Abstract: A sampling circuit includes an input voltage source; a first switch having an input operatively connected to the input voltage source; a sampling capacitor operatively connected to an output of the first switch; an operational amplifier having an inverting input operatively connected to the sampling capacitor; a second switch operatively connected across the inverting input of the operational amplifier and an output of the operational amplifier; and a second capacitor operatively connected to the output of the first switch. The first switch has a variable parasitic capacitance, and the second capacitor has a substantially more linear capacitance than the variable parasitic capacitance and is in parallel with the variable parasitic capacitance. A combined variable parasitic capacitance and capacitance of said switch capacitor is more linear than the variable parasitic capacitance of the first switch.

Abstract: Devices, such as mobile devices, may be exposed, to short circuit and output overload events. To protect against such events, mobile devices typically include current limit circuits. Some current limit circuits may involve user programmable function. User programmable function may need accurate current limit detectors. One approach to improving resolution and accuracy of current limit detectors using a single resistive device is to magnify the operating current range. Various embodiments of the present invention include devices and methods for detecting pre-programmed current limits.

Abstract: A DC/DC voltage converter includes an inductive switching voltage regulator and a capacitive charge pump connected in series between the input and output terminals of the converter. The charge pump has a second input terminal connected to the input terminal of the converter. This reduces the series resistance in the current path by which charge is transferred from the capacitor in the charge pump to the output capacitor and thereby improves the ability of the converter to respond to rapid changes in current required by the load.

Abstract: A buck-boost switching regulator includes two buck switches and two boost switches. Two ramp voltages VY and VY are generated. The voltage VY is compared to a voltage VEA1 that is proportional to the output of the switching regulator. This defines the duty cycle of the two buck switches. The voltage VX is compared to a voltage VEA2 that is inversely proportional to the output of the switching regulator. This defines the duty cycle of the two boost switches. The regulator seamlessly transitions between Buck, Boost and Buck-Boost modes depending on input and output conditions.

Abstract: A switched capacitor circuit includes a first level-crossing detector to generate a level-crossing detection signal when an input signal crosses a first predetermined level. A first waveform generator generates a first predetermined waveform and a second waveform generator generates a second predetermined waveform. A second level-crossing detector generates a second level-crossing detection signal when said second predetermined waveform crosses a voltage reference level a second time. A second switch is coupled to the second level-crossing detector, and a third switch is coupled to the first level-crossing detector. The second switch turns OFF when the second level-crossing detection signal indicates the second predetermined waveform crossed the voltage reference level a second time. The third switch turns OFF when the first level-crossing detection signal indicates the input signal crossed the first predetermined level.

Abstract: A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa.

Abstract: A sampled-data analog circuit uses zero-crossing detector. A waveform generator produces a plurality of segments of ramp at the output. An output of a zero crossing detector controls a sampling switch, thereby causing a precise sample of the output voltage to be taken at the instant the zero crossing detector senses the zero crossing of the input signal. The waveform generator further includes a output hold function to maintain the output voltage.

Abstract: The oscillation circuit includes an output current mirror, a P-N complementary current mirror, a P-type current mirror and an N-type current mirror. The P-N complementary current mirror has the same structure as the output current mirror but has current that is only 1/k times the current of the output current mirror, wherein k is greater than 1. The P-type current mirror connects to the P-N complementary current mirror, and has current that is m times the current of the P-N complementary current mirror, where m is greater than 1. The N-type current mirror has one end connected to the P-type current mirror and another end connected to the output current mirror. The N-type current mirror has current that is n times the current of the P-type current mirror, where m × n k ? 1 , and n is greater than 1.

Abstract: A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a Buck converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of the DC/DC converter to an input terminal in the post-regulator stage. The pre-converter steps the input DC voltage up or down by a positive or negative integral or fractional value, and the post-regulator steps the voltage down by a variable amount depending on the duty factor at which the post-regulator is driven. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.

Abstract: The power transistor circuit with high-voltage endurance includes a first power transistor, a second power transistor and an enabling circuit. The first power transistor includes a first voltage endurance and a first inner resistance, while the second power transistor includes a second voltage endurance and a second inner resistance. The first voltage endurance and the first inner resistance are smaller than the second voltage endurance and the second inner resistance, respectively. The drain of the second power transistor is connected to the drain of the first power transistor and the enabling circuit. The enabling circuit enables the second power transistor first, and when the drain voltage of the first power transistor is smaller than the first endurance, the enabling circuit then enables the first power transistor.

Abstract: A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate terminals, respectively, of the sense MOSFET. The drain voltages of the main and sense MOSFETs are equalized, in one embodiment by using a variable current source and negative feedback. The gate width of the main MOSFET is typically larger than the gate width of the sense MOSFET. Using the size ratio of the gate widths, the current in the main MOSFET is measured by sensing the magnitude of the current in the sense MOSFET. Inserting the relatively large MOSFET in the power circuit minimizes power loss.

Abstract: A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa.

Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

Abstract: An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.

Abstract: An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.

Abstract: An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.

Abstract: A sampled-data analog circuit includes a level-crossing detector. The level-crossing detector controls sampling switches to provide a precise sample of the output voltage when the level-crossing detector senses the predetermined level crossing of the input signal. The level-crossing detection may be a zero-crossing detection. An optional common-mode feedback circuit can keep the output common-mode voltage substantially constant.

Abstract: A freewheeling MOSFET is connected in parallel with the inductor in a switched DC/DC converter. When the freewheeling MOSFET is turned on during the switching operation of the converter, while the low-side and energy transfer MOSFETs are turned off, the inductor current circulates or “freewheels” through the freewheeling MOSFET. The frequency of the converter is thereby made independent of the lengths of the magnetizing and energy transfer stages, allowing far greater flexibility in operating and converter and overcoming numerous problems associated with conventional DC/DC converters. For example, the converter may operate in either step-up or step-down mode and may even transition for one mode to the other as the values of the input voltage and desired output voltage vary.

Abstract: The circuit for detecting the maximal frequency of the pulse frequency modulation includes an oscillator-controlling unit, a delay circuit and a master-slave register. The oscillator-controlling unit is connected to an oscillator, which generates the pulse frequency modulation signals, and includes a first-half pulse-generating module and a second-half pulse-generating module. The delay circuit is connected to the second-half pulse-generating module. The master-slave register includes a clock, an input end and an output end, wherein the input end is connected to the oscillator-controlling unit, and the clock is connected to the delay circuit.

Abstract: A sampled-data analog circuit includes a level-crossing detector. The level-crossing detector controls sampling switches to provide a precise sample of the output voltage when the level-crossing detector senses the predetermined level crossing of the input signal. The level-crossing detection may be a zero-crossing detection. An optional common-mode feedback circuit can keep the output common-mode voltage substantially constant.