Abstract: An integrated circuit with a testable power-on-reset (POR) circuit includes a voltage divider, an inverter, a level-shifter, a buffer and a flip-flop. The voltage divider receives a first supply voltage and generates a second supply voltage. The POR circuit receives the second supply voltage and generates a POR voltage signal when the second supply voltage exceeds a POR de-assertion threshold. The level-shifter receives the POR voltage signal and an inverted POR voltage signal from the inverter circuit and generates a level-shifted POR voltage signal at a voltage level of the first supply voltage. The buffer receives the level-shifted POR voltage signal and outputs a delayed level-shifted POR voltage signal. The flip-flop receives the first supply voltage as data input, the delayed level-shifted POR voltage signal as clock input, the level-shifted POR voltage signal as reset input, and outputs a voltage-monitor signal at the voltage level of the first supply voltage.

Abstract: Systems and apparatus are provided for solid-state oscillators and related resonant circuitry. An exemplary oscillator system includes an amplifier having an amplifier input and an amplifier output and resonant circuitry coupled between the amplifier output and the amplifier input. In exemplary embodiments, the resonant circuitry includes an annular resonance structure that is substantially symmetrical and includes a pair of arcuate inductive elements. In accordance with one or more embodiments, the resonant circuitry includes an additional inductive element that is capacitively coupled to the annular resonance structure via an air gap to improve the quality factor of the resonant circuitry.

Abstract: A tamper detector has tamper detection logic connected to tamper detection ports through a tamper detection interface. A real-time clock (RTC) provides a clock signal and has a battery. A processor is powered by an external power supply in a powered operational mode and has a power-off mode. In a wake-up configuration, a wake-up signal on a specific I/O port awakens the external power supply from the power-off mode to supply power to the RTC and the tamper detection interface when power from the battery is unavailable. The tamper detection ports continue to function despite removal or discharge of the battery without ESD concerns. The specific I/O port optionally may be configured for passive tamper detection.

Abstract: A method and apparatus are provided for manufacturing a lead frame based thermally enhanced package (9) with exposed heat spreader lid array (96) designed to be optimized for compression mold encapsulation of an integrated circuit die (94) by including a perimeter reservoir regions (97r) in each heat spreader lid (96) for movement of mold compound (98) displaced during the mold compression process.

Abstract: An interposer for a packaged semiconductor device is formed by applying an encapsulant to (e.g., by overmolding or applying lamination of tapes to) a perforated metal foil having vertical metal tabs that form the vertical metal vias in the interposer. A solid metal foil can be stamped using a micro-stamping tool to form the perforated foil and vertical tabs. Bump pads and/or re-distribution layer (RDL) traces are formed (e.g., using wafer fabrication processes or by applying flexible tape RDL layers) on the top and back sides of the foil to complete the manufacturing process. Such interposers can be cheaper to manufacture than conventional interposers having silicon or glass substrates with through-silicon vias (TSVs) formed using wafer fabrication processes.

Abstract: Methods and systems are disclosed for digital control for regulation of program voltages for non-volatile memory (NVM) systems. The disclosed embodiments dynamically adjust program voltages based upon parameters associated with the cells to be programmed in order to account for IR (current-resistance) voltage drops that occur within program voltage distribution lines. Other voltage variations can also be accounted for with these dynamic adjustments, as well. The parameters for cells to be programmed can include, for example, cell address locations for the cells to be programmed, the number of cells to be programmed, and/or other desired parameters associated with the cells to be programmed. The disclosed embodiments use digital control values obtained from lookup tables based upon the cell parameters to adjust output voltages generated by voltage generation circuit blocks used to program the selected cells thereby tuning the program output voltage level to a predetermined desired level.

Abstract: An integrated circuit includes a set of electronic circuits, a voltage regulator, and a power management module. The power management module includes a set of dummy circuits connected to the set of electronic circuits, a control signal generator, a counter and a shift register. The control signal generator generates a control signal based on the current consumption of the set of electronic circuits dropping below a threshold value over a predefined period of time. The counter generates a count signal for a predetermined time period when the control signal is activated. The shift register receives the count signal, enables the dummy circuits when the count signal is received, and disables the dummy circuits in a daisy chain fashion during the predetermined time period.

Abstract: A cache lock validation apparatus for a cache having sets of cache lines and coupled to a cache controller. The apparatus includes a memory coupled to a processor. The memory includes test case data related to an architecture of the cache. The processor selects a first set of the sets of cache lines and generates a corresponding first group of addresses and an overflow status address. The processor instructs the cache controller to sequentially lock the first group of addresses and the overflow status address. The processor checks a status of an overflow bit in a status register of the cache controller upon locking the overflow status address, and generates a FAIL status signal when the overflow bit is reset.

Abstract: A semiconductor device has a multi-wire lead and a die having a multi-site bond pad. A shielding wire and a guarded wire both extend from the multi-wire lead to the multi-site bond pad. The shielding wire (or wires) provide active shielding to the guarded wire by simultaneously transmitting the same signal as the guarded wire between the multi-wire lead the multi-site bond pad.

Abstract: A floating point value can represent a number or something that is not a number (NaN). A floating point value that is a NaN having data field that stores information, such as a propagation count that indicates the number of times a NaN value has been propagated through instructions. A NaN evaluation instruction can determine whether one or more operands is a NaN operand of a particular type, and if so can generate a result that is a NaN of a different type. An exception can be generated based upon the NaN of the different type being provided as a resultant.

Abstract: A voltage regulation subsystem for a microprocessor has both internal and external regulation modes. An internal auxiliary voltage regulator is selectively enabled to overdrive the voltage. The enablement of the auxiliary voltage regulator is contingent upon a comparison of bandgap references of the internal and external regulators used in the respective regulation modes, which boosts the supply voltage, enables circuitry supplied by the external regulator (with the assistance of auxiliary voltage regulators) to boot robustly in extreme Process-Voltage-Temperature (PVT) conditions.

Abstract: A method of automatically generating a set of test layouts for testing a design rule checking tool is described. A layout is a point in a space of several coordinates, and the design rule comprises N design constraints numbered 1 to N, wherein N is greater or equal two and each design constraint is a boolean-valued function of one or more of the coordinates. The set of test layouts includes: one or more zero-error layouts; one or more one-error layouts; and one or more two-error layouts. A zero-error layout is a layout that satisfies all of the design constraints. A one-error layout is a layout that violates exactly one of the design constraints. A two-error layout is a layout that violates exactly two of the design constraints.

Abstract: An oscillator circuit comprising at least a first component arranged to be statically calibrated to calibrate the oscillator circuit to achieve a symmetrical frequency/temperature profile for the oscillator circuit. The oscillator circuit further comprises at least one further component arranged to be dynamically calibrated to enable an oscillating frequency of the oscillator circuit to be dynamically adjusted, and at least one temperature compensation component arranged to receive at least one temperature indication for the oscillator circuit and to dynamically adjust the at least one further component based at least partly on the at least one received temperature indication. In some examples, the at least one temperature compensation component is arranged to dynamically adjust the at least one further component based on a standardized temperature compensation scheme.

Abstract: A device includes a semiconductor substrate having a surface, a trench in the semiconductor substrate extending vertically from the surface, a body region laterally adjacent the trench, spaced from the surface, having a first conductivity type, and in which a channel is formed during operation, a drift region between the body region and the surface, and having a second conductivity type, a gate structure disposed in the trench alongside the body region, recessed from the surface, and configured to receive a control voltage is applied to control formation of the channel, and a gate dielectric layer disposed along a sidewall of the trench between the gate structure and the body region. The gate structure and the gate dielectric layer have a substantial vertical overlap with the drift region such that electric field magnitudes in the drift region are reduced through application of the control voltage.

Abstract: A method of forming a semiconductor structure uses a substrate. A first insulating layer is formed over the substrate. An amorphous silicon layer is formed over the first insulating layer. Heat is applied to the amorphous silicon layer to form a plurality of seed nanocrystals over the first insulating layer. Silicon is epitaxially grown on the plurality of seed nanocrystals to leave resulting nanocrystals.

Abstract: An on-board reset circuit for a system-on-chip (SOC) addresses the problem of meta-stability in flip-flops on asynchronous reset that arises when different power domains or reset domains receive resets from different sources. To ameliorate the problem, a reset signal is asserted and de-asserted while the clocks are gated. The clocks are re-instated for a minimum period of time following assertion (or de-assertion) so that logic having synchronous reset can also receive the reset.

Abstract: The present application relates to a method and a processing system for automated managing of the usage of alternative code. Code sections including original code and alternative code are retrieved from a code basis and the retrieved code is analyzed to detect an alternative code section. A condition definition associated with the identified alternative code section is further retrieved and the condition of the retrieved condition definition is evaluated. The identified alternative code section is activated in accordance with the evaluation result.

Abstract: An optical die probe wafer testing circuit arrangement and associated testing methodology are described for mounting a production test die (157) and surrounding scribe grid (156) to a test head (155) which is positioned over a wafer (160) in alignment with a die under test (163) and surrounding scribe grid (161, 165), such that one or more optical deflection mirrors (152, 154) in the test head scribe grid (156) are aligned with one or more optical deflection mirrors (162, 164) in the scribe grid (161, 165) for the die under test (163) to enable optical die probe testing on the die under test (163) by directing a first optical test signal (158) from the production test die (157), through the first and second optical deflection mirrors (e.g., 152, 162) and to the first die.

Abstract: A semiconductor device includes a receiver system having a first set of amplifiers, a second set of amplifiers, and an automatic gain control (AGC) module to receive first high and low detection signals from a first peak detector, and receive second high and low detection signals from a second peak detector. When the first high detection signal is set, a step decrease in at least one of a first gain control signal and a second gain control signal is taken. When the first high detection signal is not set and the second high detection signal is set, a second step decrease in at least one of the first gain control signal and the second gain control signal is taken. The first gain control signal is used in the first set of amplifiers. The second gain control signal is used in the second set of amplifiers.

Abstract: A bypass system and method that mimics read timing of a memory system which includes a self-timing circuit and a sense amplifier. When prompted, the self-timing circuit initiates the sense amplifier to evaluate its differential input. The bypass system includes a memory controller that is configured to provide a bypass enable, to prompt the self-timing circuit, and to disable normal read control when a bypass read operation is indicated. A bypass latch latches an input data value, converts the input data value into an input complementary pair, and provides the complementary pair to the differential input of the sense amplifier. The sense amplifier, when initiated, evaluates the input complementary pair after its self-timing period and provides an output data value. The bypass latch and self-timing circuit may operate synchronous with a read clock in a read domain of the memory for more accurate memory read timing.