Patents Assigned to Freescale
  • Publication number: 20160061891
    Abstract: A mixed mode integrated circuit, a method of providing a controllable test clock signal to a sub-circuitry of the mixed-mode integrated circuit and a method of detecting current paths causing violations of electromagnetic compatibility standards in the mixed mode integrated circuit are provided. The mixed mode integrated circuit 100 comprises in addition to a clock network 110 an integrated test clock signal generator 140 to generate test clock signals that are provided via controllable multiplexers 150, 160 to an analogue and digital sub-circuitry, respectively, of the mixed-mode integrated circuit. The test clock signals are generated on basis of an input test clock signal having a controllable frequency. The clock network generates clock signals for the sub-circuitries that are used by the sub-circuitries under normal operational conditions. The controllable multiplexers provide either the test clock signal to a specific sub-circuitry or a clock signal received from the clock network.
    Type: Application
    Filed: January 28, 2015
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: PASCAL KAMEL ABOUDA, CELINE HOUNAÏDA ABOUDA, PATRICE BESSE
  • Publication number: 20160061890
    Abstract: IC device comprising a plurality of functional components arranged into self-test cells. The IC device is configurable into a first self-test configuration comprising a first set of self-test partitions. Each self-test partition within the first set comprising at least one self-test cell. Functional components of the self-test cell(s) of each self-test partition within the first set are arranged to be configured into at least one scan-chain for said self-test partition when the IC device is configured into the first self-test configuration. The IC device is configurable into a second self-test configuration comprising a second set of self-test partitions. Each self-test partition within the second set comprising at least one self-test cell. Functional components of the self-test cell(s) of each self-test partition within the second set are arranged to be configured into at least one scan-chain for said self-test partition when the IC device is configured into the second self-test configuration.
    Type: Application
    Filed: August 26, 2014
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: MARKUS REGNER, HEIKO AHRENS, VLADIMIR VORISEK
  • Publication number: 20160063149
    Abstract: An integrated circuit design tool apparatus includes a processing resource configured to support a circuit simulator, a circuit sensitivity optimiser and a circuit sensitivity calculator. The circuit sensitivity optimiser is adapted to communicate to the circuit simulator a first dynamic list of selected devices of the circuit; and a second dynamic list of selected process parameters associated with the selected devices of the first dynamic list. The circuit simulator is configured to communicate to the circuit sensitivity calculator, a performance metrics of the circuit in response thereto. The circuit sensitivity calculator is configured to determine one sensitivity coefficient for each device of the first dynamic list in response thereto. The circuit sensitivity calculator is further configured to determine and communicate to the circuit sensitivity optimiser a variance of the performance metrics and also adapted to gradually determine whether or not to further communicate with the circuit simulator.
    Type: Application
    Filed: March 21, 2013
    Publication date: March 3, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventor: PASCAL CAUNEGRE
  • Publication number: 20160064792
    Abstract: A radio frequency transmission structure couples a RF signal between a first and a second radiating elements arranged at a first and a second sides of a first dielectric substrate, respectively. The RF coupling structure comprises: a hole arranged through the first dielectric substrate, a first electrically conductive layer arranged on a first wall of the hole to electrically connect a first and a second signal terminals, a second electrically conductive layer arranged on a second wall of the hole opposite to the first wall to electrically connect a first and a second reference terminals. The first electrically conductive layer is separated from the second electrically conductive layer. The hole extends beyond the first wall away from the second wall.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: LI QIANG, OLIN LEE HARTIN, RALF REUTER, ZIQIANG TONG
  • Publication number: 20160066052
    Abstract: A television receiver, comprising a television signal input, a tuner, a frame buffer, a control input, a pattern recognition unit, and an electronic program guide unit. In operation, the television signal input receives a television signal. The tuner generates consecutive frames of a selected television channel on the basis of the television signal and is connected to a screen so as to drive the screen to display the frames consecutively. The frame buffer buffers the frames. The control input receives a scheduling request triggered by a user. The pattern recognition unit determines one or more program schedule values in response to the scheduling request, by performing an automatic pattern recognition analysis of one or more frames residing in the frame buffer.
    Type: Application
    Filed: October 30, 2014
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventor: ANDREI MIHAILA
  • Publication number: 20160061898
    Abstract: A method of providing wetting current diagnostics for a load control switch includes changing test switch settings of a detection circuit from an operational configuration to a testing configuration. The test switch settings specify respective states of first and second test switches of the detection circuit. The first and second test switches are connected to a node of the detection circuit through which, in the operational configuration, a wetting current for the load control switch flows. The method includes determining whether a voltage at the node becomes no longer indicative of the operational configuration as a result of the changed test switch settings, returning the test switch settings to the operational configuration, and providing a wetting current fault indication if the voltage at the node fails to return to a level indicative of the operational configuration after returning the test switch settings to the operational configuration.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: William E. Edwards, Anthony F. Andresen
  • Publication number: 20160062810
    Abstract: The present application relates to an apparatus for detecting software interference and the method of operating thereof. A processor and at least one shared resource form a computing shell to execute a first, functional safety critical application and at least one second application in time-shared operation. One or more performance counters are provided to adjust a counter value in response to a performance related event. A reference value storage stores one or more threshold values, each of which is associated with one of the performance counters. A comparator receives the performance counter values, compares the performance counter values with the respective threshold values and generates at least one comparison signal in response to results of the comparisons. An interference indication generator receives the at least one comparison signal and generates at least one interference indication in response to the at least one received comparison signal.
    Type: Application
    Filed: August 27, 2014
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventor: WILHARD CHRISTOPHORUS VON WENDORFF
  • Publication number: 20160061870
    Abstract: An electric power meter for measuring electric power is provided. The power meter has a frequency domain converter arranged to convert a sequence of digital voltage samples from the time domain to a frequency domain obtaining digital voltage frequency components, and to convert a sequence of digital current samples from the time domain to the frequency domain obtaining digital current frequency components. The electric power meter also has a frequency domain correction unit arranged to correct the voltage frequency components and the current frequency components by multiplying at least one frequency component of the current frequency components and the voltage frequency components with a complex correction factor using a complex multiplication unit. Electric power is computed by an energy calculation unit.
    Type: Application
    Filed: August 28, 2014
    Publication date: March 3, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: LUKAS VACULIK, RADOMIR KOZUB, MARTIN MIENKINA, LUDEK SLOSARCIK
  • Patent number: 9275864
    Abstract: A process integration is disclosed for fabricating non-volatile memory (NVM) cells (105-109, 113-115) on a first flash cell substrate area (111) which are encapsulated in one or more planar dielectric layers (116) prior to forming an elevated substrate (117) on a second CMOS transistor area (112) on which high-k metal gate electrodes (119-120, 122-126, 132, 134) are formed using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: March 1, 2016
    Assignee: FREESCALE SEMICONDUCTOR,INC.
    Inventors: Asanga H Perera, Sung-Taeg Kang, Jane A Yater, Cheong Min Hong
  • Patent number: 9276101
    Abstract: A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-43) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49).
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: March 1, 2016
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Bruce M. Green, Karen E. Moore, Olin Hartin
  • Patent number: 9275966
    Abstract: An electronic apparatus includes a base substrate, the base substrate including an interconnect. The electronic apparatus further includes a first die including a first semiconductor device, the first semiconductor device being coupled to the interconnect, and further includes a second die including a second semiconductor device, the second semiconductor device being coupled to the interconnect. The first and second die are attached to the base substrate in opposite orientations.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: March 1, 2016
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Josef C. Drobnik
  • Patent number: 9276008
    Abstract: A process integration is disclosed for fabricating complete, planar non-volatile memory (NVM) cells (110) prior to the formation of high-k metal gate electrodes for CMOS transistors (212, 213) using a planarized dielectric layer (26) and protective mask (28) to enable use of a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: March 1, 2016
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Jon D. Cheek, Frank K. Baker, Jr.
  • Publication number: 20160056234
    Abstract: Deep trench isolation structures and systems and methods including the same are disclosed herein. The systems include a semiconductor device. The semiconductor device includes a semiconductor body, a device region, and the deep trench isolation structure. The deep trench isolation structure is configured to electrically isolate the device region from other device regions that extend within the semiconductor body. The deep trench isolation structure includes an isolation trench, a dielectric material that extends within the isolation trench, a first semiconducting region, and a second semiconducting region. The methods include methods of operating an integrated circuit device that includes a plurality of semiconductor devices that include the disclosed deep trench isolation structures.
    Type: Application
    Filed: August 20, 2015
    Publication date: February 25, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Xu Cheng, Daniel J. Blomberg, Jiang-Kai Zuo
  • Publication number: 20160056094
    Abstract: A semiconductor package includes a substrate, a die mounted on a first side of the substrate, an array of solder balls mounted on a second, opposite side of the substrate, and a signal-routing structure mounted on the first side of the substrate and adjacent to the die. The substrate and the signal-routing structure provide electrical connections between die pads on the die and some of the solder balls.
    Type: Application
    Filed: August 19, 2014
    Publication date: February 25, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventors: KESVAKUMAR V.C. MUNIANDY, Navas Khan Oratti Kalandar
  • Publication number: 20160056114
    Abstract: A device includes a semiconductor substrate having a surface with a trench, first and second conduction terminals supported by the semiconductor substrate, a control electrode supported by the semiconductor substrate between the first and second conduction terminals and configured to control flow of charge carriers during operation between the first and second conduction terminals, and a Faraday shield supported by the semiconductor substrate and disposed between the control electrode and the second conduction terminal. At least a portion of the Faraday shield is disposed in the trench.
    Type: Application
    Filed: August 20, 2014
    Publication date: February 25, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Zihao M. Gao, David C. Burdeaux, Wayne R. Burger, Robert A. Pryor, Philippe Renaud
  • Publication number: 20160056765
    Abstract: In a system comprising a plurality of gain elements configured in parallel to one another, a harmonically tuned filter provides an isolation circuit to prevent odd-mode differential oscillations. A harmonically tuned filter comprises resistors, inductors, and capacitors (RLC) to selectively allow one or more specific harmonics to pass through the isolation circuit to suppress the odd-mode oscillation. Direct current (DC) and other non-harmonically-related frequencies do not pass through the isolation circuit. Since the resistor is used to dissipate specifically the energy of the harmonic frequencies causing the odd-mode oscillation, the current density through the resistor is much lower than the current density of a typical odd-mode resistor without a harmonically tuned filter.
    Type: Application
    Filed: November 21, 2014
    Publication date: February 25, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Kevin Kim, Igor Ivanovich Blednov, Olivier Lembeye, Pascal Peyrot
  • Publication number: 20160054746
    Abstract: An integrated circuit (IC) includes a power grid having first, through fourth nodes for receiving first supply, first ground, second supply, and second ground voltage signals, respectively, a voltage regulator, a reference voltage calibration circuit, a dual-rail sense circuit, and a voltage monitor circuit. The reference voltage calibration circuit receives the first supply, first ground, second supply, and second ground voltage signals and generates a reference voltage signal based on differences between voltage levels of the first supply and ground voltage signals, and the second supply and ground voltage signals. The voltage regulator regulates the first supply voltage signal based on the reference voltage signal and the second supply voltage signal. The dual-rail sense circuit generates a sense signal based on the second supply and ground voltage signals. The voltage monitor generates a voltage monitor signal based on the sense signal that indicates a state of the IC.
    Type: Application
    Filed: August 24, 2014
    Publication date: February 25, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventor: Nishant Singh Thakur
  • Publication number: 20160054995
    Abstract: In accordance with at least one embodiment, a processor system is disclosed having a SIMD processor device that has a plurality of subsidiary processing elements that are controlled to process multiple data concurrently. In accordance with at least one embodiment, the SIMD processor is a vector processor (VPU) having a plurality of vector Arithmetic Units (AUs) as subsidiary processing elements, and the VPU executes an instruction to transfer table information from a global memory of the VPU to a plurality of local memories accessible by each AU. The VPU also executes an instruction that results in each processing element performing a table lookup from a table stored at its local memory. In response to the instruction, this table lookup uses a portion of a lookup value to access information from the table, and uses another portion of the lookup information to calculate an interpolated resultant based upon the accessed information.
    Type: Application
    Filed: August 20, 2014
    Publication date: February 25, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Leo G. Dehner, Jayakrishnan C. Mundarath, Peter Z. Rashev
  • Publication number: 20160056099
    Abstract: A semiconductor device has an on-die decoupling capacitor that is shared between alternative high-speed interfaces. A capacitance pad is connected to the decoupling capacitor and internal connection pads are connected respectively to the alternative interfaces. Internal connection bond wires connect the decoupling capacitor to the selected interface through the capacitance pad and the internal connection pads in the same process as connecting the die to external electrical contacts of the device.
    Type: Application
    Filed: August 24, 2014
    Publication date: February 25, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Shailesh Kumar, Vikas Garg, Sumit Varshney, Chetan Verma
  • Publication number: 20160056741
    Abstract: A device for determining a rotor position in a polyphase electric motor has a power control unit for applying drive voltages according to a pulse width modulation scheme so as to synchronously drive the motor. A measurement unit is arranged for measuring a voltage value on a respective phase by determining a zero-crossing interval where the phase current is around zero, disconnecting the phase from the respective drive voltage during the zero-crossing interval, and measuring the voltage value when the drive voltage of a first other phase is the supply voltage and the drive voltage of a second other phase is the zero voltage. A position unit is arranged for determining the rotor position based on the voltage value.
    Type: Application
    Filed: March 28, 2013
    Publication date: February 25, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Ivan LOVAS, Viktor BOBEK