing circuit, which current-supply circuit comprises the series arrangement of a resistor and a transistor arranged as a diode, and a second current-supply circuit is coupled to the output of the current-dividing circuit, which second current-supply circuit includes a transistor whose base is connected in common with that of the transistor of the first current-supply circuit.

Abstract: A unipolar hot-electron or hot-hole transistor has its base region and/or collection region electrically contacted and extended to the semiconductor body surface by a metal-silicide region which extends through a silicon surface region belonging to either the transistor emitter or the emitter-base barrier. The metal-silicide region forms an isolating Schottky barrier with an adjacent semiconductor portion. Preferably, the surface region is divided into separate first and second portions by the base-contacting metal-silicide region, with the emitter-base barrier and base-collector barrier terminating at one or more sides in this metal-silicide region. The isolating Schottky barriers are good quality unipolar diodes, thus avoiding minority charge carrier storage effects in these unipolar transistors, while the metal-silicide region can form good ohmic contacts to highly-conductive base and collector regions which typically comprise a high-doped semiconductor layer or a metal-silicide layer.

Abstract: A self-registering method of manufacturing an air-(vacuum) -insulated crossing multilayer wiring system of large density is disclosed. Between the lowermost and uppermost wiring layers an intermediate layer is provided in which recesses are formed between the intermediate layer and the lowermost wiring layer. By means of said recesses the intermediate layer can be removed entirely at the area of the crossings during the etching process, while elsewhere portions of the intermediate layer remain as supporting parts or as connecting members.

Abstract: An electroluminescent device is provided with two semiconductor crystals, in each of which an electroluminescent junction is formed, which junctions can alternately be energized from an external current source. One of the semiconductor crystals is of the p/n-type and the other semiconductor crystal is of the n/p-type, while both crystals are provided on the bottom of a reflecting cavity of a single metal support.

Abstract: An RC active filter device which is implemented with integrated circuit technology. Each RC filter element of the device has a distributed series resistance and a distributed shunt capacitance. The series resistance is formed by a strip of resistive material which overlies a resistive plate (or substrate) with an intervening insulating layer to form the shunt capacitance. The filter device can be designed to have a pass-band ripple response which is not affected by variation in nominal absolute resistance and capacitance values resulting from process spreads. These variations only stretch or compress the filter response along the frequency axis. The filter device comprises three RC filter elements and an operational amplifier. The RC filter elements nearest the operational amplifier determine a low pass band, while the input filter element prevents high frequency components outside the low pass band being leaked directly to the filter device output.

Abstract: A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.

Abstract: An amplifier arrangement includes a first section and a second section. The second section has an output transistor which is protected by a protection circuit. The protection circuit acts on the input of the second section in order to obtain a higher gain in the protection loop. In order to preclude instabilities, the protection circuit has a falling frequency response with a flat portion in view of the frequency compensation of the second section.

Abstract: A current stabilizing arrangement includes a first circuit having a series arrangement of a first resistor, a second resistor, and the collector-emitter path of a first transistor having its base connected to a point between the first and second resistors. A second circuit includes the collector-emitter path of a second transistor whose base is coupled to the collector of the first transistor. By providing a third resistor in the first circuit, in series with the first and second resistors and connected between the base of the second transistor and the collector of the first transistor, improved current stabilization with variations in supply voltage is obtained.

Abstract: The invention relates to an integrated voltage-current converter circuit for generating a current which produces a voltage drop across a reference resistor, which voltage drop is determined by an input voltage. In order to compensate for the spread in width of the reference resistor formed in the integrated circuit, this reference resistor is formed by two parallel-connected resistors having the same resistance per unit area, the same length and different widths, and the compensated output current is formed by the difference between the currents which flows through these resistors.

Abstract: An integrated amplifier arrangement in which the d.c. voltage gain is suppressed, which includes two transistors arranged as a differential pair with an output between the collectors of these transistors. In order to improve the high-frequency properties of the amplifier arrangement, the collector circuit of the transistors includes two load transistors in cascade with the two transistors arranged as a differential pair, each load transistor including an impedance in its base circuit in order to obtain an inductive input impedance on the emitter side of the transistor. In order to obtain direct-current and low-frequency negative feedback for eliminating the d.c. gain, the base electrodes are cross-coupled to the collector electrodes of the load transistors.

Abstract: A semiconductor device having a semiconductor body includes a field effect transistor and an active transistor region with two electrode zones, one of which surrounds the other, and an island zone which is situated therebetween. These zones enclose channel regions over which there are provided gate electrodes, the first one of which surrounds the second. The gate electrodes are connected to bond pads present outside the active transistor region. The first gate electrode is interrupted at the area of the connection from the second gate electrode to a bond pad, both its ends being connected to another bond pad. Even at very high frequencies, the transistor exhibits a high gain, a high transconductance and a low input attenuation.

Abstract: A semiconductor laser of the DH-type has a first and a second passive layer, an interposed active layer and a top layer which may be disposed on the second passive layer. In the surface, a preferably V-shaped groove is provided on the side of the second passive layer, which groove extends at most over only part of the thickness of the second passive layer. According to the invention, the groove is filled selectively with a metal, preferably gold, up to the level of the surface, while on both sides of the groove there is present an insulating region, which is preferably obtained by proton implantation and does not extend up to the active layer. The invention also relates to a method in which the insulating region is provided in a self-aligned manner by ion implantation while using the metal as a mask. The groove is preferably filled with gold by an electroless method.

Abstract: A semiconductor memory includes a dynamic discharge circuit for the quick discharging of a power supply line to which a memory matrix row is connected when this power supply line changes over from the electrical selected state to the electrical rest state. A transistor which is rendered conductive by a dynamic potential difference which arises, due to the slow discharge of the power supply line, between this line and the selection circuit thereof, supplies a current for a brief period of time in order to achieve the quick discharging. The invention is typically used notably for the discharging of power supply lines of E.C.L.-type random access memories.

Abstract: The photocathode is of the type which comprises a photo-emissive layer consisting of at least an active layer of the P-type, a solid support for said semiconductor of a material which is transparent to radiation, a layer having a bonding glass for the photo-emissive layer on the support. The invention is characterized in that the support comprises two parts situated one on top of the other and which are bonded together, namely a thick second part (thickness for example 5 mm) of a type of glass having properties of thermal expansion which are substantially identical to those of the bonding glass and a part in the form of a disk-shaped first part (thickness for example 1 mm) of a material having softening and transition points which are much higher than those of the bonding glass and of the glass of the thick part.

Abstract: An electrically symmetrical temperature sensor includes two highly doped zones which are formed in a semiconductor body of one conductivity type, which are provided with connection contacts, and have the same conductivity type as that of the body. A temperature-dependent resistor is formed between the two highly doped zones. In order to avoid mechanical strains due to the temperature differences which occur during operation and which invalidate the resistance value, and in order to be able to incorporate the semiconductor body without great difficulty in simply-constructed envelopes, in particular in glass envelopes of the type frequently used for rectifier diodes, the zones of the same conductivity type are located opposite each other on opposite sides of the semiconductor body. Further, the semiconductor body comprises neutron- transmuted n-type silicon.

Abstract: An output stage comprising a differential amplifier (T.sub.1, T.sub.2) which comprises an additional current source (20) which conducts, via a transistor (T.sub.4) which is connected parallel to the base and the collector of one of the transistors (T.sub.1) of the differential amplifier, an auxiliary current through the load resistor (1) of the transistor (T.sub.1). A further branch of said current source 20 is formed by a transistor (T.sub.5) which is connected in series with a resistor (3), the conduction of the transistor (T.sub.5) being (indirectly) controlled by the current flowing through a resistor (2) which is connected between the transistor (T.sub.4) and the source (20).

Abstract: An insulated-gate field-effect transistor which may be of the D-MOS or V-MOS type includes a source region (1) which is surrounded by a second region (2) of opposite conductivity type, itself surrounded by a third region (3) associated with the transistor drain (4). An insulated gate (12) of the transistor is present on a channel area of the second region (2) between the source region (1) and a first part (31) of the third region (3). The third region (3) also has a surface-adjoining second part (32) which is remote from the first part (31) and preferably has a lower doping concentration than the second and source regions (2, 1).

Abstract: An electron source having a rapid response time comprises at least one n-p-n structure (and possibly an array of said n-p-n structure) formed in a silicon or other semiconductor body (10) by a p-type first region (1) between n-type second and third regions (2 and 3). Electrons (24) are generated in the n-p-n structure (2,1,3) for emission into free space (20) from a surface area (4) of the body (10) after flowing from the second region (2) through the first and third regions (1 and 3). The n-p-n structure (2,1,3) has electrode connections (12 and 13) only to the n-type second and third regions (2 and 3).

Abstract: The invention relates to an electronic gain control arrangement with a logarithmic control characteristic. Use is made of the property of current amplifier circuits having bipolar transistors that the current distribution varies as an exponential function of the control voltage. The circuit arrangement is symmetrical, so that even harmonics are compensated for.

Abstract: A circuit arrangement includes a differential amplifier, which supplies a balanced alternating voltage having a d.c. component which is filtered by means of a low-pass filter and is used for negative feedback. In order to avoid the use of a second filter capacitor, the voltages are supplied through a low-pass circuit to a second differential amplifier, which supplies an unbalanced d.c. control signal, which is supplied through a further low-pass filter having only one capacitor to the first differential amplifier.