Abstract: Through substrate vias for back-side electrical and thermal interconnections on very thin semiconductor wafers without loss of wafer mechanical strength during manufacturing are provided by: forming (101) desired device regions (21) with contacts (22) on the front surface (19) of an initially relatively thick wafer (18?); etching (104) via cavities (29) partly through the wafer (18?) in the desired locations; filling (105) the via cavities (29) with a conductive material (32) coupled to some device region contacts (22); mounting (106) the wafer (18?) with its front side (35) facing a support structure (40); thinning (107) the wafer (18?) from the back side (181) to expose internal ends (3210, 3220, 3230, 3240, etc.) of the conductive material filled vias (321, 322, 323, 324, etc.); applying (108) any desired back-side interconnect region (44) coupled to the exposed ends (3210, 3220, 3230, 3240, etc.

Abstract: According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (IPD) (72), is provided. An insulating dielectric layer (32) having a thickness (36) of at least 4 microns is formed over a silicon substrate (20). At least one passive electronic component (62) is formed over the insulating dielectric layer (32).

Abstract: Methods, devices and systems are provided for word synchronizing multiple serial data bitstreams (106) with a serial framing signal (106A). Offset values (420) are determined (512) from the relative locations of predetermined data correlation values (107) stored within the data buffers during a correlation mode to indicate the amount of skew observed between the framing channel and each of serial data channels. Data received during subsequent operation of each data stream is stored a buffer (402), and the framing signal (106A) is monitored to identify a boundary between data words. When a frame boundary occurs, parallel data is extracted from the buffer using the previously-stored offset values to compensate for bit skew between the data and framing channels.

Abstract: A cap layer for a metal feature such as a copper interconnect on a semiconductor wafer is formed by immersion plating a more noble metal (e.g. Pd) onto the copper interconnect and breaking up, preferably by mechanical abrasion, loose nodules of the noble metal that form on the copper interconnect surface. The mechanical abrasion removes plated noble metal which is only loosely attached to the copper surface, and then continued exposure of the copper surface to immersion plating chemicals leads to plating at new sites on the surface until a continuous, well-bonded noble metal layer has formed. The method can be implemented conveniently by supplying immersion plating chemicals to the surface of a wafer undergoing CMP or undergoing scrubbing in a wafer-scrubber apparatus.

Abstract: A clock circuit which may include a first clock input for receiving a first clock signal and a second clock input for receiving a second clock signal. A clock calibration unit is connected to the first clock input and the second clock input. The calibration unit may calibrate the second clock signal relative to the first clock signal. The clock calibration unit may have a calibration output for outputting a calibrated clock signal. The clock circuit may include a switch unit connected to the first clock input and the calibration output. The switch unit can select a selected clock signal selected from the first clock signal and the calibrated signal. The switch unit has a switch output for outputting the selected clock signal. A switch control unit is connected to the switch unit for controlling which signal is selected based on a selection criterion and a clock circuit output is connected to the switch unit for outputting the selected clock signal.

Abstract: A transceiver 400 is provided in an ultrawide bandwidth device, which includes an antenna 110, a transmitter circuit 145, and a receiver circuit 165. A transmitter amplifier 440 is provided between the antenna 110 and the transmitter circuit 145, and is configured to have an operational transmitter output impedance when the transceiver 400 is in a transmit mode and an isolation transmitter output impedance when the transceiver 400 is in a receive mode. A receiver amplifier 460 is provided between the antenna 110 and the receiver circuit 165, and is configured to have an operational receiver input impedance when the transceiver 400 is in a receive mode and an isolation receiver input impedance when the transceiver 400 is in a transmit mode. The isolation transmitter output impedance is greater than the operational receiver input impedance, and the isolation receiver input impedance is greater than the operational transmitter output impedance.

Abstract: A method and data processing system allocates entries in a branch target buffer (BTB). Instructions are fetched from a plurality of instructions and one of the plurality of instructions is determined to be a branch instruction. A corresponding branch target address is determined. A determination is made whether the branch target address is stored in a branch target buffer (BTB). When the branch target address is not stored in the branch target buffer, an entry in the branch target buffer is identified for allocation to receive the branch target address based upon stored metrics such as data processing cycle saving information and branch prediction state. In one form the stored metrics are stored in predetermined fields of the entries of the BTB.

Abstract: A method for efficiently calculating signal thresholds for use in signal processing is described. The method computes and stores a cumulative histogram and a weighted cumulative histogram. The method then provides a first estimate for a threshold based on a single ratio. The method next performs an iterative computation to get to the ultimate threshold result. Method iterations only require multiplication and addition operations on the stored values making the method well suited for implementation in fixed-point digital signal processors.

Abstract: Method in a diversity antenna GMSK receiver of determining interference canceling equalizers and corresponding equalizers are described. The method includes providing a plurality of GMSK received signals; de-rotating and splitting each of the plurality of received signals into in phase and quadrature parts to provide a multiplicity of real valued branches; calculating linear equalizers for each of a multiplicity of subsets of the multiplicity of real valued branches; and providing an interference canceling equalizer for each of the multiplicity of real valued branches, each interference canceling equalizer corresponding to a weighted combination of the linear equalizers. A corresponding equalizer includes eight linear equalizers processing four branch signals corresponding to real (I) and quadrature (Q) parts of a GMSK diversity signal from two antennas.

Abstract: Methods and apparatus are described for semiconductor devices. A method comprises providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor, and without removing the first mask, forming a Schottky contact of a first material on the exposed portion of the semiconductor, then removing the first mask, and using a further mask, forming a step-gate conductor of a second material electrically coupled to the Schottky contact and overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.

Abstract: A method for patterning a layer on a semiconductor substrate includes forming a layer of a semiconductor substrate and exposing the layer to light. The light travels through a second pellicle that is manufactured by a method that includes determining a first transmission of a first light through a first pellicle, wherein the first light is normal to the first pellicle, determining a second transmission of a second light through the first pellicle, wherein the second light is not normal to the first pellicle, and modifying the first pellicle to form a second pellicle using the first and second transmission.

Abstract: A digital tuning system (250) for changing a cutoff frequency of an analog filter (132) includes digital synthesizers (292 and 294) for producing a two-tone calibration signal (196) applied to an input of the filter after a quality factor of the filter is increased. The filter includes at least one R/C circuit with two resistors (304 and 306) for changing the quality factor and arrays (308 and 310) of capacitors for changing the cutoff frequency. The amplitude of the magnitude responses (409 and 411) of the filter to each tone (405 and 407) is measured by a two discrete Fourier transform single-frequency bin power detection circuits (253 and 254) while the filter is sequenced through a plurality of capacitance settings. An optimal capacitance for the R/C circuit is selected by comparing, to a pre-selected value, a difference between the responses of the filter to each tone, for each capacitance setting.

Abstract: A system, computer program and a method, the method for scheduling processor entity tasks in a multiple-processing entity system includes: receiving task data structures from multiple processing entities; wherein a task data structure represents a task to be executed by a processing entity; and scheduling an execution of the tasks by a multiple purpose entity.

Abstract: A method for forming a via, comprising (a) providing a structure comprising a mask (210) disposed on a semiconductor substrate (203), wherein the structure has an opening (215) defined therein which extends through the mask and into the substrate, and wherein the mask comprises a first electrically conductive layer; (b) depositing a second electrically conductive layer (219) such that the second conductive layer is in electrical contact with the first conductive layer, the second conductive layer having a first portion which extends over the surfaces of the opening and a second portion which extends over a portion of the mask adjacent to the opening; (c) removing the second portion of the second conductive layer; and (d) depositing a first metal (221) over the first portion of the second conductive layer.

Abstract: A device for testing noise immunity of a circuit includes: an analog circuit, an internal stable reference signal source, an internal power supply module to receive a high level voltage supply, and a signal modulator to provide a noisy signal to the power supply module. The power supply module outputs a noisy power supply to the circuit, in response to the noisy signal, and the device outputs a signal representative of a noise immunity of the circuit. A method includes: providing a high level supply voltage to an internal power supply module, receiving signals representative of the performance of an analog circuit, providing a noisy signal to an input of the power supply module, providing a noisy supply voltage to the circuit, by the power supply module, in response to the noisy signal, and evaluating a noise immunity characteristic of the circuit in response to the received signals.

Abstract: An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.

Abstract: A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.

Abstract: A circuit includes a plurality of selection circuits. Each of the plurality of selection circuits has a first input, a second input, a control input, and an output. Each of the first inputs receives one of a plurality of correlated signals. Each of the second inputs receives one of a plurality of uncorrelated signals. Each of the control inputs receives a correlation mode control signal, and each of the outputs provides the one of the plurality of correlated signals or the one of the plurality of uncorrelated signals based on the correlation mode control signal. The circuit further includes a population count circuit having a plurality of data inputs coupled to receive the outputs of the plurality of selection circuits. The population count circuit provides a population count for the plurality of data inputs. The population count may be an approximate count or an accurate count.

Abstract: A method for processing a plurality of symbol streams is provided. The method includes receiving a first symbol stream, wherein the first symbol stream has a corresponding first number of retransmissions. The method further includes receiving a second symbol stream, wherein the second symbol stream has a corresponding second number of retransmissions. The method further includes selecting the first symbol stream for decoding, if the first number of retransmissions is greater than the second number of retransmissions.

Abstract: A differential communication bus comprising a master module and a plurality of slave modules connected to at least first and second conductors whereby to communicate between the master and slave modules. The master module comprises a driver for applying first and second voltages respectively to the first and second conductors and for sourcing and sinking currents in the first and second conductors. The driver controls a difference between the first and second voltages and a common mode value of the first and second voltages. The driver includes first sourcing and sinking current limiters and second sourcing and sinking current limiters for limiting the currents in the first and second conductors. The master module is selectively responsive to a fault condition triggering simultaneous activation of the first and second sourcing current limiters or of the first and second sinking current limiters to disable the driver.