Abstract: A method and information processing system with improved cache organization is provided. Each register capable of accessing memory has associated metadata, which contains the tag, way, and line for a corresponding cache entry, along with a valid bit, allowing a memory access which hits a location in the cache to go directly to the cache's data array, avoiding the need to look up the address in the cache's tag array. When a cache line is evicted, any metadata referring to the line is marked as invalid. By reducing the number of tag lookups performed to access data in a cache's data array, the power that would otherwise be consumed by performing tag lookups is saved, thereby reducing power consumption of the information processing system, and the cache area needed to implement a cache having a desired level of performance may be reduced.

Abstract: A process integration is disclosed for fabricating non-volatile memory (NVM) cells having recessed control gates (118, 128) on a first substrate area (111) which are encapsulated in one or more planar dielectric layers (130) prior to forming in-laid high-k metal select gates and CMOS transistor gates (136, 138) in first and second substrate areas (111, 113) using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.

Abstract: A technique for electromigration stress mitigation in interconnects of an integrated circuit design includes generating a maximal spanning tree of a directed graph, which represents an interconnect network of an integrated circuit design. A first point on the spanning tree having a lowest stress and a second point on the spanning tree having a highest stress are located. A maximum first stress between the first and second points is determined. In response to determining the maximum first stress between the first and second points is greater than a critical stress, a stub is added to the spanning tree at a node between the first and second points. The maximum first stress between the first and second points is re-determined subsequent to adding the stub.

Abstract: An embedded software debug system with partial hardware acceleration includes a computer that executes a debug software stack. The debug software stack includes high level operations. The system also includes a remote microcontroller electronically connected to the computer. The system further includes an embedded processor electronically connected to the remote microcontroller. The remote microcontroller receives an applet from the computer and executes the applet in conjunction with the computer executing the debug software stack to debug the embedded processor. The applet includes low level protocol operations including performance critical tight-loops precompiled into machine code. The debug software stack may include a stub that replaces the tight-loops of the applet. The computer may send the applet to the remote microcontroller in response to executing the still).

Abstract: A method for programming a split gate memory cell includes performing a first programming of the split gate memory cell in a first programming cycle of the split gate memory cell; and, subsequent to the performing the first programming of the split gate memory cell, performing a second programming of the split gate memory cell in the first programming cycle, wherein the first programming is characterized as one of source-side injection (SSI) programming and channel-initiated secondary electron (CHISEL) programming, and the second programming is characterized as the other of SSI programming and CHISEL programming.

Abstract: A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.

Abstract: An electronic design automation (EDA) tool for adding a feature to a target parameterized cell (pcell) in an electronic circuit design includes a memory that stores the electronic circuit design, and a processor in communication with the memory. The processor defines a specification of an add-on pcell. The specification includes a feature to be added to the target pcell. The processor reads the properties associated with the target pcell and generates the add-on pcell based on its specification and the properties of the target pcell. The add-on pcell then is instantiated and bound to the target pcell, which adds the feature to the target pcell.

Abstract: A device includes a Doherty amplifier having a main path and a peaking path. The Doherty amplifier includes a main amplifier configured to amplify a signal received from the main path and a peaking amplifier configured to amplify a signal received from the peaking path when the signal received from the peaking path exceeds a predetermined threshold. The device includes a first driver amplifier connected to the main path of the Doherty amplifier. The first driver amplifier is configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the main amplifier. The device includes a second driver amplifier connected to the peaking path of the Doherty amplifier. The second driver amplifier is configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the peaking amplifier.

Abstract: A circuit arrangement comprises a plurality of current channels located in different die areas of a shared circuit die, at least one of the plurality of current channels comprising a power device; at least one sense circuit connected to one or more of the different die areas and arranged to provide a sense current from sensing a current through a primary of the plurality of current channels comprising one of the different die areas. The at least one sense circuit comprises a compensation module arranged to provide a compensation current adapted to at least partly compensate a deviation of the sense current caused by crosstalk between the primary and one or more secondary of the plurality of current channels depending on one or more secondary currents flowing through the one or more secondary current channels; wherein the compensation module is arranged to provide the compensation current at least partly as a weighted sum of the one or more secondary currents.

Abstract: An electronic device comprises a voltage regulator supplying a current to a load such as a micro-controller unit. The load controls the current provided to the load from the voltage regulator. Preferably, the load controls the level of current supplied to the load upon start-up, thereby avoiding power surges being drawn by the load.

Abstract: A method of forming an NVM cell and a logic transistor uses a semiconductor substrate. In an NVM region, a polysilicon select gate of the NVM cell is formed over a first thermally-grown oxygen-containing layer, and in a logic region, a work-function-setting material is formed over a high-k dielectric and a polysilicon dummy gate is formed over the work-function-setting material. Source/drains, a sidewall spacer, and silicided regions of the logic transistor are formed after the first thermally-grown oxygen-containing layer is formed. The polysilicon dummy gate is replaced by a metal gate. The logic transistor is protected while the NVM cell is then formed including forming a charge storage region.

Abstract: A semiconductor device includes a substrate, a dielectric layer supported by the substrate, an interconnect adjacent the dielectric layer, the interconnect including a conduction material and a barrier material disposed along sidewalls of the interconnect between the conduction material and the dielectric layer, and a layer disposed over the interconnect to establish an interface between the conduction material, the barrier material, and the layer. A plate is disposed along a section of the interconnect to interrupt the interface.

Abstract: A computer-implemented method of configuring a semiconductor device includes identifying an interconnect having an interconnect path length greater than a stress-induced void formation characteristic length of the semiconductor device, and placing, with a processor, a conductive structure adjacent the interconnect to define a pair of segments of the interconnect. Each segment has a length no greater than the stress-induced void formation characteristic length of the interconnect, and the conductive structure is selected from the group consisting of a decoy via connected to the interconnect, a floating tile disposed along the interconnect, a tab that laterally extends outward from the interconnect, and a jumper from a first metal layer in which the interconnect is disposed to a second metal layer.

Abstract: The embodiments described herein can provide improved signal feeding between hybrid couplers and associated transistors. As such, these embodiments can improve the performance of amplifiers and other such RF devices that utilize these components. In one embodiment a device includes a distribution network and a compensation resonator. The distribution network is configured to output a signal through a relatively wide output feedline. This relatively wide output feedline provides distributed signal feeding that can improve signal distribution and performance. The output feedline is coupled to the compensation resonator. In general, the compensation resonator is configured to resonate with the distribution network at the frequency band of the signal. Thus, the distribution network and compensation resonator together can provide improved signal distribution while maintaining performance at the frequencies of interest.

Abstract: A memory device comprising a plurality of static random access memory (SRAM) bit cells, and a word line driver coupled to provide a word line signal to the bit cells. The word line driver receives a global word line signal that remains active while the word line signal is asserted and subsequently de-asserted, and the word line signal is coupled between a positive supply voltage (VDD) and a supply voltage below ground (VN).

Abstract: A controller node for an entertainment control network, comprises controller logic arranged to be paired with at least one controlled device over a wireless interface. The controller logic is further arranged to provide pairing information for the at lease one controlled device with which it is paired to a further node within the entertainment control network.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region.

Abstract: A semiconductor device includes a substrate comprising a heterostructure configured to support formation of a channel during operation, first and second dielectric layers supported by the substrate, the second dielectric layer being disposed between the first dielectric layer and the substrate, a gate supported by the substrate, disposed in a first opening in the first dielectric layer, and to which a bias voltage is applied during operation to control current flow through the channel, the second dielectric layer being disposed between the gate and the substrate, and an electrode supported by the substrate, disposed in a second opening in the first and second dielectric layers, and configured to establish a Schottky junction with the substrate.

Abstract: Methods are provided for forming a device that includes merged vertical and lateral transistors with collector regions of a first conductivity type between upper and lower base regions of opposite conductivity type that are Ohmically coupled via intermediate regions of the same conductivity type and to the base contact. The emitter is provided in the upper base region and the collector contact is provided in outlying sinker regions extending to the thin collector regions and an underlying buried layer. As the collector voltage increases part of the thin collector regions become depleted of carriers from the top by the upper and from the bottom by the lower base regions. This clamps the collector regions' voltage well below the breakdown voltage of the PN junction formed between the buried layer and the lower base region. The gain and Early Voltage are increased and decoupled and a higher breakdown voltage is obtained.

Abstract: A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel.