Abstract: Disclosed herein is a memory module that includes a module substrate, data connectors, memory devices, and data register buffers. A first main surface of the module substrate has first and second memory mounting areas. One of the first and second main surfaces of the module substrate has a register mounting area located between the first and second memory mounting areas in a planner view. The memory devices include a plurality of first memory devices that are mounted on the first memory mounting area and a plurality of second memory devices that are mounted on the second memory mounting area. The data register buffers are mounted on the register mounting area. The data register buffers transfers write data supplied from the data connectors to the memory devices, and transfers read data supplied from the memory devices to the data connectors.

Abstract: Disclosed herein is a memory module that includes a plurality of command address connectors formed on the module substrate, a plurality of memory devices mounted on the module substrate, and a plurality of command address register buffers mounted on the module substrate. The command address connectors receive a command address signal from outside. The memory devices include a plurality of first memory devices and a plurality of second memory devices. The command address register buffers include a first command address register buffer that supplies the command address signal to the first memory devices and a second command address register buffer that supplies the command address signal to the second memory devices.

Abstract: A method of manufacturing a semiconductor device, comprising preparing a wiring substrate and mounting a first rectangular semiconductor chip having plural of first electrodes arranged along short sides thereof on the wiring substrate. A second rectangular semiconductor chip having plural of second electrodes arranged along short sides thereof is stacked on the first semiconductor chip so that the short sides of the second semiconductor chip are perpendicular to the short sides of the first semiconductor chip and that gaps are formed between the wiring substrate and short side portions of the second semiconductor chip. The method further comprises filling the gaps with a first resin from locations near long sides of the second semiconductor chip in a direction parallel to the short sides of the second semiconductor chip. The first and the second electrodes are connected to connection pads of the wiring substrate by first and second wires, respectively.

Abstract: Disclosed herein is a method of manufacturing a semiconductor device that includes stacking a plurality of semiconductor chips to form a first chip laminated body, providing an underfill material to fill gaps between the semiconductor chips so that a fillet portion is formed around the first chip laminated body, and trimming the fillet portion to form a second chip laminated body.

Abstract: The semiconductor device includes a plurality of word lines classified into a plurality of groups and a selection circuit for selecting a word line according to an address. The selection circuit has a level shifter arranged for each of the groups. The address includes a first address for selecting any of the groups and a second address for selecting a word line in the selected group. The selection circuit selects a word line by allowing supply of active potential for word line by the level shifter of a group selected by the first address and further allowing supply of the active potential to the word line selected by the second address out of a plurality of word lines belonging to the selected group.

Abstract: In a semiconductor device, the thickness of an insulating film formed in a through hole is reduced, while an annular groove having an insulating material embedded therein is provided so as to ensure a sufficient total thickness of the insulator, whereby a through silicon via is provided with an insulating ring which is improved in both processability and functionality.

Abstract: Disclosed herein is a device that includes a first wiring provided as a first-level wiring layer and elongated in a first direction; and a first wiring pad provided as the first-level wiring layer, the first wiring pad being rectangular and including a first side edge that is elongated in the first direction and a second side edge that is elongated in a second direction crossing to the first direction, the first side edge being greater in length than the second side edge, the first wiring pad being greater in length in the second direction than the first wiring.

Abstract: A semiconductor device includes a pair of electromagnetically coupled inductors. Each of the inductors is comprised of a plurality of through electrodes which extend through a semiconductor substrate, and wires which connect the plurality of through electrodes in series.

Abstract: A semiconductor device may include, but is not limited to, a first signal line, a second signal line, and a first shield line. The first signal line is supplied with a first signal. The first signal is smaller in amplitude than a potential difference between a power potential and a reference potential. The second signal line is disposed in a first side of the first signal line. The second signal line is supplied with a second signal. The second signal is smaller in amplitude than the potential difference. The first shield line is disposed in a second side of the first signal line. The second side is opposite to the first side. The first shield line reduces a coupling noise that is applied to the first shield line from the second side.

Abstract: A semiconductor device according to the present invention has an address scrambling circuit for performing address scrambling operation of an address and a redundancy judging circuit for judging that redundancy judgment is performed about the address scrambled by the address scrambling circuit. This structure makes it possible to completely refresh operation concerned with normal word lines and redundancy word lines.

Abstract: A semiconductor device includes a semiconductor substrate having first and second regions, a first pillar transistor, and a second pillar transistor, wherein the first pillar transistor comprises a first semiconductor pillar disposed in the first region, and a first gate electrode covering a side surface of the first semiconductor pillar, wherein the second pillar transistor comprises a second semiconductor pillar disposed in the second region, and a second gate electrode covering a side surface of the second semiconductor pillar, wherein the first gate electrode is different in height from the second gate electrode, and the first and second pillar transistors form a CMOS device.

Abstract: To provide a memory array for information bit that stores information bits, a memory array for check bit that stores check bits, a correction circuit that, in response to a write request, reads the information bit and the check bit corresponding to a write address from the respective memory arrays and corrects an error included in the information bit, and a mixer temporarily holding information bit corrected by the correction circuit. The mixer overwrites only a part of bytes of the held information bits with write data according to a byte mask signal. Accordingly, a capacity required for the memory array for check bit can be reduced while the byte mask function is maintained.

Abstract: A device has a first substrate having a first surface; a first electrode pad arranged on the first surface of the first substrate; a first insulator film provided on the first surface of the first substrate so that the first electrode pad is exposed; a first bump electrode provided on the first electrode pad and having a first diameter; and a second bump electrode provided on the first insulator film and having a second diameter smaller than the first diameter.

Abstract: A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V2 from a first voltage V1; and a control circuit that generates the current control signal OVDR, makes a current that is flowed by the current mirror increase by a first transition of the current control signal OVDR, and makes the current that is flowed by the current mirror decrease by a second transition of the current control signal OVDR. The control circuit includes a slew-rate processing unit that makes a second slew rate of the current control signal OVDR related to the second transition be smaller than a first slew rate of the current control signal OVDR related to the first transition.

Abstract: A method for forming a DRAM MIM capacitor stack comprises forming a first electrode layer, annealing the first electrode layer, forming a dielectric layer on the first electrode layer, annealing the dielectric layer, forming a second electrode layer on the dielectric layer, annealing the second electrode layer, patterning the capacitor stack, and annealing the capacitor stack for times greater than about 10 minutes, and advantageously greater than about 1 hour, at low temperatures (less than about 300 C) in an atmosphere containing less than about 25% oxygen and preferably less than about 10% oxygen.

Abstract: Disclosed herein is a device that includes a first semiconductor chip outputting a read command and a clock signal, a plurality of second semiconductor chips stacked to the first semiconductor chip, and a signal path electrically connected between the first and second semiconductor chips. Each of the second semiconductor chips performs a read operation to read out a data signal stored therein in response to the read command. Each of the second semiconductor chips includes a counter circuit performing a count operation in response to the clock signal to generate a count signal, and an output control circuit outputs the data signal to the signal path when the count signal indicates a predetermined value. The predetermined values of the second semiconductor chips are different from one another.

Abstract: A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high k phase of a subsequently deposited dielectric layer. The high k dielectric layer comprises a doped material that can be crystallized after a subsequent annealing treatment. An amorphous blocking is formed on the dielectric layer. The thickness of the blocking layer is chosen such that the blocking layer remains amorphous after a subsequent annealing treatment. A second electrode layer compatible with the blocking layer is formed on the blocking layer.

Abstract: A method for doping a dielectric material by pulsing a first dopant precursor, purging the non-adsorbed precursor, pulsing a second precursor, purging the non-adsorbed precursor, and pulsing a oxidant to form an intermixed layer of two (or more) metal oxide dielectric dopant materials. The method may also be used to form a blocking layer between a bulk dielectric layer and a second electrode layer. The method improves the control of the composition and the control of the uniformity of the dopants throughout the thickness of the doped dielectric material.

Abstract: A method for doping a dielectric material by pulsing a first dopant precursor, purging the non-adsorbed precursor, pulsing a second precursor, purging the non-adsorbed precursor, and pulsing a oxidant to form an intermixed layer of two (or more) metal oxide dielectric dopant materials. The method may also be used to form a blocking layer between a bulk dielectric layer and a second electrode layer. The method improves the control of the composition and the control of the uniformity of the dopants throughout the thickness of the doped dielectric material.

Abstract: A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode.