Abstract: An integrated circuit (IC) device including an electrostatic discharge (ESD) protection network for a high voltage application. The ESD protection network includes a common diode structure coupled between an external contact of the IC device and a substrate of the IC device, such that the common diode structure is forward biased towards the external contact, a Darlington transistor structure coupled between the external contact and the substrate of the IC device, and the Darlington transistor structure includes: an emitter node coupled to the external contact; a collector node coupled to the substrate; and a base node coupled between the emitter node of the Darlington transistor structure and the common diode structure. The at least one ESD protection network further comprises an isolation diode structure coupled between the emitter node and the base node of the Darlington transistor structure such that the isolation diode structure is forward biased towards the base node.

Abstract: An apparatus comprises a number of sub-systems and a control interface operably coupled to sub-systems for routing data therebetween. A strobe generation function is operably coupled to the control interface and configured to generate a plurality of different strobe signals to differentiate between different intended receiving devices. Thus, different strobe signals may be multiplexed onto a single control interface link, based on a pulse width or voltage magnitude characteristics of the respective strobe signals. A strobe decoder function is operably coupled to the control interface and configured to decode a plurality of different strobe signals to differentiate between triggering sub-systems on receiving devices.

Abstract: A timer to provide pulses at a comparator output wherein a frequency of the pulses is dependent on temperature, wherein providing each pulse includes biasing a first input of the comparator at a voltage and operating a transistor in a subthreshold region of operation to change the voltage of the first input of a comparator at a rate dependent upon temperature. The output of the comparator changes state when the voltage of the first input crosses a voltage of a second input of the comparator.

Abstract: A Quad Flat Package (QFP) semiconductor device has a multi-stepped lead frame for forming rows of external contacts. A semiconductor die is attached to a die pad of the lead frame and electrically connected to lead with bond wires. The die and bond wires are encapsulated with a mold compound and then multiple cuts are made to the lead frame to form the rows of external contacts.

Abstract: A semiconductor device including a lead frame, a routing substrate disposed within the lead frame, and an active component mounted on the routing substrate. The active component has a plurality of die pads. The routing substrate includes a set of first bond pads, a set of second bond pads, and interconnections, where each interconnection provides an electrical connection between a first bond pad and a corresponding second bond pad. The semiconductor device further includes electrical couplings between one or more of die pads of the active component and corresponding first bond pads of the routing substrate, as well as electrical couplings between leads of the lead frame and respective second bond pads of the routing substrate.

Abstract: An anti-counterfeiting security circuit is incorporated into an authentic integrated circuit device to induce failure in a counterfeited integrated circuit device by forming the security circuit (e.g., 21, 31, 41, 51) with one or more operatively inert high-k metal gate transistors (e.g., HKMG PMOS 112) having switched or altered work function metal layers (82) where the security circuit defines a first electrical function with the one or more operatively inert high-k metal gate transistors and defines a second different electrical function if the one or more operatively inert high-k metal gate transistors were instead fabricated as operatively functional high-k metal gate transistors of the first polarity type with a work function metal layer of the first polarity type, the security circuit would define a second different electrical function.

Abstract: During a debug mode of operation of a data processor it is determined whether a data access request is to a stack of the data processor. If not, a data trace message based on the data access request is generated for transmission to a debugger so long as an address being accessed by data access request meets a predefined address range criteria. Otherwise, if the data access request is to the stack of the data processor, a data trace message based on the data access request is prevented from being generated for transmission to the debugger regardless the predefined address range criteria.

Abstract: An area-efficient, high voltage, single polarity ESD protection device (300) is provided which includes an p-type substrate (303); a first p-well (308-1) formed in the substrate and sized to contain n+ and p+ contact regions (310, 312) that are connected to a cathode terminal; a second, separate p-well (308-2) formed in the substrate and sized to contain only a p+ contact region (311) that is connected to an anode terminal; and an electrically floating n-type isolation structure (304, 306, 307-2) formed in the substrate to surround and separate the first and second semiconductor regions. When a positive voltage exceeding a triggering voltage level is applied to the cathode and anode terminals, the ESD protection device triggers an inherent thyristor into a snap-back mode to provide a low impedance path through the structure for discharging the ESD current.

Abstract: A method of packaging a semiconductor die includes the use of an embedded ground plane or drop-in embedded unit. The embedded unit is a single, stand-alone unit with at least one cavity. The embedded unit is placed on and within an encapsulation area of a process mounting surface. The embedded unit may have different sizes and shapes and a number of different cavities that can be placed in a predetermined position on a substrate, panel or tape during processing of semiconductor dies that are embedded into redistributed chip package (RCP) or wafer level package (WFL) panels. The embedded unit provides the functionality and design flexibility to run a number of embedded units and semiconductor dies or components having different sizes and dimensions in a single processing panel or batch and reduces die drift, movement or skew during encapsulation and post-encapsulation cure.

Abstract: A technique for operating a processor includes translating, using an associated translation lookaside buffer, a first virtual address into a first physical address through a first entry number in the translation lookaside buffer. The technique also includes translating, using the translation lookaside buffer, a second virtual address into a second physical address through a second entry number in the translation lookaside buffer. The technique further includes, in response to the first entry number being the same as the second entry number, determining that the first and second virtual addresses point to the same physical address in memory and reference the same data.

Abstract: An n-bit counter is formed from cascading counter sub-modules. The counter includes combinatorial control logic coupled to a lower order counter sub-module. The control logic is arranged to clock gate at least one higher order counter sub-module dependent on a logical combination of outputs of the lower order counter sub-module and where the control logic uses pipelining to store at least one previous control logic output for use in determining a later control logic output.

Abstract: A Universal SPI Interface is provided that is compatible, without the need for additional interface logic or software, with the SPI bus, existing DSA and other serial busses similar to (but not directly compatible with) the SPI bus, and parallel busses requiring compatibility with 74xx164-type signaling. In an additional aspect, a reduced-pincount Universal SPI Interface is provided that provides the same universal interface, but using fewer external output pins. The Universal SPI Interface includes multiple latches, buffers, and in an alternative embodiment, a multiplexer, configured together such that a Universal SPI interface is provided that can be readily reconfigured using only input signals to provide compatibility across multiple bus interfaces.

Abstract: Recessed semiconductor die stacks. In some embodiments, a semiconductor device includes a first die including an active side and a back side, the back side including a non-recessed portion thicker than a recessed portion, the recessed portion including one or more through-die vias on a recessed surface; and a second die located in the recessed portion, the second die including an active side facing the recessed surface of the first die and coupled thereto through the one or more through-die vias. In another embodiment, a method includes creating a recess on a first die having a first thickness, the recess having a depth smaller than the first thickness; coupling a second die having a second thickness greater than the depth to the recess; and reducing the thickness of the second die by an amount equal to or greater than a difference between the second thickness and the depth.

Abstract: A method and apparatus are described for integrating high voltage (HV) transistor devices and medium voltage or dual gate oxide (DGO) transistor devices with low voltage (LV) core transistor devices on a single substrate, where each high voltage transistor device (160) includes a metal gate (124), an upper high-k gate dielectric layer (120), a middle gate dielectric layer (114) formed with a relatively lower high-k dual gate oxide layer, and a lower high voltage gate dielectric stack (108, 110) formed with one or more low-k gate oxide layers (22), where each DGO transistor device (161) includes a metal gate (124), an upper high-k gate dielectric layer (120), and a middle gate dielectric layer (114) formed with a relatively lower high-k dual gate oxide layer, and where each core transistor device (162) includes a metal gate (124), an upper high-k gate dielectric layer (120), and a base oxide layer (118) formed with one or more low-k gate oxide layers.

Abstract: An embodiment of an electronic system includes a processing element, a bus controller, and a peripheral module. The processing element executes machine readable code for performing a data transfer of an x-bit wide data value between the processing element and the peripheral module. Performing the data transfer includes providing a processing element-provided address corresponding to a y-bit wide data register of the peripheral module, where y is less than x. The bus controller receives the processing element-provided address, and in response, performs a series of multiple data transfers with the peripheral module. This includes providing a first peripheral address for a first data transfer of the series, and providing at least one different peripheral address for at least one other data transfer of the series. The peripheral module maps the first peripheral address and the at least one different peripheral address to the y-bit wide data register.

Abstract: A layout of a standard cell is created by prioritizing routability characteristics of the standard cell layout. The routability characteristics are prioritized so that the characteristics that are more likely to enhance routing efficiency are emphasized in the cell layout. The prioritization of the routability characteristics can be indicated by a set of weights, with each weight in the set indicating the priority of a corresponding routability characteristic of the standard cell layout. The weights can be used to calculate a weighted sum of the routability characteristics of the standard cell, thereby providing a way to efficiently compare the routability of different standard cell layouts.

Abstract: A method for providing data protection for data stored within a Random Access Memory element. The method comprises receiving data to be written to memory, dividing the received data into a plurality of data sections, applying error correction codes to the data sections to form codeword sections, interleaving the codeword sections to form an interleaved data codeword, and writing within a single clock cycle the interleaved data codeword to memory.

Abstract: A calibration signal generator for use in a balancing circuit calibration device in a radio receiver, the calibration signal generator comprising: a means of amplifying a clocking signal from a clocking signal generator to provide a first calibration signal; a means of generating a second calibration signal from the clocking signal, the first and second calibration signals being transmissible to a one or more mixing circuits in the balancing circuit calibration device; and a means synchronizing the operation of other circuit elements in the balancing circuit calibration device with the clocking signal; characterized in that the clocking signal generator is present in the radio receiver and used therein for other functions.

Abstract: Embodiments of systems and methods include a sensor subsystem (e.g., within a container-mounted device) that produces a sensor output, and a processing system that implements a state machine. Upon entry into a first state, the processing system starts a timer, and while in a second state, the processing system waits for a specific sensor output value to be received. The processing system transitions from the first state to the second state upon expiration of the timer, and the processing system transitions from the second state to the first state when the sensor output corresponds to the specific sensor output value. When the state machine is in the second state, the output device produces a human-perceptible indicia configured to prompt a human user to perform an action that is likely to cause the sensor to produce the sensor output that corresponds to the specific sensor output value.

Abstract: A comparator used in a clock signal generation circuit compares two input signals and generates an output signal. The comparator has first and second input transistors coupled to the input signals. First and second hysteresis transistors are coupled between the input transistors and an output stage of the comparator, and apply hysteresis to a comparison of the input signals. First and second hysteresis control transistors are coupled between the input transistors and the hysteresis transistors to isolate the hysteresis transistors from the input transistors under control of a hysteresis enable signal. The comparator is operable in a first mode or a second mode based on a hysteresis enable signal. In the first mode the comparator applies hysteresis to the comparison of the input signals and in the second mode, compares the input signals without hysteresis.