Abstract: Provided are a semiconductor structure and a method for manufacturing the same. The method for manufacturing a semiconductor structure includes that a substrate is provided, and a first structure is formed on the substrate; a first supporting layer is formed, the first supporting layer covering the first structure; a second supporting layer is formed, the second supporting layer covering the first supporting layer; and the first supporting layer and the second supporting layer on an upper surface of the first structure, and the first supporting layer between the first structure and the second supporting layer are removed, a top surface of the second supporting layer being higher than the top surface of the first structure.

Abstract: A power consumption measurement assembly includes: at least two sampling modules respectively connected to a circuit to be measured in series; a gating module configured to gate one of the at least two sampling modules; an amplifying module configured to acquire and amplify a voltage signal across the gated sampling module; and a processing module connected to the gating module and the amplifying module and configured to: control and adjust the gated sampling module and an amplification of the amplifying module, calculate a power consumption value based on the amplified voltage signal and transmit the power consumption value.

Abstract: Embodiments of the present application provide a readout circuit layout structure, a readout circuit, and a memory layout structure. The readout circuit layout structure includes: a readout amplification module, a first processing module, and a second processing module arranged along a preset direction, wherein the readout amplification module is configured to read a voltage of a bit line, and the first processing module and the second processing module are at least configured to perform a noise cancellation on an output signal of the readout amplification module. The readout amplification module includes: a first NMOS region and a first PMOS region arranged close to the first processing module, and a second NMOS region and a second PMOS region arranged close to the second processing module, the first NMOS region, the first PMOS region, the second PMOS region, and the second NMOS region being arranged along the preset direction.

Abstract: The present application relates to the field of semiconductor technologies, and discloses a semiconductor structure and a formation method thereof. The method includes: providing a semiconductor substrate, the semiconductor substrate including a TSV; forming a dielectric layer on a surface of the semiconductor substrate, the dielectric layer being provided with an embedded metal landing pad; and etching the dielectric layer to form a communication hole for communicating the TSV with the metal landing pad.

Abstract: A method for adjusting margin, a circuit for adjusting margin, and a memory are provided. The method is applicable for a memory including a plurality of delay sub-circuits. The method includes: determining a voltage parameter and a temperature parameter, obtaining a target delay value by performing calculation on the voltage parameter and the temperature parameter through a preset time margin model; and adjusting a time margin of the memory by controlling working states of the plurality of delay sub-circuits according to the target delay value.

Abstract: A sense amplifier (SA), a memory and a control method are provided. The SA includes an amplifying module, configured to amplify voltage difference between a BL and a BLB when the SA is in an amplifying stage; a controllable power module, connected to the amplifying module and configured to stop providing power to the amplifying module when the SA is in a writing stage, to enable the amplifying module to stop working; and a writing module, connected to the BL and the BLB and configured to pull the voltage difference between the BL and the BLB according to data to be written when the SA is in the writing stage. The solution may ensure the successful data writing in a storage unit in a case that a writing circuit has weak drive capability.

Abstract: The present disclosure provides an integrated circuit memory and the method of forming the same, the memory includes: a substrate; a conducting line group, formed on the substrate, and including a plurality of conducting lines sequentially arranged along a first direction, each conducting line extending in a second direction, and ends of two adjacent conducting lines on a same side being staggered from each other in the second direction; and a plurality of contact pads, formed on the substrate, one of the contact pads being connected to an end of one conducting line, and two adjacent contact pads located on the same side being staggered in the second direction.

Abstract: Provided are a test circuit, a test device and a test method thereof. The test circuit includes: a signal processing module configured to receive a pulse signal to be tested and output a processing signal under a control signal; a sampling module connected to the output terminal of signal processing module and configured to receive the processing signal and generate a sampling signal according to the processing signal. The sampling signal includes a first sampling pulse and a second sampling pulse, the first sampling pulse and the second sampling pulse have a pulse width difference, the pulse width difference is equal to the pulse width of the pulse signal.

Abstract: The present disclosure provides a processing method for semiconductor surface defects and a preparation method for semiconductor devices. The processing method for semiconductor surface defects includes: placing a semiconductor device in a plasma processing device, the semiconductor device comprising a semiconductor substrate and deposition layers formed on the surface of the semiconductor substrate, bubbles being formed in the deposition layers; and plasma bombarding the surface of the deposition layer to break the bubbles, so that the surface of the deposition layer is flat.

Abstract: A manufacturing method for capacitor structure includes: forming a dielectric layer on a first electrode, wherein the dielectric layer includes metal oxide layers doped with preset oxides, and part of the preset oxide and a metal oxide share oxygen atoms; and forming a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer and the second electrode constitute a capacitor structure.

Abstract: A cleaning system is integrated in an exposure machine including an immersion cover and a workbench arranged to be movable in translation below immersion cover. The cleaning system includes an image acquisition component, a cleaning component, and a controller. The image acquisition component is configured to acquire image information of a through hole of immersion cover. The cleaning component includes a cleaning pipe disposed inside workbench and having a first end extending out of a top surface of workbench, and a vacuum pump connected to a second end of cleaning pipe. The controller is configured to judge whether through hole is blocked according to image information, control workbench to be moved in translation so that first end of cleaning pipe is located directly below blocked through hole, and control vacuum pump to apply a negative pressure to blocked through hole through cleaning pipe to clean immersion cover.

Abstract: The present application relates to a chip test method and apparatus, a computer device, and a readable storage medium thereof. The chip test method includes: applying a test signal to a to-be-tested chip; and sending a data signal to the to-be-tested chip such that the to-be-tested chip enters a test mode based on the test signal and the data signal, and regulating a test voltage of the to-be-tested chip.

Abstract: An amplification control method and circuit, a sensitive amplifier and a semiconductor memory are provided. The method includes that: a preset instruction is received, and an isolation power value and a control instruction signal are determined according to the preset instruction; an isolation control signal is generated according to the isolation power value and the control instruction signal; and an amplification circuit receives the isolation control signal and a target signal to be processed according to the preset instruction, and processes the signal to be processed and completes the preset instruction.

Abstract: Provided is an electrostatic discharge protection device, including: a darlington structure formed in a substrate, and a diode string formed in the substrate and including a plurality of diodes connected in series. A first end of the darlington structure is connected to a first voltage, and a second end of the darlington structure is connected to a second voltage. An anode of the diode string is connected to a third end of the darlington structure. A cathode of the diode string is connected to the second voltage.

Abstract: A preparation method of the semiconductor structure includes: providing a substrate including a core device region and an anti-fuse device region; forming a first dielectric layer covering the core device region and the anti-fuse device region; forming a second dielectric layer covering the first dielectric layer and having a dielectric constant larger than a dielectric constant of the first dielectric layer; removing the second dielectric layer on the anti-fuse device region; and forming a conductive layer covering the first dielectric layer on the anti-fuse device region and the second dielectric layer on the core device region.

Abstract: A cleanup system for the semiconductor storage shelf is provided. A semiconductor storage shelf is provided with a plurality of stalls. The cleanup system for the semiconductor storage shelf includes a conveying device and a cleanup device. The cleanup device is configured to clean up each stall of the semiconductor storage shelf. The cleanup device is detachably connected to the conveying device. The conveying device is configured to convey the cleanup device to each stall of the semiconductor storage shelf.

Abstract: Embodiments of the present application provide a semiconductor structure that comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface, a solder pad located at the first surface, a heat transfer layer located at the first surface and being in contact with the solder pad, and a groove located in the semiconductor substrate and being connected to the heat transfer layer.

Abstract: The present disclosure provides a sense amplification structure and a memory architecture. The sense amplification structure includes: a first PMOS transistor provided with a gate connected to a second readout bit line and a source connected to a first signal terminal; a first NMOS transistor provided with a gate connected to an initial bit line; a drain of the first PMOS transistor and a drain of the first NMOS transistor being connected to a first complementary readout bit line; a second PMOS transistor provided with a gate connected to the second complementary readout bit line; a second NMOS transistor provided with a gate connected to an initial complementary bit line and a source connected to a second signal terminal; a drain of the second PMOS transistor and a drain of the second NMOS transistor being connected to the first readout bit line.

Abstract: The present disclosure relates to the technical field of semiconductor packaging, and discloses a semiconductor structure and a method for forming the same. The method includes: providing a chip, the chip having interconnect structures on its surface, the top of the interconnect structures having an exposed fusible portion; providing a substrate, the substrate having conductive structures on its surface; patterning the conductive structures so that edges of the conductive structures have protrusions; combining the chip with the substrate.

Abstract: A clock circuit and a memory are provided. The clock circuit includes a data strobe clock circuit and a system clock circuit. The data strobe clock circuit is configured to receive and transmit a data strobe clock signal, the data strobe clock signal is used for controlling at least one of receiving or sending of a data signal. The system clock circuit is configured to receive and transmit a system clock signal, the system clock signal is used for controlling receiving of a command signal. The system clock circuit includes at least two first signal transmission paths, and is configured to transmit the system clock signal via different first signal transmission paths in the at least two first signal transmission paths based on at least one of: different receiving rates, or different sending rates of the data signal.