Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

Abstract: A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.

Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method includes: obtaining inspection data including a plurality of sets of measurement data associated with a structure on the substrate or portion thereof (for example measurement pupils); and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on a degree to which the iterative mapping converges on a solution.

Abstract: A system includes an illumination system, an optical element, and a detector. The optical system is implemented on a substrate. The illumination system includes first and second sources and first and second generators. The illumination system generates a beam of radiation. The first and second sources generate respective first and second different wavelength bands. The first and second resonators are optically coupled to respective ones of the first and second sources and narrow respective ones of the first and second wavelength bands. The optical element directs the beam toward a target structure. The detector receives radiation from the target structure and to generate a measurement signal based on the received radiation.

Abstract: Systems and methods of removing a contaminant from an emitter tip of an electron source in an electron beam apparatus are disclosed. An electron beam apparatus may include an electron source comprising an emitter tip configured to emit electrons and an optical source configured to generate an optical beam illuminating a portion of the emitter tip to excite a surface mode of the optical beam, wherein the excited surface mode facilitates removal of a contaminant from a surface of the illuminated portion of the emitter tip. The excited surface mode may comprise a propagating surface wave or a localized surface wave. The emitter tip may comprise a grating structure, wherein a characteristic of the grating structure matches a wavevector of the optical beam.

Abstract: A computer implemented method of determining a placement metric relating to placement of one or more features on a substrate in a lithographic process. The method includes obtaining setup data including placement error contributor data relating to a plurality of placement error contributor parameters and yield data representative of yield and defining a statistical model for predicting a yield metric, the statistical model being based on a placement metric, the placement metric being a function of the placement error contributor parameters, and associated model coefficients. The model coefficients are fitted based on the setup data, and the placement metric determined from the fitted model coefficients.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A gripper for an object handler includes an engaging surface for engaging a surface of an object, and a first channel connected to a first outlet, the first outlet being configured to operate, during use, as a vacuum clamp arranged to secure the engaging surface to the surface of the object. The gripper further includes a second channel arranged to be connected to a pressure source, and at least one second outlet arranged adjacent to the engaging surface and connected to the second channel.

Abstract: Apparatuses and systems for stabilizing electron sources in charged particle beam inspection systems are provided. In some embodiments, a system may include an electron source comprising an emitting tip electrically connected to two electrodes and configured to emit an electron; and a base coupled to the emitting tip, wherein the base is configured to stabilize the emitting tip via the coupling.

Abstract: A sensor system for measuring a shape of a substrate, the sensor system include: a substrate support to support a surface of the substrate; at least one sensor device, each sensor device including an optical emitter to emit radiation onto the surface of the substrate, and an optical receiver to receive the radiation reflected from the surface; and a controller. The controller is configured to: determine at least one measurement height of the surface of the substrate above each of the at least one sensor device, based on the received radiation; compensate for gravitational sag of the substrate relative to a calibration height; and determine the shape of the substrate based on a comparison of the calibration height and the at least one measurement height.

Abstract: Disclosed is a metrology device operable to measure a sample with measurement radiation and associated method. The metrology device comprises: an illumination branch operable to propagate measurement radiation to a sample, a detection branch operable to propagate one or more components of scattered radiation, scattered from said sample as a result of illumination of the sample by said measurement radiation; and a dispersive arrangement in either of said illumination branch or said detection branch. The dispersive arrangement is arranged to maintain one or more components of said scattered radiation at substantially a same respective location in a detection pupil plane over a range of wavelength values for said measurement radiation.

Abstract: Disclosed is a method of measuring a structure, and associated metrology device and computer program. The method comprises obtaining an amplitude profile of scattered radiation relating to a measurement of a first structure on a first substrate and obtaining a reference phase profile relating to a reference measurement of at least one reference structure on a reference substrate. The at least one reference structure is not the same structure as said first structure but is nominally identical in terms of at least a plurality of key parameters. The method further comprises determining a complex-valued field to describe the first structure from the amplitude profile and reference phase profile.

Abstract: A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Abstract: Disclosed is a thermo-mechanical actuator (100) comprising a piezo¬electric module (110), the piezo-electric module comprising at least one piezo-electric element (120), wherein the thermo-mechanical actuator is configured to: •o receive a thermal actuation signal (132) for controlling a thermal behaviour of the piezo-electric module, or •o provide a thermal sensing signal (132) representative of a thermal state of the piezo-electric module, and, wherein the thermo-mechanical actuator is configured to: •o receive a mechanical actuation (134) signal for controlling a mechanical behaviour of the piezo-electric module, or •o provide a mechanical sensing signal (134) representative of a mechanical state of the piezo-electric module.

Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

Abstract: A method for reducing M3D effects on imaging is described. The method includes identifying points within a source plane of the photolithography system that are associated with pattern shifts resulting from diffraction of light off a photomask under an angle of incidence between an imaging beam of radiation and the mask normal, determining pattern shifts associated with the identified source plane points, and modifying the source to reduce the determined pattern shifts.

Abstract: Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Abstract: Disclosed is a method of determining a reliability metric describing a reliability of metrology signal and/or a parameter of interest value derived therefrom and associated apparatuses. The method comprises obtaining a trained inference model for inferring a value for a parameter of interest from a measurement signal and one or more measurement signals and/or respective one or more values of a parameter of interest derived therefrom using said trained inference model. At least one reliability metric value is determined for the one or more measurement signals and/or respective one or more values of a parameter of interest, the reliability metric describing a reliability of one or more measurement signals and/or respective one or more values of a parameter of interest with respect to an accurate prediction space associated with the trained inference model.

Abstract: A charged-particle optical apparatus configured to project a multi-beam of charged particles, the apparatus comprising: a charged particle device switchable between (i) an operational configuration in which the device is configured to project the multi-beam to a sample along an operational beam path extending from a source of the multi-beam to the sample and (ii) a monitoring configuration in which the device is configured to project the multi-beam to a detector along a monitoring beam path extending from the source to the detector; wherein the monitoring beam path diverts from the inspection beam path part way along the operational beam path.

Abstract: An apparatus for cleaning a component for use in a lithographic apparatus, the apparatus including at least one cleaning module or a plurality of cleaning modules, wherein the at least one cleaning module or the plurality of cleaning modules include a plurality of cleaning mechanisms, and wherein the plurality of cleaning mechanisms include: at least one preparing mechanism for reducing adhesion of the particles to the component and at least one removing mechanism for removing particles from the component, or a plurality of removing mechanisms for removing particles from the component.