Patents Assigned to Applied Material
  • Extreme ultraviolet mask absorber materials
    Patent number: 11513437
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal
  • Radiation shield modification for improving substrate temperature uniformity
    Patent number: 11515129
    Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Elizabeth Neville, Satish Radhakrishnan, Kartik Shah, Vinay Prabhakar, Venkata Sharat Chandra Parimi, Sungwon Ha
  • Deposition of silicon boron nitride films
    Patent number: 11515145
    Abstract: Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Chuanxi Yang, Hang Yu, Deenesh Padhi
  • Method of forming gratings
    Patent number: 11512385
    Abstract: Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Joseph C. Olson, Ludovic Godet, Rutger Meyer Timmerman Thijssen, Morgan Evans, Jinxin Fu
  • Semiconductor chamber components with high-performance coating
    Patent number: 11515195
    Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventor: Laksheswar Kalita
  • SYSTEMS AND METHODS FOR MEDICAL PACKAGING
    Publication number: 20220372620
    Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.
    Type: Application
    Filed: May 10, 2022
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lance A. Scudder, Sukti Chatterjee, David Masayuki Ishikawa, Yuriy V. Melnik, Vibhas Singh
  • THERMAL DEPOSITION OF SILICON-GERMANIUM
    Publication number: 20220375750
    Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.
    Type: Application
    Filed: May 19, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Huiyuan Wang, Susmit Singha Roy, Abhijit Basu Mallick
  • METHOD TO IMPROVE WAFER EDGE UNIFORMITY
    Publication number: 20220375727
    Abstract: Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The semiconductor processing systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrates support may include a shaft coupled with the support plate. The semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of the support plate. An inner surface of the liner may include an emissivity texture.
    Type: Application
    Filed: May 19, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventor: Mingle Tong
  • SYSTEMS AND METHODS FOR MEDICAL PACKAGING
    Publication number: 20220375723
    Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.
    Type: Application
    Filed: May 10, 2022
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lance A. Scudder, Sukti Chatterjee, David Masayuki Ishikawa, Yuriy V. Melnik, Vibhas Singh
  • LOW IMPEDANCE CURRENT PATH FOR EDGE NON-UNIFORMITY TUNING
    Publication number: 20220375776
    Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.
    Type: Application
    Filed: May 19, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Madhu Santosh Kumar Mutyala, Saketh Pemmasani, Akshay Dhanakshirur, Mayur Govind Kulkarni, Hang Yu, Deenesh Padhi
  • FOURIER FILTERING OF SPECTRAL DATA FOR MEASURING LAYER THICKNESS DURING SUBSTRATE PROCESSING
    Publication number: 20220371152
    Abstract: Determining a thickness of a layer on a wafer during a semiconductor process may include executing the process on the layer on the wafer; monitoring the wafer during the process with an in-situ spectrographic monitoring system to generate spectral data reflected from the wafer; applying a bandpass filter operation to the spectral data to generate filtered spectral data, where the bandpass filter may be configured to pass a frequency range corresponding to the layer on the wafer; and matching the filtered spectral data to a reference filtered spectral data, where the reference filtered spectral data may have been filtered using the bandpass filter operation, and the reference filtered spectral data may be associated with a thickness of the layer.
    Type: Application
    Filed: May 20, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Benjamin Cherian, Dominic J. Benvegnu, Harry Q. Lee
  • Doping Techniques
    Publication number: 20220375753
    Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
    Type: Application
    Filed: August 5, 2022
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
  • METHODS FOR DEPOSITING BLOCKING LAYERS ON CONDUCTIVE SURFACES
    Publication number: 20220372616
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.
    Type: Application
    Filed: May 7, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
  • Flowable CVD Film Defect Reduction
    Publication number: 20220375747
    Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.
    Type: Application
    Filed: May 20, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wenhui Li, Praket P. Jha, Mandar B. Pandit, Man-Ping Cai, Jingmei Liang, Michael Wenyoung Tsiang
  • METHODS, MEDIUMS, AND SYSTEMS FOR IDENTIFYING A GENE IN A FLOURESCENCE IN-SITU HYBRIDIZATION EXPERIMENT
    Publication number: 20220375546
    Abstract: Exemplary embodiments provide methods, mediums, and systems for processing multiplexed image data from a fluorescence in-situ hybridization (FISH) experiment. According to exemplary embodiments, a convolutional neural network (CNN) may be applied to the image data to localize and identify hybridization spots in images corresponding to different sets of targeting probes. The CNN is configured in such a way that it is able to discriminate hybridization spots in situations that are difficult for conventional techniques. The CNN may be trained on a relatively small amount of data by exploiting the nature of the FISH codebook.
    Type: Application
    Filed: May 24, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Mike Jin-An Huang, Yun-Ching Chang, Dan Xie, Kok Hao Chen, Shijie Nigel Chou
  • Catalyst Enhanced Molybdenum Deposition And Gap Fill
    Publication number: 20220372617
    Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.
    Type: Application
    Filed: May 21, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Xi Cen, Kai Wu, Seshadri Ganguli, Xinming Zhang, Norman L. Tam, Abhilash Mayur
  • Multicolor self-aligned contact selective etch
    Patent number: 11508618
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang
  • Method of forming interconnect for semiconductor device
    Patent number: 11508617
    Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Hao Jiang, Chi Lu, He Ren, Chi-I Lang, Ho-yung David Hwang, Mehul Naik
  • Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films
    Patent number: 11508611
    Abstract: Implementations disclosed herein generally provide a lift pin that can improve the deposition rate and uniform film thickness above lift pin areas. In one implementation, the lift pin includes a first end coupling to a shaft, the first end having a pin head, and the pin head having a top surface, wherein the top surface is planar and flat, and a second end coupling to the shaft, the second end having a flared portion, wherein the flared portion has an outer surface extended along a direction that is at an angle of about 110° to about 140° with respect to a longitudinal axis of the lift pin.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Kalyanjit Ghosh, Mayur G. Kulkarni, Sanjeev Baluja, Praket P. Jha, Krishna Nittala
  • Deuterium-containing films
    Patent number: 11508584
    Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Sean M. Seutter, Mun Kyu Park, Hien M Le, Chih-Chiang Chuang