Abstract: An even number phase ring oscillator having at least eight, equally spaced phases. The oscillator includes at least eight stages, defining at least four pairs of stages, with each pair including a first stage and an associated second stage. The first stages are arranged such that an output of a first stage defines a primary input of another first stage, with the output of the first stage of the last pair defining the primary input of the second stage of the first pair. The second stages are arranged such that an output of a second stage defines a primary input of an another second stage, with the output of the second stage of the last pair crossing over the output of the first stage of the last pair and defining a primary input of the first stage of the first pair, thereby defining a closed loop.

Abstract: The present invention provides a method and apparatus for multivariate fault identification and classification. The method includes accessing data indicative of a plurality of physical parameters associated with a plurality of processed semiconductor wafers and providing at least one summary report including information indicative of at least one univariate representation of the accessed data and at least one multivariate representation of the accessed data.

Abstract: A channel adapter includes a link receive resource configured for initiating packet validation upon detecting a receive counter reaching a prescribed threshold corresponding to reception of an initial header of a data packet. Upon initiating packet validation, the link receive resource determines whether the initial header includes any errors. Any errors detected in the initial header are stored if the errors are detected prior to reception of an end of the data packet. Additional validation operations can be initiated upon reception of the respective headers. Upon receiving the end of the data packet, the link receive resource selectively reports the errors detected in the initial header based on whether any higher-priority error is detected relative to a prescribed error reporting order.

Abstract: A WLAN (Wireless Local Area Network) receiver is provided that has a power normalization unit that receives an input signal having a signal power within a given power range. The power normalization unit outputs a signal that is derived from the input signal by applying one of at least two different power normalization functions to the input signal. The power normalization unit comprises a power determination unit for determining the signal power, and a function selection unit for determining one of at least two subranges of the power range. The determined subrange includes the signal power. The function selection unit is further arranged for selecting one of the power normalization functions dependent on the determined subrange. By subdividing the power range and applying power normalization functions dependent on the respective subrange, simplified circuitry may be used by avoiding the calculation of the reciprocal square root function.

Abstract: Methods and apparatus are provided for use in testing a memory (230) coupled to a processing node (214). A background scrubber (316) in the processing node (214) is initialized to perform a test of the memory (230). A status of the background scrubber (316) is checked in which the status indicates whether an error occurred during the test. A predetermined action is taken in response to the status indicating that the error occurred during the test.

Abstract: Methods are disclosed for forming dual stressed layers in such a way that both undercutting and an undesirable residual spacer of the first-deposited stressed layer are prevented. In one embodiment, a method includes forming a first stressed silicon nitride layer over the NFET and the PFET, forming a sacrificial layer over the first stressed silicon nitride layer such that the sacrificial layer is thinner over substantially vertical surfaces than over substantially horizontal surfaces, forming a mask over a first one of the NFET and the PFET, removing the first stressed silicon nitride layer over a second one of the NFET and the PFET, and forming a second stressed silicon nitride layer over the second one of the NFET and the PFET. The sacrificial layer prevents undercutting and forming of an undesirable residual spacer during removal of the first-deposited stressed layer.

Abstract: A method and apparatus are provided for determining the health of a desired node in a multi-level system. The method includes defining a first fault model associated with a first node of a first level of the system, defining a second fault model associated with a second node of a second level of the system, and defining a third fault model associated with a third node associated with a third level of the system. The method further includes determining a health value associated with at least one of the first node, the second node, and the third node of the system based on at least one of the first fault model, second fault model, and the third fault model.

Abstract: An apparatus and method is disclosed for updating a status register in an out of order execution pipeline. In one embodiment a dispatch unit in a floating point unit sets a MRI bit flag that indicates that an instruction is the most recently issued instruction. The dispatch unit resets the MRI bit flag for all other instructions. Each execution stage of the execution pipeline keeps track of the MRI bit flag information for the instruction. A writeback unit updates the status register after the execution of the instruction that has its MRI bit flag set. The writeback unit does not update the status register for instructions that have their MRI bit flag reset. This allows the instruction to be identified that is the most recent instruction to enter the dispatch unit.

Abstract: An improved decision feedback equalization technique is provided that may be used in data communications receivers such as those in WLAN (Wireless Local Area Network) systems. The decision feedback equalizer comprises a feedforward filter that is connected to receive an input data signal and output a filter representation thereof. The feedforward filter has a filter characteristic that depends on filter coefficient data. The decision feedback equalizer further comprises a filter coefficient computation unit for generating the filter coefficient data and outputting the generated data to the feedforward filter. At least one data processing circuit is provided that receives a mode switch signal for switching its operational mode. The data processing circuit is arranged for performing a feedforward filter function in one operational mode and a filter coefficient computation function in another operational mode.

Abstract: A circuit for a parity tree is disclosed. In one embodiment, a circuit for a parity tree includes a pull-up circuit, a pull-down circuit, and a cross-couple circuit. The circuit, an XOR/XNOR circuit, includes both an output node and an inverted output node. For a given set of input signals, a pull-up path exists through the cross-couple circuit for one of the output node and the inverted output node, and wherein a pull-down path exists through the cross-couple circuit for the other one of the output node and the inverted output node.

Abstract: A variable speed floating point unit comprising: 1) an execution pipeline comprising a plurality of execution stages capable of executing floating point operations in a series of sequential steps; and 2) a clock controller capable of receiving an input clock signal and generating a variable speed output clock signal capable of clocking the execution pipeline. The clock controller adjusts a speed of the variable speed output clock signal according to a level of queued opcodes waiting to be executed in the execution pipeline.

Abstract: A gate structure is formed overlying a substrate. A source/drain region of the substrate is exposed to a soluction comprising ammonium hydroxide, hydrogen peroxide, and deionized water to etch an upper-most semiconductor porton of the source/drain region.

Abstract: Multiple logic cores of integrated circuits and processors may be configured to operate at frequencies and voltages independently of each other. Additionally, other components, such as a common bridge configured to interface with the logic cores, may operate at a voltage and frequency independent of the voltage and frequency at which the logic cores are operating. The operating frequency and/or voltage of a logic core may be independently adjusted for various reasons, including power management and temperature control. Logic circuitry at an interface between the controller and the logic cores may translate logic signals from one voltage and/or frequency to another to enable communication between the bridge and the logic core when the two are operating at different voltages and/or frequencies.

Abstract: An image analyser analyses regions of an image. An image scaler may then scale the image adaptively, in dependence on the nature of region of the image being scaled. In one embodiment, adjacent pixels are analysed to determine their frequency content. This frequency analysis provides an indication of whether the pixels likely contain hard edges, discontinuities or variations typical of computer generated graphics. As a result of the analysis, the type of scaling suited for scaling the image portion containing the pixels may be assessed. Adjacent pixels having high frequency components may be scaled by a scaling circuit that introduces limited ringing. Adjacent pixels having lower frequency components may be scaled using a higher-order multi-tap scaler. Resulting scaled pixels may be formed as a blended combination of the two different scaling techniques.

Abstract: An edge enhancer for enhancing edges within a video image, forms an edge enhancement signal of odd harmonics of a sinusoid representative of the edge content in an incoming signal. The edge enhancement signal may be added to a version of the incoming signal, thereby sharpening the edge in the incoming signal. This allows edges to be enhanced, increasing the image's rise-time without adding overshoot. Sharper edges are thus produced in much the same way as a square wave may be formed of odd harmonics of a sinusoid.

Abstract: A method of forming a silicon-on-insulator substrate is disclosed, including providing a silicon substrate; depositing a first insulation layer over the silicon substrate; forming a conductive layer over the first insulation layer to a first structure; providing a second structure comprising a silicon device layer and a second insulation layer; bonding the first structure and the second structure together so that the conductive layer is located between the first and second insulation layers; and removing a portion of the silicon device layer thereby providing the silicon-on-insulator substrate having two discrete insulation layers. In one embodiment, the method further includes forming at least one conductive plug through the silicon substrate and the first insulation layer and/or the second insulation layer so as to contact the conductive layer. Methods of facilitating heat removal from the device layer are disclosed.

Abstract: A memory device may include a number of memory cells, a first interlayer dielectric formed over the memory cells and at least one metal layer formed over the interlayer dielectric. A dielectric layer may be formed over the metal layer. The dielectric layer may represent a cap layer formed at or near an upper surface of the memory device and may be deposited at a relatively low temperature.

Abstract: A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The liner for the trench is formed from a semiconductor or metal layer which is formed in a selective epitaxial growth (SEG) process. The SEG process can be a CVD or MBE process. Capping layers can be used above the strained silicon layer.

Abstract: A semiconductor structure comprising a first transistor element and a second transistor element is provided. Stress in channel regions of the first and the second transistor element is controlled by forming stressed layers having a predetermined stress over the transistors. The stressed layers may be used as etch stop layers in the formation of contact vias through an interlayer dielectric formed over the transistors.

Abstract: A die seal arrangement and method for making the same negatively biases the die edge seal of a die by connecting the die edge seal to a source of negative electrical potential, with respect to electrical ground. The die edge seal, made of copper, for example, has its oxidation reaction potential shifted to a region which is energetically unfavorable. This significantly retards or eliminates oxidation of the copper die edge seal at circuit operation temperature, thereby maintain the integrity and functionality of the die edge seal to protect active circuitry on the die, even when the die edge seal is exposed to moisture and air.