Abstract: A wireless computer system (30) is formed to have a host section (31) and a wireless hardware section (40). A first portion of a transmission frame is formed in system memory (36) of a host section (31) and a second portion of the transmission frame is formed in the wireless hardware section (40). The wireless hardware section (40) begins transmitting the first transmission frame portion while downloading the second transmission frame portion from the system memory (36) into the wireless hardware section (40).

Abstract: A method and system for providing an external locking mechanism for memory locations. The memory includes a first plurality of storage locations configured with BIOS data and a second plurality of storage locations. The second plurality of storage locations includes a first plurality of blocks readable only in SMM and a second plurality of blocks readable in SMM and at least one operating mode other than SMM. The computer system includes a bus, a memory coupled to the bus, and a device coupled to access the memory over the bus. The memory includes a plurality of storage locations, divided into a plurality of memory units. The device includes one or more locks configured to control access to one or more of the plurality of memory units.

Abstract: Diamond like carbon silicon on insulator substrates and methods of fabrication thereof are disclosed. In one form, a process for creating a composite structure for fabricating an electronic device is disclosed. The process includes forming a first diamond-like carbon layer on a substrate and coupling a support layer to the diamond-like carbon layer. The substrate is reduced to provide a device layer for fabricating a microelectronic device.

Abstract: Polysilicon lines are formed, featuring an upper portion extending beyond the lower portion that defines the required CD. Accordingly, metal silicide layers of increased dimensions can be formed on the upper portion of the polysilicon lines so that the resulting gate structures exhibit a very low final sheet resistance. Moreover, in situ sidewall spacers are realized during the process for forming the polysilicon lines and without additional steps and/or costs.

Abstract: A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer formed on a silicon germanium (SiGe) layer. A trench extends through the Si layer into the SiGe layer, and sidewall spacers are employed that cover the entirety of the sidewalls within the trench in the SiGe layer. Following STI fill, polish and nitride stripping process steps, further processing can be performed without concern of the SiGe layer being exposed to a silicide formation process.

Abstract: A method for using a personal computer memory card international association (PCMCIA) controller to communicate with an Integrated Drive Electronics (IDE) drive which includes performing a transfer between the static random access memory (SRAM) controller and the IDE drive using PCMCIA interface signals to communicate with the IDE drive and a general purpose input/output signal to communicate with an interrupt request of the IDE drive.

Abstract: By using sidewall spacers adjacent to a gate electrode structure both as an epitaxial growth mask and an implantation mask, the complexity of a conventional process flow for forming raised drain and source regions may be significantly reduced, thereby reducing production costs and enhancing yield by lowering the defect rate.

Abstract: A system and method is provided for monitoring and controlling the contaminant particle count contained in an aerosol during a photoresist coating and/or development process of a semiconductor. The monitoring system monitors the contaminate particle count present in the environment of the photoresist coating and/or development process, such as in a process chamber or a cup, enclosing the wafer during the process. The present invention employs in situ laser scattering or laser doppler anemometry techniques to detect the particle count level in the chamber or cup. A plurality of lasers and detectors can be positioned at different heights in or outside of a chamber or cup to facilitate detecting particles at different height levels. A laser could be used in conjunction with mirrors to provide a similar measurement. The particle count level can be used to compare with the defect level, so that it can be determined if a cleaner environment and/or process should be implemented.

Abstract: An integrated circuit is coupled to a communication link and to a separate signal line and includes programmable registers specifying communication link width and frequency. The integrated circuit responds to a change in the value of the signal line by changing the width and/or frequency of at least a portion of the communication link to the programmed value in response to a change in a logical value of the signal line, without the integrated circuit entering a reset state. The width and/or frequency may be changed during a POST routine or during system operation as part of a power management or other system function while maintaining its operational state.

Abstract: A method of manufacturing an integrated circuit (IC) can utilizes semiconductor substrate configured in accordance with a trench process. The substrate utilizes trenches in a base layer to induce stress in a layer. The substrate can include silicon. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer.

Abstract: Various methods of fabricating halo regions are disclosed. In one aspect, a method of manufacturing is provided that includes forming a symmetric transistor gate and an asymmetric transistor gate on a substrate. The symmetric and asymmetric transistor gates are substantially perpendicular. A mask is formed on the substrate with a first opening and a second opening. The first opening is sized to enable implantation of first and second halo regions beneath the symmetric transistor gate. The second opening is sized to enable implantation of a third halo region beneath and on one but not both sides of the asymmetric gate. The first and second halo regions are formed beneath the first gate by implanting through the first opening toward opposite sides of the symmetric gate. The third halo region is formed beneath and proximate one but not both sides of the asymmetric transistor gate by implanting through the second opening.

Abstract: Systems and methods are disclosed that facilitate predicting electromigration (EM) reliability in semiconductor wafers via decoupling intrinsic and extrinsic components of EM reliability. Electrical cross-sections of wafer test lines can be determined and individual currents can be forced through the test lines to force a constant current density across a test wafer. An EM reliability test can be performed to determine a purely intrinsic component of EM reliability. A single current can then be applied to all test lines and a second EM reliability test can be performed to determine total EM reliability. Standard deviations, or sigma, of failure distributions can be derived for each EM test. Intrinsic sigma can be subtracted from total sigma to yield an extrinsic sigma associated with process variation in wafer fabrication. Sigmas can then be utilized to predict EM reliability when process variations are adjusted, without application of a damaging package-level EM test.

Abstract: A system is configured to selectively block peripheral accesses to system memory. The system includes a secure execution mode (SEM)-capable processor configured to operate in a trusted execution mode. The system also includes a system memory including a plurality of addressable locations. The system further includes a memory controller that may determine a source of an access request to one or more of the plurality of locations of the system memory. The memory controller may further allow the access request to proceed in response to determining that the source of the access request is the SEM-capable processor.

Abstract: A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.

Abstract: An integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over the gate dielectric. A sidewall spacer is formed around the gate and a source/drain junction is formed in the semiconductor substrate using the sidewall spacer. A bottom silicide metal is deposited on the source/drain junction and then a top silicide metal is deposited on the bottom silicide metal. The bottom and top silicide metals are formed into their suicides. A dielectric layer is deposited above the semiconductor substrate and a contact is formed in the dielectric layer to the top silicide.

Abstract: A network switch that controls the communication of data frames between stations includes receive devices that correspond to ports on the network switch. The receive devices receive and store data frame information from the network stations. The network switch also includes an external memory interface that receives the data frame information from the receive devices and transfers the data frame information to multiple external memory devices.

Abstract: A domain power notification system detects when a power domain experiences a power condition, such as lost power and low-voltage power, and communicates that information to the domains that communicate with the problem domain. As a result, the effected domains stop communicating with the problem domain without passing erroneous information.

Abstract: A system for presenting tester information is provided, including providing test data of a first parameter and generating a first type of visualization of the first parameter and presenting the first type of visualization of the first parameter. The system includes generating a second type of visualization of the first parameter in response to the presenting of the first type of visualization of the first parameter and presenting the second type of visualization of the first parameter.

Abstract: A method for Chemical-Mechanical Polishing utilizes a two step process. The first step utilizes a slurry with abrasive particles which become embedded into a conditioned polishing pad having small cavities in the surface. During the second step the slurry flow is discontinued and the final polishing is performed using the embedded small abrasive particles. Using this method dishing has been reduced considerably, and has enabled the fabrication of a Damascene metal gate NMOSFET fabricated with Atomic Layer Deposition (ALD).

Abstract: A processing system comprising: i) a processor core; ii) a memory; iii) a plurality of peripheral devices; and iv) a communication bus coupled to the processor core, the memory and the peripheral devices for transferring bus transactions between the processor core, the memory, and the peripheral devices. The communication bus comprises a bus controller for receiving memory access request data associated with a first memory access to a first location in the memory by a first one of the peripheral devices and transferring the received memory access request data to at least one memory address pin used to access the memory.