Abstract: The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.

Abstract: A method of removing the cap from a gate of an embedded SiGe semiconductor device includes the formation of the embedded SiGe semiconductor device with the cap consisting of a cap material on top of the gate, first sidewall spacers on side surfaces of the gate, and embedded SiGe in source and drain regions. Second sidewall spacers are formed on the first sidewall spacers, these second sidewall spacers consisting of a material different from the cap material. The cap is stripped from the top of the gate with an etchant that selectively etches the cap material and not the second sidewall spacer material.

Abstract: Cassettes for holding thin semiconductor wafers for safe handling are provided, along with an improved methodology for reducing the thickness of semiconductor wafers. Embodiments include a cassette for holding thin semiconductor wafers, having a plurality of sets of center and edge supports, the sets being spaced from each other a distance greater than a sag amount of the wafers. The thin wafers are supported in a predetermined reference plane, so that tools such as robots or automatic handlers can be programmed to pick them up without damaging them. In another embodiment, a double into single pitch wafer cassette is provided having a wafer entrance section with spacing twice as large between sets of edge supports as a conventional cassette, to accommodate the sag/warp of the thin wafers, and a “flattening section” which guides and flattens the wafers between opposing edge supports as they are pushed into the cassette, such that the wafers are held substantially planar.

Abstract: Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.

Abstract: Electromigration and stress migration of Cu interconnects are significantly reduced by forming a composite capping layer comprising a layer of tantalum nitride on the upper surface of the inlaid Cu and a layer of ?-Ta on the titanium nitride layer. Embodiments include forming a recess in an upper surface of an upper surface of Cu inlaid in a dielectric layer, depositing a layer of titanium nitride of a thickness of 20 ? to 100 ? and then depositing a layer of ?-Ta at a thickness of 200 ? to 500 ?.

Abstract: The present invention is generally directed to various methods and systems for calibrating degradable components using process state data. In one illustrative embodiment, the method includes providing a tool comprised of at least one process chamber, providing at least one process state sensor that is adapted to obtain process state data regarding at least one characteristic of a process environment established in the chamber in performance of a process operation, operatively coupling at least one of a new or repaired degradable component to the tool, and calibrating the new or repaired degradable component based upon the process state data. In further embodiments, the method comprises processing a plurality of additional workpieces in the tool after the new or repaired degradable components have been calibrated using process state data in accordance with one aspect of the present invention.

Abstract: A data processing system (100, 600) has a memory hierarchy including a cache (124, 624) and a lower-level memory system (170, 650). A data element having a special write with inject attribute is received from a data producer (160, 640), such as an Ethernet controller. The data element is forwarded to the cache (124, 624) without accessing the lower-level memory system (170, 650). Subsequently at least one cache line containing the data element is updated in the cache (124, 624).

Abstract: For determining a failure characteristic of a semiconductor device, a leakage current characteristic is measured for the semiconductor device to determine a plurality of stress bias zones. A respective set of parameters that define a respective failure characteristic of the semiconductor device is determined for each of the stress bias zones such that the failure characteristic is accurately determined for a wide range of operating voltages.

Abstract: The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.

Abstract: An integrated circuit includes a dual mode output driver configured for outputting an output signal according to either a high voltage mode or a low voltage mode, and a controller for controlling the dual mode output driver at the selected mode. The dual mode output driver includes a high-voltage pull-up/pull-down driver circuit and a low-voltage pull-up/pull-down driver circuit, the low-voltage pull-down transistor in series with the high-voltage pull-down transistor that is coupled to the output node. Protection circuitry prevents the low-voltage transistors from encountering an overvoltage condition during the high voltage mode, and controls the slew rate of the output signal during the low voltage mode.

Abstract: A system and method for processing tester information is provided having a system-under-test. A pattern is written to the system-under-test, and a pattern is read therefrom. The pattern written is then compared to the pattern read from the system-under-test. The signal from the comparison is processed, and the signal from the signal processing is then analyzed.

Abstract: In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to estimate the status of one or more consumables in a CMP system.

Abstract: A network device that controls the communication of data frames between stations includes ports that receive data frames from the stations and transmit the data frames. A number of the ports may be configured as a trunk and at least one of the ports in the trunk may be configured to transmit data frames at a higher speed than the other ports. The network device further includes data frame processing logic that identifies ports on which to transmit the received data frames. The data frame processing logic also determines whether the identified port is part of the trunk. When the port is part of the trunk, the data frame processing logic determines an appropriate port on which to transmit the data frame. The data frame processing logic may determine the appropriate port based on the priority associated with the received data frame so that higher priority data frames are transmitted on higher speed ports.

Abstract: A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A transition metal layer is formed on the source/drain junctions and on the gate. An interlayer dielectric is formed above the semiconductor substrate. Contacts are then formed in the interlayer dielectric, whereby a silicide is formed from the transition metal layer at a temperature no higher than the maximum temperature at which the interlayer dielectric and the contacts are formed.

Abstract: The anisotropic etch process for forming circuit elements such as a gate electrode is accomplished by using a hard mask instead of a resist feature, thereby avoiding a complex resist trim process when critical dimensions are required, which are well below the resolution of the involved photolithography. Moreover, the critical dimension may be adjusted by means of a deposition process rather than by a resist trim process.

Abstract: An electrostatic discharge protection network comprising electrostatic discharge (ESD) clamp devices distributed between turns of a coil shaped inductor. The inductance of the coil shaped inductor and parasitic capacitance of the ESD clamp devices form a low pass filter structure having a very high cut-off frequency. Below the low pass filter cutoff frequency, the capacitive influence of the ESD clamp devices are cancelled by the series inductance of the coil shaped inductor. The turns of the coil shaped inductor may be fabricated on insulation layers proximate to one another so as to achieve close magnetic coupling there between, thereby achieving a larger inductance value for a given sized coil structure. Improved input and output impedance matching is also achieved by adjusting the inductive and capacitive components of the low pass filter structure formed by the coil shaped inductor and capacitance of the ESD clamp devices.

Abstract: Integration schemes are presented which provide for decoupling the placement of deep source/drain (S/D) implants with respect to a selective epitaxial growth (SEG) raised S/D region, as well as decoupling silicide placement relative to a raised S/D feature. These integration schemes may be combined in multiple ways to permit independent control of the placement of these features for optimizing device performance. The methodology utilizes multiple spacers to decrease current crowding effects in devices due to proximity effects between LDD and deep S/D regions in reduced architecture devices.

Abstract: A double gate germanium metal-oxide semiconductor field-effect transistor (MOSFET) includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, and a second gate formed adjacent a second side of the germanium fin opposite the first side. A triple gate MOSFET includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, a second gate formed adjacent a second side of the germanium fin opposite the first side, and a top gate formed on top of the germanium fin. An all-around gate MOSFET includes a germanium fin, a first sidewall gate structure formed adjacent a first side of the germanium fin, a second sidewall gate structure formed adjacent a second side of the germanium fin, and additional gate structures formed on and around the germanium fin.

Abstract: A system and method are provided to facilitate dual damascene interconnect integration in a single imprint step. The method provides for creation of a translucent imprint mold with three-dimensional features comprising the dual damascene pattern to be imprinted. The imprint mold is brought into contact with a photopolymerizable organosilicon imaging layer deposited upon a transfer layer which is spin coated or otherwise deposited upon a dielectric layer of a substrate. When the photopolymerizable layer is exposed to a source of illumination, it cures with a structure matching the dual damascene pattern of the imprint mold. A halogen breakthrough etch followed by oxygen transfer etch transfer the vias from the imaging layer into the transfer layer. A second halogen breakthrough etch followed by a second oxygen transfer etch transfer the trenches from the imaging layer into the transfer layer. A dielectric etch transfers the pattern from the transfer layer into the dielectric layer.

Abstract: A method for communicating a Physical Layer (PHY) mean square error (MSE) to an upper layer device driver includes: receiving a frame by the PHY; computing a MSE for the frame by the PHY; sending the MSE and the frame to a Media Access Control (MAC); inserting the MSE into a frame status frame (FSF) associated with the frame by the MAC; and sending the frame and the FSF to the upper layer driver software. With access to the PHY MSE, the upper layer driver software can compute the average mean square error (AMSE) and determine if a change in the payload encoding (PE), or data transmission rate, should be negotiated. In this manner, the data transmission rate can be optimized while maintaining a low error rate.