Patents Assigned to Applied Material
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Publication number: 20230019912Abstract: A virtual build of an assembly may be performed by operating a virtual build tool inside of an active session of design software that is configured to design an assembly having multiple individual parts; importing characteristics of the assembly from a three-dimensional (3D) model of the assembly that is maintained by the design software; receiving an input of sequence numbers that indicate an assembly order for the individual parts; generating images for the individual parts as they are incrementally added to the assembly based on the sequence numbers; and generating a set of build instructions based on the sequence numbers and the images for the individual parts, where the set of build instructions illustrate how to physically manufacture the assembly.Type: ApplicationFiled: July 13, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventor: Pradeep Dayananda S
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Publication number: 20230013095Abstract: Techniques for adjusting the shape of an ion beam are described. Characteristics of a desired beam shape may be defined. The ion beam generator may include beam shaping elements associated with tunable parameters that can be set in combination with each other. A search space for the possible combinations is defined. A set of exploratory points in the search space are measured and used to interpolate a large number of interpolated points based on a regression model. Interpolated points that are associated with low confidence values may be measured. Based on the measured and interpolated points, clusters of tunable parameter combinations may be identified for evaluation. The clusters are evaluated for stability and sensitivity, and one of the clusters is selected based on the evaluation. The ion beam generator may be configured based on the selected cluster.Type: ApplicationFiled: July 14, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Richard Allen Sprenkle, Richard White, Eric Donald Wilson, Shane Conley, Ana Samolov, Nilay A. Pradhan
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Publication number: 20230014586Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a doped semiconductor material between source regions and drain regions of the device. The method includes doping semiconductor material layers between source regions and drain regions of an electronic device.Type: ApplicationFiled: September 29, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Benjamin Colombeau, Hans-Joachim Gossmann
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Publication number: 20230017035Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.Type: ApplicationFiled: June 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Bencherki Mebarki, Thai Cheng Chua, Christian W. Valencia, Joung Joo Lee, Xianmin Tang, Xiao Chen
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Publication number: 20230015080Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.Type: ApplicationFiled: July 15, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Rohan Puligoru Reddy, Xiaolin C. Chen, Zhenjiang Cui, Anchuan Wang
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Publication number: 20230015613Abstract: Gas distribution assemblies and process chambers comprising gas distribution assemblies are described. The gas distribution assembly includes a gas distribution plate, a lid and a primary O-ring. The primary O-ring is positioned between a purge channel of a first contact surface of the gas distribution plate and a second contact surface. Methods of sealing a process chamber using the disclosed gas distribution assemblies are also described.Type: ApplicationFiled: September 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed
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Publication number: 20230017577Abstract: Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.Type: ApplicationFiled: September 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Ashutosh Agarwal, Sanjeev Baluja
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Patent number: 11556117Abstract: A method of detecting and classifying anomalies during semiconductor processing includes executing a wafer recipe a semiconductor processing system to process a semiconductor wafer; monitoring sensor outputs from a sensors that monitor conditions associated with the semiconductor processing system; providing the sensor outputs to models trained to identify when the conditions associated with the semiconductor processing system indicate a fault in the semiconductor wafer; receiving an indication of a fault from at least one of the models; and generating a fault output in response to receiving the indication of the fault.Type: GrantFiled: October 21, 2019Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Shahab Arabshahi, Michael Nichols
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Patent number: 11557509Abstract: A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.Type: GrantFiled: November 21, 2019Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventor: Suketu Arun Parikh
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Patent number: 11557496Abstract: A cassette with embedded temperature sensors that is disposed within a load lock is disclosed. The temperature sensors may be disposed in a plurality of shelves of the load lock cassette to monitor the temperature of each of a plurality of workpieces disposed in the load lock. The output of these temperature sensors may be provided to a controller, which controls when the load lock is opened. The load lock cassette may also include cooling channels to accelerate the cooling of the workpieces to improve throughput. The cooling may be controlled using closed loop control, where a controller monitors the temperature of the workpieces during the cooling operation.Type: GrantFiled: March 23, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Michael Blanchard, Steven M. Anella, Brant S. Binns, Jordan B. Tye, D. Jeffrey Lischer
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Patent number: 11557466Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.Type: GrantFiled: August 14, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Samuel E. Gottheim, Abhijit B. Mallick, Pramit Manna, Eswaranand Venkatasubramanian, Timothy Joseph Franklin, Edward Haywood, Stephen C. Garner, Adam Fischbach
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Patent number: 11557473Abstract: A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.Type: GrantFiled: April 16, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Wen Xiao, Vibhu Jindal, Sanjay Bhat
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Patent number: 11557501Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.Type: GrantFiled: June 15, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Kaushal Gangakhedkar, Kallol Bera, Joseph Yudovsky
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Patent number: 11557478Abstract: Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.Type: GrantFiled: October 14, 2021Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Eswaranand Venkatasubramanian, Pramit Manna, Abhijit B. Mallick, Srinivas Gandikota
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Patent number: 11557464Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.Type: GrantFiled: June 3, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Laksheswar Kalita, Son Nguyen, Dmitry Lubomirsky, Kenneth D. Schatz
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Patent number: 11555250Abstract: A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.Type: GrantFiled: April 27, 2021Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Yuanhong Guo, Sheng Michael Guo, Marek W Radko, Steven Victor Sansoni, Nagendra Madiwal, Matvey Farber, Pingping Gou, Song-Moon Suh, Jeffrey C. Hudgens, Yuji Murayama, Anurag Bansal, Shaofeng Chen, Michael Kuchar
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Patent number: 11556053Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.Type: GrantFiled: January 25, 2021Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
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Patent number: 11557048Abstract: A system for obtaining a measurement representative of a thickness of a layer on a substrate includes a support to hold a substrate, an optical assembly to capture two color images with light impinging the substrate at different angles of incidence, and a controller. The controller is configured to store a function that provides a value representative of a thickness as a function of position along a predetermined path in a coordinate space of at least four dimensions. For a pixel in the two color images, the controller determines a coordinate in the coordinate space from the color data, determines a position of a point on the predetermined path that is closest to the coordinate, and calculates a value representative of a thickness from the function and the position of the point on the predetermined path.Type: GrantFiled: April 18, 2019Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Dominic J. Benvegnu, Boguslaw A. Swedek
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Patent number: 11557515Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a plurality of patterning structures over a device layer, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface, and forming a mask by depositing a masking material at a non-zero angle of inclination relative to a perpendicular to a plane defined by a top surface of the device layer. The mask may be formed over the plurality of patterning structures without being formed along the second sidewall. The method may further include selectively forming a metal layer along the second sidewall of each of the plurality of patterning structures.Type: GrantFiled: August 10, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventor: Sony Varghese
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Patent number: 11557500Abstract: Embodiments of the present disclosure provide a heated support pedestal including a body comprising a ceramic material, a support arm extending radially outward from a periphery of the body that is coupled to a shaft, and a vacuum conduit disposed within the shaft and through the body to connect with a surface of the body.Type: GrantFiled: September 19, 2018Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventor: Vijay D. Parkhe