Abstract: A method for manufacturing a semiconductor structure includes: a substrate with a groove structure formed therein is provided; a laminated structure is formed on the substrate, which includes a first conductive material layer, a second conductive material layer and an insulating material layer from bottom up, and the first conductive material layer fills the groove structure and covers the surface of the substrate; the insulating material layer, the second conductive material layer and the first conductive material layer are sequentially etched to form a bit line structure, in which a process of etching the first conductive material layer includes a first etching stage and a second etching stage, such that a bottom width of the first pattern structure located in the groove structure is not smaller than that of the first pattern structure located outside the groove structure.

Abstract: A method for hot swapping a memory includes the following: in response to a triggering operation of a replacement key of an abnormal memory, data on the abnormal memory is copied to an idle memory when a system is powered on; and the abnormal memory is powered off and replaced with a new memory after the data is copied; and in response to the triggering operation of a power on key of the new memory, the new memory is powered on. A method for hot swapping a memory in the case where a system is not powered off is provided.

Abstract: In a method for buffer insertion, a circuit to be processed and a plurality of insertion strategy parameters are determined; a target insertion strategy parameter is determined by calculating the plurality of insertion strategy parameters by using a preset population genetic model; and a target circuit is obtained by performing buffer insertion processing on the circuit to be processed according to the target insertion strategy parameter.

Abstract: A mechanical arm includes a body and an operating arm. The operating arm includes a connector connected to the body, as well as a first adapting part and a second adapting part which are connected to the connector. The first adapting part is configured to mount a first operating mechanism for opening and closing the socket. The second adapting part is configured to mount a second operating mechanism for grabbing and releasing a semiconductor device. After the first adapting part drives the first operating mechanism to open the socket, the second adapting part is able to drive the second operating mechanism to put the semiconductor device into the socket or take the semiconductor device out from the socket.

Abstract: A film layer curing apparatus includes: a support platform, configured to carry a substrate having a film layer on the substrate surface; and a light source component located above the support platform, the light source component including a light source array being arranged toward the support platform and covering the light outgoing surface of the entire film layer by projection of the light source array, the light source array including multiple point light sources evenly distributed on the light outgoing surface, light emitted by the light source array being able to uniformly irradiate the entire film layer so as to improve the thickness distribution uniformity of the film layer after curing.

Abstract: A mark detection method includes: acquiring on-off information of marks on a photomask to be manufactured; comparing the on-off information with preset on-off information to determine whether the on-off information is consistent with the preset on-off information; and, correcting the on-off information according to the preset on-off information when it is determined that the on-off information is inconsistent with the preset on-off information. The mark detection method and apparatus and the computer-readable storage medium according to the present disclosure can automatically detect whether the on-off of marks is accurate, thereby improving the detection accuracy and reducing labor cost.

Abstract: A circuit includes a delay generation circuit. The delay generation circuit is configured to generate a sub-grab signal for each of the storage areas based on an initial grab signal and data transmission delay of each of the storage areas, and generate a grab enable signal based on all the sub-grab signals. A time interval between a time when the read-write control circuit receives data transmitted from each of the storage areas by a global data line and a time when the read-write control circuit receives the sub-grab signal corresponding to the storage area satisfies a preset range. The read-write control circuit is configured to read out data of the global data line to a data bus based on the grab enable signal. Therefore, the tCCD of the DRAM is optimized.

Abstract: A method for manufacturing the semiconductor structure includes following operations. A base is provided. A plurality of stack structures spaced apart from each other along a first direction are formed on a surface of the base and a plurality of first isolation layers arranged between the plurality of stack structures are formed, the plurality of stack structures include a plurality of first interlayer dielectric layers, a plurality of initial active layers and a plurality of second interlayer dielectric layers. Portion of each initial active layer is etched to form a first trench in each initial active layer. A plurality of oxide semiconductor layers are formed in a plurality of first trenches. Portions of the plurality of oxide semiconductor layers and remaining portions of the plurality of initial active layers are etched to form a plurality of active structures arranged in an array along the first direction and a second direction.

Abstract: An adjustment method for the chip output characteristics can include the following steps. When adjusting the output characteristics of the chip to be tested, first it is determined whether the output characteristics of the chip to be tested have been adjusted according to the state of each E-fuse. When determining that the output characteristics of the chip to be tested have not been adjusted, the target adjustment solution corresponding to the chip is determined among a plurality of adjustment solutions in a targeted manner according to the output performance of the chip to be tested. The E-fuse in the chip to be tested is subjected to blowing treatment according to the target adjustment solution, so as to adjust the output characteristics of the chip to be tested.

Abstract: The present application relates to a wafer processing device and a wafer processing method. The wafer processing device includes: a spraying unit configured to spray a photoresist-removing solution to remove a photoresist; and a heating unit mounted to the spraying unit and configured to heat the photoresist-removing solution to a preset temperature. According to the wafer processing device and wafer processing method of the present application, the photoresist-removing solution is heated to a preset temperature, so that the photoresist-removing solution dissolves the photoresist more rapidly and thoroughly. Therefore, the photoresist may be removed from a surface of the wafer more thoroughly, and further a yield of the wafer is increased.

Abstract: Provided are a sampling measurement method and system, computer device and storage medium. The sampling measurement method includes: acquiring a preset measurement ratio of each process element in a process station; acquiring an actual measurement ratio of a process element associated with a lot of products to be measured that arrive at the measurement station in the process station; and, when the actual measurement ratio of the associated process element is less than the corresponding preset measurement ratio, controlling a measurement machine at the measurement station to measure the lot of products to be measured.

Abstract: A method for manufacturing the semiconductor structure includes: providing a substrate, in which active regions and isolation regions are formed; forming grooves in the active regions, which include first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves; and forming gate structures in the first grooves and the second grooves.

Abstract: A semiconductor structure includes a substrate, a bit line, and a first isolation layer. A groove is set in the substrate. A bottom end of the bit line is set in the groove. The first isolation layer is at least partially set on a sidewall of the bit line, and the first isolation layer is in direct contact with the bit line.

Abstract: A optical proximity effect correction method includes: fabricating a test pattern mask according to design rules of a target pattern; obtaining data required by an optical proximity effect correction model, and establishing the optical proximity effect correction model; obtaining line end shortening data of the test pattern, and establishing a line end shortening rule table; determining an initial correction value according to the line end shortening rule table; and correcting the target pattern according to the initial correction value and the optical proximity effect correction model.

Abstract: Embodiments provide a semiconductor device and a method of manufacturing the same. The method includes: providing a layer to be etched; forming a patterned first mask layer on the layer to be etched; and forming a patterned second mask layer formed on the layer to be etched, where the second mask layer and the first mask layer jointly define an opening, which exposes the layer to be etched; and etching the layer to be etched using the first mask layer and the second mask layer as masks, thus forming a pattern to be etched. The above-described method of manufacturing the semiconductor device allows the feature size of the first mask layer and the second mask layer to be relatively larger while keeping the device feature size the same, makes it possible to further reduce the feature size of the device.

Abstract: A semiconductor structure has a first area, a second area and a third area. The second area is arranged between the first area and the third area. The semiconductor structure includes: a substrate; a shallow trench isolation structure arranged in the substrate and configured to isolate the substrate into a plurality of active areas, in which the active areas in the first area form a semiconductor device; a dielectric layer arranged on the substrate; a through hole structure arranged in the third area and penetrating through the dielectric layer and the substrate; and a stress buffer structure arranged in the second area and including a first buffer doped area, in which the first buffer doped area is arranged in the active areas and formed by doping the active areas with a first buffer impurity.

Abstract: A storage system includes: a memory, configured to write or read a plurality of pieces of data during a read-write operation, the plurality of pieces of data being divided into M bytes, and each byte having N pieces of data; and an encoding circuit, configured to in the encoding stage, generate X first check codes based on the two or more pieces of data in each byte, generate Y second check codes based on all data of two or more bytes of the M bytes in the encoding stage, and generate a third check code based on the plurality of pieces of data, the X first check codes and the Y second check codes. The first check codes, the second check codes and the third check code are used to determine an error state of the plurality of pieces of data.

Abstract: Embodiments provide a method for packaging a semiconductor, a semiconductor package structure, and a package. The packaging method includes: providing a substrate wafer having a first surface and a second surface arranged opposite to each other, the first surface having a plurality of grooves, a plurality of electrically conductive pillars being provided at a bottom of the groove, and the electrically conductive pillar penetrating through the bottom of the groove to the second surface; providing a plurality of semiconductor die stacks; placing the semiconductor die stack in the groove; and filling an insulating dielectric in a gap between a sidewall of the groove and the semiconductor die stack to form an insulating dielectric layer covering an upper surface of the semiconductor die stack to seal up the semiconductor die stack so as to form the semiconductor package structure.

Abstract: The present application relates to a test circuit, comprising: M test units, each test unit having a first terminal and a second terminal, a first terminal of each test unit being connected to a power wire, a second terminal of each test unit being connected to a ground wire, M being a positive integer; each test unit comprises a TDDB test component, a switch, and a control circuit; the TDDB test component has a first equivalent resistance before being broken down, the TDDB test component has a second equivalent resistance after being broken down, and the first equivalent resistance is greater than the second equivalent resistance.

Abstract: The present application relates to the technical field of semiconductor manufacturing equipment, and provides a dust collection device. The dust collection device includes: an air inlet channel, a dust settling channel extending along a preset path, an airflow rotation channel surrounding the settling channel, an air outlet channel and a collection chamber, where one end of the airflow rotation channel is communicated with the dust settling channel, and the other end of the airflow rotation channel is communicated with the air outlet channel; an upstream end of the dust settling channel is communicated with the air inlet channel, and a downstream end of the dust settling channel is communicated with the collection chamber; and the height of the dust settling channel gradually decreases in an extension direction of the preset path.