Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

Abstract: A system includes a radiation source, first and second phased arrays, and a detector. The first and second phased arrays include optical elements, a plurality of ports, waveguides, and phase modulators. The optical elements radiate radiation waves. The waveguides guide radiation from a port of the plurality of ports to the optical elements. Phase modulators adjust phases of the radiation waves. One or both of the first and second phased arrays form a first beam and/or a second beam of radiation directed toward a target structure based on the port coupled to the radiation source. The detector receives radiation scattered by the target structure and generates a measurement signal based on the received radiation.

Abstract: A lithography system comprises an illumination system configured to produce abeam of radiation, a support configured to support a patterning device configured to impart a pattern on the beam, a projection system configured to project the patterned beam onto a substrate, and an alignment system comprising an illuminator. The illuminator comprises an optical fiber, an optical fiber protector (714), an optical fiber support (700) comprising a first support arm assembly configured to support the optical fiber protector, an optical system, and an optical system support comprising a second support arm assembly configured to support the optical system.

Abstract: A treatment tool for reconditioning the top surfaces of a plurality of projections of a substrate support in a lithographic tool. The treatment tool includes a reconditioning surface which is rough relative to smoothed top surfaces of the projections and which reconditioning surface has material harder than that of the material of the top surfaces of the projections. A reconditioning method involves causing an interaction between the reconditioning surface of the treatment tool and the top surfaces of the projections of the substrate support, so as to leave these top surfaces rougher than they were prior to the interaction.

Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.

Abstract: Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck (300) in which a cleaning reticle or substrate (320) is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles (360) in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.

Abstract: A measurement apparatus, including: a tapered optical fiber, the tapered optical fiber having an input to receive radiation and having an output to provide spectrally broadened output radiation toward a measurement target, the tapered optical fiber configured to spectrally broaden the radiation received at the input; and a detector system configured to receive a redirected portion of the output radiation from the measurement target.

Abstract: A method including: subsequent to a first device lithographic step of a device patterning process, measuring a degraded metrology mark on an object and/or a device pattern feature associated with the degraded metrology mark, the degraded metrology mark arising at least in part from the first device lithographic step on the object; and prior to a second device lithographic step of the device patterning process on the object, creating a replacement metrology mark, for use in the patterning process in place of the degraded metrology mark, on the object.

Abstract: A lithographic apparatus is provided. The lithographic apparatus includes a reticle and an electrostatic clamp configured to releasably hold the reticle. The electrostatic clamp includes a first substrate having opposing first and second surfaces, a plurality of burls located on the first surface and configured to contact the reticle, a second substrate having opposing first and second surfaces. The first surface of the second substrate is coupled to the second surface of the first substrate. A plurality of cooling elements are located between the first surface of the second substrate and the second surface of the first substrate. The cooling elements are configured to cause electrons to travel from the second surface of the first substrate to the first surface of the second substrate. Each cooling element is substantially aligned with a respective burl.

Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

Abstract: A system for and method of processing a wafer in which a scan signal is analyzed locally to extract information about alignment, overlay, mark quality, wafer quality, and the like.

Abstract: An inspection apparatus, including: an objective configured to receive diffracted radiation from a metrology target having positive and negative diffraction order radiation; an optical element configured to separate the diffracted radiation into portions separately corresponding to each of a plurality of different values or types of one or more radiation characteristics and separately corresponding to the positive and negative diffraction orders; and a detector system configured to separately and simultaneously measure the portions.

Abstract: An alignment system configured to be substantially insensitive to thermal variations in its system during alignment measurements. The alignment system includes a sensor system, a support structure, a sensing element, a position measurement system, and an athermal interface between the sensing element and the support structure. The sensor system is configured to determine a position of an alignment mark on a substrate and the support structure is configured to support the sensor system. The sensing element is configured to detect an unintentional displacement of the support structure and the position measurement system is configured to measure the unintentional displacement relative to a reference element based on the detected unintentional displacement. The athermal interface is configured to prevent detection of temperature induced displacement of the support structure by the sensing element.

Abstract: A flat wire coil lacking electrically insulating material on its upper and/or lower surfaces. The lack of insulating material aids in maintaining the coil temperature as well as providing other benefits.

Abstract: An optical inspection apparatus, including: an optical metrology tool configured to measure structures, the optical metrology tool including: an electromagnetic (EM) radiation source configured to direct a beam of EM radiation along an EM radiation path; and an adaptive optical system disposed in a portion of the EM radiation path and configured to adjust a shape of a wave front of the beam of EM radiation, the adaptive optical system including: a first aspherical optical element; a second aspherical optical element adjacent the first aspherical optical element; and an actuator configured to cause relative movement between the first optical element and the second optical element in a direction different from a beam axis of the portion of the EM radiation path.

Abstract: Methods and systems are described for cleaning a support such as a clamp of a chuck that holds a patterning device or a wafer in a lithographic apparatus. The method includes loading a electrostatic cleaning substrate into a lithographic apparatus. The electrostatic cleaning substrate includes at least one electrode. The method further includes bringing the electrostatic cleaning substrate near to the clamping surface to be cleaned and connecting the electrode to a voltage source. Particles present on the support are then transferred to the electrostatic cleaning substrate.

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

Abstract: An inspection apparatus or lithographic apparatus includes an optical system and a detector. The optical system includes a non-linear prismatic optic. The optical system is configured to receive zeroth and first diffraction order beams reflected from a diffraction target and separate first and second polarizations of each diffraction order beam. The detector is configured to simultaneously detect first and second polarizations of each of the zeroth and first diffraction order beams. Based on the detected first and second polarizations of one or more diffraction orders, an operational parameter of a lithographic apparatus can be adjusted to improve accuracy or precision in the lithographic apparatus. The optical system can include a plurality of non-linear prismatic optics. For example, the optical system can include a plurality of Wollaston prisms.

Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.