Abstract: A method of forming a fin field effect transistor includes forming a fin and forming a source region on a first end of the fin and a drain region on a second end of the fin. The method further includes forming a dummy gate with a first semi-conducting material in a first pattern over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the first semi-conducting material to leave a trench in the dielectric layer corresponding to the first pattern, thinning a portion of the fin exposed within the trench, and forming a metal gate within the trench.

Abstract: The present invention is generally directed to various methods of controlling exposure processes by monitoring photon levels, and various systems for accomplishing same. In one embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, counting a number of photons incident on at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the counted number of photons.

Abstract: In one embodiment, a method for selecting transistor threshold voltages on an integrated circuit may include assigning a first threshold voltage to selected groups of transistors such as cell instances, for example, and determining which of the selected groups of transistors to assign a second threshold voltage, that is lower than the first threshold voltage, by iteratively performing a cost/benefit analysis. The method may further include determining which of the selected groups of transistors having a third threshold voltage to assign the first threshold voltage by iteratively performing a cost/benefit analysis. The cost/benefit analysis may include calculating a cost/benefit ratio for each group of the selected groups of transistors. In addition, the cost/benefit analysis may include calculating an upcone benefit and a downcone benefit for groups of transistors coupled to one or more inputs and outputs, respectively.

Abstract: The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is complete, an inspection can be performed on the reticle to determine whether any parameters during fabrication and/or any data points are outside of acceptable tolerances. The data is collected and fed into an algorithm (e.g. data-mining algorithm) utilized to determine which fabrication parameters need to be modified then sends the data to a control system (e.g. advanced process control) to facilitate needed changes to the fabrication parameters.

Abstract: Systems and methods are described for controlling critical dimension (CD) variation at the bottom of a tapered contact via on a semiconductor substrate. The invention monitors contact vias on a wafer to detect variations in CD at the top of the via in order to facilitate selective alteration of etching component ratios in an etching process, which permits adjustment of the slope of the tapered contact vias. In this manner, the invention compensates for top CD variations to maintain desired CD at the bottom of tapered vias within a target tolerance on subsequent wafers in a wafer fabrication environment.

Abstract: A phase error correction technique in data communication receivers such as WLAN (Wireless Local Area Network) receivers is provided. A signal having a phase error is received, and a phase error correction mechanism having a loop structure is operated on the input signal to correct the phase error. The corrected signal still has a residual phase error. The residual phase error is then compensated taking into account a loop time delay of the loop structure. Further, a phase change rate may be taken into account, and a smoothing process may additionally be performed.

Abstract: A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.

Abstract: A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at least some pinholes that are present in the lowermost PECVD layer are closed by upper PECVD layers and therefore do not extend through all of the PECVD layers. As a result the upper surface of the uppermost PECVD layer has a lower pinhole density than the lower PECVD layer. This reduces photoresist poisoning by dopant in the amorphous carbon layer, and etching of the amorphous carbon layer by photoresist stripping chemistry.

Abstract: There is disclosed a bus interface unit for transferring machine specific register (MSR) requests between a plurality of bus devices. The bus interface unit comprises: 1) a plurality of input ports for receiving incoming MSR requests from the plurality of bus devices; 2) a plurality of output ports for transmitting data to the plurality of bus devices; and 3) a controller for reading N routing associated with a first received MSR request and comparing a first identification (ID) value in a predetermined M-bit field in the N routing bits to a first designated value. The controller, in response to a determination that the first ID value does not equal the first designated value: 1) realigns the N routing bits such that remaining ones of the N-M bits outside the predetermined M-bit field are moved into the predetermined M-bit field and 2) transmits the realigned N routing bits via a first one of the plurality of output ports identified by the first ID value.

Abstract: During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behavior in view of electromigration of the metal line may be obtained, thereby increasing device reliability.

Abstract: An OFDM transceiver has a transmitter, a receiver, and a loopback switch. The loopback switch configured is for selectively establishing a physical connection between an output terminal of the transmitter and an input terminal of the receiver. The transmitter is configured for outputting to the output terminal an OFDM signal generated based on a local oscillator signal. The receiver is configured for demodulating the OFDM signal, received via the physical connection, using the local oscillator signal and determining amplitude and phase imbalance parameters based on performing frequency-domain estimation of amplitude and phase imbalances. Hence, the receiver is configured for performing imbalance compensation on a received wireless OFDM signal based on the determined amplitude and phase imbalance parameters. Hence, amplitude and phase imbalances can be estimated accurately despite channel fading and frequency variations encountered between the transmitter of the wireless OFDM signal and the receiver.

Abstract: A complementary code decoder technique is provided where the encoded input data is first parallelized. From the parallelized data, correlation values are generated by a correlator circuit that is capable of changing its correlation characteristics depending on at least one control signal. Different control signals are sequentially provided to the correlator circuit thereby driving the correlator circuit to sequentially generate multiple correlation values from the parallelized data, based on different correlation characteristics. From the multiple correlation values, the correlation value that represents the optimum correlation is identified. This technique significantly reduces the gate count of the decoder structure, thus saving chip area and manufacturing costs.

Abstract: An automatic gain controller for transceiver elements uses a digital topology to achieve an efficient and rapid gain settling so that an output signal of the variable gain section is within a predefined range. In one embodiment, an input signal is periodically sampled and latched so as represent the gain excess of a variable gain section. An accumulator, including an adder having saturation characteristics and a latch as a feedback element, creates a number for a new gain setting so that the variable gain section may adapt to the new gain setting within one clock period. In one example, a gain range of 84 dB is controllable and settling is achieved within 3 clock periods at most.

Abstract: A method and arrangement for reducing the series resistance of the source and drain in a MOSFET device provides for epitaxially grown regions on top of the source and drain extensions to cover portions of the top surfaces of the silicide regions formed on the substrate. The epitaxial material provides an extra flow path for current to flow through to the silicide from the extension, as well as increasing the surface area between the source/drain and the silicide to reduce the contact resistance between the source/drain and the silicide.

Abstract: Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.

Abstract: A method and apparatus for autopolling physical layer (PHY) devices in a network is controlled by information contained in a plurality of poll registers. A user independently defines the PHY addresses and register numbers for a plurality of external PHY registers and provides these to the poll registers. In each poll register, an enable bit is provided for each of the selected PHY registers. When a host CPU sets one of the enable bits, the poll logic reads the corresponding PHY register and stores the result in a corresponding poll data register. One poll data register is provided for each poll register. Thereafter, at each polling interval, the poll logic compares the current contents of the selected PHY register with the contents of the corresponding poll data register. If a change is detected, an interrupt is set in an interrupt register, which causes an interrupt to the host CPU.

Abstract: A method for offsetting silicide on a semiconductor device having a polysilicon gate electrode, source and drain regions in a substrate, and source and drain extensions in the substrate, employs a titanium nitride sidewall spacer on the sidewalls of the polysilicon gate electrode. The titanium nitride sidewall spacer prevents silicide growth on top of the source and drain extensions during a salicidation process. The titanium nitride sidewall spacers are then removed by an etching process that does not etch the silicide regions formed in the source and drain regions and the polysilicon gate electrode. Following removal of the titanium nitride sidewall spacers, a low k interlevel dielectric layer or a stress liner may be deposited on top of the devices to enhance device performance.

Abstract: An interrupt handling technique is provided that may allow for sharing level sensitive interrupts in systems where interrupts are message based, i.e., edge triggered. An interrupt input unit is provided for receiving level sensitive interrupt requests and generating request occurrence signals therefrom. An edge detection unit generates start signals for edge triggered interrupt messages on the basis of the request occurrence signals. An interrupt termination detection unit receives termination signals each indicating that an interrupt routine relating to a previous edge triggered interrupt message has terminated. The interrupt input unit is controlled to output a request occurrence signal in response to a received termination signal if a previously received level sensitive interrupt request is still active. That is, a second edge triggered interrupt message may be generated.

Abstract: An integrated circuit includes a first temperature sensing device providing an indication of a sensed temperature, a correlation oscillator circuit positioned adjacent to the first temperature sensing device, a plurality of other oscillator circuits, and storage locations storing calibration factors associated with at least the first temperature sensing device and the plurality of other oscillator circuits. A temperature calculation circuit determines temperatures of various locations in the integrated circuit. Each of the temperatures is determined according to an oscillation frequency of a respective one of the other oscillators, the oscillation frequency of the correlation ring oscillator, the temperature of the first temperature sensing device, and one or more stored calibration factors.

Abstract: A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.