Abstract: A testing system and method of operation therefor is provided including a test fixture for electrical testing above a thermal threshold temperature of a low dielectric constant material and having a test-chip-die-sized enclosed volume. The test fixture has an electrical connection from the enclosed volume to the outside thereof and a removable lid for sealing the enclosed volume in the test fixture.

Abstract: A process for improving the accuracy of critical dimension measurements of features patterned on a photoresist layer using a scanning electron microscope (SEM) is disclosed herein. The process includes providing an electron beam to the photoresist layer and transforming the surface of the photoresist layer before the SEM inspection. The surface of the photoresist layer is transformed to trap the outgassing volatile species and dissipates built up charge in the photoresist layer, resulting in SEM images without poor image contrast.

Abstract: A method of forming a dielectric layer includes placing a semiconductor wafer in a reaction chamber. Oxygen, hafnium and silicon sources are separately provided to the reaction chamber to react with the wafer. After each source has reacted, a monolayer or near-monolayer film is produced. Each source may also be provided to the reaction chamber a number of times to achieve a film having the desired thickness.

Abstract: The present invention relates to a method and related structure for reducing ground bounce during write operations from a microprocessor. More specifically, the address and data signal lines of the microprocessor are divided into three transmission groups. The first transmission group transitions its data onto the bus lines with no delay. The second transmission group transitions its signal lines onto the bus with a half clock period delay of the core frequency clock. Finally, the third transmission group transitions its signal lines onto the bus with a full clock period delay of the core frequency clock. In this way, parallel writes by the microprocessor have their current sinking associated with that write distributed over an entire clock period of the core frequency clock such that ground bounce associated with that current sinking is reduced.

Abstract: A network switching system having a plurality of multiport switch modules and respective connected buffer memory devices assigns in each of the buffer memory devices a memory segment for storage of frame data from a corresponding one of the switch modules. Each memory device is divided into memory segments, also referred to as memory regions, wherein each memory segment is configured for storing frame data from a corresponding one of the switch modules. Hence, each switch module is configured for writing frame data, for a data frame received on one of the corresponding switch ports, into the corresponding assigned memory segment of each of the buffer memory devices. Any one of the switch modules can access any location of the buffer memory devices, enabling any one switch module to retrieve frame data from the buffer memory devices that was stored by another one of the switch modules.

Abstract: A field effect transistor (FET) is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. The channel region is lightly doped with a first impurity to increase free carrier conductivity of a first type. The source region and the drain region are heavily dopes with the first impurity. A gate and a back gate are positioned along the side of the channel region and extending from the source region and is implanted with a second semiconductor with an energy gap greater than silicon and is implanted with an impurity to increase free carrier flow of a second type.

Abstract: A buffer circuit for a peripheral interface circuit in an I/O node of a computer system. A buffer circuit includes a first buffer and a second buffer. The first buffer may be configured to store a plurality of selected packet commands within a plurality of storage locations. The second buffer is coupled to the first buffer and may be configured to store a plurality of index values. Each index value corresponds to one of the storage locations in the first buffer. The buffer circuit further includes a write logic circuit that is coupled between the first buffer and the second buffer. The write logic circuit may be configured to successively read each of the plurality of index values from the second buffer and to cause a selected packet command to be stored in each storage location corresponding to each of the plurality of index values within the first buffer.

Abstract: Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein, including special vapor prime and development operations.

Abstract: A system and method for monitoring and controlling a power-manageable resource. In one embodiment, a power manageable resource, such as a bus in a computer system, may be shareable among a number of power-manageable devices. A resource monitor may also be coupled to the power-manageable resource. The resource monitor may be configured to monitor the devices coupled to the power manageable resource. More specifically, the functions of the resource monitor may include monitoring the active/inactive state of each of the attached devices. The resource monitor may be configured to cause the sharable resource to be powered down if it is determined that all the attached devices are in an inactive state.

Abstract: A method of determining the active region width (10) of an active region (4) by measuring the respective gate currents (Ig,100, Ig,100′, Ig,100″) of respective composite capacitance structures (100, 100′, 100″), respectively comprising at least one capacitor element (16, 17, 18; 16′, 17′, 18″; 16″, 17″, 18″) having respective predetermined widths (Wi) for fabricating a flash memory semiconductor device, and a device thereby fabricated. The present method also comprises plotting the respective gate currents (Ig,100, Ig,100 ′, Ig,100″) as a quasi-linear function (IW) of the respective predetermined widths (Wi), extrapolating a calibration term (WI=0) from the quasi-linear function (IW), and subtracting the calibration term (WIg=0) from the respective predetermined widths (Wi) to define and constrain the active region width (10) for facilitating device fabrication.

Abstract: Multiple network switch modules have memory interfaces configured for transferring packet data to respective buffer memories. The memory interfaces are also configured for transfer among each other data units of data frames received from different network switch modules. A shared switching logic monitors (“snoops”) the data units as they are transferred between network switch modules, providing a centralized switching decision logic for multiple network switch modules. The memory interfaces transfer the data units according to a prescribed sequence, optimizing memory bandwidth by concurrently executing a prescribed number of successive memory writes or memory reads. A preferred embodiment includes a distributed memory interface in between the network switch modules and a shared memory system.

Abstract: A buffer circuit for rotating outstanding transactions. A buffer circuit includes a buffer and a command update circuit. The buffer may be configured to store packet commands that belong to a respective virtual channel of a plurality of virtual channels. The packets may be stored in the buffer to await transmission upon a peripheral bus. Once a given packet is selected for transmission, a peripheral bus cycle corresponding to the given packet command may be generated upon the peripheral bus. The command update circuit may be configured to generate a modified packet command in response to receiving a partial completion indication associated with the peripheral bus cycle. The command update circuit may also be configured to cause the modified packet command to be stored within the buffer.

Abstract: A system for regulating (e.g., terminating) a development process is provided. The system includes one or more light sources, each light source directing light to one or more patterns and/or gratings on a wafer. Light reflected from the patterns and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides development related data to a processor that determines the acceptability of the development of the respective portions of the wafer. The collected light may be analyzed by scatterometry and/or reflectometry systems to produce development related data and the development related data may be examined to determine whether a development process end point has been reached, at which time the system can control the development process and terminate development.

Abstract: A test system for a design of a network device under test includes an oscillator configured for generating a first clock signal for a first clock domain, and field programmable gate arrays. Each field programmable gate array is configured for performing device operations according to the first clock domain and transferring data to another device at a network data rate based on a second clock domain. Each field programmable gate array includes clock conversion logic configured for generating a second clock signal for the second clock domain, based on the first clock signal. Hence, the generation of the second clock signal within each field programmable gate array ensures that timing accuracy is maintained, enabling communication between the field programmable gate arrays at high-speed data rates based on the second clock domain.

Abstract: A method for initializing a computing system comprising a plurality of devices which communicate on a communication link comprising a plurality of independent point-to-point links is provided, each of the point-to-point links interconnecting a respective pair of the plurality of devices. The method includes a link initialization procedure comprising initially configuring each respective pair of devices to communicate on the respective interconnecting link using common communication parameters, including a common frequency and a common link width. The link initialization procedure also may include an optimization procedure for determining maximum communication parameters for each interconnected pair of devices. If the maximum compatible parameters differ from the common parameters for any pair of devices, then the pair of devices may be reconfigured to communicate on the interconnecting link using the maximum compatible parameters.

Abstract: A system and method for transferring data using an early response signal to indicate subsequent transmission of data after a fixed latency, wherein the signal and data are transferred from a first clock domain to a second clock domain using a clock skipping technique. In one embodiment, an early response signal is transmitted by a first device k clock pulses prior to transmission of the data. The receiving device, which is operating at a higher clock rate, receives the early response signal and delays the signal by the number of skipped pulses which will occur in the second clock domain before the occurrence of the kth valid pulse. The second device employs a skip pattern generator to generate a signal indicative of this number of skipped pulses and provides the number to a delay circuit which delays the early response signal for an this number of clock pulses. The delayed early response signal is then output to the appropriate logic to indicate the latency of the subsequent data transfer.

Abstract: The reliability and electromigration life-time of planarized metallization features, e.g., copper, inlaid in the surface of a layer of dielectric material, are enhanced by a chemical vapor deposition process for depositing a passivation layer over the metallization patterns which comprises maintaining on the upper surfaces of the metallization features, at or below a first temperature, an inhibiting film previously deposited thereon. The inhibiting film substantially inhibits oxide layer formation on the surface of the metallization features below the first temperature. Passivation layer deposition occurs at a second temperature higher than the first temperature such that the time interval between removal of the inhibiting film and formation of the passivation layer is short enough to substantially inhibit the formation of oxides on the surface of the metal feature.

Abstract: A computer-based system is configured for generating a first data structure having entries representing respective network nodes having layer 2 and layer 3 network addresses. The system generates a second data structure, having a plurality of data packet headers, by selecting source and destination pairs from the first data structure and combining the respective layer 2 and layer 3 network addresses from the respective selected source and destination pairs with randomly-generated numbers representing layer 3 payload data. The second data structure is supplied to a switch model configured for parsing the layer 3 network addresses according to selected hash functions. Hence, the computer-based system is able to evaluate the selected hash functions based on a time-independent analysis, eliminating the necessity of building an actual network in hardware or simulating network traffic over a period of time.

Abstract: A method and mechanism for performing an unconditional stack switch in a processor. A processor includes a processing unit coupled to a memory. The memory includes a plurality of stacks, a special mode task state segment, and a descriptor table. The processor detects interrupts and accesses a descriptor corresponding to the interrupt within the descriptor table. Subsequent to accessing the descriptor, the processor is configured to access an index within the descriptor in order to determine whether or not an interrupt stack table mechanism is enabled. In response to detecting the interrupt stack table mechanism is enabled, the index is used to select an entry in the interrupt stack table. The selected entry in the interrupt stack table indicates a stack pointer which is then used to perform an unconditional stack switch.

Abstract: A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.