Abstract: A method of manufacturing a microelectronic assembly (100) and a microelectronic device (4100) that include a stacked structure (101). The stacked structure includes a heat spreader (104), at least one die (106) thermally coupled to at least a portion of one side of the heat spreader, at least one other die (108) thermal coupled to at least a portion of an opposite side of the heat spreader, at least one opening (401) in the heat spreader located in a region of between the two die, an insulator (603) disposed in the at least one opening, and electrically conductive material (1308, 1406) in an insulated hole (705) in the insulator. The heat spreader allows electrical communication between the two die through the opening while the insulator isolates the electrically conductive material and the heat spreader from each other.

Abstract: A layered network (10; 11; 12) to provide offload of data in a communication processor (100; 110; 120). The layered network (10; 11; 12) includes a first set (S1) of network elements at a first layer (L1) and a second set (S2) of one or more network elements at a second layer (L2). The network elements of the first set (S1) are configured for processing incoming data and the network elements of the second set (S2) of one or more network elements at the second layer (L2) are configured to process intermediate data received from the first set (S1) of network elements. The network elements of a particular subset (Si1) of the network elements of the first set (Si1) of network elements are connected to only a particular network element (Ei2) of the second set (S2) to transfer the incoming data processed by the network elements of the particular subset (Si1) to the particular network element (Ei2) of the second set (S2).

Abstract: A semiconductor device includes a semiconductor substrate, a charge storage stack over a portion of the substrate. The charge storage stack includes a first dielectric layer, a layer of nanocrystals in contact with the first dielectric layer, a second dielectric layer over and in contact with the layer of nanocrystals, a nitride layer over and in contact with the second dielectric layer, and a third dielectric layer over the nitride layer.

Abstract: A microelectromechanical system (MEMS) sensor device includes a substrate, a support structure supported by the substrate, a membrane supported by the support structure and spaced from the substrate, and a polymer layer covering the membrane.

Abstract: Systems and methods are disclosed for a computer system that includes a first load/store execution unit 210a, a first Level 1 L1 data cache unit 216a coupled to the first load/store execution unit, a second load/store execution unit 210b, and a second L1 data cache unit 216b coupled to the second load/store execution unit. Some instructions are directed to the first load/store execution unit and other instructions are directed to the second load/store execution unit when executing a single thread of instructions.

Abstract: Systems and methods for adaptive error correction codes (ECCs) for electronic memories. In some embodiments, a memory device, may include a first memory having a plurality of address locations, each of the plurality of address locations having a number of storage bits configured to store data and one or more error correction bits corresponding to the data; and a second memory distinct from the first memory, the second memory having a plurality of entries, each of the plurality of entries configured to store one or more operation code bits relating to data stored at a corresponding address location in the first memory, the one or more operation code bits identifying an error correction scheme used to generate the one or more error correction bits at the corresponding address location in the first memory.

Abstract: Systems and methods for multi-frame and frame streaming in a Controller Area Network (CAN) with Flexible Data-Rate (FD). In some embodiments, a method may include creating, by a device coupled to a CAN network configured to support a CAN Flexible Data-Rate (FD) protocol, a data frame comprising a field that indicates a multi-frame or streaming transmission, and transmitting the data frame in the multi-frame or streaming transmission. A CAN node may include message processing circuitry configured to receive a data frame comprising a Data Length Code (DLC) field configured to indicate multi-frame operation or streaming operation. The message processing circuitry may be further configured to receive another data frame in the absence of an arbitration process between the data frames.

Abstract: A method of forming an electronic component includes masking a lead frame to form a mask defining an exposed area, oxidizing the exposed area of the lead frame, wherein the mask inhibits oxidation of an unexposed area, and removing the mask from the lead frame following oxidizing. A lead frame can include a metal sheet patterned to define a pad region and leads. The metal sheet includes metal oxide in a select area. The pad region is substantially free of metal oxide.

Abstract: A data processing system includes first and second power distribution networks to provide power at first and second voltages, and a flip-flop. The second voltage is less than the first voltage. The flip-flop includes a master latch with a power node connected to the first power distribution network, a data signal input, and an output signal output that is driven at the first voltage, and a slave latch with a power node connected to the first power distribution network, an input coupled to the output of the master latch, a slave latch output signal output that is driven by the first voltage, and a feedback circuit with a first latch inverter having a power node connected to the second voltage, an input coupled to the master latch output, and an output terminal to provide an output signal that is driven by the second voltage.

Abstract: The present invention relates to an amplifier circuit, comprising: first to fourth semiconductor amplifiers for controlling first to fourth currents between supply and output terminals, a first input terminal connected to provide a first input signal to a first control terminal of the first semiconductor amplifier and to a fourth control terminal of the fourth semiconductor amplifier, and a second input terminal connected to provide a second input signal to a second control terminal of the second semiconductor amplifier and to a third control terminal of the third semiconductor amplifier. The present invention also relates to a bi-stage amplifier circuit, and to a multi-stage amplifier circuit comprising a cascade of a number of amplifier circuits complying to the present invention, the multi-stage amplifier circuit having a gain control logic prepared to control a gain of at least one of the amplifier circuits.

Abstract: An embodiment of a method of attaching a semiconductor die to a substrate includes placing a bottom surface of the die over a top surface of the substrate with an intervening die attach material. The method further includes contacting a top surface of the semiconductor die and the top surface of the substrate with a conformal structure that includes a non-solid, pressure transmissive material, and applying a pressure to the conformal structure. The pressure is transmitted by the non-solid, pressure transmissive material to the top surface of the semiconductor die. The method further includes, while applying the pressure, exposing the assembly to a temperature that is sufficient to cause the die attach material to sinter. Before placing the die over the substrate, conductive mechanical lock features may be formed on the top surface of the substrate, and/or on the bottom surface of the semiconductor die.

Abstract: A DC to DC converter including a buck converter, a boost converter, and a control unit, wherein the control unit is arranged to calculate an error voltage of the buck converter Verr_buck based on a feedback output voltage Vout_FB of the DC to DC converter and a reference voltage of the buck converter Vref_buck, and wherein the control unit is arranged to calculate an error voltage of the boost converter Verr_boost based on the feedback output voltage Vout_FB of the DC to DC converter and a reference voltage of the boost converter Vref_boost, wherein the reference voltage of the boost converter Vref_boost is shifted by an offset Voffset as compared to the reference voltage of the buck converter Vref_buck.

Abstract: A data processing system includes a command buffer and control circuitry. The command buffer is configured to store pending write requests to a memory in which each pending write request has corresponding write data. The control circuitry is configured to select a pending write request from an entry of the command buffer and send the selected write request to the memory. The selected write request is a partial write request having first write data stored in the entry. Sending the selected write request includes performing a read-modify-write (RMW), wherein the control circuitry is configured to, after a read operation of the RMW, update the pending write request in the entry from a partial write request to a full write request.

Abstract: A differential pair sensing circuit (300) includes control gates (306, 316) for separately programming a reference transistor (350) and a chemically-sensitive transistor (351) to a desired threshold voltage Vt to eliminate the mismatch between the transistors in order to increase the sensitivity and/or accuracy of the sensing circuit without increasing the circuit size.

Abstract: A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically conductive ring between the support substrate and the cap substrate. The electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer bond ring around the semiconductor device.

Abstract: Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode (102). The field plate (108) and charged dielectric layer (106) provide the ability to modulate the electric field or capacitance in the transistor. For example, the charged dielectric layer (106) provides the ability to control the capacitance between the gate electrode (102) and field plate (108). Modulating such capacitances or the electric field in transistors can facilitate improved performance. For example, controlling gate electrode (102) to field plate (108) capacitance can be used to improve device linearity and/or breakdown voltage. Such control over gate electrode (102) to field plate (108) capacitance or electric fields provides for high speed and/or high voltage transistor operation.

Abstract: A run-time integrity checking (RTIC) method compatible with memory having at least portions that store data that is changed over time or at least portions configured as virtual memory is provided. For example, the method may comprise storing a table of page entries and accessing the table of page entries by, as an example, an operating system or, as another example, a hypervisor to perform RTIC on memory in which, as an example, an operating system, as another example, a hypervisor, or, as yet another example, application software is stored. The table may, for example, be stored in secure memory or in external memory. The page entry comprises a hash value for the page and a hash valid indicator indicating the validity status of the hash value. The page entry may further comprise a residency indicator indicating a residency status of the memory page.

Abstract: A simulation system for testing a simulation of a device against one or more violation rules is described. The simulation system comprises a device simulator for executing the simulation of a device using a device design, a device model and a simulation scenario; and one or more violation monitors, one for each violation rule. Each violation monitor comprises a violation information detector for detecting one or more violations of the respective violation rule during the executing of the simulation and, for each violation, determining information representing the respective violation; a violation score unit for calculating, for each violation of the respective violation rule, a violation score in dependence on the information representing the violation and on a violation rule-specific scheme, and a rule score unit for determining, for the respective violation rule, a rule score from the violation scores of the one or more violations during the simulation.

Abstract: A brownout tolerant EEPROM emulator (18) manages memory operations at a volatile memory (20) and non-volatile memory (24) using a plurality of sector status bits (451) and forward/reverse skip flags (452, 453) stored in a sector identification record (45) of each sector to define a plurality of status indicators arranged sequentially to specify a plurality of sector configuration states for each memory sector, and to automatically bypass one or more dead sectors in the non-volatile memory array during forward copydown and reverse search operations.

Abstract: Apparatus (110) for configuring network equipment or devices (101a-101n) during runtime is particularly applicable to network equipment based on QorIQ (trade mark) communication platforms for DPAA (Data Path Acceleration Architecture) optimization purposes and provides a way maintaining an optimal configuration which can change over time acccording to real traffic conditions. The invention may be implemented with any kind of adaptation algorithm for targeting different DPAA features. A flow characteristic function is determined from collected traffic statistics for a multiplicity of traffic flows classified by a common property such as protocol or destination or source. Flow properties are characterised over time, past present and future prediction and in relation to other existing flows based on assigned priorities. A computed flow characteristic function represents the basis for all adaptation algorithms which may be implemented in order to optimise the various DPAA features.