Abstract: A method of forming a circuitry includes providing a substrate comprising a plurality of die. Each die includes a plurality of resistive random access memory (RRAM) storage cells. The method further includes concurrently initializing substantially all of the RRAM storage cells on the same wafer. Initializing can include applying a voltage potential across the RRAM storage cells.

Abstract: A method for protecting terminal elements on a wafer during wafer level fabrication processes entails applying a protective coating to the terminal elements prior to further processing operations. These processing operations may include back side grinding of the wafer and/or saw-to-reveal operations to expose the terminal elements from a cap wafer of a wafer structure. The protective coating can protect the terminal elements from potentially damaging contaminants, such as debris from the grinding or saw-to-reveal operations. Furthermore, the protective coating can protect the bond pads from coming into contact with a rapidly oxidizing environment when exposed to water. The protective coating may be a hot-water soluble thermoplastic material the melts from a solid form to a liquid form at a relatively low temperature to enable application of the protective coating in liquid form onto the terminal elements and clean removal of the protective coating from the terminal elements.

Abstract: A receiver system includes a DC (direct current) offset estimation block configured to capture a plurality of sample pairs, each sample pair including a first sample of a first signal and a second sample of a second signal. The first and second signals are passed through one or more gain elements. The DC offset estimation block is also configured to apply a modified circle-fit algorithm to the plurality of sample pairs to estimate a first DC offset exhibited by the first signal and a second DC offset exhibited by the second signal, the first and second DC offsets generated by the gain elements, the modified circle-fit algorithm includes a magnitude approximation term used to iteratively estimate the first and second DC offsets. The receiver system also includes a DC offset correction block configured to calculate one or more correction control signals based on the first and second DC offsets.

Abstract: Forming a transistor transistor includes forming a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, a set of electrically conductive shield plates, and a shield plate dopant region. A sidewall of the gate aligns with a drain side boundary of the surface region. The drain dopant region is formed within the surface region on the drain side. The drift dopant region is formed within the surface region between the drain side boundary and the drain dopant region. The set of electrically conductive shield plates includes a first shield plate overlying the drift dopant region. The shield plate dopant region is formed within the drift dopant region and underlies the set of shield plates.

Abstract: A method and apparatus for storing trace data within a processing system. The method includes configuring at least one Error Correction Code, ECC, component within the processing system to operate in a trace data storage operating mode, generating trace data at a debug module of the processing system, and conveying the trace data from the debug module to the at least one ECC component for storing in an area of memory used for ECC information.

Abstract: A phase detector for generating a phase difference signal indicative of a phase difference between a first bi-level signal of frequency F1 and a second bi-level signal of frequency F2 is proposed. The phase detector may include first and second detector inputs, first and second flip-flops, a NAND gate, and a first and second overphase detection units. An output of the first overphase detection unit may be connected to a direct input of the second flip-flop and may be arranged to output the level “1” in response to F1?F2 and the level “0” in response to F1>F2. An output of the second overphase detection unit may be connected to a direct input of the first flip-flop and may be arranged to output the level “1” in response to F2?F1 and the level “0” in response to F2>F1.

Abstract: A reference voltage source comprises a bandgap voltage reference circuit having a first node and an output node, the output node being arranged for providing a reference voltage. A curvature correction circuit has an input node connected to the output node and/or to a base of a first bipolar device of the bandgap voltage reference circuit and/or to a base of a second bipolar device of the bandgap voltage reference circuit. The curvature correction circuit has an output node connected to the first node of the bandgap voltage reference circuit. The curvature correction circuit comprises a current source for providing a current having a different temperature dependency than a temperature dependency of a first current through the first bipolar device of the bandgap voltage reference circuit.

Abstract: A method and circuit for a data processing system (20) provide a processor-based partitioned priority blocking mechanism by storing priority levels and associated partition information in special purpose registers (27-29) located at the processor core (26) to enable quick and efficient interrupt priority blocking on a partition basis.

Abstract: A method of generating a video sequence including setting a state of a deblocking control flag in a frame header of a frame to indicate that a deblocking parameter is presented for some but not all layers. A method of processing a received video sequence including determining a state of a deblocking control flag of a frame header and retrieving a deblocking parameter for some but not all layers. A scalable video system including a deblocking control circuit which sets a state of a deblocking control flag in a frame header to indicate that a deblocking parameter is presented for some but not all layers. A scalable video system including a deblocking control circuit which determines the state of a deblocking control flag in a frame header of a received video sequence and which retrieves a deblocking parameter for some but not all layers of the frame.

Abstract: A high density, low power, high performance information system, method and apparatus are described in which perpendicularly oriented processor and memory die stacks (130, 140, 150, 160, 170) include integrated deflectable MEMS optical beam waveguides (e.g., 190) at each die edge (e.g., 151) to provide optical communications (184) in and between die stacks by using a beam control method and circuit to maintain and adjust alignment over time by calibrating and updating X and Y counter values stored in deflection registers (541-542) to control DAC circuitry (546, 548) which generates and supplies deflection voltages to charging capacitors (551, 552) connected to deflection electrodes (195-197) positioned on and around each MEMS optical beam waveguide (193-194) to provide two-dimensional alignment and controlled feedback to adjust beam alignment and establish optical communication links between die stacks.

Abstract: Tooling for molding a packaged semiconductor device includes a clamping plate, a cavity bar, and an attachment mechanism. The cavity bar has a mold half that has a mold cavity for molding the packaged semiconductor device. The mold half has teeth and a space between pairs of adjacent teeth. The teeth and the spaces support bending of leads of a lead frame of the packaged semiconductor device. The attachment mechanism affixes the cavity bar to the clamping plate and permits the cavity bar to slide relative to the clamping plate. This sliding of the cavity bar enables proper alignment with a mating cavity bar to reduce the likelihood of resin bleed.

Abstract: An amplifier system includes a low offset amplifier having a first signal input, a second signal input, an output, a resistive digital to analog converter (RDAC) coupled between a first amplifying terminal and a second amplifying terminal of the amplifier that provides offset control, and a current supply coupled to the RDAC. The amplifier system further includes a low offset amplifier having a first signal input, a second signal input, an output, a resistive digital to analog converter coupled between a first amplifying terminal and a second amplifying terminal of the amplifier that provides offset control, and a current supply coupled to the RDAC. The amplifier system also further includes a load coupled to the output and to the second input of the amplifier and a controller coupled to the RDAC that provides an offset control of the first and second inputs by controlling the RDAC.

Abstract: An input/output (IO) driver circuit is described. The IO buffer driver circuit comprises: at least one input for receiving an input signal and at least one output for providing at least one output signal; and a plurality of switches arranged to provide a variable voltage level between a low voltage value and a high voltage value to the at least one output. The at least one first switch of the plurality of switches is arranged to initiate a voltage change to an intermediate voltage level between the low voltage value and the high voltage value in a first time period. The at least one second switch of the plurality of switches is arranged to continue the voltage change to the low voltage value or the high voltage value in a second time period.

Abstract: A method of assembling semiconductor devices with semiconductor dies of alternative different configurations uses the same substrate panel. The dies of the selected configuration are placed in an array, mounted, and connected to internal electrical contact pads on a first face of the panel using main fiducial markings and an array of subsidiary fiducial markings corresponding universally to arrays of semiconductor dies of the different alternative configurations. The pitch of the subsidiary fiducial markings is equal to the spacing between adjacent rows of the internal electrical contact pads on the panel and is a sub-multiple of the pitch of the array of dies.

Abstract: An IC driver includes a resistor detector to detect whether at least a threshold resistance is present between a pin of the IC driver and the gate of an IGBT. The resistor detector can include a comparator that compares a voltage at the collector of the IGBT to a threshold reference voltage (e.g., ground). In response to drive signals of the IC driver being switched off, a parasitic inductance causes a voltage drop at the emitter of the IGBT, and a commensurate voltage drop at the IGBT collector. If the resistance between the IC driver pin and the IGBT gate is lower than a specified level, the voltage drop at the IGBT collector will be such that the collector voltage falls below the threshold reference voltage. In response, the comparator asserts a signal indicating a fault.

Abstract: An electrostatic discharge, ESD, protection circuit arrangement is connectable to a first pin and a second pin of an electronic circuit and arranged to at least partly absorb an ESD current entering the electronic circuit through at least one of the first pin or the second pin during an ESD stress event. The protection circuit arrangement comprises a first ESD protection circuit arranged to absorb a first portion of the ESD current during a first part of the ESD stress event during which first part a level of the ESD current exceeds a predetermined current threshold; and a second ESD protection circuit arranged to absorb a second portion of the ESD current, the second portion having a current level below the current threshold, at least during a second part of the ESD stress event. The second ESD protection circuit comprises a current limiting circuit arranged to limit a current through at least a portion of the second ESD protection circuit to the current threshold.

Abstract: A circuitry for a computing system comprising a first load/store unit, LSU, and a second LSU as well as a memory arrangement. The first LSU is connected to the memory arrangement via a first bus arrangement comprising a first write bus and a first read bus. The second LSU is connected to the memory arrangement via a second bus arrangement comprising a second write bus and a second read bus. The computing system is arranged to carry out a multiple load instruction to read data via the first read bus and the second read bus and/or to carry out a multiple store instruction to write data via the first write bus and the second write bus.

Abstract: A transistor includes a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, a set of electrically conductive shield plates, and a shield plate dopant region. A sidewall of the gate aligns with a drain side boundary of the surface region. The drain dopant region is within the surface region on the drain side. The drift dopant region is within the surface region between the drain side boundary and the drain dopant region. The set of electrically conductive shield plates includes a first shield plate overlying the drift dopant region. The shield plate dopant region is within the drift dopant region and underlies the set of shield plates.

Abstract: A method and apparatus for optimizing computer program code. The method comprises identifying at least one set of candidate instructions within the computer program code, each candidate instruction comprising an instruction for writing a constant value to memory and the at least one set comprising a plurality of candidate instructions. The method further comprises computing an aggregate constant value for the at least one set of candidate instructions, and replacing the at least one set of candidate instructions with at least one instruction for writing the aggregate constant value to memory.

Abstract: Integrated circuit devices with counter-doped conductive gates. The devices have a semiconductor substrate that has a substrate surface. The devices also have a first well of a first conductivity type, a source of a second conductivity type, and a drain of the second conductivity type. A channel extends between the source and the drain. A conductive gate extends across the channel. The conductive gate includes a first gate region and a second gate region of the second conductivity type and a third gate region of the first conductivity type. The third gate region extends between the first and second gate regions. The devices further include a gate dielectric that extends between the conductive gate and the substrate and also include a silicide region in electrical communication with the first, second, and third gate regions. The methods include methods of manufacturing the devices.