Abstract: Manufacturing of magnetometer units (20?) employs a test socket (41) having a substantially rigid body (43) with a cavity (42) therein holding an untested unit (20) in a predetermined position (48) proximate electrical connection (50) thereto, wherein one or more magnetic field sources (281, 332, 333, 334, 335, 336) fixed in the body (43) provide known magnetic fields at the position (48) so that the response of each unit (20) is measured and compared to stored expected values. Based thereon, each unit (20) can be calibrated or trimmed by feeding corrective electrical signals back to the unit (20) through the test socket (41) until the actual and expected responses match or the unit (200) is discarded as uncorrectable. In a preferred embodiment, the magnetic field sources (281, 332, 333, 334, 335, 336) are substantially orthogonal coil pairs (332, 333, 334) arranged so that their centerlines (332-1, 333-1, 334-1) coincide at a common point (46) within the predetermined position (48).

Abstract: A first transistor and a second transistor are formed with different threshold voltages. A first gate is formed over the first region of a substrate for a first transistor and a second gate over the second region for a second transistor. The first region is masked. A threshold voltage of the second transistor is adjusted by implanting through the second gate while masking the first region. Current electrode regions are formed on opposing sides of the first gate and current electrode regions on opposing sides of the second gate.

Abstract: A system, computer program and a method for scheduling a processing entity task in a multiple-processing entity system, the method includes initializing a scheduler; receiving a task data structure indicative that a pre-requisite to an execution of task to be executed by a processing entity is a completion of a peripheral task that is executed by a peripheral; wherein the peripheral updates a peripheral task completion indicator once the peripheral task is completed; wherein the peripheral task completion indicator is accessible by the scheduler; and scheduling, by the scheduler, the task in response to the peripheral task completion indicator.

Abstract: Embodiments of microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the fabrication method includes printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having an interior keep-out area, such as a central keep-out area. The die attach material, such as a B-stage epoxy, is printed onto the wafer in a predetermined pattern such that the die attach material does not encroaching into the interior keep-out areas. The wafer is singulated to produce singulated microelectronic die each including a layer of die attach material. The singulated microelectronic die are then placed onto leadframes or other package substrates with the die attach material contacting the package substrates. The layer of die attach material is then fully cured to adhere an outer peripheral portion of the singulated microelectronic die to its package substrate.

Abstract: A system comprises signal processing logic that is operably coupled to at least one memory element and is arranged to enable access to the at least one memory element. The signal processing logic is arranged to receive a security key, generate a system key using the received security key and a system specific seed, perform a comparison of the generated system key to a reference key stored in an area of memory of the at least one memory element. The signal processing logic is also arranged to configure a level of access to the at least one memory element based at least partly on the comparison of the generated system key to the reference key stored in memory.

Abstract: A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.

Abstract: A method of making a semiconductor structure uses a substrate having a background doping of a first type. A gate structure has a gate dielectric on the substrate and a select gate layer on the gate dielectric. Implanting is performed into a first portion of the substrate adjacent to a first end with dopants of a second type. The implanting is prior to any dopants being implanted into the background doping of the first portion which becomes a first doped region of the second type. An NVM gate structure has a select gate, a storage layer having a first portion over the first doped region, and a control gate over the storage layer. Implanting at a non-vertical angle with dopants of the first type forms a deep doped region under the select gate. Implanting with dopants of the second type forms a source/drain extension.

Abstract: Methods and systems are disclosed for dynamic healing of non-volatile memory (NVM) cells within NVM systems. The dynamic healing embodiments described herein relax damage within tunnel dielectric layers for NVM cells that occurs over time from charges (e.g., holes and/or electrons) becoming trapped within these tunnel dielectric layers. NVM operations with respect to which dynamic healing processes can be applied include, for example, erase operations, program operations, and read operations. For example, dynamic healing can be applied where performance for the NVM system degrades beyond a selected performance level for an NVM operation, such as elevated erase/program pulse counts for erase/program operations and bit errors for read operations. A variety of healing techniques can be applied, such as drain stress processes, gate stress processes, and/or other desired healing techniques.

Abstract: A method and apparatus automatically maintains a JESD204 serial data link (252) as active by using an idle signal (254) and multiplexer selection circuit (247) to selectively switch signal data samples (246) and dummy samples (0, . . . 0) onto a serial interface input to a JESD module (248) for serialization into a plurality of symbols for transmission over the JESD204 serial data link (252) in response to a transmit clock signal (253) so that serialized symbols generated from signal data samples are transmitted when there are signal data samples available, and serialized symbols generated from dummy samples are transmitted when there are no signal data samples available.

Abstract: In some embodiments, a data processing system includes a processing unit, a first load/store unit LSU and a second LSU configured to operate independently of the first LSU in single and multi-thread modes. A first store buffer is coupled to the first and second LSUs, and a second store buffer is coupled to the first and second LSUs. The first store buffer is used to execute a first thread in multi-thread mode. The second store buffer is used to execute a second thread in multi-thread mode. The first and second store buffers are used when executing a single thread in single thread mode.

Abstract: An electrostatic discharge, ESD, protection circuit arrangement is connectable to a first pin and a second pin of an electronic circuit and arranged to at least partly absorb an ESD current entering the electronic circuit through at least one of the first pin or the second pin during an ESD stress event. The protection circuit arrangement comprises a first ESD protection circuit arranged to absorb a first portion of the ESD current during a first part of the ESD stress event during which first part a level of the ESD current exceeds a predetermined current threshold; and a second ESD protection circuit arranged to absorb a second portion of the ESD current, the second portion having a current level below the current threshold, at least during a second part of the ESD stress event. The second ESD protection circuit comprises a current limiting circuit arranged to limit a current through at least a portion of the second ESD protection circuit to the current threshold.

Abstract: A method of multicast data transfer including accessing a source address to a source location of mapped memory which stores source data, accessing multiple destination addresses to corresponding destination locations of the mapped memory, and for each of at least one section of the source data, reading the section using the source address, storing the section into a local memory of a data transfer device, and writing the section from the local memory to each destination location in the mapped memory using the destination addresses. Separate source and destination attributes may be provided, so that the source and each destination may have different attributes for reading and storing data. The source and each destination may have any number of data buffers accessible by corresponding links provided in data structures supporting the data transfer. The source data may be divided into sections and handled section by section.

Abstract: An electronic apparatus includes a semiconductor substrate, a circuit block disposed in and supported by the semiconductor substrate and comprising an inductor, and a discontinuous noise isolation guard ring surrounding the circuit block. The discontinuous noise isolation guard ring includes a metal ring supported by the semiconductor substrate and a ring-shaped region disposed in the semiconductor substrate, having a dopant concentration level, and electrically coupled to the metal ring, to inhibit noise in the semiconductor substrate from reaching the circuit. The metal ring has a first gap and the ring-shaped region has a second gap.

Abstract: A system and method of calibrating an amplifier are presented. The amplifier has a first amplification path and a second amplification path. A first state of the amplifier is identified defining a first phase shift of the first path and a second phase shift of the second path resulting in a maximum efficiency of the amplifier when an attenuation of the first path and an attenuation of the second path are set to first attenuation values. The attenuation of the first path and the attenuation of the second path is set to achieve a maximum efficiency of the amplifier when the phase shift of the first path and the phase shift of the second path are set according to the first state.

Abstract: A communication unit comprises a controller and a radio frequency signal path having a plurality of delay elements operably coupled to a series of respective amplifier stages, wherein the controller is arranged to individually enable the respective amplifier stages. In response thereto a number of the plurality of delay elements are selectively inserted into or by-passed from the radio frequency signal path thereby adjusting a phase shift applied to signals provided through the radio frequency signal path.

Abstract: A technique for testing the compatibility of an encapsulation material and a wire bond included at an unencapsulated assembly. The technique includes immersing the assembly in an encapsulating compound extract. The assembly includes a semiconductor die and a bonding wire affixed to a metalized pad of the semiconductor die by the wire bond. After the immersing, a mechanical strength of the wire bond is determined.

Abstract: A signalling circuit for a signal channel of a communication network comprises a communication network terminal connectable to the signal channel and to a voltage supply; an input terminal connectable to receive a transmit signal; a driver device comprising a first driver terminal connected to the communication network terminal, a second driver terminal connected to ground, and a driver control terminal connected to the input terminal; wherein the driver device is arranged to connect the communication network terminal to ground in response to a transition from a low to a high voltage driver control signal state of a driver control signal received at the driver control terminal.

Abstract: A semiconductor device includes a semiconductor die having a first major surface and a second major surface opposite the first major surface, a first minor surface and a second minor surface opposite the first minor surface, a plurality of contact pads on the first major surface, and a notch which extends from the first minor surface and the second major surface into the semiconductor die. The notch has a notch depth measured from the second major surface into the semiconductor die, wherein the notch depth is less than a thickness of the semiconductor die, and a notch length measured from the first minor surface into the semiconductor die, wherein the notch length is less than a length of the semiconductor die measured between the first and second minor surfaces. The device includes a lead having a first end in the notch, and an encapsulant over the first major surface.

Abstract: A technique for performing power management for configurable processor resources of a processor determining whether to increase, decrease, or maintain resource units for each of the configurable processor resources based on utilization of each of the configurable processor resources. A total weighted power number for the processor is substantially maintained while resource units for each of the configurable processor resources whose utilization is above a first level is increased and resource units for each of the configurable processor resources whose utilization is below a second level is decreased. The total weighted power number corresponds to a sum of weighted power numbers for the configurable processor resources.

Abstract: A MEMS device includes a first sense electrode and a first portion of a sense mass formed in a first structural layer, where the first sense electrode is fixedly coupled with the substrate and the first portion of the sense mass is suspended over the substrate. The MEMS device further includes a second sense electrode and a second portion of the sense mass formed in a second structural layer. The second sense electrode is spaced apart from the first portion of the sense mass in a direction perpendicular to a surface of the substrate, and the second portion of the sense mass is spaced apart from the first sense electrode in the same direction. A junction is formed between the first and second portions of the sense mass so that they are coupled together and move concurrently in response to an imposed force.