Abstract: A coupling having a variable stiffness is disclosed. The coupling includes: a deformable component and a support being movably arranged with respect to each other, wherein the deformable component includes a viscoelastic material, wherein the support has a recess configured to receive the deformable component, wherein the deformable component is configured to deform in volumetric deformation when, in use, a force is applied to the deformable component, and wherein a shape of the deformable component and a shape of the support are configured such that the variable stiffness gradually increases as a function of an amount of the force. A stage apparatus may have the coupling.

Abstract: Systems, apparatuses, and methods for detecting a location of a positioned sample may include an electrostatic holder configured to hold a sample and form a gap area between an outside edge of the sample and a structure of the electrostatic holder when the electrostatic holder holds the sample, wherein the gap area is coated with a first coating configured to reflect a first wavelength of light with first brightness and to reflect a second wavelength of the light with second brightness, the first wavelength is within a predetermined range of wavelengths, the second wavelength is outside the predetermined range of wavelengths, and the first brightness is higher than the second brightness; a light source configured to direct the light at the gap area; and an optical detector configured to image the light reflected off the gap area.

Abstract: Disclosed is a detection apparatus for simultaneous acquisition of multiple images of an object at a plurality of different focus levels; comprising: a modulator for obtaining multiple beam copies of an incoming beam; and a detector operable to capture said multiple beam copies, such that at two of said multiple beam copies are captured at different focus levels. Also disclosed is an inspection apparatus comprising such a detection system.

Abstract: In some embodiments, one or more non-transitory, machine-readable medium has instructions thereon, the instructions when executed by a processor being configured to perform operations comprising obtaining scanning electron microscopy (SEM) metrology data for first areas on a training wafer, obtaining optical metrology data for second areas on the training wafer, and training a model, by using the SEM metrology data and the optical metrology data for the training wafer, to generate parameters for features on a production wafer based on optical metrology data for areas of the production wafer.

Abstract: Disclosed is an actuator unit for positioning an optical element including a reluctance actuator comprising a first stator part and a first mover part that are separated by a gap with respect to each other in a first direction. The first mover part is configured to move the optical element. The first stator part is configured to move the first mover part in a second direction that is different from the first direction. The first stator part comprises at least one stator pole. The first mover part comprises at least one mover pole facing the at least one stator pole. Viewed from the second direction, a width of the at least one mover pole along the second direction is smaller than a width of the at least one stator pole along the second direction.

Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

Abstract: A method of determining a performance parameter distribution and/or associated quantile function. The method includes obtaining a quantile function prediction model operable to predict a quantile value for a substrate position and given quantile probability such that the predicted quantile values vary monotonically as a function of quantile probability and using the trained quantile 5 function prediction model to predict quantile values for a plurality of different quantile probabilities for one or more locations on the substrate.

Abstract: Embodiments herein describe methods, devices, and systems for rupture detection and end-of-life monitoring of dynamic gas lock (DGL) membranes and pupil facet mirrors in lithographic apparatuses. A method for detecting rupture of a dynamic gas lock membrane in a lithographic apparatus includes illuminating the dynamic gas lock membrane with a measurement beam using a radiation source, in which the dynamic gas lock membrane is arranged between a wafer and projection optics of the lithography apparatus, and determining whether any radiation from the measurement beam is reflected from the dynamic gas lock membrane by using reflection collection optics, in which the reflection collection optics are arranged above the dynamic gas lock membrane. A rupture in the dynamic gas lock membrane is detected if no radiation is reflected from the dynamic gas lock membrane. If radiation is reflected from the dynamic gas lock membrane, the dynamic gas lock membrane is not ruptured.

Abstract: A method including: generating a first force to attract a substrate holder to a support surface, the holder including a body having opposing first and second body surfaces, first burls at the first body surface, wherein each first burl has a distal end to support a substrate, and second burls at the second body surface to support the substrate holder on the support surface through contact with distal ends of the second burls; generating a second force to attract the substrate to the substrate holder; and controlling the first force and/or second force in a release step to deform the body between the second burls such as to create a gap between the distal ends of a first subset of the plurality of first burls and the substrate and such that the substrate is supported on distal ends of a second subset of the plurality of first burls.

Abstract: An illumination and detection apparatus for a metrology tool, and associated method. The apparatus includes an illumination arrangement operable to produce measurement illumination having a plurality of discrete wavelength bands and having a spectrum having no more than a single peak within each wavelength band. The detection arrangement includes a detection beamsplitter to split scattered radiation into a plurality of channels, each channel corresponding to a different one of the wavelength bands; and at least one detector for separate detection of each channel.

Abstract: A lithographic apparatus including a substrate stage for supporting a structure in a compartment, the compartment having a compartment surface facing a top surface of the substrate in at least one operational configuration; and a soft coating on the compartment surface for capturing particles. A heat shield or component thereof for a lithographic apparatus, the heat shield or component thereof including a soft coating on at least one surface for capturing particles and a lithographic apparatus including such a heat shield.

Abstract: Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

Abstract: A method for grouping patterns associated with one or more design layouts of a semiconductor. The method involves obtaining a set of patterns (e.g., from one or more design layouts), where a pattern of the set of patterns includes a non-intersected feature portion (e.g., parallel bars) within a bounding box of the pattern. A non-intersected feature portion of a pattern is encoded to a pattern representation having elements, where each element has a first component indicating a type of an individual non-intersected feature portion, and a second component indicating a width of the individual non-intersected feature portion projected along a designated edge of an area enclosing the pattern. The set of patterns are grouped into one or more groups by comparing the pattern representations associated with the set of patterns.

Abstract: A method of using a dual stage lithographic apparatus, wherein the lithographic apparatus includes: two substrate supports each arranged to move and support a substrate, a measure field in which selectively one of the two substrate supports is positioned to measure a feature of the substrate supported by the respective one of the two substrate supports, and an expose field in which selectively one of the two substrate supports is positioned to expose the substrate supported by the respective one of the two substrate supports to a patterned beam of radiation, the method including thermal relaxation of a substrate loaded on one of the two substrate supports, wherein the thermal relaxation is at least partially performed at the expose field and/or in transfer between the measure field and the expose field.

Abstract: A structure for use on a base surface of a substrate holder, wherein the structure is substantially planar with a substrate holder facing surface that is both securable to the base surface of the substrate holder and also removable from the base surface of the substrate holder, the structure having a plurality of apertures therethrough that are arranged such that a plurality of burls on the base surface may pass through the respective apertures, wherein the diameter of the apertures is in the range 50 ?m to 1000 ?m and the pitch between adjacent apertures is in the range 1 mm to 3 mm.

Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining a reconstruction recipe describing at least nominal values for use in a reconstruction of a parameterization describing a target. The method includes obtaining first measurement data relating to measurements of a plurality of targets on at least one substrate, the measurement data relating to one or more acquisition settings and performing an optimization by minimizing a cost function which minimizes differences between the first measurement data and simulated measurement data based on a reconstructed parameterization for each of the plurality of targets. A constraint on the cost function is imposed based on a hierarchical prior. Also disclosed is a hybrid model method comprising obtaining a coarse model operable to provide simulated coarse data; and training a data driven model to correct the simulated coarse data so as to determine simulated data for use in reconstruction.

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model includes a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

Abstract: Diffraction gratings for a phase-stepping measurement system for determining an aberration map for a projection system are disclosed. The gratings are two-dimensional diffraction gratings for use as wafer level gratings in an EUV lithographic apparatus. In particular, the diffraction gratings include a substrate provided with a two-dimensional array of circular through-apertures and are self-supporting. In some embodiments, a ratio of the radius of the circular apertures to the distance between the centers of adjacent apertures may be selected to minimize the gain and cross-talk errors of a wavefront reconstruction algorithm. For example, the ratio may be between 0.34 and 0.38. In some embodiments, the circular apertures are distributed such that a distance between the centers of adjacent apertures is non-uniform and varies across the diffraction grating. For example, a local pitch of the grating may vary randomly across the diffraction grating.

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Abstract: A method of operating a lithographic apparatus that comprises: a projection system configured to provide exposure radiation for patterning a substrate underneath the projection system; a first stage configured to support a first substrate; a second stage configured to support a second substrate; and a third stage accommodating a component that includes at least one of a sensor and a cleaning device; wherein the method comprises starting a pre-exposure scrum sweep operation after starting a substrate exchange operation; wherein during the pre-exposure scrum sweep operation, the third stage moves away from underneath the projection system while the second stage moves to underneath the projection system; wherein during the substrate exchange operation, the first substrate is unloaded from the first stage.