Abstract: To provide a semiconductor device including a pair of antifuse elements at either a high level or a low level, an OR circuit that outputs different logic information for a case that at least one of the antifuse elements is at a high level and a case that both of the antifuse elements are at a low level, and an exclusive OR circuit that outputs different logic information for a case that the logic states are different from each other and a case that they are same as each other.

Abstract: A semiconductor device includes: a semiconductor substrate; a silicon pillar provided perpendicularly to a main surface of the semiconductor substrate; a gate dielectric film that covers a portion of a side surface of the silicon pillar; an insulator pillar that covers remaining portions of the side surface of the silicon pillar; a gate electrode that covers the silicon pillar via the gate dielectric film and the insulator pillar; an interlayer dielectric film provided above the silicon pillar, the gate dielectric film, the insulator pillar, and the gate electrode; and a gate contact plug embedded in a contact hole provided in the interlayer dielectric film, and in contact with the gate electrode and the insulator pillar. A film thickness of the insulator pillar in a lateral direction is thicker than a film thickness of the gate dielectric film in a lateral direction.

Abstract: A semiconductor device comprises a bit line transmitting a signal to be sensed, a single-ended sense amplifier sensing and amplifying the signal transmitted from the bit line to the input node, and a reference voltage supplying circuit outputting a reference voltage. The sense amplifier includes a first transistor for charge transfer between the bit line and an input node, and the voltage value of the reference voltage is controlled in association with a threshold voltage of the first transistor. The reference voltage is set to a first logical value of the transfer control signal which controlled to be first and second logical values.

Abstract: Memory arrays ARY0 and ARY1 each include a regular area 108 and spare area 110. Fuse circuits FS0 and FS1 each store a relief address. Relief determination circuits RJ0 and RJ1 are provided so as to correspond to the fuse circuits FS0 and FS1, respectively. The relief determination circuits RJ0 and RJ1 each determine whether a designation address is the relief address or not. An access control circuit AC specifies an access destination from the memory array ARY0 or ARY1 according to the determination results. When it is determined by the relief determination circuit RJ0 that the designation address corresponds to the relief address, the access control circuit AC selects one of the memory arrays ARY0 and ARY1 according to CX13T<1:0> and selects the spare area 110 included in the selected memory array ARY as an access target.

Abstract: A semiconductor device compares potential AF_G at an end of an anti-fuse element with potential VPPR. If potential AF_G is equal to or higher than potential VPPR, then the semiconductor device boosts potential VPPSVT of a power supply line that is connected to the end of the anti-fuse element. If the of the anti-fuse element and the other end thereof are connected to each other by the boosted potential, thereby making potential AF_G lower than potential VPPR, then the semiconductor device stops boosting potential VPPSVT.

Abstract: For example, four driver transistors are arranged in wells so as to adjoin both sides of each of two element isolation regions. Two pairs of cross-coupled sense transistors are arranged in the wells at positions farther from the element isolation regions than the driver transistors are. Such an arrangement provides more than a certain distance between the sense transistors and the respective corresponding element isolation regions. This reduces the effect of a phenomenon that threshold of a transistor varies according to a distance from an element isolation region. As a result, it is possible to exactly match the characteristics of each pair of cross-coupled transistors.

Abstract: A memory module includes a plurality of memory chips, a plurality of data register buffers, and a command/address/control register buffer mounted on a module PCB. The data register buffers perform data transfers with the memory chips. The command/address/control register buffer performs buffering of a command/address/control signal and generates a control signal. The buffered command/address/control signal is supplied to the memory chips, and the control signal is supplied to the data register buffers. According to the present invention, because line lengths between the data register buffers and the memory chips are shortened, it is possible to realize a considerably high data transfer rate.

Abstract: Disclosed herein is a semiconductor device that includes a first transistor unit coupled to the data terminal, and a plurality of second transistor units coupled to the calibration terminal. The first transistor unit includes a plurality of first transistors having a first conductivity type connected in parallel to each other so that an impedance of the first transistor unit is adjustable. Each of the second transistor units includes a plurality of second transistors having the first conductivity type connected in parallel to each other so that an impedance of each of the second transistor units is adjustable. The semiconductor device further includes an impedance control circuit that reflects the impedance of each of the second transistor units to the first transistor unit.

Abstract: The invention provides a method of manufacturing a semiconductor device, capable of forming, on a silicon layer, a nickel mono-silicide layer having a low resistance value and a desirable flatness. The method includes depositing a platinum-containing nickel layer that covers the silicon layer formed on the substrate, and that has crystallinity lower in a portion thereof close to the silicon layer than in a portion remote from the silicon layer, and forming a nickel mono-silicide layer at the interface between the silicon layer and the platinum-containing nickel layer by heating the substrate.

Abstract: Disclosed herein is a device that a device including first data lines transmitting a plurality of sequential first data bits, respectively, second data lines transmitting a plurality of sequential second data bits, respectively, third data lines transmitting a plurality of sequential third data bits, respectively, a BOC circuit rearranging order of the plurality of first data bits supplied from the plurality of first data lines in accordance with address information, the BOC circuit supplying the resultant to the plurality of second data lines as the plurality of second data bits, and a DBI circuit performing inversion or non-inversion of the plurality of second data bits supplied from the plurality of second data lines independently of each other in accordance with a predetermined condition, the DBI circuit supplying the resultant to the plurality of third data lines as the plurality of third data bits.

Abstract: The semiconductor device comprises an output circuit that includes a plurality of unit buffer circuits each of which has an adjustable impedance, a control circuit that selectively activates one or ones of the unit buffer circuits, and an impedance adjustment unit that adjusts the impedances of the unit buffer circuits and includes a power line, a replica circuit, which has a replica impedance that is substantially equal to the adjustable impedance of each of the unit buffer circuits, and a load current generation circuit, which changes current flowing therethrough in accordance with the number of activated the one or ones of the unit buffer circuits. The replica circuit and the load current generation circuit are connected in common to the power line.

Abstract: A semiconductor memory device includes a writing circuit and a reading circuit. The writing circuit executes a setting action for converting a resistance of a variable resistance element to a low resistance by applying current from one end side to the other end side of a memory cell via the variable resistance element, and a resetting action for converting the resistance to a high resistance by applying current from the other end side to the one end side via the variable resistance element. The reading circuit executes a first reading action for reading a resistance state of the variable resistance element by applying current from one end side to the other end side of the memory cell via the variable resistance element, and a second reading action for reading the resistance state by applying current from the other end side to the one end side via the variable resistance element.

Abstract: To provide a semiconductor memory device comprising a plurality of silicon pillars arranged in a matrix, whose sidewalls are provided with gate electrodes with gate insulating films interposed between the silicon pillars and the gate electrodes and whose top ends are electrically connected to memory elements, and a bit line and a word line provided between the silicon pillars so as to be orthogonal to each other. The bit line is electrically connected to a bottom end of the silicon pillars on both sides of the bit line in alternate rows, and the word line is electrically connected to a gate electrode formed on a sidewall of the silicon pillars on both sides of the word line in alternate columns.

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

Abstract: A semiconductor device includes low voltage and high voltage transistors over a substrate. The low voltage transistor is configured by at least one unit transistor. The high voltage transistor is configured by a greater number of the unit transistors than the at least one unit transistor that configures the low voltage transistor. Each of the unit transistors may include a vertically extending portion of semiconductor providing a channel region and having a uniform height, a gate insulating film extending along a side surface of the vertically extending portion of semiconductor, a gate electrode separated by the gate insulating film from the vertically extending portion of semiconductor, and upper and lower diffusion regions being respectively disposed near the top and bottom of the vertically extending portion of semiconductor. The greater number of the unit transistors are connected in series to each other and have gate electrodes eclectically connected to each other.

Abstract: A device includes first through third logic circuits. Each of first and second logic circuits includes a first circuit portion generating a first output signal in response to a first input signal when a second input signal takes a first logic level, and a second circuit portion transferring the first input signal to output the first output signal when the second input signal takes a second logic level. The third logic circuit includes a third circuit portion generating a second output signal in response to the first output signal supplied from the first logic circuit when the first output signal supplied from the second logic circuit takes a third logic level, and a fourth circuit portion generating the second output signal in response to the first output signal supplied with the first logic circuit when the first output signal supplied from the second logic circuit takes a fourth logic level.

Abstract: Disclosed herein is a logic circuit that includes a transistor T1 coupled between VPERI and a node n1, a transistor T2 coupled between VPERI and a node n2, a transistor T3 coupled between VSS and a node n3, a transistor T4 coupled between VSS and a node n4, transistors T5 and T7 coupled in series between the nodes n1 and n3, transistors T9 and T11 coupled in series between the nodes n1 and n3, transistors T6 and T8 coupled in series between the nodes n2 and n4, and transistors T10 and T12 coupled in series between the nodes n2 and n4. An output signal Y is output from a connection point of the transistors T5 and T7 and a connection point of the transistors T6 and T8.

Abstract: Disclosed herein is a device that includes first and second buffer circuits electrically connected to a terminal and an output control circuit activating the first buffer circuit and deactivating the second buffer circuit in a first state and activating one of the first and second buffer circuits and deactivating the other of the first and second buffer circuits based on input data in a second state. The output control circuit is brought into one of the first and second states.

Abstract: Disclosed herein is a device that includes a first buffer circuit coupled between a first power supply line and a data terminal and a second buffer circuit coupled between a second power supply line and the data terminal. First and second internal data signals complementary to each other are supplied to a level shifter, thereby third and fourth internal data signals complementary to each other are generated by changing amplitude values of the first and second internal data signals. The first and the second buffer circuits are controlled based on the third and fourth internal data signals such that one of the first and second buffer circuits turns on and the other of the first and second buffer circuits turns off.

Abstract: A semiconductor device is disclosed in which a plurality of memory cores are provided on a semiconductor chip. Each of the memory cores comprises: first and second circuit regions and a first and second through electrode groups. a first power supply is supplied in the first circuit region in which a data bus for parallel data is driven, and a second power supply separated from the first power supply is supplied in the second circuit region in which the parallel data and serial data are bidirectionally converted. The first through electrode group includes through electrodes supplying the first power supply to the first circuit region, and the second through electrode group includes through electrodes supplying the second power supply to the second circuit region.