Abstract: A non-overlapping clock generator circuit supplies clock signals to a stage of a pipelined ADC, which includes parallel switched capacitor circuitry. The non-overlapping clock generator circuit includes: a first trigger generation circuit that generates first and second trigger signals; a second trigger generation circuit that generates third and fourth trigger signals; a first clock generation branch that receives the first, second and fourth trigger signals and generates first sampling cycle and delayed sampling cycle clock signals; a second clock generation branch that receives the first, second and third trigger signals and generates second sampling cycle and delayed sampling cycle clock signals; a third clock generation branch that receives the second trigger signal and generates first gain cycle and delayed gain cycle clock signals; and a fourth clock generation branch that receives the first trigger signal and generates second gain cycle and delayed gain cycle clock signals.

Abstract: An integrated circuit including a state retention node, a conductive clock network shielding and multiple state retention devices for maintaining a state of the integrated circuit during the low power state. The state retention node receives a state retention supply voltage which remains at an operative voltage level during a low power state. The conductive clock network shielding is distributed with clock signal conductors and is coupled to the state retention node. Each state retention device has a supply voltage input coupled to the clock network shielding so that it remains powered during the low power state. The state retention node may be implemented as a minimal set of conductive traces. A state retention buffer may be provided for buffering a power gating signal indicative of the low power state, in which the buffer has a supply voltage input coupled to the clock network shielding.

Abstract: A decoder unit for determining a substance or material structure of a detected object based on signals of a capacitive sensor comprises a distribution determination device arranged to determine a detected distribution relation based on signals of the at least one capacitive sensor; a comparison device arranged to compare the detected distribution relation with at least one predetermined distribution relation, the at least one predetermined distribution relation corresponding to a substance or a material structure and an output device arranged to indicate the result of the comparison carried out by the comparison device.

Abstract: A method (30) of forming a semiconductor package (20) entails applying (56) an adhesive (64) to a portion (66) of a bonding perimeter (50) of a base (22), with a section (68) of the perimeter (50) being without the adhesive (64). A lid (24) is placed on the base (22) so that a bonding perimeter (62) of the lid (24) abuts the bonding perimeter (50) of the base (22). The lid (24) includes a cavity (25) in which dies (38) mounted to the base (22) are located. A gap (70) is formed without the adhesive (64) at the section (68) between the base (22) and the lid (24). The structure vents from the gap (70) as air inside the cavity (25) expands during heat curing (72). Following heat curing (72), another adhesive (80) is dispensed in the section (68) to close the gap (70) and seal the cavity (25).

Abstract: Apparatus, systems, and fabrication methods are provided for sensing devices. An exemplary sensing device includes a first sensing arrangement to measure a first property and provide one or more measured values for the first property, a second sensing arrangement to measure a second property, a storage element coupled to the second sensing arrangement to maintain a stored value for the second property measured by the second sensing arrangement, and a control system coupled to the first sensing arrangement and the storage element to determine one or more calibrated measurement values for the first property using the one or more measured values for the first property from the first sensing arrangement and the stored value for the second property.

Abstract: A receiving node for receiving data packets in a packet communications system comprises a buffer for storing data packets received at the receiving node and for releasing the stored data packets to an application element of the receiving node. A buffer window defines a time period in which data packets are received at the buffer. A position of the buffer window is moved in time periodically, and a stored data packet is released when it is at an end of the buffer window.

Abstract: A semiconductor device comprising processing logic. The processing logic is arranged to configure interleaver logic to re-order data symbols of a data stream according to a quadrature permutation polynomial function. The processing logic is further arranged to: divide a cyclic group of values defined by the QPP function into a set of subgroups, the set of subgroups being capable of being defined by a set of linear functions; derive inverse functions for the set of linear functions defining the subgroups; and configure the interleaver logic to load the data symbols of the data stream into a buffer at locations within the buffer corresponding to a cyclic group of values representative of the inverse function for the QPP function based on the inverse functions of the set of linear functions defining the subgroups.

Abstract: A method for fabricating a thin package that encapsulates a capped MEMS device electrically coupled with one or more encapsulated semiconductor devices is provided. A wafer-level packaging methodology is used in which the capped MEMS device is electrically coupled to a package interconnect, which then allows for electrical coupling to the one or more encapsulated semiconductor devices, as well as external connections.

Abstract: Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.

Abstract: In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.

Abstract: A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer into the epitaxial layer, wherein a junction between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region. In operation of the semiconductor device, the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.

Abstract: A method of demultiplexing data, the method comprising: during each of a series of time-units, receiving multiplexed data, wherein the multiplexed data comprises, for each of a plurality of channels, a corresponding quantity of channel data of a corresponding data size; and during each of the series of time-units, for each of the plurality of channels, storing the corresponding quantity of channel data received during that time-unit in a contiguous region of a memory associated with that channel; wherein each of the plurality of channels has a corresponding time-unit-number such that, for each of the plurality of channels, the channel data stored in the corresponding region of the memory for that channel is to be processed after a number of time units equal to the time-unit-number for that channel has passed since channel data for that channel was last processed; characterized in that the method comprises: determining the locations of the regions of the memory based on the data sizes and the time-unit-numbers

Abstract: A computer-implemented method for processing an electronic circuit design, a method of placing vias within an electronic circuit, and an electronic circuit produced utilizing such method(s) are disclosed. A method embodiment for processing an electronic circuit design comprises accessing, utilizing a computer, data which represents an electronic circuit design, identifying a via metallization feature associated with at least one interconnect metallization feature of the electronic circuit design utilizing data which represents the electronic circuit design. The described method embodiment further comprises evaluating a spacing design rule check on the via metallization feature of the electronic circuit design utilizing an area occupied by the at least one interconnect metallization feature.

Abstract: A tamper detector has input and output pins for connection to ends of a tamper detection circuit, and a corresponding set of linear feedback shift registers (LFSRs) timed by clock signals for generating pseudo-random coded detection signals as a function of seed values and of a generator polynomial defined by feedback taps. A comparator compares signals received from the detection circuit with the coded detection signals. A multiplexer provides the coded detection signal selectively from the LFSRs to the output pin and the comparator. A controller varies the seed values for different cycles of values of the pseudo-random coded detection signals. The controller also controls the generator polynomial and a frequency of the clock signals for different cycles of values of the pseudo-random coded detection signals.

Abstract: Embodiments of semiconductor devices and methods of their formation include providing a semiconductor substrate having a top surface, a bottom surface, an active region, and an edge region, and forming a gate structure in a first trench in the active region of the semiconductor substrate. A termination structure is formed in a second trench in the edge region of the semiconductor substrate. The termination structure has an active region facing side and a device perimeter facing side. The method further includes forming first and second source regions of the first conductivity type are formed in the semiconductor substrate adjacent both sides of the gate structure. A third source region is formed in the semiconductor substrate adjacent the active region facing side of the termination structure. The semiconductor device may be a trench metal oxide semiconductor device, for example.

Abstract: A semiconductor wafer includes a die, an edge seal, a bond pad, a plating bus, and trace. The die is adjacent to a saw street. The edge seal is along a perimeter of the die and includes a conductive layer formed in a last interconnect layer of the die. The bond pad is formed as part of metal deposition layer above the last interconnect layer or part of the last interconnect layer. The plating bus is within the saw street. The trace is connected to the bond pad and to the plating bus (1) over the edge seal, insulated from the edge seal, and formed in the metal deposition layer or (2) through the edge seal and insulated from the edge seal.

Abstract: A technique for detecting a leaky bit of a non-volatile memory includes erasing cells of a non-volatile memory. A bias stress is applied to the cells subsequent to the erasing. An erase verify operation is performed on the cells subsequent to the applying a bias stress to the cells. Finally, it is determined whether the cells pass or fail the erase verify operation based on whether respective threshold voltages of the cells are below an erase verify level.

Abstract: A semiconductor device is formed in a semiconductor layer. A gate stack is formed over the semiconductor layer and comprises a first conductive layer and a second layer over the first layer. The first layer is more conductive and provides more stopping power to an implant than the second layer. A species is implanted into the second layer. Source/drain regions are formed in the semiconductor layer on opposing sides of the gate stack. The gate stack is heated after the step of implanting to cause the gate stack to exert stress in the semiconductor layer in a region under the gate stack.

Abstract: A system comprises at least two random access memory (RAM) elements arranged to store data redundantly. The system further comprises RAM routing logic comprising comparison logic operably coupled to the at least two RAM elements and arranged to compare redundant data read from the at least two RAM elements, and check and validation logic, independent of the RAM routing logic, operably coupled to the at least two RAM elements and arranged to additionally detect an error in the redundant data read from the at least two RAM elements and provide an error indication signal to the RAM routing logic in response thereto. The RAM routing logic further comprises selection logic arranged to dynamically select redundant data from one of the at least two RAM elements based on the comparison of the redundant data and the error indication signal.

Abstract: An integrated circuit design tool apparatus including a processing resource arranged to support a circuit simulator, a circuit simulator interrogator, and a well distance calculator is provided. The circuit simulator interrogator communicates first and second well distance values separately to the circuit simulator and receives first and second performance parameter value back from the circuit simulator interrogator in response. The well distance calculator determines a performance parameter limit value, and projects, substantially linearly, a well distance change value in respect of the performance parameter limit value using the first and second performance parameter values, the performance parameter limit value and a trial well distance change value. Also, a well distance change characterizing equation using the well distance change value projected is used in order to obtain the minimum well distance value associated with the performance parameter limit value.