Abstract: In some embodiments, a power supply slew rate detector may include a filter circuit having a capacitive element operably coupled to a power supply output provided to a flash memory circuit and a resistive element operably coupled to the capacitive element and to ground, and a Schmitt trigger including an input operably coupled to a node between the capacitive element and the resistive element, the Schmitt trigger further including an output configured to indicate a slew rate of the power supply output.

Abstract: There is provided a processor for use in a computing system, said processor including at least one Central Processing Unit (CPU), a cache memory coupled to the at least one CPU, and a control unit coupled to the cache memory and arranged to obscure the existing data in the CPU cache memory, and assign control of the CPU cache memory to at least one other entity within the computing system. There is also provided a method of using a CPU cache memory for non-CPU related tasks in a computing system.

Abstract: An embodiment of a method of fabricating a diode having a plurality of regions of a first conductivity type and a buried region of a second conductivity type includes performing a first dopant implantation procedure to form the buried region, performing a second dopant implantation procedure to form an intermediate region of the plurality of regions, and performing a third dopant implantation procedure to form a contact region of the plurality of regions. The second and third dopant implantation procedures are configured such that the intermediate region is electrically connected with the contact region. The first, second, and third dopant implantation procedures are configured such that the buried region extends laterally across the contact region and the intermediate region to establish first and second junctions of the diode, respectively, and such that the first junction has a lower breakdown voltage than the second junction.

Abstract: Multiple resets in a system-on-chip (SOC) during boot where on-board regulators and low voltage detector circuits have different trimmed and untrimmed values may be avoided by the inclusion of a series of latches that latch the trimmed values during boot and retain the trim values even during a SOC reset event. The SOC is prevented from entering into a reset loop during boot or when exiting reset for any reason other than boot. A power-on-reset comparator circuit that does not depend on any trim values enables the latches and only clears the latched trim values if its own supply voltage falls below a preset level.

Abstract: An approach is provided in which a design tool executes static timing analysis of an integrated circuit design using a first set of timing values corresponding to a first set of layout properties of a transistor included in a standard cell utilized by the integrated circuit design. When the design tool determines that the static timing analysis generates a timing violation within a violation budget, the design tool selects a second set of timing values of the standard cell corresponding to a second set of layout properties of the transistor. The design tool determines that re-execution of the static timing analysis using the second set of timing values resolves the timing violation and, in turn, generates mask layer data that includes the second set of layout properties.

Abstract: An integrated circuit device comprises at least one connectivity identification module. The at least one connectivity identification module is arranged to determine an initial sensed state of at least one external signal path of the integrated circuit device, cause the at least one external signal path to be pulled towards an opposing state to the initial sensed state therefor, determine a new sensed state of the at least one external signal path of the integrated circuit device, and identify a presence of a broken connection within the at least one external signal path, if the new sensed state of the at least one external signal path does not match the initial sensed state of the at least one external signal path.

Abstract: An electrostatic discharge (ESD) protection device includes a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type, and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type. The first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device includes a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device.

Abstract: A clock distribution module for a digital synchronous system is described. The clock distribution module comprising a first node arranged to comprise a clock signal comprising a propagation delay relative to a reference clock signal, at least one further node arranged to comprise a clock signal comprising a propagation delay relative to the reference clock signal corresponding to that of the first node, and a clock configuration module. The clock configuration module is arranged to receive at least one indication of clock skew between the first node and at least one further node of the clock distribution module, and to selectively couple the first node to the at least one further node based at least partly on the at least one indication of clock skew there between.

Abstract: A device includes a semiconductor substrate having a surface, a trench in the semiconductor substrate extending vertically from the surface, a body region laterally adjacent the trench, spaced from the surface, having a first conductivity type, and in which a channel is formed during operation, a drift region between the body region and the surface, and having a second conductivity type, a gate structure disposed in the trench alongside the body region, recessed from the surface, and configured to receive a control voltage is applied to control formation of the channel, and a gate dielectric layer disposed along a sidewall of the trench between the gate structure and the body region. The gate structure and the gate dielectric layer have a substantial vertical overlap with the drift region such that electric field magnitudes in the drift region are reduced through application of the control voltage.

Abstract: Methods and systems are disclosed for address mapping between die-to-die-port (DTDP) host devices and DTDP expansion devices for combined system-in-package (SiP) solutions. Interconnect circuitry having a plurality of ports is configured to provide communication from the host device to the expansion device so that the expansion device appears to be resident on the host device. Configurable address mapping is used to re-configure the host memory map to include expansion memory map details in a seamless fashion. Further, direct circuit interconnection blocks (e.g., using copper pillar (CuP) connectors) can be used to improve connectivity and performance.

Abstract: A method of measuring a capacitor value comprises the steps of loading the capacitor up to a given voltage value; obtaining a first measure of a time for discharging the capacitor by a fixed voltage drop, the discharge of the capacitor being caused by a first current; reloading the capacitor up to the given voltage value; obtaining a second measure of a time for discharging the capacitor by the fixed voltage drop, the discharge of the capacitor being caused by the first current and by a second current of known value added to said first current; and determining the capacitor value from the difference between the first measure and the second measure, based on the given voltage drop or the given time, respectively, and based further on the known value of the given second current.

Abstract: A decoding unit for decoding a signal modulating a plurality of symbols wherein each symbol carries a plurality of information which are code-division multiplexed in the time domain and in the frequency domain and wherein each information is associated with a known sequence of phase rotations, the phase in the known sequence varying deterministically between the plurality of symbols. The decoding unit first performs a phase rotation of the received plurality of symbols, then performs the time-domain despreading operation and finally performs the frequency-domain despreading operation. A processor, a receiver, a method and a computer program are also claimed.

Abstract: A method of calculating at least one delay timing value for at least one setup timing stage within an integrated circuit design includes applying Negative/Positive Bias Temperature Instability (N/PBTI) compensation margins to delay values for elements within the at least one setup timing stage, and calculating the at least one delay timing value for the at least one setup timing stage based at least partly on the N/PBTI compensated delay values. The method further includes identifying at least partially equivalent elements within parallel timing paths of the at least one setup timing stage, and applying reduced N/PBTI compensation margins to delay values for the identified at least partially equivalent elements within parallel timing paths of the at least one setup timing stage.

Abstract: A system on chip having two or more responder units and two or more protection units is provided. Each of the responder units comprises a set of responder elements. Each of the protection units is associated with and protects one of the responder units and is arranged to provide a group mapping. The group mapping assigns one or more group identifiers to each of the responder elements of the respective responder unit.

Abstract: A fail-safe booting system suitable for a system-on-chip (SOC) automatically detects and rectifies failures in power-on reset (POR) configuration or boot loader fetch operations. If a failure due to a boot loader fetch occurs, a POR configuration and boot loader are fetched from a different non-volatile memory. The reloading takes place from further different non-volatile memory sources if the boot loader fetch fails again. The automated system operates in accordance with a state machine, and does not involve any manual, on-board switch selection or manual re-programming.

Abstract: A method of testing simultaneous multi-threaded operation of a shared execution resource in a processor includes running test patterns including irritator threads and non-irritator threads that try to simultaneously use the shared execution resource. Synchronizing the starts of the access of the irritator threads and the non-irritator threads to the shared execution resource includes the initial instructions of the irritator thread disabling execution of the irritator thread using a thread management register, and the initial instructions of the non-irritator thread enabling the irritator thread using the thread management register and starting execution of the non-irritator thread. Ending access to the shared execution resource includes the irritator thread communicating to the non-irritator thread an address of an end of the irritator thread loop, and the non-irritator thread moving the irritator thread out of the loop using thread restart.

Abstract: Spare gate cells for inclusion in an integrated circuit have multiple inputs and outputs and are capable of selectively performing, concurrently, multiple logic functions on signals appearing at the inputs. Selection of required logic functions depends on the connections of at least one of the inputs of the spare cell. One of the outputs is fed back to an input of the spare gate cell to provide certain functionality while other outputs are set to a fixed logical value. The spare gate cell may be configured to perform NOR, OR and inverter operations on inputs simultaneously.

Abstract: A semiconductor device is provided which comprises an ESD protection device. The ESD protection device is being formed by one or more pnp transistors which are present in the structure of the semiconductor device. The semiconductor device comprises two portions, of an isolated p-doped region which are separated by an N-doped region. Two p-doped regions are provided within the two portions. The p-dopant concentration of the two-doped region is higher than the p-dopant concentration of the isolated p-doped region. A first electrical contact is connected only via a highly doped p-contact region to the first p-doped region and a second electrical contact is connected only via another highly doped p-contact region to the second p-doped region.

Abstract: A lead frame has a trace embedded in an encapsulant and a plurality of stubs (i) embedded in the encapsulant and (ii) connected to and extending from the trace at different locations along the length of the trace. The stubs inhibit the formation of cracks that may otherwise form along the trace due to thermal or mechanical bending of the lead frame, especially cracks that tend to occur along the four linear edge traces located at the periphery of some conventional embedded lead frames.

Abstract: A temperature coefficient factor circuit is provided which generates a current which varies with temperature according to a programmable temperature coefficient factor. The temperature coefficient factor circuit comprises a first current source providing a first current with a positive temperature coefficient factor, a second current source providing a second current with a negative temperature coefficient factor, a common terminal, a first programmable amplifying current mirror, a second programmable amplifying current mirror and a current output circuit. The first programmable amplifying current mirror provides in dependence of a control signal ctrl an amplified first current to the common terminal. The second programmable amplifying current mirror conducts away in dependence of the control signal ctrl an amplified second current from the common terminal. The current output circuit provides the output current based on a difference current between the amplified first current and the amplified second current.