Patents Assigned to Applied Material
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Publication number: 20220396857Abstract: Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.Type: ApplicationFiled: June 9, 2021Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Joseph F. Behnke, Joseph Frederick Sommers, Sumit Agarwal
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Publication number: 20220399225Abstract: Disclosed are approaches for forming semiconductor device cavities using directional dielectric deposition. One method may include providing a plurality of semiconductor structures and a plurality of trenches of a semiconductor device, and forming a dielectric atop the plurality of semiconductor structures by delivering a dielectric material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the plurality of semiconductor structures. The dielectric may be further formed by delivering the dielectric material at a second non-zero angle of inclination relative to the normal extending perpendicular from the top surface of the plurality of semiconductor structures.Type: ApplicationFiled: June 15, 2021Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Armin Saeedi Vahdat, Tristan Y. Ma, Johannes M. van Meer, John Hautala, Naushad K. Variam
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Publication number: 20220399479Abstract: Methods of making high-pixel-density LED structures are described. The methods may include forming a backplane substrate and a LED substrate. The backplane substrate and the LED substrate may be bonded together, and the bonded substrates may include an array of LED pixels. Each of the LED pixels may include a group of isolated subpixels. A quantum dot layer may be formed on at least one of the isolated subpixels in each of the LED pixels. The methods may further include repairing at least one defective LED pixel by forming a replacement quantum dot layer on a quantum-dot-layer-free subpixel in the defective LED pixel. The methods may also include forming a UV barrier layer on the array of LED pixels after the repairing of the at least one defective LED pixel.Type: ApplicationFiled: June 11, 2021Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Lisong Xu, Mingwei Zhu, Byung Sung Kwak, Hyunsung Bang, Liang Zhao, Hou T. Ng, Sivapackia Ganapathiappan, Nag Patibandla
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Publication number: 20220399457Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.Type: ApplicationFiled: August 16, 2022Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Steven C.H. Hung, Benjamin Colombeau, Andy Lo, Byeong Chan Lee, Johanes F. Swenberg, Theresa Kramer Guarini, Malcolm J. Bevan
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Publication number: 20220396732Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.Type: ApplicationFiled: June 9, 2022Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Nitin Deepak, Tapash Chakraborty, Prerna Sonthalia Goradia, Visweswaren Sivaramakrishnan, Nilesh Chimanrao Bagul, Bahubali S. Upadhye
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Patent number: 11527732Abstract: Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.Type: GrantFiled: May 31, 2022Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Chung-Chia Chen, Yu-Hsin Lin, Jungmin Lee, Takuji Kato, Dieter Haas, Si Kyoung Kim, Ji Young Choung
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Patent number: 11527429Abstract: An electrostatic chuck includes a ceramic body and adapter objects. The adapter objects collectively form a plurality of openings distributed over a bottom surface of the ceramic body at different distances from a center of a circle defined by the bottom surface of the ceramic body.Type: GrantFiled: February 25, 2019Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventor: Vijay D. Parkhe
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Patent number: 11524384Abstract: Embodiments of the present disclosure provide for abrasive delivery (AD) polishing pads and manufacturing methods thereof. In one embodiment, a method of forming a polishing article includes forming a sub-polishing element from a first curable resin precursor composition and forming a plurality of polishing elements extending from the sub-polishing element. Forming the plurality of polishing elements includes forming a continuous polymer phase from a second curable resin precursor composition and forming a plurality of discontinuous abrasive delivery features disposed within the continuous polymer phase. The sub-polishing element is formed by dispensing a first plurality of droplets of the first curable resin precursor composition. The plurality polishing elements are formed by dispensing a second plurality of droplets of the second curable resin precursor composition.Type: GrantFiled: July 30, 2018Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Ashwin Chockalingam, Rajeev Bajaj, Ashavani Kumar, Daniel Redfield
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Patent number: 11524392Abstract: Embodiments described herein provide for devices and methods for retaining optical devices. The devices and methods described herein provide for retention of the substrate without contacting sensitive portions of the substrate. The devices and methods utilize retention pads or vacuum pins to contact the exclusion zones i.e., inactive areas of the substrate to retain the substrate and prevent the substrate from moving laterally. Additionally, a holding force retains the substrate in the vertical direction, without contacting the substrate. The methods provide for adjusting the devices to account for multiple geometries of the substrate. The methods further provide for adjusting the devices, such as adjusting a gap between the optical device and a suction pad, to alter the holding force of the devices on the optical devices.Type: GrantFiled: April 22, 2021Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Yaseer Arafath Ahamed, Kangkang Wang, Benjamin B. Riordon, James D. Strassner, Ludovic Godet
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Patent number: 11527637Abstract: Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, forming an oxide layer over the device structure including within each of the plurality of trenches and over a top surface of the device structure, and implanting a first portion of the oxide layer using an ion implant delivered to the device structure at a non-zero angle of inclination relative to a perpendicular extending from a top surface of the device structure. The method may further include removing the oxide layer from the top surface of the device structure and from a sidewall of each of the plurality of trenches, wherein a second portion of the oxide layer remains along a bottom of each of the plurality of trenches.Type: GrantFiled: March 1, 2021Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Qintao Zhang, Samphy Hong
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Patent number: 11527408Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.Type: GrantFiled: May 5, 2020Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Tzu-shun Yang, Rui Cheng, Karthik Janakiraman, Zubin Huang, Diwakar Kedlaya, Meenakshi Gupta, Srinivas Guggilla, Yung-chen Lin, Hidetaka Oshio, Chao Li, Gene Lee
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Patent number: 11524455Abstract: A dispensing system for an additive manufacturing includes a powder reservoir that contains powder to form an object, and an array of nozzles positioned at a base of the powder reservoir over a top surface of a platen where the object is to be formed. The powder flows from the powder reservoir through the nozzles to the top surface. A respective powder wheel in each nozzle controls a flow rate of the powder. Each wheel has multiple troughs on surface of the wheel. When a motor rotates the wheel, the troughs transport the powder through the nozzle. The rotation speed of the wheel controls the flow rate. For solid parts of the object, the wheel rotates and allows the powder to be deposited on the top surface. For empty parts of the object, the wheel remains stationary to prevent the powder from flowing to the surface.Type: GrantFiled: November 25, 2019Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Raanan Zehavi, Hou T. Ng, Nag B. Patibandla, Ajey M. Joshi
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Patent number: 11527424Abstract: Disclosed herein are systems and methods relating to a transfer chamber for an electronic device processing system. The transfer chamber can include a first magnetic levitation track having a face-up orientation and a second magnetic levitation track spaced from the first magnetic levitation track and having a face-down orientation. The system can include substrate carriers that move along the first and second magnetic levitation tracks where each substrate carrier includes a magnet on a bottom portion to interact with a first magnetic field and a second magnet on a top portion to interact with a second magnetic field. The system also can include at least one lift pin assembly to move the substrate carriers in a vertical direction between the first and second magnetic levitation tracks.Type: GrantFiled: March 20, 2020Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Alex Berger, Jeffrey Hudgens, Eric Englhardt
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Patent number: 11524382Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.Type: GrantFiled: March 28, 2019Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Kun Xu, Denis Ivanov, Harry Q. Lee, Jun Qian
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Patent number: 11527407Abstract: Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO2), copper (Cu), and low-k dielectric materials.Type: GrantFiled: March 3, 2020Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Andrea Leoncini
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Patent number: 11527412Abstract: A method for performing an ion implantation process including providing a hardmask layer disposed atop a substrate, providing a photoresist layer disposed atop the hardmask layer and defining a pattern exposing a portion of the hardmask layer, performing a room temperature ion implantation process wherein an ion beam formed of an ionized first dopant species is directed onto the exposed portion of the hardmask layer to make the exposed portion more susceptible to ion etching or wet etching, performing an etching process wherein the exposed portion of the hardmask layer is etched away to expose an underlying portion of the substrate, and performing a high energy, hot ion implantation process wherein an ion beam formed of a ionized second dopant species is directed onto the exposed portion of the substrate.Type: GrantFiled: December 6, 2020Date of Patent: December 13, 2022Assignee: Applied Materials, Inc.Inventors: Qintao Zhang, Samphy Hong, David J. Lee, Felix Levitov, Lei Zhong, Wei Zou
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Publication number: 20220388111Abstract: Exemplary semiconductor processing systems may include a substrate support defining an aperture therethrough. The processing systems may include a light assembly having a light source that emits an optical signal that is directed toward the aperture. The optical signal may have a high angle of incidence relative to the substrate support. The processing systems may include a photodetector aligned with an angle of reflectance of the optical signal.Type: ApplicationFiled: June 3, 2021Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Nojan Motamedi, Dominic J. Benvegnu, Boguslaw A. Swedek
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Publication number: 20220389568Abstract: Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.Type: ApplicationFiled: June 8, 2022Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Subramanian Tamilmani, Srinivas Gandikota, Jianqiu Guo, Luping Li
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Publication number: 20220389580Abstract: Embodiments of this disclosure relate to methods for depositing gapfill materials by a plasma ALD cycle including a plasma deactivation outside of and near the top of the substrate feature. Some embodiments of the disclosure relate to methods for filling reentrant features without void formation. In some embodiments, the gapfill material comprises one or more of silicon nitride and titanium nitride.Type: ApplicationFiled: June 8, 2022Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Hanhong Chen, Joseph AuBuchon, Zhejun Zhang
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Publication number: 20220392804Abstract: A method may include providing a device structure in the semiconductor device. The device structure may include a buried device contact, a first dielectric layer, disposed over the buried device contact; and a device element, where the device element includes a TiN layer. The method may include implanting an ion species into the TiN layer, wherein the ion species comprises a seed material for selective tungsten deposition.Type: ApplicationFiled: June 7, 2021Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Sipeng Gu, Wei Zou
