Abstract: A method, non-transitory computer readable medium and a computerized system for testing a code using real time analysis. The method can include (i) executing a group of test cases while performing real time analysis to find a set of overlapping code segments (OCSs), input values that are fed, during the executing of the group, to each one of the set of OCSs, and output values that are outputted from each one of the OCSs during the execution of the group, (ii) generating, for at least some of the OCSs, at least one OCS test for testing each of the at least some OCSs, wherein the generating is based, at least in part, on the input values and the output values, (iii) determining an evaluation process of the code that includes executing one or more OCS tests for testing one or more OCSs, (iv) evaluating the code by executing the evaluation process.

Abstract: The present disclosure relates to an apparatus and method that manipulates the voltage at an edge ring relative to a substrate located on a substrate support located within a processing chamber. The apparatus includes a substrate support assembly that has a body having a substrate electrode embedded therein for applying a voltage to a substrate. The body of the substrate support assembly additionally has an edge ring electrode embedded therein for applying a voltage to an edge ring. The apparatus further includes an edge ring voltage control circuit coupled to the edge ring electrode. A substrate voltage control circuit is coupled to the substrate electrode. The edge ring voltage control circuit and the substrate voltage control circuit are independently tunable to generate a difference in voltage between the edge ring voltage and the substrate voltage.

Abstract: Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

Abstract: Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.

Abstract: semiconductor processing chambers include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface and the substrate support may at least partially define a processing region within the chamber. The faceplate may define an inner plurality of apertures. Each of the inner apertures may include a generally cylindrical aperture profile. The faceplate may define an outer plurality of apertures that are positioned radially outward from the inner apertures. Each of the outer apertures may include a conical aperture profile that extends through the second surface.

Abstract: Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrate support may include a shaft coupled with the support plate. The chambers may include a bottom plate coupled with the shaft of the substrate support and extending below a bottom surface of the support plate. The bottom plate may include a first emissivity zone and a second emissivity zone. The first emissivity zone and the second emissivity zone may have different emissivity levels.

Abstract: Exemplary substrate processing systems may include a base. The systems may include a chamber body having a transfer region housing that defines a transfer region. The transfer region housing may include a first portion and a second portion. The systems may include a lid assembly positioned atop the chamber body. The lid assembly may include a lid and a lid stack. The systems may include one or more lift mechanisms that elevate the first portion of the transfer region housing and at least a portion of the lid assembly relative to the base. The first portion and the second portion may mate with one another when the transfer region housing is in an operational configuration. The first portion and the second portion may be separated when the first portion of the transfer region housing is elevated.

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Abstract: Semiconductor processing systems are described to measure levels of atomic oxygen using an atomic oxygen sensor positioned within a substrate processing region of a substrate processing chamber. The processing systems may include a semiconductor chamber that has a chamber body which defines a substrate processing region. The processing chamber may also include a substrate support positioned within the substrate processing region. The atomic oxygen sensor may be positioned proximate to the substrate support in the substrate processing region of the chamber. Also described are semiconductor processing methods that include detecting a concentration of atomic oxygen in the substrate processing region with an atomic oxygen sensor positioned in the semiconductor processing chamber. The atomic oxygen sensor may include at least one electrode comprising a material selectively permeable to atomic oxygen over molecular oxygen, and may further include a solid electrolyte that selectively conducts atomic oxygen ions.

Abstract: A factory interface for an electronic device processing system includes a factory interface chamber, an inert gas supply conduit, an exhaust conduit and an inert gas recirculation system. The inert gas supply conduit supplies an inert gas into the factory interface chamber. The exhaust conduit exhausts the inert gas from the factory interface chamber. The inert gas recirculation system recirculates the inert gas exhausted from the factory interface chamber back into the factory interface chamber.

Abstract: A method includes positioning a robot in a plurality of postures in a substrate processing system relative to a fixed location in the substrate processing system and generating sensor data identifying a fixed location relative to the robot in the plurality of postures. The method further includes determining, based on the sensor data, a plurality of error values corresponding to one or more components of the substrate processing system and causing, based on the plurality of error values, performance of one or more corrective actions associated with the one or more components of the substrate processing system.

Abstract: A method for controlling an avalanche photo diode (APD) and a device that includes a high gain stable APD. The device may include an APD, a compensation circuit that comprises a compensation component that is thermally coupled to the APD, a temperature control module having a part that is thermally coupled to the compensation component and to the APD, and one or more additional components. The APD is formed within a first semiconductor epitaxial layer that is grown on a first side of a substrate, the substrate is highly thermally conductive and electrically insulating.

Abstract: Nanopowders containing nanoparticles having a core particle with a thin film coating. The core particles and thin film coatings are, independently, formed from at least one of a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride or combinations thereof. The thin film coating may be formed using a non-line of sight technique such as atomic layer deposition (ALD). Also disclosed herein are nanoceramic materials formed from the nanopowders and methods of making and using the nanopowders.

Abstract: A method and apparatus for forming a plurality of vias in panels for advanced packaging applications is disclosed, according to one embodiment. A redistribution layer is deposited on a substrate layer. The redistribution layer may be deposited using a spin coating process, a spray coating process, a drop coating process, or lamination. The redistribution layer is then micro-imprinted using a stamp inside a chamber. The redistribution layer and the stamp are then baked inside the chamber. The stamp is removed from the redistribution layer to form a plurality of vias in the redistribution layer. Excess residue built-up on the redistribution layer may be removed using a descumming process. A residual thickness layer disposed between the bottom of each of the plurality of vias and the top of the substrate layer may have thickness of less than about 1 ?m.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.