Abstract: Fluorine is located in selective portions of a gate oxide to adjust characteristics of the gate oxide. In some embodiments, the fluorine promotes oxidation which increases the thickness of the selective portion of the gate oxide. In some embodiments, the fluorine lowers the dielectric constant of the oxide at the selective portion. In some examples, having fluorine at selective portions of a select gate oxide of a non volatile memory may reduce program disturb of the memory.

Abstract: A synchronous clock multiplexer circuit detects the presence of an input clock signal whenever an input select signal changes state to select the input clock signal, and generates an output select signal, which is then used instead of the input select signal for selecting an input clock signal as an output clock signal. The output select signal stays in a logic high state to select a second input clock signal when the input select signal transitions from high to low to select a first input clock signal but the first input clock signal is not present. The output select signal stays in a logic low state to select the first input clock signal when the input select signal transitions from low to high to select the second input clock signal but the second input clock signal is not present.

Abstract: A technique for detecting an imminent read failure in a non-volatile memory array includes applying a bulk read stress to a plurality of cells of the non-volatile memory array and determining whether the plurality of cells exhibit an uncorrectable error correcting code (ECC) read during an array integrity check at a margin read verify voltage level subsequent to the bulk read stress. The technique also includes providing an indication of an imminent read failure for the plurality of cells when the plurality of cells exhibit the uncorrectable ECC read during the array integrity check. In this case, the margin read verify voltage level is different from a normal read verify voltage level.

Abstract: A data processing system comprising a processing unit, a first memory, and a second memory, wherein the data processing system is arranged to hardware protect the second memory when a write access to the first memory is executed, wherein the processing unit is arranged to execute a program having at least one jump instruction and at least one return instruction, wherein the processing unit is arranged to store a program stack in the first memory, wherein the processing unit is arranged to store a return address on the program stack and to store a return address copy in the second memory when the at least one jump instruction is executed, and wherein the processing unit is arranged to compare the return address with the return address copy when the at least one return instruction is executed.

Abstract: Edge coupling of semiconductor dies. In some embodiments, a semiconductor device may include a first semiconductor die, a second semiconductor die disposed in a face-to-face configuration with respect to the first semiconductor die, and an interposer arranged between the first semiconductor and second semiconductor dies, the interposer having an edge detent configured to allow an electrical coupling between the first and second semiconductor dies. In other embodiments, a method may include coupling a first semiconductor die to a surface of an interposer where an edge of the interposer includes detents and the first semiconductor die includes a first pad aligned with a first detent, coupling a second semiconductor die to an opposite surface of the interposer where the first and second semiconductor dies are in a face-to-face configuration and the second semiconductor die includes a second pad aligned with a second detent, and coupling the first and second pads together.

Abstract: A system-on-chip comprises an internal module having diagnostic functionality, and a physical communications port coupled to a first data path and arranged to support, when in use, a datagram-based communications interface for communicating with an external data communications unit. Debug logic circuitry is operably coupled to a debug interface and the internal module, the debug interface being arranged to support communication of debug data relating to the internal module. The system-on-chip also comprises configurable hardware logic circuitry configured as datagram processing logic and is arranged to support use of a datagram to communicate with the debug logic. The datagram processing logic is operably coupled to the first data path and a second data path, the second data path being operably coupled to the debug interface.

Abstract: A process integration is disclosed for fabricating non-volatile memory (NVM) cells having spacer control gates (108) along with a high-k-metal-poly select gate (121, 123, 127) and one or more additional in-laid high-k metal CMOS transistor gates (121, 124, 128) using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.

Abstract: An oscillator circuit for providing an output clock signal is described. The oscillator circuit comprising a voltage reference, a first current source, first capacitor, first capacitor switch, second current source, second capacitor, second capacitor switch, first comparator, second comparator and flip-flop. The first comparator comprises a first chopper-stabilized comparator switchable between a compare phase and a zeroing phase in dependence on the output clock signal and arranged to operate in the compare phase in a first half-phase of the output clock signal to provide a first comparator output from comparing the first capacitor voltage to the reference voltage and in the zeroing phase in the second half-phase.

Abstract: The embodiments described herein provide a power transmitter for wireless charging of an electronic device and methods of its operation. The power transmitter uses an inverter configured to generate a square wave from a potentially wide ranging DC input voltage. The inverter is configured to generate the square wave with a duty cycle that results in a desired equivalent voltage output, effectively independent of the DC input voltage that is provided. Thus, by generating a square wave with a selectable duty cycle the inverter provides the ability to facilitate wireless power transfer with a wide range of DC input voltages. Furthermore, in some embodiments the power transmitter may provide improved power transfer efficiency using a quasi-resonant phase shift control strategy with adjustable dead time and a matching network that is dynamically selectable to more effectively couple with the transmitter coil combination being used to transmit power to the electronic device.

Abstract: A switch mode power supply has a first and second branch of an inductive element; a first switching element and a second switching element connected in series. Both branches are coupled to a power source in parallel. A controller controls said switching elements for operating said switch mode power supply in a plurality of consecutive time periods, wherein more than two of said switching elements are closed, i.e. at least one in each branch. The power supply has a polarity switching element coupled between said branches for receiving a pulsed voltage for providing an output voltage of a switchable polarity. The controller receives a feedback signal corresponding to the output voltage, compares the feedback signal to a reference waveform, and controls said switching elements and the polarity switching element in dependence of said comparing for generating the output voltage according to the reference waveform.

Abstract: A method of measuring a negative voltage using a device including a first transistor and a second transistor is provided. The first transistor is coupled to the second transistor and the negative voltage is supplied to a gate of the second transistor. A plurality of voltages are provided to a source input of the device. For each voltage of the plurality of voltages, whether a first voltage across the first transistor is equivalent to a second voltage across the second transistor is determined, and, when the first voltage across the first transistor is equivalent to the second voltage across the second transistor, the negative voltage is determined by measuring a magnitude of a positive voltage of the device.

Abstract: Embodiments of methods of fabricating a sensor device includes attaching a first wafer to a sensor wafer with a first bond material, and attaching a second wafer to the sensor wafer with a second bond material, the second bond material having a lower bonding temperature than the first bond material. After attaching the second wafer, an opening (e.g., a trench cut) through the second wafer is formed, and an adhesive material is provided through the opening to further secure the second wafer to the sensor wafer. Embodiments of sensor devices formed using such methods include a first device cavity having a first pressure, and a second device cavity having a second pressure.

Abstract: An electronic device for generating an error signal in response to an electrostatic discharge perturbation is described. The device may comprise: a detection unit for generating a detection signal in response to said electrostatic discharge perturbation, said detection signal correlating in time with said electrostatic discharge perturbation; a clock for generating a clock signal having a clock period; and a protection unit for generating an error signal in response to said detection signal only when a duration of said detection signal exceeds a predefined multiple of said clock period. A method of generating an error signal in response to an electrostatic discharge perturbation, for protecting electronic circuitry, is also disclosed.

Abstract: A computer system for generating an optimized program code from a program code having a loop with an exit branch, wherein the computer system comprises a processing unit, wherein the processing unit is arranged to convert an exit instruction of the exit branch into a predicated exit instruction, wherein the processing unit is arranged to determine common dependencies within the loop, wherein the processing unit is arranged to generate modified dependencies by adding additional dependencies to the common dependencies, and wherein the processing unit is arranged to apply an algorithm that uses software pipelining for generating an optimized program code for the loop based on the modified dependencies.

Abstract: A method of testing a semiconductor device includes forming a test circuit over a semiconductor substrate. The test circuit includes a plurality of interconnects electrically connected to a set of device structures supported by the semiconductor substrate. A test, such as a gate stress or leakage current test, of each device structure is conducted with the test circuit. The plurality of interconnects are removed after conducting the test.

Abstract: A first set of electrically conductive cladding is disposed on an inner section of one external side of a package substrate. The first set electrically conductive cladding is fabricated with a first solder compound. A second set of electrically conductive cladding is disposed on an outer section of the one external side of the substrate. The second set of electrically conductive cladding consists of a second solder compound. The outer section can be farther away from a center of the one external side of the substrate than the inner section. During a reflow process, the first and second solder compounds are configured to become completely molten when heated and the first solder compound solidifies at a higher temperature during cool down than the second solder compound.

Abstract: A memory having an array of multi-gate memory cells and a word line driver circuit coupled to a sector of memory cells of the array. In at least one mode of operation, the word line driver circuit is controllable to place an associated control gate word line coupled to the control gate word line driver and coupled to the sector in a floating state during a read operation where the sector is a non selected sector.

Abstract: A method of testing a device includes setting a potential of a cap terminal of the device to a first voltage, setting a potential of a self test plate of the device to a testing voltage, and detecting a first displacement of a proof mass of the device when the cap terminal is set to the first voltage and the self test plate is set to the testing voltage. The method includes setting a potential of the cap terminal of the device to a second voltage, detecting a second displacement of the proof mass of the device when the cap terminal is set to the second voltage and the self test plate is set to the testing voltage, and comparing the first displacement and the second displacement to evaluate an electrical connection between the cap terminal and a cap of the device.

Abstract: A dual supply level shifter circuit includes a switching circuit and a set of level shifter circuits coupled to the switching circuit. The switching circuit includes a first set of coupled transistors, wherein the supply switching circuit is coupled to a first supply source that is configured to provide a first power supply voltage and is coupled to a second supply source that is configured to provide a second power supply voltage. The set of level shifter circuits includes a second set of coupled transistors, wherein the set of level shifter circuits is configured to receive a voltage input signal at an input node from a first circuit and to supply to an output node of the dual supply level shifter circuit an output signal having a value that is a highest voltage value between the first power supply voltage and the second power supply voltage.

Abstract: There is disclosed a switching arrangement comprising a switch with a plurality of individually controllable elementary switches connected in parallel between a first supply rail and a second supply rail. Each of the elementary switches can be in either one of a closed state and an open state independently of the others. A controller is adapted to dynamically control the closing or opening of the elementary switches, depending on the intensity of a current flowing through the switch. The number of elementary switches in the closed state is variable. The higher is the intensity of the current, the higher the number of elementary switches in the closed state. Thus, the impedance of the switch decreases when the current increases, and vice versa, and the voltage drop across the switch may be kept substantially constant.