Abstract: A substrate structure, a method for manufacturing a substrate structure, a light-emitting device and a method for manufacturing a light-emitting device are provided. The substrate structure may include a base, a mask layer, and an epitaxial structure. The mask layer is provided on the base, where the mask layer is provided with an opening for exposing the base. The epitaxial structure is provided in the opening, where a material of the mask layer is different from a material of the epitaxial structure.

Abstract: A semiconductor structure includes: a stacked structure, including one stacked structure unit or a plurality of stacked structure units disposed along a horizontal direction, where each of the stacked structure units includes a plurality of stacked island structures separated from each other along the horizontal direction; and an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially laminated on the stacked structure. In the present disclosure, by providing the stacked structure, the light-emitting efficiency of the semiconductor device can be improved.

Abstract: A semiconductor structure and a manufacturing method therefor are provided by embodiments of the present application. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buffer layer and a second buffer layer. By doping a transition metal in the first buffer layer, a deep level trap may be formed to capture background electrons, and diffusion of free electrons toward the substrate may also be avoided. In the second buffer layer, by decreasing a doping concentration of the transition metal or not doping intentionally the transition metal, a tailing effect is avoided and current collapse is prevented. By doping periodically C in the buffer layer, C may be as an acceptor impurity to compensate the background electrons, and then a concentration of the background electrons is reduced.

Abstract: The present application provides a substrate and a manufacturing method therefor. The substrate includes a silicon substrate and a protective layer, the silicon substrate includes a middle part and an edge part, and a thickness of the middle part is greater than a thickness of the edge part. The middle part has a to-be-grown surface, and a crystal orientation of the to-be-grown surface is different from a crystal orientation of surface of the edge part. The protective layer covers the edge part and is configured to prevent defects in the edge part from extending to the middle part during high-temperature processing.

Abstract: A manufacturing method of a vertical cavity surface emitting laser is provided. The vertical cavity surface emitting laser includes a first reflector, a first semiconductor layer, an active layer, a second semiconductor layer, an oxide layer, and a second reflector sequentially stacked. The conductivity type of the first semiconductor layer is opposite to that of the second semiconductor layer. The oxide layer includes a light transmitting region and a light shielding region, and the light shielding region surrounds the light transmitting region. The manufacturing method includes planarizing a first contact surface of the first semiconductor layer and the first reflector, and/or a second contact surface of the second semiconductor layer and the second reflector.

Abstract: The present application provides a semiconductor structure and a manufacturing method therefor, and a light-emitting device and a manufacturing method therefor. The semiconductor structure includes a substrate, a first semiconductor layer, an isolation layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The second semiconductor layer is a conductive DBR structure. The first semiconductor layer includes a flat portion, a first protrusion and a second protrusion stacked sequentially in a vertical direction, the second protrusions correspond one-to-one to the first through-holes, and the second protrusions are arranged at intervals, and the side surface of the second protrusions are beveled. The active layer, the second semiconductor layer, and the first electrode are provided on the second protrusions of the first semiconductor layer stacked in sequence.

Abstract: Disclosed are an enhancement-mode switching device and a preparation method therefor. The enhancement-mode switching device includes: a substrate; a channel structure; an n-type semiconductor layer covering a bottom wall of the trench; a p-type semiconductor layer arranged in a gate region; a gate electrode arranged on a side, away from the substrate, of the p-type semiconductor layer; a source electrode arranged in a source region; a drain electrode arranged in a drain region. In the gate region, the p-type semiconductor layer and n-type semiconductor layer are in contact with each other to form a space depletion region in the gate region, and the electronic channel between the source electrode and the drain electrode of the switching device is interrupted, so that the switching device may be effectively turned off under a gate bias voltage of zero, improving control capability of the gate electrode and reliability of the device.

Abstract: The present disclosure provides enhancement mode switching devices and manufacturing methods thereof. The enhancement mode switching device includes a substrate; a channel structure including a channel layer and a barrier layer. The channel layer is provided on the substrate, and the barrier layer is provided on a side of the channel layer far away from the substrate. A side of the channel structure far away from the substrate is provided with a trench in a gate region, and the trench penetrates through the barrier layer and a part of the channel layer. The enhancement mode switching device includes a p-type semiconductor layer in the gate region, a gate electrode on a side of the p-type semiconductor layer far away from the substrate, a source electrode in the source region, and a drain electrode in the drain region. At least part of the p-type semiconductor layer is in the trench.

Abstract: A semiconductor structure and a manufacturing method thereof are provided in the present application provides. The semiconductor structure includes a substrate and a heterojunction structure located on the substrate. The heterojunction structure includes a channel layer and a barrier layer located on the channel layer. The channel layer includes at least one n-type doped layer. The manufacturing method of the semiconductor structure includes: providing a substrate; forming a heterojunction structure on the substrate, where forming the heterojunction structure includes: forming a channel layer on the substrate, doping the channel layer to form an n-type doped layer; forming a barrier layer on the channel layer; forming a gate electrode, a source electrode and a drain electrode, the gate electrode is located on the heterojunction structure, and the source electrode and the drain electrode are located on two sides of the grid electrode, separately.

Abstract: The present disclosure provides a full-color LED structure, a full-color LED structure unit, and a method for manufacturing the same. Different wavelengths of light emitted from the first sub-region, the second sub-region and the third sub-region of the light-emitting layer are achieved by controlling different surface dimensions of the bottom wall and the side wall of the first trench or the top wall of the first semiconductor layer. The above process is simple and can form full-color LED structure units during a single epitaxial growth process of the light-emitting layer, such that the size of the full-color LED is reduced, the cost is reduced, the service life is extended, and the reliability is improved.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure, the mothed including: providing a substrate, a heterojunction structure, and a P-type semiconductor layer, which are distributed from bottom to top; forming a patterned mask layer on the P-type semiconductor layer, the patterned mask layer covering at least a portion of the P-type semiconductor layer in a gate region; removing an exposed portion of the P-type semiconductor layer by in-situ etching with a corrosive gas, by using the patterned mask layer as a mask; and then activating the P-type dopant ions in the P-type semiconductor layer.

Abstract: The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.

Abstract: The disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first group III nitride epitaxial layer disposed on a support substrate, a silicon substrate, a bonding layer and a second group III nitride epitaxial layer; wherein the first group III nitride epitaxial layer is bonded to the silicon substrate by the bonding layer; through-silicon-vias are formed in the silicon substrate, and first through-holes are formed in the bonding layer, wherein the through-silicon-vias communicate with the first through-holes; and the second group III nitride epitaxial layer is disposed within the first through-holes and the through-silicon-vias and on the silicon substrate, wherein the second group III nitride epitaxial layer is coupled to the first group III nitride epitaxial layer.

Abstract: Disclosed are a light emitting device and a method for manufacturing a light emitting device. The light emitting device according to the present application may be formed by an epitaxial growth process. In addition, the light emitting device according to the present application includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. Light emitting wavelengths of the first region, the second region and the third region are different by setting composition of the light emitting layer of the top walls of the plurality of protrusions, the side walls of the plurality of protrusions and the recessed region between the plurality of protrusions to be different, therefore, the light-emitting device may emit light of different wavelengths without using phosphors or quantum dots for wavelength conversion, thereby prolonging the lifespan of the light-emitting device and improving the reliability of the light-emitting device.

Abstract: A multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) and a manufacturing method therefor. The multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) comprises: a first semiconductor layer (11), a stress release layer (12) having a V-shaped pit (12a), a first quantum well layer (131) and a second quantum well layer (132), which are stacked, from bottom to top, on a side wall of the V-shaped pit (12a) and a top wall of the stress release layer (12), and a second semiconductor layer (14) that is located on the second quantum well layer (132), wherein the conduction type of the second semiconductor layer (14) is the opposite of that of the first semiconductor layer (11).

Abstract: The present application provides an LED structure and a GaN-based substrate thereof, and a method for manufacturing a GaN-based substrate. The GaN-based substrate includes: a patterned base including a plurality of depressions and a plurality of protrusions; a metal Ga layer located at the plurality of depressions; and a second semiconductor layer located on the metal Ga layer and the plurality of protrusions exposed by the metal Ga layer, where a material for the second semiconductor layer is a GaN-based material. When the LED light-emitting structure is formed on the GaN-based substrate, light emitted by the LED light-emitting structure, after being reflected via the metal Ga layer, can emit from an upper surface or a side surface of the LED light-emitting structure, which reduces the light absorption and further improves the light-emitting efficiency of the LED light-emitting structure.

Abstract: A semiconductor light-emitting device and a manufacturing method for same. The manufacturing method for the semiconductor light-emitting device comprises: forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate; performing epitaxial growth on the substrate using the dielectric layer as a mask to form first reflectors in the openings of the dielectric layer; growing a light-emitting structure on the side of each first reflector away from the substrate; and forming a second reflector on the side of the light-emitting structure away from the first reflector. The manufacturing process can be simplified.

Abstract: Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first A1N layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first A1N layer. By the method, the first A1N layer and the first AlGaN layer respectively correspond to a nucleation layer and a buffer layer when the function layer is epitaxially grown, to improve the quality of the function layer.

Abstract: LED structures and methods of manufacturing LED structure are provided. The LED structure includes: an LED light-emitting cell, including a first semiconductor layer, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer; a stress adjusting structure surrounding the LED light-emitting cell and applying stress to a sidewall of the LED light-emitting cell, where a lattice constant of a material of the stress adjusting structure is greater than lattice constants of materials in the LED light-emitting cell.

Abstract: Disclosed are an LED structure and a preparing method of an LED structure. The LED structure includes: an LED light emitting unit including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are stacked; and a first stress layer surrounding the LED light emitting unit and covering a side wall of the LED light emitting unit. In the present disclosure, the first stress layer is configured to apply a stress to the side wall of the LED light emitting unit, adjust a wavelength of the LED structure, and improve a wavelength uniformity of the LED structure. In addition, since a side wall of the LED structure is extruded, and a luminous efficiency of the LED structure is effectively improved.