Abstract: Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic with inductive broadbanding fabricated in conventional CMOS process technology. Optimum balance between power consumption and speed for each circuit application is achieve by combining high speed C3MOS logic with inductive broadbanding /C3MOS logic with low power conventional CMOS logic. The combined C3MOS logic with inductive broadbanding /C3MOS /CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.

Abstract: Method and circuitry for improving the accuracy and efficiency of a phase-locked loop. More specifically, the present invention relates to a method and device for monitoring the frequency discrepancy between two signals in conjunction with at least one data signal so as to improve the accuracy and efficiency of a phase-locked loop. In one embodiment of the present invention, two counters are used to check the frequency differential between a VCO signal and an external reference or input signal. An adjustable threshold is provided to determine whether the frequencies of the two signals are considered to be in a frequency-locked mode. A pair of flip-flops is used to minimize any erroneous detection of frequency discrepancy by validating two consecutive results of the frequency differential check. In addition, a data present signal is used to control the transition between the phase-locked mode and the frequency-locked mode to minimize the potential data loss.

Abstract: A system and method for applying a stress to a hierarchical memory structure in parallel, testing the memory structure for weak defects. The system and method includes writing a logic 0 into all the memory cells in a memory structure. All the high address predecoded lines and alternating predecoded lines for the lowest address are enabled. A voltage drop between neighboring wordlines and bitlines is affected. A logic 1 is written into all the memory cells in the memory structure. An opposite voltage polarity is caused on the bitlines due to the logic 1 in the memory cells. A reverse voltage polarity stress is achieved on the wordlines by flipping the state of the lowest predecoded line (i.e., by changing the input address corresponding to that line.

Abstract: The present invention provides a method for tuning output drivers to an operating frequency based on settings used to tune other devices within the device such as a VCO. First the VCO within a PLL and clock circuit is tuned to the desired operating frequency. This operating frequency then corresponds to a discrete tuning setting. The discrete setting that causes the VCO to function at the operating frequency are then transferred to scaled amplifiers within output drivers. These drivers are then tuned to the operating frequency with these settings. This process eliminates the need to individually tune each output driver to function properly at the operating frequency.

Abstract: Upstream requests such a bandwidth requests, are processed by CMTS out of order on a priority basis to reduce latency in responding to the request. Specifically, a cable modem termination system (CMTS) is connected to a plurality of cable modems by a cable plant. The CMTS has a burst receiver adapted to be connected to the cable plant to process upstream data packet units and bandwidth requests transmitted by the cable modems. Each packet includes a header that uniquely distinguishes the bandwidth requests from other data types. Packet data units are arranged in a first memory queue. Bandwidth requests are arranged in a second memory queue. The headers of the packets processed by the burst receiver are inspected as they arrive at the CMTS to determine if the packets are packet data units or bandwidth requests. Packet data units are routed to the first memory queue. Bandwidth requests are routed to the second memory queue.

Abstract: A multi-stage amplifier assembly configured to receive a terrestrial digital television (“DTV”) input signal including multiple frequency channels. The amplifier assembly optionally includes a PIN diode coupled across differential inputs to a first stage of the multi-stage amplifier assembly. The PIN diode is controlled to attenuate the input when an exceptionally large signal is present in a channel adjacent to a desired channel. The PIN diode, essentially a variable resistor, permits the multi-stage amplifier assembly to maintain dynamic range in such situations for reasonable tradeoffs. The amplifier assembly further optionally includes an out-of-band second stage LNA. The amplifier assembly further optionally includes a multi-band input filter. The multi-band filer insures that the AGC operates on the TV band of interest, thus improving the linearity of the system. The invention can be implemented in CMOS and/or SiGe.

Abstract: A differential line driver includes a plurality of driver cells. Control logic outputs positive and negative control signals to the driver cells so as to match a combined output impedance of the driver cells at (Vop, Von). Each driver cell includes an input Vip and an input Vin, an output Vop and an output Von, a first PMOS transistor and a first NMOS transistor having gates driven by the input Vip, and a second PMOS transistor and a second NMOS transistor having gates driven by the input Vin. A source of the first PMOS transistor is connected to a source of the second PMOS transistor. A source of the first NMOS transistor is connected to a source of the second NMOS transistor. First and second resistors are connected in series between the first PMOS transistor and the first NMOS transistor, and connected together at Von. Third and fourth resistors are connected in series between the second PMOS transistor and the second NMOS transistor, and connected together at Vop.

Abstract: A via provides a plurality of electrical connections between conductors on different layers of a circuit board. The via includes an opening through the circuit board formed by a plurality of substantially partially overlapping bores. An electrically conductive plating is formed on an inner surface of the opening. The plating forms a plurality of distinct electrically conductive paths.

Abstract: An electrically and mechanically enhanced die-down tape substrate ball grid array (BGA) package substrate is described. An IC package includes a substrate that has a first surface. The first surface has a central opening. A stiffener/heat spreader has a first surface. The first surface of the stiffener has a central ground ring. The first surface of the stiffener is coupled to a second surface of the substrate. The central opening has an edge. The edge includes at least one of the following: (a) a protruding edge portion that extends across at least a portion of the central ground ring, (b) a recessed edge portion that exposes a portion of the central ground ring, or (c) a hole proximate to the edge, wherein the hole exposes a portion of the central ground ring.

Abstract: A transition delay matching circuit in which the transition delay of the divided clock signal is substantially the same as the transition delay of the reference clock signal. The transition delay of the divided clock signal is adjusted by reducing the steady state amplitude of the divided clock signal. Apparatuses and methods for matching the transition delays of the divided clock signal and the reference clock signal are disclosed.

Abstract: Electrically, mechanically, and thermally enhanced ball grid array (BGA) packages are described. An IC die is mounted in a centrally located cavity of a substantially planar first surface of a stiffener. The first surface of a substrate is attached to a substantially planar second surface of the stiffener. The second surface of the stiffener is opposed to the first surface of the stiffener. A centrally located protruding portion on the second surface of the stiffener is opposed to the centrally located cavity. The protruding portion extends through an opening in the substrate. A wire bond is coupled from a bond pad of the IC die to a contact pad on the first surface of the substrate through a through-pattern in the stiffener. The through-pattern in the stiffener is one of an opening through the stiffener, a recessed portion in an edge of the stiffener, a notch in an edge of the recessed portion, and a notch in an edge of the opening.

Abstract: The present invention provides a frequency-diverse single-carrier modulation scheme that extends the usable SNR range of severely distorted channels. This scheme is advantageous for applications in which when the SNR is low and the transmitted spectrum contains unusable regions (e.g., spectral nulls due to radio-frequency interference ingress or egress). In one embodiment, the symbol baud rate is selected in order that unusable portions of the frequency response of the transmission channel are mapped onto usable portions of the frequency response of the transmission channel.

Abstract: A system and method for generating a graphical image on a display is disclosed. The graphical image is generated from data describing at least one object. The display includes a plurality of positions. Each of the plurality of positions has an area. The system and method include determining if a portion of the at least one object intersects a current position of the plurality of positions and providing an output if the portion intersects the current position. The method and system further include providing a mask for the portion if it is determined that the portion intersects the current position. The mask indicates an extent to which the at least one portion occupies the area of current position. The method and system further include utilizing the mask to provide antialiazing. The method and system also include repeating the determining, one mask providing, and utilizing steps for each of the plurality of positions.

Abstract: A network device for monitoring a memory partitioned by an identifier can include at least one port configured to receive at least one packet. The at least one packet includes an identifier relating to priority of the at least one packet. The network device can also include a buffer memory having at least one buffer configured to store the at least one packet, and a counter configured to modify a counter value therein when the buffer memory is accessed with respect to the at least one data packet, wherein the counter corresponds to the identifier with respect to the at least one packet.

Abstract: A compact dynamic random access memory (DRAM) cell and highly efficient methods for using the DRAM cell are disclosed. The DRAM cell provides reading, writing, and storage of a data bit on an ASIC chip. The DRAM cell includes a first transistor acting as a pass gate and having a first source node, a first gate node, and a first drain node. The DRAM cell also includes a second transistor acting as a storage device and having a second drain node that is electrically connected to the first drain node to form a storage node. The second transistor also includes a second source node and a second gate node. The second source node is electrically floating, thus increasing the effective storage capacitance of the storage node.

Abstract: A system and method for level shifting a core, lower voltage in a one-stage level shift device to produce a higher, driving voltage. The system includes a first device that optimally functions with a first voltage and that outputs the first voltage. The system also includes a one-stage level shift device that receives the first voltage and shifts the first voltage to a second voltage without an intermediate voltage, the second voltage being higher than the first voltage. The system also includes a second device that receives the second voltage to optimally function. In some cases, the first voltage can be a periodic wave such that the higher voltage is produced with one portion of the level shift device during a first portion of the wave and another portion of the level shift device during a second portion of the wave.

Abstract: The present invention relates to a register for a single chip multi-sublayer PHY. More specifically, the present invention relates to a transceiver module including a single chip multi-layer PHY having one or more shadow registers. The transceiver module includes one or more storage modules adapted to store transceiver module local data. The shadow registers are adapted to facilitate collection of the local data from the storage modules and communicate the collected data to another portion of the transceiver module and/or to the upper lever system using at least one interface communicating with the shadow register.

Abstract: A method of processing internal operations in a network switch includes the steps of constructing a lookup table in system memory by snooping a communication channel in a network switch for lookup table information. Upon detection of lookup table information on the communication channel, the lookup table information is transmitted to a remote system memory, thereby constructing a lookup table in the remote system memory. DMA operations are performed by providing a DMA descriptor including a reload field therein. The DMA descriptor is processed, and a location of a next DMA descriptor is identified based upon a condition of the reload field. The lookup table in remote system memory enables CPU access to the lookup table without requiring communication on the communication channel. The condition of the reload field enables flexible DMA descriptor handling. A network switch also includes elements associated with this method.

Abstract: The present invention relates to a system and method for selecting one of plurality of PRBS generators for use with a modem. The modem includes a measuring device adapted to measure an operating environment of the modem; and a storage device adapted to store a list of PRBS generator definitions. The modem selects one of a plurality of PRBS generators based on the measurement of the operating environment.

Abstract: An on-chip impedance matching includes a transistor, an inductor, and a capacitive divider. The gate of the transistor is operably coupled to receive input signals; the source of the transistor is coupled to a first DC voltage potential; and the drain of the transistor is operably coupled to the inductor. The other end of the inductor is operably coupled to a second DC voltage potential. The capacitive divider includes matched capacitors that, in combination with the inductor, provide for substantially lossless on-chip impedance matching, where a tap of the capacitive divider provides an output of the on-chip impedance matching power amplifier. In addition, the capacitance of the capacitive divider and the inductance of the inductor are tuned to provide a tank circuit for the on-chip impedance matching power amplifier.