Abstract: A method for reducing an effective lateral resistance of a buried layer in an IC includes forming first and second circuit sections in a common substrate, the second circuit section being spaced laterally from the first circuit section. The method further includes forming an isolation buried layer in the substrate under at least a portion of the first circuit section and forming a conductive layer on a surface of the substrate, the conductive layer overlaying at least a portion of the first circuit section. A plurality of conductive plugs are formed in the substrate for operatively connecting the isolation buried layer to the conductive layer, whereby an effective lateral resistance of the isolation buried layer is reduced.

Abstract: A method of manufacturing a laterally diffused metal oxide semiconductor (LDMOS) device, and an integrated circuit associated therewith. The method includes forming a lightly-doped source/drain region with a first dopant, the lightly-doped source/drain region located between first and second isolation structures. The method further includes creating a gate over the lightly-doped source/drain region. In one advantageous embodiment of the present invention, the method further includes diffusing a second dopant at least partially across the lightly-doped source/drain region and under the gate to form a first portion of a channel.

Abstract: According to one embodiment, during mixing of an N-channel input signal to generate an M-channel output signal, in at least one frequency sub-band, magnitude equalization is applied to the mixed channel signals such that an amplitude sum magnitude for the N input channels (e.g., the magnitude of a sum of estimated amplitudes of the N input channels) is approximately equal to an amplitude sum magnitude for the M output channels (e.g., the magnitude of a sum of estimated amplitudes of the M output channels). In one implementation, magnitude equalization is applied to one or more sub-bands (e.g., those below 1 kHz), and power equalization is applied to one or more other sub-bands (e.g., those above 1 kHz) to reduce coloration effects in the output signal.

Abstract: An integrated circuit (IC) having a link layer that (1) simultaneously receives both hardware debug data from on-chip ASIC logic and software debug data from an on-chip programmable processor and (2) serializes the hardware and software debug data streams to generate one or more serialized debug data streams, e.g., containing both hardware and software debug data, for output to off-chip debug testing equipment to support debug testing of both the ASIC logic and the programmable processor. Cross triggering can be implemented on-chip to support simultaneous display of correlated hardware and software debug information on appropriate monitors. The present invention supports debug testing using external debug testing equipment that does not require a hardware logic analyzer.

Abstract: A wideband amplifier having an amplifier input terminal and an amplifier output terminal includes at least one transistor coupled to the amplifier input terminal and an impedance element coupled between the amplifier input terminal and the amplifier output terminal. A feedback signal is transmitted between the amplifier output terminal and the amplifier input terminal by way of the impedance element wherein the feedback signal varies in accordance with changes in an impedance of the impedance element so as to peak a frequency response of the amplifier.

Abstract: A communications circuit can operate with a data channel and a control channel. A changeable portion of the circuit can be reconfigurable between a first mode associated with activity on the control channel only and a second mode associated with activity on both the data channel and the control channel. The first mode can be selected to reduce power consumption compared to the second mode. Controller circuitry is provided to sense signals associated with the control channel and to switch the changeable portion between the first and second modes.

Abstract: An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) device and a method of manufacture therefor. The method of manufacturing the LDMOS device includes forming an amorphous region in a semiconductor substrate between isolation structures and adjacent a gate structure, by implanting an amorphizing element, such as silicon or germanium, in the semiconductor substrate. The method further includes diffusing a channel dopant laterally in the amorphous region, to form a first portion of a channel.

Abstract: An interleaver employs a generalized method of generating a mapping. The mapping is generated for interleaving bits of a data block and associated error detection/correction information. The data block is of length N, and the length of the error detection/correction information is P. An (N+P)×(N+P) square matrix is formed and divided into sub-blocks, where one portion of the matrix is associated with error detection/correction information and another portion is associated with data of the data block. New positions in the matrix are generated in a time sequence on a sub-block by sub-block basis based on a generator seed pair and an original position seed pair. The time sequence also corresponds to positions in an output interleaved block. Once the new position sequence is generated, the matrix is populated with data and error detection/correction information based on the corresponding time sequence. A de-interleaver performs the inverse mapping of the interleaver.

Abstract: A dual loop, clock synchronization circuit for a receiver in a communication system. The circuitry uses a first loop of a digital phase lock loop for coarse synchronization to time stamps within the received data and uses a second loop for fine synchronization of a second numerically controlled oscillator.

Abstract: A wireless network processing device, such as a user device or an access point device, comprises multiple radios preferably configured in parallel and coupled to a common controller. One of the radios of the processing device is designated as a master radio and one or more of the remaining radios are designated as slave radios. The processing device is configured such that in a particular mode of operation the master radio only transmits data and the one or more slave radios only receive data, or the master radio only receives data and the one or more slave radios only transmit data.

Abstract: The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide optimum matching. According to the invention, the capacitor pairs are interdigitated in a manner that ensures that the plates of each pair occupy common area on the substrate. Structural anomalies due to process conditions are compensated in that a given anomaly affects both capacitors in the same way. Two of the capacitor plates, one in each pair, are formed of comb structures, with the fingers of the combs interdigitated. The other plates are formed using one or more plates interleaved between the interdigitated plates.

Abstract: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.

Abstract: A process and an architecture related to a vertical MOSFET device and a capacitor for use in integrated circuits. Generally, the integrated circuit structure includes a semiconductor layer with a major surface formed along a plane thereof and further including a first doped region formed in the surface. A second doped region of a different conductivity type than the first doped region is positioned over the first region. A third doped region of a different conductivity type than the second region is positioned over the second region. In one embodiment of the invention, a semiconductor device includes a first layer of semiconductor material and a first field-effect transistor having a first source/drain region formed in the first layer. A channel region of the transistor is formed over the first layer and an associated second source/drain region is formed over the channel region. The integrated circuit further includes a capacitor having a bottom plate, dielectric layer and a top capacitor plate.

Abstract: The present invention provides an integrated circuit and method of manufacture therefore. The integrated circuit, in one embodiment, includes heat conducting elements located proximate a plurality of heat generating components located over a substrate. The integrated circuit may further include a heat radiating element comprising one or more fins in thermal communication and physical contact with the heat conducting elements, the heat radiating element configured to dissipate heat generated by the heat generating components away from the integrated circuit.

Abstract: A method of minimizing SID difference of simultaneously transmitted cells in two or more data communication lines is provided. A data transmission speed of each of the two or more data communication lines is identified. A fullness threshold of at least one buffer of two or more buffers in a transmit node is configured in relation to a size of a data cell for transmission. The two or more buffers correspond to respective ones of the two or more data communication lines. The at least one buffer communicates with a given one of the two or more data communication lines having a data transmission speed slower than another of the two or more data communication lines. One or more data cells for transmission are assigned to the two or more buffers of the two or more data communication lines at the transmit node. The one or more data cells are transmitted from the transmit node to a receive node in accordance with the data transmission speeds of the two or more data communication lines.

Abstract: In a communication system transmitter, a baseband processor is configured for coupling via an upconverter to an input of a power amplifier of the transmitter. The baseband processor comprises a crest factor reduction element implementing an adaptive peak windowing algorithm for application to an input signal, the adaptive peak windowing algorithm comprising a function that is adaptively adjustable for reducing interference among different peaks of the input signal.

Abstract: The specification describes a lidded MCM IC plastic overmolded package with a chimney-type heat sink. The lid is mechanically decoupled from the chimneys by a compliant conductive polymer plug.

Abstract: A row line driver circuit for use in a memory array including multiple memory cells and multiple row lines coupled to the memory cells for selectively accessing the memory cells includes an output stage adapted for connection to a corresponding one of the row lines and a control circuit connected to the output stage. The output stage is operative during an active phase of a given memory cycle to drive the corresponding row line to a potential as a function of at least one address signal received by the driver circuit. The control circuit is operative to generate at least one control signal for disabling the output stage at least during an inactive phase of the memory cycle to thereby substantially eliminate a leakage current path in the driver circuit.