Abstract: An improved method of wafer inspection is disclosed. The improved method includes a non-transitory computer-readable medium storing a set of instructions that are executable by at least one processor of a device to cause the device to perform a method comprising: placing the wafer at a location on a stage; moving one or more movable segments of a conductive ring inward in a radial direction to enable the conductive ring to be within a predetermined distance from an edge of the wafer; and adjusting a voltage applied to the conductive ring or to a voltage applied to the wafer so that to enable the voltage applied to the conductive ring to be substantially equal to the voltage applied to the wafer to provide a substantially consistent electric field across an inner portion of the conductive ring and an outer portion of the wafer.

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

Abstract: Systems, methods, and computer programs for providing a force opposed to inertial forces present on a patterning device during imaging operations of a photolithographic system include a means for providing coarse positioning of a pusher in combination with a short-stroke actuator and pushing tip configured to engage an edge of the patterning device. In an embodiment, the coarse positioning is provided by providing a guide along which the short-stroke actuator may be translated, and a locking mechanism is configured to selectively hold the actuator in place relative to the patterning device. In an embodiment, the coarse positioning is provided by a long-stroke actuator, for example an eccentric linear drive actuator.

Abstract: Machine learning models can be trained to predict imaging characteristics with respect to variation in a pattern on a wafer resulting from a patterning process. However, due to low pattern coverage provided by limited wafer data used for training, machine learning models tend to overfit, and predictions from the machine learning models deviate from physical trends that characterize the pattern on the wafer and/or the patterning process with respect to the pattern variation. To enhance pattern coverage, training data is augmented with pattern data that conforms to a certain expected physical trend, and applies to new patterns not covered by previously measured wafer data.

Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.

Abstract: An amplified optical beam is provided to a region that receives a target including target material, an interaction between the amplified optical beam and the target converting at least some of the target material from a first form to a second form to form a light-emitting plasma; first data comprising information related to the amplified optical beam is accessed; second data comprising information related to the light-emitting plasma is accessed; and an amount of the target material converted from the first form to the second form is determined. The determination is based on at least the first data and the second data, and the second form of the target material is less dense than the first form of the target material.

Abstract: Method for calculating a reparation dose for a die of a substrate, the method including: a) obtaining a function of a distribution of an energy dose applied to the die over time based on a measurement of exposure energy, b) determining energy dose in a timeslot with a reparation point in the centre of the timeslot, c) calculating a slope of the function in the timeslot to determine at least one measurement point, the at least one measurement point being positioned within the timeslot based on the slope of the function in the timeslot; d) calculating a reparation dose at the measurement point; e) calculating a repair energy based on the reparation dose; f) updating the function over the timeslot based on applying the repair energy at the reparation point.

Abstract: A pellicle membrane includes a population of metal silicide crystals in a silicon-based matrix, wherein the pellicle membrane has an emissivity of 0.3 or more. Also a method of manufacturing a pellicle membrane, a pellicle assembly, a lithographic apparatus comprising such a pellicle membrane or pellicle assembly. Also the use of such a pellicle membrane, pellicle assembly, or lithographic apparatus in a lithographic apparatus or method.

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

Abstract: A lithographic apparatus includes: an illumination system configured to condition a radiation beam; a support structure constructed to support a reticle and pellicle assembly for receipt of the radiation beam conditioned by the illumination system; a substrate table constructed to support a substrate; a projection system configured to receive the radiation beam from the reticle-pellicle assembly and to project it onto the substrate; and a heating system configured to heat a pellicle of the reticle-pellicle assembly supported by the support structure. A method for using a reticle-pellicle assembly including: illuminating the reticle-pellicle assembly with a radiation beam so as to form a patterned image on a substrate; and heating the pellicle of the reticle-pellicle assembly using a separate heat source.

Abstract: A fluid extraction system for a lithographic apparatus, the fluid extraction system configured to extract fluid that a fluid handling system, including a fluid handling structure, is arranged to supply along a flow path that includes a gap between an edge of a substrate and an edge of a surrounding structure of the substrate; and a controller arranged to control the flow rate of the fluid in the flow path in dependence on one or more selected from: a property of the substrate, a property of the fluid handling system, a property of the fluid handling structure, a property of the fluid extraction system, and/or the separation between the fluid handling structure and the fluid extraction system.

Abstract: Disclosed is metrology apparatus for measurement of a diffractive structure on a substrate. comprising: a radiation source operable to provide first radiation for excitation of the diffractive structure, said first radiation having a first wavelength; a detection arrangement operable to detect at least diffracted second radiation comprising a second harmonic of said first radiation, said diffracted second radiation being generated from said diffractive structure and/or substrate and diffracted by said diffractive structure; and a processing arrangement operable to determine a parameter of interest relating to said diffractive structure from at least said diffracted second radiation.

Abstract: Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system comprising a beam-limit aperture plate having a surface substantially perpendicular to an optical axis, the beam-limit aperture plate comprising a first aperture at a first distance relative to the surface of the beam-limit aperture plate, and a second aperture at a second distance relative to the surface of the beam-limit aperture plate, the second distance being different from the first distance. The first aperture may be a part of a first set of apertures of the beam-limit aperture plate at the first distance, and the second aperture may be a part of a second set of apertures of the beam-limit aperture plate at the second distance.

Abstract: Disclosed is a method of determining a complex-valued field relating to a sample measured using an imaging system. The method comprises obtaining image data relating to a series of images of the sample, imaged at an image plane of the imaging system, and for which at least two different modulation functions are imposed in a Fourier plane of the imaging system; and determining the complex-valued field from the imaging data based on the imposed modulation functions.

Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.

Abstract: A grating is provided on a mirror for specularly reflecting and diffracting a grazing-incidence beam of radiation and has a periodic structure with a grating period comprising first (ridge) and second (trench) substructures either side of a sidewall 806 facing the incident beam 800. The ridge is configured to specularly reflect the beam from the flat top 808 of the ridge into a specularly reflected beam 810 in a zeroth-order direction ??=?. The grating is configured with fixed or varying pitch to diffract the beam from the grating periods in one or more non-zero-diffraction-order direction ????. The shape of the trench may be is described by structural parameters top width and depth that define the aspect ratio of the trench. The shape is determined such that any rays (and optionally diffraction) of the beam that reflect once from the trench floor in the zeroth-order direction are obscured by the sidewall.

Abstract: An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein N is an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

Abstract: Disclosed is a thermo-mechanical actuator comprising a piezo-electric module, the piezo-electric module comprising at least one piezo-electric element, wherein the thermo-mechanical actuator is configured to receive a thermal actuation signal for controlling a thermal behaviour of the piezo-electric module, or provide a thermal sensing signal representative of a thermal state of the piezo-electric module. The thermo-mechanical actuator is configured to receive a mechanical actuation signal for controlling a mechanical behaviour of the piezo-electric module, or provide a mechanical sensing signal representative of a mechanical state of the piezo-electric module. And wherein the thermal actuation signal is configured to create a heat flux within the piezo-electric module and wherein the mechanical actuation signal is configured to deform the piezo-electric module.

Abstract: A source selection module for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The source selection module includes a beam dispersing element for dispersing the broadband illumination beam; a grating light valve module for spatially modulating the broadband illumination beam subsequent to being dispersed; and a beam combining element to recombine the spatially modulated broadband illumination beam to obtain an output source beam.

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.