Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

Abstract: A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 ?m over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

Abstract: Disclosed herein are methods for reducing MOSFET trench sidewall surface roughness. In some embodiments, a method includes providing a device structure including a well formed in an epitaxial layer, forming a plurality of trenches through the well and the epitaxial layer, and implanting the device structure to form a treated layer along a sidewall of just an upper portion of the device structure within each of the plurality of trenches. The method may further include etching the device structure to remove the treated layer.

Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

Abstract: A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 ?/min.

Abstract: Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

Abstract: Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

Abstract: Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.

Abstract: An additive manufacturing apparatus includes a platform, a dispenser configured to deliver a plurality of successive layers of feed material onto the platform, at least one energy source to selectively fuse feed material in a layer on the platform, and an air knife assembly. The air knife assembly includes an inlet unit to deliver gas over the platform and an exhaust unit to receive gas from over the platform. The inlet unit includes a multi-chamber plenum, a gas inlet, and a gas distribution module. The multi-chamber plenum has a plurality of vertically stacked chambers that are fluidically connected, with a first chamber of the plurality of vertically stacked chambers positioned at a higher elevation than a collection chamber of the plurality of vertically stacked chambers.

Abstract: A system includes a light emitter attached to a destination chamber, the light emitter to emit a collimated light beam across an entrance to the destination chamber. The system includes an end effector attached to a distal end of an arm of a robot. The system includes a two-dimensional (2D) area sensor disposed on the end effector at a location that coincides with the collimated light beam while the end effector reaches within the destination chamber. The 2D area sensor is to detect a location of the collimated light beam incident on a surface of the 2D area sensor and transmit, to a controller coupled to the robot, sensing data including the location.

Abstract: Methods, systems, and non-transitory computer readable medium are described for automated image measurement for process development and optimization. An example method may include receiving an image of a product associated with a manufacturing process, wherein the product comprises a plurality of structures; identifying, using a trained machine learning model, a segment of the image that comprises a structure of the plurality of structures; determining a plurality of image measurements of the segment that comprises the structure; and storing the plurality of image measurements.

Abstract: A contactless temperature sensor for measuring the temperature of a workpiece is disclosed. The contactless temperature sensor uses a cushion of gas to separate the bottom surface of the workpiece from the top surface of the temperature sensor. The contactless temperature sensor includes a puck having a conduit therethrough. The conduit has a first portion having a first diameter, and a second portion having a second, narrower diameter. A gas tube rests in the first portion of the conduit, disposed proximate the bottom surface of the puck. Since the puck is not affixed to the gas tube, angular compliance may be achieved between the workpiece and the puck. Gas passes through the second portion and to the top surface of the puck. This gas provides a cushion between the top surface of the puck and the underside of the workpiece and conducts heat from the workpiece to the puck.

Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.

Abstract: Disclosed are a slit valve apparatus and a method for controlling a slit valve. The slit valve apparatus includes a slit valve assembly and a servo-control system in communication with the slit valve assembly. The slit valve assembly includes at least one gate able to transition between an open position and a closed position, at least one pneumatic actuator, at least one proportional pneumatic valve including a plurality of controllers, and a continuous position sensor. The servo-control system includes a centralized controller that generates a control signal and adjusts the movement of the at least one gate based on the position trajectory for the gate, a linear position measurement of the gate from the continuous position sensor, and fluid pressure/flow measurements from the plurality of controllers.

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

Abstract: Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Abstract: Disclosed herein are multi-turn drive assemblies, systems and methods of use thereof. The multi-turn drive assemblies enable a robot link member to have a maximum rotation of at least 360 degrees about an axis. The multi-turn drive assemblies can be incorporated into a robot arm for enabling 360 degrees rotation of one or more link members about an axis. The robot arm may be located in a transfer chamber of an electronic device processing system. Also disclosed are methods of controlling the multi-turn drive assemblies and related robots.