Abstract: A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid.

Abstract: A technique for improving the thermal power dissipation of an integrated circuit includes reducing the thermal resistivity of the integrated circuit by increasing heat transfer in vertical and/or lateral directions. These results are achieved by increasing the surface area of the backside and/or the surface area of the lateral sides of the integrated circuit die. In some embodiments of the invention, an integrated circuit includes circuit elements formed closer to a first surface of a semiconductor substrate than to a second surface of the semiconductor substrate. The semiconductor substrate has a varying profile that substantially increases the surface area of a thermal interface formed on the second surface as compared to the second surface being substantially planar. A maximum depth of the profile is less than the thickness of the semiconductor substrate.

Abstract: A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a second side of the fin structure opposite the first side, and a top gate formed on top of the fin structure. A gate around MOSFET includes multiple fins, a first sidewall gate structure formed adjacent one of the fins, a second sidewall gate structure formed adjacent another one of the fins, a top gate structure formed on one or more of the fins, and a bottom gate structure formed under one or more of the fins.

Abstract: By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.

Abstract: A differential receiver circuit. In one embodiment, the circuit includes first and second input transistors, each having a first terminal coupled to a bias node (a first and second bias node, respectively), as well as first and second bias transistors, each having a first terminal coupled to the first and second bias nodes, respectively. The circuit further includes a first current source coupled to provide current to the first bias node and a second current source coupled to the second bias node. The differential receiver circuit is coupled to first and second, which receive first and second voltages, respectively. The first and second current sources provide current to the first and second bias nodes, respectively, such that the voltage present on the first and second bias nodes remains with approximately a threshold voltage of a midpoint between the voltages present on the first and second voltage nodes.

Abstract: The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.

Abstract: A method for fabricating sidewall spacers in the manufacture of an integrated circuit device is disclosed. A dielectric spacer layer is formed over the semiconductor substrate. The dielectric spacer layer is etched prior to forming a layer subsequent to the dielectric layer, to form an L-shaped spacer. In another embodiment, a structure is formed on a substrate, the structure having a sidewall portion that is substantially orthogonal to a surface of the substrate. A dielectric layer is formed over the substrate. A spacer is formed over a portion of the dielectric layer and adjacent to the sidewall portion of the structure, wherein at least a portion of the dielectric layer over the substrate without an overlying oxide spacer is an unprotected portion of the dielectric. At least a part of the unprotected portion of the dielectric layer is removed. An intermediate source-drain region can be formed beneath a portion of the L-shaped spacer by controlling the thickness and/or the source drain doping levels.

Abstract: In one embodiment, a processing node includes a plurality of processor cores each including a cache memory coupled to a cache monitor unit and to a configuration unit. Each cache monitor unit may be configured to independently monitor a current utilization of the cache memory to which it is coupled and to determine whether the current utilization is below a predetermined utilization value. The configuration unit may selectably disable one or more portions of the cache memory in response to the cache monitor unit determining that the current utilization is below the predetermined utilization value.

Abstract: A phase alignment circuit having a phase selection circuit, a synchronizer, and a counter form a feedback loop for aligning a local clock signal with a received reference clock of a synchronous communications system. The phase selection circuit is configured for outputting the local clock signal as a phase-adjusted local clock having a selected phase based on a phase selection value specified by the counter. The synchronizer is configured for digitally sampling the received reference clock relative to the phase-adjusted local clock, and outputting a digital phase bit identifying whether the phase-adjusted local clock has a later phase relative to the received reference clock. The counter selectively increments or decrements a counted value based on the digital phase bit, and outputs to the phase selection circuit a prescribed number of most significant bits from the counted value as the phase selection value.

Abstract: A method includes identifying a queue of workpiece lots awaiting processing in a process tool. At least one of the workpiece lots is associated with an obsolete control thread for controlling the process tool. Each of the plurality of workpiece lots is modeled as a parent lot and a child lot. A completion time for the workpiece lots is optimized by selecting a processing order of the workpiece lots and designating one of the child lots associated with the obsolete control thread as a pilot lot. A first workpiece lot in the selected processing order is processed in the process tool.

Abstract: An interrupt processing technique is provided where an interrupt message is sent to an interrupt controller of a processor in response to an interrupt request from an individual device. The interrupt message comprises a memory address and interrupt status information. The memory address is specifically allocated to the device that has issued the interrupt request. The interrupt status information indicates an interrupt status of the device. An interrupt table that is stored in the memory is updated by the interrupt controller using the interrupt status information comprised in the interrupt message. The interrupt table holds device specific interrupt statuses. Updating the interrupt table comprises addressing the memory using the memory address in the interrupt message.

Abstract: A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a source region formed on the insulating layer adjacent a first end of the conductive fin and a drain region formed on the insulating layer adjacent a second end of the conductive fin. The semiconductor device may further include a metal gate formed on the insulating layer adjacent the conductive fin in a channel region of the semiconductor device.

Abstract: An address decoder. The address decoder includes a plurality of decoder circuits. Each decoder circuit includes a first stage including a first logic circuit having n?1 inputs, the n?1 inputs being a subset of n inputs conveyed to each decoder circuit. Each decoder circuit further includes a second stage having a second and third logic circuits. Both the second and third logic circuits receive an output provided by the first logic circuit. The second logic circuit also receives the other one of the n bits, while the third logic circuit receives its complement. The second and third logic circuits provide second and third outputs, respectively. The address decoder is configured to assert one of a plurality of address selection outputs by asserting one of the second or third outputs of one of the decoder circuits, while de-asserting both the second or third outputs of the other decoder circuits.

Abstract: An integrated circuit is provided including forming a porous ultra-low dielectric constant dielectric layer over a semiconductor substrate and forming an opening in the ultra-low dielectric constant dielectric layer. A dielectric liner is formed to line the opening to cover the pores in the ultra-low dielectric constant dielectric layer and a barrier layer is deposited to line the dielectric liner and conductor core is deposited to fill the opening over the barrier layer.

Abstract: An integrated circuit lid fixture and methods of using the same are provided. In one aspect, an integrated circuit lid fixture is provided that includes a base that has a plurality of pillars. Each of the plurality of pillars has a surface for supporting a substrate that may be removably seated thereon. The surfaces of the plurality of pillars have a first footprint at least as large as a footprint of the substrates to be placed thereon. A plate is provided for applying a compressive force to an integrated circuit lid positioned on any of the substrates removably seated on the pillars.

Abstract: A method for coupling a lid to a support substrate having a semiconductor chip coupled thereto and a clamp fixture. Each semiconductor component has a semiconductor chip mounted to a semiconductor component and a lid coupled to the support substrate via a lid attach material. The lid attach material is cured either using a two-step process that includes a partial cure step followed by a clampless cure step or by curing the die attach material in a clamp fixture without including a pre-cure step. The semiconductor component manufacture decides on the curing approach based on cost and the number of semiconductor components being manufactured. If the semiconductor manufacturer opts for curing with a clamp fixture, the clamp fixture includes a base plate insert on which the semiconductor components are placed and a compression mechanism that includes a compression plate having a compressive material disposed thereon.

Abstract: An integrated device (e.g., an integrated PCI bridge device), having configuration registers for storing configuration values, device logic for generating internal state values based on the configuration values, and a JTAG interface configured for receiving a serial input stream and outputting a serial output stream, further includes write logic and debug read logic. The write logic is configured for writing selected portions of the serial input stream into respective selected ones of the configuration registers, based on a detected input indicating a JTAG-based override. The debug read logic is configured, in response to a detected debug mode, for outputting selected internal state values for the serial output stream, based on selection values from the serial input stream and having been stored in a prescribed at least one of the selected configuration registers.

Abstract: A voltage controlled delay line (VCDL). The VCDL includes one or more cells. Each of the one or more cells includes two or more inputs and an output. Each of the one or more cells is configured to provide a delay as well as an interpolation function and a multiplexer function. The VCDL may be used to provide delay in a delay locked loop (DLL).

Abstract: A structure interfaces dual polycrystalline silicon layers. The structure includes a first layer of polycrystalline silicon and a metal interface layer formed on a surface of the first layer of polycrystalline silicon. The structure further includes a second layer of polycrystalline silicon formed on a surface of the interface layer.

Abstract: In one embodiment, a system comprises a first processor core and a second processor core. The first processor core is configured to communicate an address range indication identifying an address range that the first processor core is monitoring for an update. The first processor core is configured to communicate the address range indication responsive to executing a first instruction defined to cause the first processor core to monitor the address range. Coupled to receive the address range indication, the second processor core is configured, responsive to executing a store operation that updates at least one byte in the address range, to signal the first processing core. Coupled to receive the signal from the second processor core, the first processor core is configured to exit a first state in which the first processor core is awaiting the update in the address range responsive to the signal.