Abstract: A polishing pad can include a first layer and a second layer. The first layer can have a first polishing surface and a first opening. The second layer can have an attaching surface and a second opening substantially contiguous with the first opening. The polishing pad can further include, a pad window lying within the first opening. The pad window can include a second polishing surface. When the pad would be attached to a platen, the first and second polishing surfaces can lie along a same plane, and an opposing surface of the pad window can abut an exterior surface of a platen window. In another aspect, a polishing apparatus can include an exterior surface of a platen window abutting the polishing pad. In still another aspect, a process of polishing can include polishing a workpiece such that the pad window contacts the workpiece and the platen window simultaneously.

Abstract: Apparatus and method for bus matching. The method includes: receiving data transfer characteristics at a first endian mode and at a second endian mode; determining a connectivity of multiple devices to an interfacing bus in response to the data transfer characteristics and in response to a relationship between a width of the interfacing bus and a width of each device interface; wherein at least one device interface is connected in parallel to multiple interfacing bus portions; and configuring a control logic such as to provide control signals representative of a transfer of data over the interfacing bus; whereas the control logic is configured in response to the connectivity.

Abstract: A device includes a current source circuit to separately provide a first current and a second current and a thermal detection device coupleable to the output of the current source circuit. The device further includes a voltage detection circuit to provide a first indicator of a first voltage representative of a voltage at the thermal detection device in response to the second current and a second indicator of a second voltage representative of a voltage difference between the voltage at the thermal detection device in response to the second current and a voltage at the voltage detection device in response to the first current. The device further includes a temperature detection circuit to provide an over-temperature indicator based on the first indicator and the second indicator, wherein an operation of a circuit component of the device can be adjusted based on the over-temperature indicator.

Abstract: A correlator (140) for de-spreading a spread-spectrum signal includes a state machine (205), a frequency correction look-up table (207), a pseudorandom code generator (209), and a correlator structure (301 and 801). The spread-spectrum signal includes symbols, and each symbol includes a plurality of chips. The correlator structure includes a plurality of taps (309 and 809) at which a coordinate rotation digital computer (CORDIC) operation is performed to determine an offset from a nominal carrier frequency of the spread-spectrum signal and to change a phase of each chip of a received symbol, in order to correct a carrier frequency of the spread-spectrum signal while de-spreading the spread-spectrum signal.

Abstract: A method for assembling a stackable semiconductor package includes providing a substrate having a first surface and a second surface. The first surface includes bond pads and one or more die pads. Conductive bumps are formed on the bond pads and one or more semiconductor dies are attached to the one or more die pads. The first surface of the substrate, the semiconductor dies and the conductive bumps are placed in a side-gate molding cast and a mold material is supplied to the first surface of the substrate to form a stackable semiconductor package. Similarly formed semiconductor packages may be stacked, one on another to form a stacked semiconductor package.

Abstract: A lead frame having a coating of organic compounds on its lead fingers prevents tin and flux from contaminating the lead fingers after die attach. The coating is removed prior to wire bonding. The coating allows for reliable second bonds (bond between wires and lead fingers) to be formed, decreasing the likelihood of non-stick and improving wire peel strength.

Abstract: A charge-based voltage multiplier device comprising a charge-pump circuit and a charge-pump controller is provided. The charge-pump circuit is configured to multiply an input voltage signal (Vin) into an output voltage signal (Vout), the charge-pump circuit includes a plurality of charge-pump stages, wherein at least one of the charge-pump stages includes a weighted capacitor array of pump cells. The charge-pump controller is configured to provide a pump cell select to selectively control the weighted capacitor array of pump cells of the at least one of the charge-pump stages of the charge-pump circuit.

Abstract: A semiconductor package (10) including a pressure sensor die (14) has an interconnect layer (22) formed over a first major surface of the pressure sensor die (14). An encapsulant (18) encapsulates a second major surface and sides of the pressure sensor die (14). A cavity (32) extends through the interconnect layer (22) to the first major surface of the pressure sensor die (14). The interconnect layer (22) allows for the assembly of a low-profile package.

Abstract: A pulse width modulation (PWM) frequency converter converts an input PWM signal to an output PWM signal having a different frequency while maintaining a substantially equal duty ratio. The PWM frequency converter samples the input PWM signal for a PWM cycle using a sampling clock. A filter module filters the resulting set of one or more PWM parameters to compensate for noise introduced by potential clock mismatch, clock jitter, ambient variations, and other non-deterministic issues, thereby generating filtered PWM parameters. The sampling employed by the filter module compares a difference between the one or more current PWM parameters and previous (or historical) PWM parameters from an earlier sampled PWM cycle to a predetermined change threshold in determining a filtered set of one or more PWM parameters. The filtered set of one or more PWM parameters then is used to generate one or more corresponding PWM cycles of the output signal.

Abstract: A video adjustment system for processing video information is disclosed which includes a motion analyzer and an adjustment module. The motion analyzer determines a motion level metric of the video information based on at least one motion parameter. The adjustment adjusts an initial dynamic light scaling factor to provide an adjusted dynamic light scaling factor based on the motion level. The dynamic light scaling factor may be used for luminance compensation and backlight display scaling. The motion level may be based on any type of motion information, such as motion vector information or information indicating a scene change. A distortion module may perform a distortion evaluation of the video information for calculating the initial scaling factor. Alternatively, the distortion module may include a memory which stores predetermined scaling factors based on statistical distortion level characterization.

Abstract: A microprocessor has a low-power mode and a non-low power mode. The microprocessor includes a processor core for executing instructions provided to the microprocessor and a clock providing a clock signal, which in the non-low power mode has a first frequency and in the low power mode has a second frequency lower than the first frequency. A hardware timer is present, for scheduling an execution of an event by the microprocessor at a future point in time. The hardware timer is connected to the clock for determining a period of time between a current point in time and a point in time the event based on a number of clock cycles of the clock signal. A timer controller can determine, when the data processing system switches from the low power mode to the non-low power mode, a number of clock cycles of a clock signal with the first frequency that corresponds to a low-power mode period during which the microprocessor has been in the low power mode and adjusting the hardware timer based on the determined number.

Abstract: A method is provided for operating a wireless local device. In this method a local device receives a beacon for a current superframe in a common signal format. The beacon includes time slot assignment information. The local device then determines a device format for the transmission of data to a remote device based on format determination information. The device format can be one of a common signal format, and one or more wireless formats. The local device then determines one or more remote device time slots in the superframe assigned for transmission of the data to the remote device based on the time slot assignment information. Finally, the local device transmits the data in the one or more remote device time slots to the remote device using the device format.

Abstract: A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.

Abstract: A method for managing under-runs and a device having under-run management capabilities. The method includes retrieving packets from multiple buffers, monitoring a state of a multiple buffers, determining whether an under-run associated with a transmission attempt of a certain information frame from a certain buffer occurs; if an under-run occurs, requesting a certain information frame transmitter to transmit predefined packets while ignoring packets that are retrieved from the certain buffer, until a last packet of the information frame is retrieved from the certain buffer; and notifying a processor that an under-run occurred after at least one predefined packet was transmitted; wherein each buffer out of the multiple buffers is adapted to store a fraction of a maximal sized information frame.

Abstract: In one embodiment, a photoresist is lithographically patterned to form an array of patterned photoresist portions having a pitch near twice a minimum feature size. Fluorine-containing polymer spacers are formed on sidewalls of the patterned photoresist portions. The pattern of the fluorine-containing polymer spacers is transferred into an underlying layer to form a pattern having a sublithographic pitch. In another embodiment, a first pattern in a first photoresist is transferred into a first ARC layer underneath to form first ARC portions. A planarizing second optically dense layer, a second ARC layer, and a second photoresist are applied over the first ARC portions. A second pattern in the second photoresist is transferred into the second ARC layer to form second ARC portions. The combination of the first ARC portions and second ARC portions function as an etch mask to pattern an underlying layer with a composite pattern having a sublithographic pitch.

Abstract: A semiconductor process and apparatus includes forming <100> channel orientation CMOS transistors (24, 34) with enhanced hole mobility in the NMOS channel region and reduced channel defectivity in the PMOS region by depositing a first tensile etch stop layer (51) over the PMOS and NMOS gate structures, etching the tensile etch stop layer (51) to form tensile sidewall spacers (62) on the exposed gate sidewalls, and then depositing a second hydrogen rich compressive or neutral etch stop layer (72) over the NMOS and PMOS gate structures (26, 36) and the tensile sidewall spacers (62). In other embodiments, a first hydrogen-rich etch stop layer (81) is deposited and etched to form sidewall spacers (92) on the exposed gate sidewalls, and then a second tensile etch stop layer (94) is deposited over the NMOS and PMOS gate structures (26, 36) and the sidewall spacers (92).

Abstract: An electronic device can include an interconnect level including a bonding pad region. An insulating layer can overlie the interconnect level and include an opening over the bonding pad region. In one embodiment, a conductive stud can lie within the opening and can be substantially encapsulated. In another embodiment, the electronic device can include a barrier layer lying along a side and a bottom of the opening and a conductive stud lying within the opening. The conductive stud can substantially fill the opening. A majority of the conductive stud can lie within the opening. In still another embodiment, a process for forming an electronic device can include forming a conductive stud within the opening wherein from a top view, the conductive stud lies substantially completely within the opening. The process can also include forming a second barrier layer overlying the conductive stud.

Abstract: A compare cycle of a comparator includes a precharge phase and a compare phase. During the precharge phase, a node of the comparator is precharged to a defined voltage. In addition, during the precharge phase an input transistor of the comparator is decoupled from the node. During the compare phase, an input voltage is coupled to the node via the input transistor. The input transistor is maintained in saturation during both the precharge phase and the compare phase, reducing switching noise.

Abstract: A semiconductor device is formed on a semiconductor layer. A gate dielectric layer is formed over the semiconductor layer. A layer of gate material is formed over the gate dielectric layer. The layer of gate material is patterned to form a gate structure. Using the gate structure as a mask, an implant into the semiconductor layer is performed. To form a first patterned gate structure and a trench in the semiconductor layer surrounding a first portion and a second portion of the semiconductor layer and the gate, an etch through the gate structure and the semiconductor layer is performed. The trench is filled with insulating material.

Abstract: A memory has a pre-amplifier for generating an output signal and a reference signal. The memory includes a comparator for comparing the output signal to the reference signal. The comparator includes a bias stage for generating a bias signal, wherein the bias signal is an average of the output signal and the reference signal. The comparator further includes a first output stage for generating a first comparator output signal by comparing the output signal and the bias signal. The comparator further includes a second output stage for generating a second comparator output signal by comparing the reference signal and the bias signal.