Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Abstract: Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method includes accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a substrate, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also includes identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, the identifying including identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further includes selecting the subset of critical patterns corresponding to the subset of representative peaks.

Abstract: Disclosed is a dark-field interferometric microscope and associated microscopy method. The microscope comprises an object branch being operable to propagate object radiation onto a sample and collect resultant scattered radiation from said sample and a reference branch being operable to propagate reference radiation. The object radiation and said reference radiation are mutually pointwise spatially coherent. A filter arrangement removes a zeroth order component from said scattered radiation to provide filtered scattered radiation; and a detection arrangement detects an interferometric image from interference of said filtered scattered radiation and reference radiation.

Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

Abstract: The invention provides a position measurement system to measure a position of an object in a movement direction relative to a reference, said position measurement system comprising: —a diffraction grating, and —an interferometer, wherein the interferometer is configured to direct a measurement beam to the diffraction grating in a measuring direction that is orthogonal to the movement direction of the object, and wherein the diffraction grating is oriented relative to the interferometer such that the measurement beam is substantially at a Littrow angle of the diffraction grating so that a diffracted beam to be received by the interferometer is substantially parallel to the measuring direction.

Abstract: A plate for use in an imaging system to determine at least two optical properties of an illumination beam of the imaging system, the imaging system configured to illuminate an illumination region with the illumination beam, the plate including a plurality of markers, wherein a first subset of the plurality of markers includes a first type of markers for determining a first optical property of the illumination beam, and a second subset of the plurality of markers includes a second type of markers for determining a second optical property of the illumination beam, wherein the plurality of markers are located within a marker region of the plate and the marker region generally corresponds to the illumination region.

Abstract: A method includes receiving an image formed in a metrology apparatus wherein the image comprises at least the resulting effect of at least two diffraction orders, and processing the image wherein the processing comprises at least a filtering step, for example a Fourier filter. The process of applying a filter may be obtained also by placing an aperture in the detection branch of the metrology apparatus.

Abstract: A method for manufacturing a capillary usable as part of a hollow-core photonic crystal fiber. The method includes obtaining a capillary having capillary wall including a first wall thickness; and chemically etching the capillary wall to reduce the wall thickness of the capillary wall. During performance of the etching, a control parameter is locally varied along the length of the capillary, the control parameter relating to reactivity of an etchant used in the etching, so as to control the etched wall thickness of the capillary wall along the capillary length. Also disclosed is a capillary manufactured by such a method and various devices including such a capillary.

Abstract: Radiation source assemblies and methods for generating broadened radiation by spectral broadening. A radiation source assembly includes a pump source configured to emit modulated pump radiation at one or more wavelengths. The assembly further has an optical fiber configured to receive the modulated pump radiation emitted by the pump source, the optical fiber including a hollow core extending along at least part of a length of the fiber. The hollow core is configured to guide the received radiation during propagation through the fiber. The radiation emitted by the pump source includes first radiation at a pump wavelength, and the pump source is configured to modulate the first radiation for stimulating spectral broadening in the optical fiber.

Abstract: Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the printed pattern to determine a local focus point (LFP) for an imaging device; selecting a HS area in the printed pattern that contains a HS; and determining the LFP proximate to the HS area based on the LFP search criteria, the LFP not containing the HS.

Abstract: Systems, apparatuses, and methods are provided for correcting an alignment measurement or overlay error. An example method can include measuring an observable in response to an illumination of a region of a surface by a radiation beam, such as interference between radiation diffracted from the region. The example method can further include generating a measurement signal indicative of the observable. In some aspects, the measurement signal can include interference fringe pattern data indicative of the measured interference. The example method can further include determining a correction to a measurement value based on measurement signal. Optionally, the correction can include a correction to an alignment measurement of an alignment sensor, a correction to an overlay error of an overlay sensor, or both.

Abstract: Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include determining whether an exposure field for a wafer exposure operation is less than a maximum exposure field of a uniformity correction system. In response to determining that the exposure field is less than the maximum exposure field, the example method can include modifying illumination slit uniformity calibration data associated with the maximum exposure field to generate modified illumination slit uniformity calibration data associated with the exposure field. Subsequently, the example method can include determining an optimal position of a finger assembly of the uniformity correction system based on the modified illumination slit uniformity calibration data.

Abstract: A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., one or more mirrors of a VUV) of a substrate inspection system is disclosed. The cleaning system ionizes or disassociates hydrogen gas in a VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H+, H2+, H3+), which remove water or hydrocarbons from the surface of the one or more mirrors. The one or more VUV mirrors may include a reflective material, such as aluminum. The one or more VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may include a noble metal.

Abstract: Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern including sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization be performed with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.

Abstract: A modular autoencoder model is described. The modular autoencoder model comprises input models configured to process one or more inputs to a first level of dimensionality suitable for combination with other inputs: a common model configured to: reduce a dimensionality of combined processed inputs to generate low dimensional data in a latent space; and expand the low dimensional data in the latent space into one or more expanded versions of the one or more inputs suitable for generating one or more different outputs; output models configured to use the one or more expanded versions of the one or more inputs to generate the one or more different outputs, the one or more different outputs being approximations of the one or more inputs; and a prediction model configured to estimate one or more parameters based on the low dimensional data in the latent space.

Abstract: Disclosed herein is a manipulator or an array of manipulator. A manipulator manipulates a charged particle beam in a projection system. The manipulator comprising a substrate with major surfaces and a through-passage between associated apertures in the major surfaces. The through passage configured for passage of a path of a charged particle beam. An inner wall of the through-passage between the major surfaces comprises a plurality of electrodes configured to manipulate the charged particle beam. Each electrode comprises doped substrate. The through-passage comprises recesses that extend away from the path of the charged particle beam. Each recess defines a gap between the adjacent electrodes and further comprising an electrically insulating region between the adjacent electrodes. The recesses extend behind at least one of the adjacent electrodes relative to the path of the charged particle beam and comprising at least part of the electrically insulating region.

Abstract: An inspection apparatus for inspecting an object such as a pellicle for use in an EUV lithographic apparatus, the inspection apparatus including: a vacuum chamber; a load lock forming an interface between the vacuum chamber and an ambient environment; and a stage apparatus configured to receive the object from the load lock and displace the object inside the vacuum chamber, wherein the vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object.

Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.

Abstract: A multi-source illumination apparatus for illuminating a sample with charged particles, wherein beams, from a plurality of sources, are arranged such that a beam from at least one source intersects, at a plane of a condenser lens, with at least part of one other beam from a different one of the plurality of sources. The condenser lens is configured to separately collimate the received beams from each source. A manipulator array arrangement is configured to manipulate the collimated beams to generate one or more beams, in a single column, that include charged particles from the plurality of sources. The manipulator array arrangement includes a multi-beam generator configured to receive the plurality of substantially parallel substantially collimated beams generated by the deflector array, and generate a multibeam in dependence on the received plurality of substantially parallel substantially collimated beams, wherein the multi-beam includes a plurality of substantially collimated sub-beams.