Abstract: A method and system for testing an electronic device is disclosed. The method includes loading a first test into a test pattern generator of a first device and generating a first test pattern at the test pattern generator. A second test seed is loaded into the test pattern generator while the first test pattern is being generated. In one embodiment, the state of the test pattern generator is modified based upon the second test seed, and the first test seed.

Abstract: A multi-port memory device having a storage node, a precharge node, a first, second, third, and fourth transistor, and a control module. The first transistor includes a current electrode connected to the storage node, another current electrode connected to a first bit line, and a gate connected to a first wordline. The second transistor includes a current electrode connected to the storage node, another current electrode connected to a second bit line, and a gate connected to a second wordline. The third transistor includes a current electrode connected to the reference node, another current electrode connected to the first bit line, and a gate. The fourth transistor includes a current electrode connected to the precharge node, another current electrode connected to the second bit line, and a gate. The control module deactivates the fourth transistor in response to a dummy access of the first storage module at the second transistor.

Abstract: A method of processing a code division multiple access signal comprises receiving a CDMA signal; processing the received CDMA signal with a CDMA detector; and extracting control channel information from the processed signal. The extracted control channel information is used to equalize a subsequent received CDMA signal, to make estimation of equalizer coefficients more reliable and increasing average data throughput.

Abstract: A disclosed RF circuit includes a power amplifier that produces an RF output signal, a detector to generate a detector signal indicative of a power of the RF output signal, and an offset unit to produce an offset signal that indicates low supply voltage conditions. The power of the RF output signal is reduced, at least in part, by a control signal reflecting a combination of the detector signal and the offset signal. The circuit may include a transmitter to provide an RF input signal to the power amplifier. The transmitter may receive the control signal and adjust a power of the RF input signal based on the control signal. The detector may produce a control current indicative of the RF output signal power. The offset unit produces the offset signal based on a difference between the supply voltage and a nominal supply voltage value.

Abstract: A system and method for sharing a single synchronous dynamic random access memory (SDRAM) unit between two chips, each having an SDRAM controller. Each SDRAM controller is effectively divided into a control block and a data block. The first SDRAM controller drives or reads directly from the SDRAM unit's data bus instead of employing a dedicated data bus for communication between the first and second SDRAM units. The data section of the second SDRAM controller responds to requests from the first SDRAM controller as if the requests had come from the second SDRAM controller's own control block. In other embodiments of the present invention, the second SDRAM controller can accept control signals generated by the first SDRAM. If the second SDRAM controller detects that the first SDRAM controller is initiating a request, the second SDRAM controller terminates any active requests of its own using burst termination.

Abstract: A method for race prevention includes: selectively providing data or scan data to a input latching logic, activating the input latching logic for a first scan mode activation period, introducing a substantial time shift between the first scan mode activation period and a second scan mode activation period, and activating a output latching logic, connected to the input latching logic for a second scan mode activation period. A device having race prevention capabilities includes: an interface logic, a input latching logic, a output latching logic and a control logic. The interface logic is adapted to selectively provide data or scan data to the input latching logic. The control logic is adapted to introduce a substantial time difference between an end point of a first scan mode activation period of the input latching logic and a start point of a second scan mode activation period of the output latching logic.

Abstract: An apparatus and method uses a die having at least one perimeter side with multiple pads. A structure is positioned between the at least one perimeter side and the multiple pads having multiple layers within the die. The structure functions as both a strain gauge and a crack stop. The structure arrests cracks from propagating from the at least one perimeter side to an interior of the die and provides an electrical resistance value as a function of an amount of strain existing where the structure is positioned. In another form the structure is implemented on a substrate such as a printed circuit board rather than in a semiconductor die.

Abstract: An electronic device can include an insulating layer and a fin-type transistor structure. The fin-type structure can have a semiconductor fin and a gate electrode spaced apart from each other. A dielectric layer and a spacer structure can lie between the semiconductor fin and the gate electrode. The semiconductor fin can include channel region including a portion associated with a relatively higher VT lying between a portion associated with a relatively lower VT and the insulating layer. In one embodiment, the supply voltage is lower than the relatively higher VT of the channel region. A process for forming the electronic device is also disclosed.

Abstract: A switch arrangement for providing a drive signal at an output comprises a drive switch coupled to the output of the switch arrangement and a regulating element coupled in series between the drive switch and a power supply input of the switch arrangement. The drive switch is operable to provide the drive signal at the output. The switch arrangement is characterized in that the regulating element is coupled in a cascode arrangement with the drive switch such that in operation the regulating element limits the voltage drop across the drive switch to a predetermined level.

Abstract: A method includes communicating a first message between processors of a multiprocessor system via a coherency interconnect, whereby the first message includes coherency information. The method further includes communicating a second message between processors of the multiprocessor system via the coherency interconnect, whereby the second message includes interprocessor message information. A system includes a coherency interconnect and a processor. The processor includes an interface configured to receive messages from the coherency interconnect, each message including one of coherency information or interprocessor message information. The processor further includes a coherency management module configured to process coherency information obtained from at least one of the messages and an interrupt controller configured to generate an interrupt based on interprocessor message information obtained from at least one of the messages.

Abstract: A non-volatile memory (NVM) cell comprising a layer of discrete charge storing elements, a control gate, and a select gate is provided. The control gate has a first sidewall with a lower portion being at least a first angle 10 degrees away from 90 degrees with respect to substrate. Further, the select gate has a second sidewall with a lower portion being at least a second angle at least 10 degrees away from 90 degrees with respect to the substrate. The NVM cell further comprises a layer of dielectric material located between the first sidewall and the second sidewall.

Abstract: An H bridge circuit includes a gate driver circuit coupled to a gate of an NMOS device. The output of the gate driver circuit is at a voltage from 0.1V to 0.4V during a dead time of the H bridge circuit. The gate voltage of the NMOS device is biased at 0.1˜0.4V to overcome the problems of minority carrier injection and power dissipation as compared with VG=0 in a conventional H bridge circuit.

Abstract: A method for measuring an on resistance in an H-bridge including first and second transistors connected to a first output terminal, third and fourth transistors connected to a second output terminal, and a measurement switch connected to the first and second output terminals. The first and third transistors are connected to a first power supply terminal. The second and fourth transistors are connected to a second power supply terminal. The method includes supplying the first transistor with measurement current during a first period, measuring a first voltage at the first power supply terminal via the third transistor using the second output terminal during the first period, measuring a second voltage at the first output terminal via the measurement switch using the second output terminal during the first period, and determining the on resistance of the first transistor based on the measurement current, first voltage, and second voltage.

Abstract: A device and a method for testing a connectivity between a first device and a second device, the method includes: writing, at a first frequency and in a serial manner, a first test word to a source boundary scan register; writing a content of the source boundary scan register, at a second frequency and in a parallel manner, to a target boundary scan register; wherein the second frequency is higher than the first frequency; reading the content of the target boundary scan register; wherein the source and target boundary scan registers are selected from a first boundary scan register of the first device and a second boundary scan register of the second device; and evaluating a connectivity between the first and second device in response to a relationship between the first test word and the content of the target boundary scan register.

Abstract: A cleaning solution for a semiconductor wafer comprises ammonia, hydrogen peroxide, a complexing agent and a block copolymer surfactant diluted in water. The cleaning solution can be used in single wafer cleaning tools to remove both particulate contaminants and metallic residues.

Abstract: A clock system includes a phase locked loop, a phase divider, and a control module. The phase locked loop (PLL) produces a plurality of phase-offset output oscillations. The phase divider generates a clock signal from one or more of the plurality of phase-offset output oscillations based on a phase divider control signal. The control module generates the phase divider control signal based on a desired setting for the clock signal.

Abstract: A ROM includes a ROM array, an address decoder, a control circuit, a precharge tracker, a precharge circuit, a reference word line, a reference bit line and a reference sense generator. The control circuit generates control signals for reading the ROM. The address decoder enables a bit line and a word line. The precharge tracker generates a programmable precharge signal, which is provided to the precharge circuit for precharging the enabled bit line. A reference word line is enabled based on the programmable precharge signal and the control signals for tracking the enabled word line. A reference bit line is enabled based on the reference word line for tracking the enabled bit line. The reference sense generator generates a programmable sense signal based on the reference bit line, the programmable precharge signal and the control signals for reading a bit cell corresponding to the enabled bit line and word line.

Abstract: A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.

Abstract: A thread switch mechanism and technique for a microprocessor is disclosed wherein a processing of a first thread is completed, and a continuation of a second thread is initiated during completion of the first thread. In one form, the technique includes processing a first thread at a pipeline of a processing device, and initiating processing of a second thread at a front end of the pipeline in response to an occurrence of a context switch event. The technique can also include initiating a instruction progress metric in response the context switch event. The technique can further include enabling completion of processing of instructions of the first thread that are at a back end of the pipeline at the occurrence of the context switch event until an expiry of the instruction progress metric.

Abstract: A tone detector for detecting a tone having a plurality of targeted frequencies comprises a first filter bank providing frequency estimates for an initial indication of a presence of each of the targeted frequencies; a second filter bank being controlled by the frequency estimates and comprising a plurality of filters operating in different frequency bands, each frequency band comprising at least one of the targeted frequencies, each of the filters providing a modified signal; a third filter bank extracting a noise signal from the input signal; a plurality of level control units (LCU) providing normalized modified signals having a constant amplitude; a power estimation module providing a power estimation parameter for each of the modified signals and the noise signal; and a discrimination module controlling a plurality of demodulator modules, each of the demodulator units providing a fine estimate of one of the targeted frequencies.