Patents Assigned to ASML Netherlands
  • Publication number: 20240212108
    Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.
    Type: Application
    Filed: March 5, 2024
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Thomas Jarik HUISMAN, Jasper Frans Mathijs VAN RENS
  • Publication number: 20240210840
    Abstract: A laser beam metrology system (500) configured to co-operate with a laser beam system that is configured to sequentially direct a first laser beam pulse and a second laser beam pulse (430) to a target along two independent optical paths, the laser beam metrology system comprising a beam steering device (470) and a detection system (510). A laser beam system comprising the laser beam metrology system and a EUV source is also described.
    Type: Application
    Filed: March 29, 2022
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Willem Paul BEEKER, Krishna Prashanth ANANDAN, Vasishta Parthasarathy GANGULY
  • Publication number: 20240210844
    Abstract: Disclosed is a method of determining a substrate deformation metric relating to at least one substrate, the substrate deformation metric describing deformation across the at least one substrate. The method comprises obtaining alignment data relating to measurement of a plurality of structures on said substrate using a plurality of illumination conditions; and determining substrate deformation metric values for the substrate deformation metric which minimizes the number of basis vectors which are required to expand dispersion due to structure deformation of said plurality of structures.
    Type: Application
    Filed: March 5, 2024
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Patricius Aloysius Jacobus TINNEMANS, Leendert Jan KARSSEMEIJER
  • Publication number: 20240212125
    Abstract: A method of obtaining focus and dose data that requires no special marks and that uses images of in-die features is described. A focus/dose matrix wafer is created. Dimensions such as critical dimension (CD), CD uniformity (CDU), edge placement error (EPE), etc., at in-die locations are measured using a charged particle inspection system having a large field of view. Machine learning or regression methods are used to determine a relationship between focus and dose and the measured data. The same dimensions can then be measured on a production wafer and the relationship can be utilized to determine the focus and dose for the production wafer.
    Type: Application
    Filed: March 5, 2024
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Junru RUAN, Haiyan LI
  • Publication number: 20240212131
    Abstract: An improved method of defect classification is disclosed. An improve method comprises obtaining an inspection image, obtaining layout data associated with the image, obtaining a probability map derived from the layout data, wherein the probability map identifies a probability of a first type of defect occurring in a region of the layout data, identifying a defect in the inspection image occurring at a first location, and classifying the defect based on the probability map and the first location.
    Type: Application
    Filed: February 17, 2022
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Hairong LEI, Wei FANG, Yung Wen FU
  • Publication number: 20240212317
    Abstract: Apparatuses, systems, and methods for grouping a plurality of patterns extracted from image data are disclosed. In some embodiments, the method for grouping the patterns comprises receiving the image data including the plurality of patterns that represent features to be formed on a portion of a wafer. The method also comprises separating the plurality of patterns after Fourier Transform into multiple sets of patterns. The method further comprises performing, to a respective set of patterns, a hierarchical clustering to obtain a plurality of subsets of patterns by recursively evaluating features related to similarity between patterns within the respective set of patterns.
    Type: Application
    Filed: April 28, 2022
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Jingchun WANG, Chuang YE, Shengcheng JIN
  • Publication number: 20240210336
    Abstract: Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.
    Type: Application
    Filed: March 5, 2024
    Publication date: June 27, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Marie-Claire VAN LARE, Marco Jan-Jaco WIELAND
  • Patent number: 12019377
    Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: June 25, 2024
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Olger Victor Zwier, Patrick Warnaar
  • Publication number: 20240201029
    Abstract: An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.
    Type: Application
    Filed: March 29, 2022
    Publication date: June 20, 2024
    Applicant: ASML Netherland B.V.
    Inventors: Koen Martin Willem Jan BOS, Joost André KLUGKIST, Anirudh ANAND
  • Publication number: 20240201486
    Abstract: A method includes determining optical aberrations of an optical system, identifying an illumination profile that compensates for the optical aberrations of the optical system, and curing a layer of optical cement of an optical device using a modulated energy beam to achieve the identified illumination profile.
    Type: Application
    Filed: March 31, 2022
    Publication date: June 20, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Krishanu SHOME, Scott Douglas COSTON, Kan DU
  • Publication number: 20240192610
    Abstract: Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.
    Type: Application
    Filed: February 9, 2024
    Publication date: June 13, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Gijs TEN HAAF, Everhardus Cornelis MOS, Hans Erik KATTOUW, Ralph BRINKHOF
  • Publication number: 20240196504
    Abstract: There is described a connection assembly (24) for a high-pressure liquid metal supply system used in an EUV light source comprising a monolithic block, wherein the monolithic block includes: at least one connection (21) for connecting to a reservoir (18,19) configured to hold liquid metal: interior passages (25) configured to fluidly connect the at least one connection with at least two liquid metal outlets/inlets (22, 23): at least two freeze valves (15,16,17) configured to block a passage by solidifying liquid metal therein. Also described is a liquid metal storage assembly including such a connection assembly, a lithography apparatus including such a liquid metal storage assembly or such a connection assembly, as well as the use of such assemblies or apparatus in a lithographic apparatus or method.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 13, 2024
    Applicant: ASML Netherlands B.V.
    Inventor: Ivo VANDERHALLEN
  • Patent number: 12007699
    Abstract: A vessel (16) for an EUV radiation source, the vessel comprising a first opening (30) for accessing an interior (32) of the vessel, a first access member (34) configured to allow or prevent access to the interior of the vessel through the first opening, a second opening (36) for accessing the interior of the vessel, the second opening being arranged in the first access member and a second access member (38) arranged on the first access member and configured to allow or prevent access to the interior of the vessel through the second opening.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: June 11, 2024
    Assignee: ASML Netherlands B.V.
    Inventors: Sander Kerssemakers, Robert Gabriël Maria Lansbergen, Martinus Hendrikus Antonius Leenders, Henricus Gerardus Tegenbosch
  • Patent number: 12007219
    Abstract: The invention provides an apparatus configured for determining a distance of the apparatus to an object according to the principle of triangulation. The apparatus comprises a transmissive device with a predefined distance between a first surface and a second surface of the transmissive device, and a detector that is configured to receive at least a portion of a radiation beam after interaction with the transmissive device and the object. The first surface is arranged to reflect a first part of the radiation beam, and the second surface is arranged to reflect a second part of the radiation beam. The predefined distance is used for determining the distance of the apparatus to the object.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: June 11, 2024
    Assignee: ASML Netherlands B.V.
    Inventor: Erwin Van Dorp
  • Patent number: 12007590
    Abstract: A two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises a substrate provided with a square array of through-apertures, wherein the diffraction grating is self-supporting. It will be appreciated that for a substrate provided with a square array of through-apertures to be self-supporting at least some substrate material is provided between each through-aperture and the adjacent through apertures. A method of designing a two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises: selecting a general geometry for the two-dimensional diffraction grating, the general geometry having at least one parameter; and selecting values for the least one parameter that result in a grating efficiency map for the two-dimensional diffraction grating so as to control the contributions to a first harmonic of a phase stepping signal.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: June 11, 2024
    Assignee: ASML Netherlands B.V.
    Inventors: Pieter Cristiaan De Groot, Johannes Jacobus Matheus Baselmans, Derick Yun Chek Chong, Yassin Chowdhury
  • Patent number: 12007700
    Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
    Type: Grant
    Filed: July 1, 2022
    Date of Patent: June 11, 2024
    Assignee: ASML Netherlands B.V.
    Inventors: Patricius Aloysius Jacobus Tinnemans, Arie Jeffrey Den Boef, Armand Eugene Albert Koolen, Nitesh Pandey, Vasco Tomas Tenner, Willem Marie Julia Marcel Coene, Patrick Warnaar
  • Patent number: 12007693
    Abstract: A laser focusing system (330) for use in an EUV radiation source is described, the laser focusing system comprising: •—a first curved mirror (330.1) configured to receive a laser beam from a beam delivery system (320) and generate a first reflected laser beam (316); •—a second curved mirror (330.2) configured to receive the first reflected laser beam (316) and generate a second reflected laser beam (317), wherein the laser focusing system (330) is configured to focus the second reflected laser beam (317) to a target location (340) in a vessel (350) of the EUV radiation source (360).
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: June 11, 2024
    Assignees: ASML Netherlands B. V., Trumpf Lasersystems For Semiconductor Manufacturing GmbH
    Inventors: Ruud Antonius Catharina Maria Beerens, Nico Johannes Antonius Hubertus Boonen, Stefan Michael Bruno Bäumer, Tolga Mehmet Ergin, Andreas Kristian Hopf, Derk Jan Wilfred Klunder, Martin Anton Lambert, Stefan Piehler, Manisha Ranjan, Frank Bernhard Sperling, Andrey Sergeevich Tychkov, Jasper Witte, Jiayue Yuan
  • Publication number: 20240186145
    Abstract: A surface treatment device for treating a surface of a substrate support, wherein the surface treatment device comprises a contacting surface that is configured to contact the surface of the substrate support. The contacting surface is configured with at least a first contour with a first centre of curvature and a second contour with a second centre of curvature, wherein the first centre of curvature and the second centre of curvature are non-coincident points.
    Type: Application
    Filed: April 4, 2022
    Publication date: June 6, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Monim AZIMI, Tjarco LINDEIJER, Michel DIJKSTRA, Siegfried Alexander TROMP, Ashwin SRIDHAR
  • Publication number: 20240184218
    Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.
    Type: Application
    Filed: February 14, 2024
    Publication date: June 6, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Nitesh PANDEY, Arie Jeffrey DEN BOEF, Duygu AKBULUT, Marinus Johannes Maria VAN DAM, Hans BUTLER, Hugo Augustinus Joseph CRAMER, Engelbertus Antonius Fransiscus VAN DER PASCH, Ferry ZIJP, Jeroen Arnoldus Leonardus Johannes RAAYMAKERS, Marinus Petrus REIJNDERS
  • Publication number: 20240183806
    Abstract: Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.
    Type: Application
    Filed: March 4, 2022
    Publication date: June 6, 2024
    Applicant: ASML Netherlands B.V.
    Inventors: Te-Sheng WANG, Szu-Po WANG, Tsung-Hsien LIU, Yung-Huan HSIEH