Abstract: Systems and methods are provided for delivering power from a first energy source to a second energy source. An electrical system for delivering power from a first energy source to a second energy source comprises an interface configured to be coupled to the second energy source, a switching element coupled between the first energy source and the interface, and a processing system coupled to the switching element and the interface. The processing system is configured to identify a connection event based on an electrical characteristic of the interface that is indicative of the interface being coupled to the second energy source and operate the switching element to provide a path for current from the first energy source in response to identifying the connection event.

Abstract: A communications module apparatus for an automotive network comprises an input for receiving data to be transmitted. The apparatus also comprises a first output for coupling to a first bus line and a second output for coupling to a second bus line. An alternating voltage signal transmission circuit for transmitting at least part of the received data is also provided. The alternating voltage signal transmission circuit is coupled to the first output and the second output.

Abstract: An immersion lithography apparatus includes an optical system having a liquid delivery unit. The liquid delivery unit is arranged to deliver a layer of an immersion liquid onto a surface of a wafer as well as an annulus of a barrier liquid adjacent an exterior wall of the immersion liquid. The presence of the barrier liquid prevents ingress to the immersion liquid of a gas external to the immersion liquid.

Abstract: Embodiments of capacitive sensors (500, 600) and methods for reducing noise in capacitive sensors are provided. Embodiments of capacitive sensors include a gain stage (510, 610), a capacitive sensor output, and an active filtered-sampling stage (550, 650). The an active filtered-sampling stage includes a first resistive element (555, 655) coupled to the gain stage output, a second resistive element (565, 670) coupled to the capacitive sensor output, a node (560, 660) between the first and second resistive elements, and a switch (575, 675) selectively coupling the first node to an integrator circuit (550, 650), where the integrator circuit is coupled to the capacitive sensor output.

Abstract: A non-volatile memory device includes a voltage reference generator comprising a programmable voltage reference for generating a voltage signal having a programmable voltage level. In an embodiment, the programmable voltage reference provides the voltage signals for a wordline driver and/or a bitline current generator of the non-volatile memory device. The programmable voltage reference may comprise a Digital-to-Analog converter coupled between first and second supply voltages. A programmable current reference is also disclosed.

Abstract: A device and a method for exchanging information with registers of a physical layer component. The method includes allocating at least one receive buffer for receiving the status information; associating at least one receive buffer descriptor with the at least one receive buffer; sending to a physical layer component a request to read status information stored in a selected status register of the physical layer component; and writing the status information to the at least one receive buffer descriptor.

Abstract: A wireless receiver (100) is provided, comprising: a non-coherent signal detector (130) configured to receive an incoming signal and perform a non-coherent signal analysis in response to a first control signal; a coherent signal detector (140) configured to receive the incoming signal and perform a coherent signal analysis to extract coherently-encoded data from the incoming signal in response to a second control signal; and a receiver circuit (160) configured to process the coherently-encoded data. The non-coherently-encoded data provides an indication as to whether the incoming signal includes the coherently-encoded data, and the coherent signal detector is further configured to enter in a low power sleep state in response to a third control signal.

Abstract: A charge pump charges a first capacitor to a predetermined input voltage using a first switch. The first switch is coupled to a first terminal of the first capacitor for coupling the first terminal to an input terminal that receives the predetermined input voltage. A second switch couples a second terminal of the first capacitor to a reference voltage terminal. Charge is sequentially transferred from the first capacitor to an output capacitance by using the first switch. A portion of charge is sequentially removed from the output capacitance to the input terminal using a third switch and a second capacitor. Configuration logic provides control signals to make one or more of a plurality of charge transfer capacitors switch the same as said first capacitor switches.

Abstract: A semiconductor process and apparatus provide a FinFET device by forming a second single crystal semiconductor layer (19) that is isolated from an underlying first single crystal semiconductor layer (17) by a buried insulator layer (18); patterning and etching the second single crystal semiconductor layer (19) to form a single crystal mandrel (42) having vertical sidewalls; thermally oxidizing the vertical sidewalls of the single crystal mandrel to grow oxide spacers (52) having a substantially uniform thickness; selectively removing any remaining portion of the single crystal mandrel (42) while substantially retaining the oxide spacers (52); and selectively etching the first single crystal semiconductor layer (17) using the oxide spacers (52) to form one or more FinFET channel regions (92).

Abstract: A charge pump system (100) includes a charge pump (102), and a regulator (101) that includes a clock generator (120) for providing a clock signal, a control logic (130) coupled to the clock generator, and a comparator (140) coupled to an output of the charge pump. The comparator includes a plurality of interleaved latches (211, 212, 213 and 214) driven by a single differential (203) stage that compares the output voltage and a reference voltage. The control logic provides timing signals to cause each latch to perform a latch action at different points in time within each period of the clock signal, each point in time equally spaced apart. An output from each latch is coupled to an output stage (205). An output signal from the output stage regulates an output voltage from the charge pump. In one embodiment, the charge pump is coupled to a flash memory (190).

Abstract: An apparatus for detecting one or more predetermined tones transmitted over a communication network, each predetermined tone having a predetermined frequency, comprises a data memory for storing data including the predetermined frequency of each of the one or more predetermined tones, an input for receiving a signal transmitted over the communication network, and a frequency divider for dividing the received signal into at least two frequency sub bands so as to provide at least two components of the received signal in different frequency sub bands. The different frequency sub bands are selected based on the predetermined frequencies of the one or more predetermined tones.

Abstract: A method of reducing processing of fast inverse transform of an input transform block by a video decoder includes determining whether a block type is one of zero, DC, left, and top. If not, the inverse transform is performed and a residual video block is provided as residual information. When the block type is zero, inverse transform is bypassed. When the block type is DC, reduced complexity inverse transform of a DC coefficient is performing and a single residual coefficient is provided as residual information. When the block type is left, reduced complexity inverse transform of a left column of the input transform block is performed and a single column of residual coefficients is provided as residual information. When the block type is top, reduced complexity inverse transform of a top row is performed and a single row of residual coefficients is provided as residual information.

Abstract: A semiconductor device comprising receiver circuitry arranged to receive a dual carrier RF signal comprising a first wanted component and a second wanted component. The receiver circuitry is arranged to down convert the received dual carrier RF signal to create a Very Low Intermediate Frequency, VLIF signal whereby the first wanted component of the received dual carrier signal is subsequently located at a positive VLIF offset with respect to DC, zero hertz, and the second wanted component of the received dual carrier signal is subsequently located at a negative VLIF offset with respect to DC. The semiconductor device further comprises a signal processing logic module arranged to receive the VLIF signal and to separate the first and second wanted components of the received signal.

Abstract: An approach is provided to manage test transactors that interface with components of a hardware design. A first set of transactors is launched with the first set of transactors sending stimuli to various components that correspond to the first set of transactors. A manager receives signals when transactors of the first set have completed at which point a second set of transactors is identified that are dependent upon the first set transactors that completed. The second set of transactors is launched by the manager. The manager further facilitates transmission of data used by the various transactors. Transactors generate and provide stimuli to various components included in a hardware design, such as a System-on-a-Chip (SoC). Results from the hardware design are passed to the transactors which, in turn, pass the results back to the manager. In this manner, results from one transactor may be made available as input to another transactor.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type and a first doping concentration. A first semiconductor region, used as drain, of the first conductivity type has a lower doping concentration than the semiconductor layer and is over the semiconductor layer. A gate dielectric is over the first semiconductor region. A gate electrode over the gate dielectric has a metal-containing center portion and first and second silicon portions on opposite sides of the center portion. A second semiconductor region, used as a channel, of the second conductivity type has a first portion under the first silicon portion and the gate dielectric. A third semiconductor region, used as a source, of the first conductivity type is laterally adjacent to the first portion of the second semiconductor region. The metal-containing center portion, replacing silicon, increases the source to drain breakdown voltage.

Abstract: A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).

Abstract: A method and system for sampling video data uses re-sampling filters having lengths optimized relative to a quantization parameter of video processing. The method uses modeling of an optimal length of the re-sampling filter as a function of the quantization parameter to derive empirical formulas and a look up table for optimal lengths of re-sampling filters. The resulting re-sampling filters are selectively adapted for sampling video data having different bit rates.

Abstract: A fault detection apparatus comprises a signal translation stage having an input arranged to receive an input waveform derived from a signal for a capacitive load. The signal translation stage is arranged to generate a translated output signal representative of at least an aspect of the input waveform. The apparatus also comprises a detection stage arranged to receive the translated output signal from the signal translation stage and analyse a first part and a second part of the translated output signal respectively corresponding to a first step function and a second step function, the first and second step functions being opposite in direction of transition. The analysis performed by the detection stage is a comparison of the first and second parts of the translated output signal respectively with an expected first part and an expected second part of the translated output signal.

Abstract: A device for detecting synchronization pulses in a video signal is disclosed. The device includes a transistor. The base-emitter voltage of the transistor is maintained below a threshold level in response to receiving active video information. The base-emitter voltage is increased above the threshold level in response to receiving synchronization information, whereby the transistor is turned on to generate an asserted synchronization signal. Accordingly, in response to active video information being received and the transistor being off, the magnitude of the synchronization signal is set to a first level and in response to synchronization information being received, and the transistor being on, the magnitude is set to a second level. The synchronization signal generated by the transistor is processed to provide both horizontal and vertical synchronization signals.

Abstract: A disclosed RF circuit includes a power amplifier that produces an RF output signal, a detector to generate a detector signal indicative of a power of the RF output signal, and an offset unit to produce an offset signal that indicates low supply voltage conditions. The power of the RF output signal is reduced, at least in part, by a control signal reflecting a combination of the detector signal and the offset signal. The circuit may include a transmitter to provide an RF input signal to the power amplifier. The transmitter may receive the control signal and adjust a power of the RF input signal based on the control signal. The detector may produce a control current indicative of the RF output signal power. The offset unit produces the offset signal based on a difference between the supply voltage and a nominal supply voltage value.