Abstract: Verification testing of modules packaged within an integrated circuit are conducted utilizing I/O ports of the integrated circuit for inputting or outputting incoming and outgoing signals, with three sets of externally controlled, tri-state buffers provided for each module. A first set selectively connects predetermined I/O contacts of each module interconnected to contacts of other modules, a second set selectively connects predetermined I/O contacts of each module to the I/O ports and a common test bus, and a third set applies the last logic state on each I/O contact before isolation by a buffer from the first set. Whenever a module is selected for testing, the current value that appears on each I/O contact that is connected to other modules is stored in its corresponding bus holder, so as to essentially prevent DC leakage currents.

Abstract: A method of implementing a reference current measurement mode within a reference array programming mode or a reference array erase mode in a semiconductor chip is disclosed. This implementation leads to significant reduction in testing time for the semiconductor chip, increasing production volume and revenues.

Abstract: A method and system for performing failure analysis on a silicon on insulator (SOI) semiconductor device is disclosed. The SOI device includes a plurality of conductive structures in a silicon region. The silicon resides on a box insulator, which resides on a silicon substrate. The method and system include providing a cross-section of the SOI semiconductor device. The cross-section of the SOI semiconductor device includes a portion of the plurality of conductive structures. The method and system also include staining the cross-section of the SOI semiconductor device using a stain. The stain etches the silicon region in the SOI semiconductor device without etching a remaining portion of the SOI semiconductor device not composed of silicon.

Abstract: A network transmitter for generating frames of data for transmission is provided. The transmitter includes a frame generation circuit with a register storing a bit sequence corresponding to a network standard training bit sequence. A multiplexer includes a first input receiving bits from the register corresponding to the network standard training bit sequence and a second input receiving bits representing the data for transmission.

Abstract: The cross-sectional area of polysilicon lines is increased by selectively epitaxially growing an upper portion of the polysilicon line in the presence of a dielectric layer exposing the upper portion. Thus, a substantially T-shaped line is obtained, allowing a minimum bottom-CD while insuring a sufficient high conductivity.

Abstract: A physical layer transceiver of a home network station connected to a telephone medium has an architecture enabling adaptation of detection circuitry based on received network signals to enable reliable recovery of data signals. The physical layer transceiver includes an input amplifier that amplifies network signals according to one of 128 gain settings set by a receiver gain control signal. A signal conditioning circuit includes an envelope detector configured for outputting an envelope of the amplified received signal, and an energy detector configured for outputting an energy signal of the amplified received signals. The envelope signal and the energy signal are supplied to slicer threshold circuits, configured for outputting noise, peak, data event and energy event signals based on noise threshold, peak threshold, data transition threshold, and energy threshold signals, respectively.

Abstract: A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.

Abstract: Multiple network switches are configured having memory interfaces that transfer segmented packet data to each other via a unidirectional data bus ring connecting the network switches in a single ring or “daisy chain” arrangement. The memory interfaces are also configured for transferring the segmented packet data to respective local buffer memories for temporary storage. The memory interfaces transfer the data units according to a prescribed sequence, optimizing memory bandwidth by requiring only one read and one write operation to and from the local buffer memory for each segmented packet data being received and transmitted through the switches.

Abstract: An organic memory cell having a CuX layer made by implantation is disclosed. The organic memory cell is made of two electrodes, at least one containing copper, with a controllably conductive media between the two electrodes. The controllably conductive media contains an organic semiconductor layer and CuX layer made by implantation of a Group VIB element.

Abstract: An ESD protection device is provided for an integrated circuit. The ESD protection device includes a power supply clamp device formed from a diode and coupled between a first power supply VCC and a second power supply VSS. An input protection device is also provided which is formed from a diode coupled between an input pad and the first power supply and a second diode coupled between the input pad and a second power supply. The diodes have an adjusted reverse breakdown voltage that is higher than the voltage supply VCC used to power the peripheral circuitry that drives circuitry within a core of the integrated circuit. The adjusted reverse breakdown voltage is also lower than the breakdown voltage of gate oxide layers used within the peripheral circuitry.

Abstract: A method of reading a memory cell, and a memory array using the method, are described. An electrical load is applied to a first node in the memory array, the first node corresponding to the memory cell. A second node in the memory array, the second node on a same word line as the first node, is precharged. The second node is separated from the first node by at least one intervening node in the same word line.

Abstract: A conductive element of an integrated circuit wiring network is formed by a plating process. A seed layer for the conductive material is grown on the sidewalls and bottom surface of a trench using a low energy ion implantation process. The implantation is performed at an angle to the substrate to achieve coverage of the trench sidewalls. The resulting seed layer avoids constricting or closing the opening of the trench and has an approximately uniform thickness.

Abstract: A real time clock (RTC) is described several timekeeping dependability and timekeeping security attributes. The RTC may have several registers for storing values, at least one of which stores a value which is safeguarded. For example, a “TrustQualityState” register stores a “TrustQualityState” value which is dependent upon a timekeeping accuracy of the RTC. The “TrustQualityState” value may also be dependent upon timekeeping stability, reliability, and/or security of the RTC (e.g., a tamper resistance of the RTC). The RTC includes an access unit coupled between the “TrustQualityState” register and a bus used to access the “TrustQualityState” register. The access unit controls access to the “TrustQualityState” register in order to safeguard the “TrustQualityState” value. The access unit receives read and write commands directed to “TrustQualityState” register via the bus.

Abstract: A method is presented wherein an engineering data collection (EDC) subsystem of a process control system as embodied is responsible for configuring data collection, distributing collected data, and storing collected data, and is supported through underlying interfaces in a transaction and performance monitoring system. In an embodiment, an engineering data collection (EDC) broker accepts data from equipment interfaces or a tap subsystem, then distributes the data to all subscribers such as data history, the engineering data analysis (EDA) system interface, and the statistical process control (SPC) subsystem as disclosed herein. Engineering data analysis system interface is responsible for transmitting raw data and process control system data to engineering data analysis system. Data history subscribes to all data and stores it in the transaction and performance monitoring system's online transaction processing (OLTP) database.

Abstract: An array of non-volatile memory cells includes active columns of cells wherein a data pattern may be stored adjacent to damaged or inactive columns wherein data is not stored. A method of storing a data pattern and reproducing the data pattern within such an array comprises storing a charge within a selected plurality of the memory cells within the active column. The selected plurality of memory cells represents a portion of the data pattern. An inactive memory cell programming pattern is identified. The inactive memory cell programming pattern identifies all, or a selected plurality, of the memory cells in the inactive column in which a charge is to be stored for the purpose of periodically storing a charge in the memory cells first inactive column to prevent over erasure, during bulk erase, and leakage from the inactive cells to adjacent active cells. A charge is stored on the selected plurality of the memory cells in the first inactive column.

Abstract: A method of manufacturing an integrated circuit is provided having a semiconductor wafer. A chemical-mechanical polishing stop layer is deposited on the semiconductor wafer and a first photoresist layer is processed over the chemical-mechanical polishing stop layer. The chemical-mechanical polishing stop layer and the semiconductor wafer are patterned to form a shallow trench and a shallow trench isolation material is deposited on the chemical-mechanical polishing stop layer and in the shallow trench. A second photoresist layer is processed over the shallow trench isolation material leaving the shallow trench uncovered. The uncovered shallow trench is then treated to become a chemical-mechanical polishing stop area. The shallow trench isolation material is then chemical-mechanical polished to be co-planar with the chemical-mechanical stop layer and the chemical-mechanical polishing stop treated area.

Abstract: According to one exemplary embodiment, a method for establishing a relationship between Joule heating in a conductor and a current density in the conductor is implemented by performing wafer level measurements. According to this exemplary embodiment, wafer level measurements are performed to arrive at a temperature coefficient of resistance in the conductor. The method also includes determining a thermal resistance of the conductor. The thermal resistance is then utilized to establish a relationship between Joule heating in the conductor and the current density in the conductor. The relationship so obtained is then utilized to determine design rules, mean time to fail, and other information to aid in the design of reliable semiconductor devices. According to another exemplary embodiment, a wafer level measurement system is utilized to establish a relationship between Joule heating in a conductor and a current density in the conductor.

Abstract: A system for monitoring a fabrication process is provided. The system includes one or more light sources, each light source directing light to one or more gratings on a wafer. Light reflected from the gratings is collected by a measuring system that processes the collected light. The collected light is indicative of distortion due to stress at respective portions of the wafer. The measuring system provides distortion/stress related data to a processor that determines the acceptability of the distortion of the respective portions of the wafer. The collected light may be analyzed by scatterometry systems to produce scatterometry signatures associated with distortion and to produce feed-forward control information that can be employed to control semiconductor fabrication processes.

Abstract: Aspects for revealing active regions of a silicon-on-insulator (SOI) circuit for inspection from a backside of a DUT are described. The aspects include etching a substrate layer of an SOI circuit and removing a buried oxide layer beneath the substrate layer. From these steps, active regions beneath the buried oxide layer are revealed.

Abstract: The present invention provides a solder plating system with automatic monitoring of wash fluid pressure. The system automatically activates an alarm and/or initiates shutdown of a solder plating machine when the pressure reading indicates a failure of the wash fluid supply. The system thereby reduces the number of parts that are affected by failures in the wash fluid supply system. In some cases, problems with the wash fluid supply are detected before any parts are affected.