Abstract: A digital to analog converter including a current source for providing a master current, a first sub digital to analog converter coupled to the current source which generates a plurality of currents, and a second sub digital to analog converter coupled to at least one of the plurality of currents from the first sub digital to analog converter which generates a second plurality of currents. The digital to analog converter also includes an overlap adjustment circuit coupled with the second sub digital to analog converter which adds current. The digital to analog converter is configured to operate in a first mode for generating a sine wave with a first bit level accuracy and, when in the first mode, the overlap adjustment circuit adds no current.

Abstract: Embodiments of methods for forming a device include performing an oxidation inhibiting treatment to exposed ends of first and second device-to-edge conductors, and forming a package surface conductor to electrically couple the exposed ends of the first and second device-to-edge conductors. Performing the oxidation inhibiting treatment may include applying an organic solderability protectant coating to the exposed ends, or plating the exposed ends with a conductive plating material. The method may further include applying a conformal protective coating over the package surface conductor. An embodiment of a device formed using such a method includes a package body, the first and second device-to-edge conductors, the package surface conductor on a surface of the package body and extending between the first and second device-to-edge conductors, and the conformal protective coating over the package surface conductor.

Abstract: A processing system includes a processor core, a peripheral component, and a flip-flop unit in at least one of the processor core and the peripheral component. The flip-flop unit can include a master latch, and two slave latches coupled to an output of the master latch. The first slave latch is formed over a first doped well region of a semiconductor substrate. The second slave latch is formed over a second doped well region of the semiconductor substrate. A comparator is coupled to an output of the first slave latch and to an output of the second slave latch. An output of the comparator indicates whether a state stored in the first slave latch is the same as a state stored in the second slave latch.

Abstract: A CMOS cell incorporated on an integrated circuit including a PMOS transistor and an NMOS transistor. The current terminals of the PMOS and NMOS transistors are coupled in series between a lower voltage supply rail and a reference rail. The well connection of the PMOS transistor is coupled to an upper voltage supply rail having a voltage level greater than the lower voltage supply rail. The CMOS cell has low voltage swing and low leakage current to reduce power consumption. A second PMOS and NMOS transistor pair may be included and coupled in similar manner and to the first PMOS and NMOS pair to form a non-inverting cell. The PMOS transistors may be implemented in an N-well that is conductively tied to the upper supply voltage rail to avoid isolation barriers. The cell may be used in a clock tree to significantly reduce power consumption of the integrated circuit.

Abstract: A packaged semiconductor device may include a termination surface having terminations configured as leadless interconnects to be surface mounted to a printed circuit board. A first flange has a first surface and a second surface. The first surface provides a first one of the terminations, and the second surface is opposite to the first surface. A second flange also has a first surface and a second surface, with the first surface providing a second one of the terminations, and the second surface is opposite to the first surface. A die is mounted to the second surface of the first flange with a material having a melting point in excess of 240° C. An electrical interconnect extends between the die and the second surface of the second flange opposite the termination surface, such that the electrical interconnect, first flange and second flange are substantially housed within a body.

Abstract: An integrated circuit package includes a die having a first substrate implementing an integrated circuit comprising circuit elements. The die includes a first plurality of metal layers implementing a first portion of a metal interconnect structure for the integrated circuit. The die also includes a first plurality of pads at or overlying a top metal layer of the first plurality of metal layers. The integrated circuit package includes an interposer having a second plurality of metal layers implementing a second portion of the metal interconnect structure. The interposer includes a second plurality of pads at or overlying a top metal layer of the second plurality of metal layers. A plurality of solder structures couple the first and second pluralities of pads. The first and second portions of the metal interconnect structure together complete a signal path between two or more circuit blocks of the integrated circuit.

Abstract: An integrated circuit comprising a power supply node, a ground node and a gated domain coupled between the power node and the ground node. A Charged Device Model electrostatic discharge protection module is provided for shunting electrical energy of a CDM ESD event away from the gated domain. A gating switch makes an electrical connection in a connected state between the gated domain and at least one of the power node and the ground node. ESD gating control circuitry is coupled to the CDM ESD protection module and controls shunting of energy away from the gated domain by the CDM ESD protection module, thereby avoiding the energy flowing through the gated domain. The ESD gating control circuitry inhibits actuation of the CDM ESD protection module to prevent response to CDM ESD events when the gating domain is powered-up.

Abstract: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

Abstract: A semiconductor memory device and method of operation are provided for a multi-bank memory array (100) with an address fault detector circuit (24, 28) connected to split word lines (WLn-WLm) across multiple banks, where the address fault detector circuit includes at least a first MOSFET transistor (51-54) connected to each word line for detecting an error-free operation mode and a plurality of different transient address faults including a “no word line select,” “false word line select,” and “multiple word line select” failure mode at one of the first and second memory banks. In selected embodiments, the address fault detector provides resistive coupling (33-40) between split word lines across multiple banks to create interaction or contention between split word lines to create a unique voltage level on a fault detection bit line during an address fault depending on the fault type.

Abstract: A transmission node includes a digital front-end device that provides functional clocks for JESD204B based data transmission. The front-end device includes a PLL for generating a phase locked clock based on a device clock of the front-end device, a clock dividing unit for generating the functional clocks by dividing the phase locked clock, a clock gating unit connected between the PLL and the clock dividing unit, and a system reference signal sampling unit for timing radio frame boundaries. The clock gating unit gates the phase locked clock to align the functional clocks with the device clock within a predetermined number of cycles of the phase locked clock, upon locking of the PLL or receipt of a system resynchronization request. The system reference signal sampling unit samples the system reference signal with zero-cycle latency between device clock and phase locked clock.

Abstract: A compute engine is arranged to retrieve a block of image data corresponding to a rectangular image region; calculate integral image values for all pixels of the block of image data to obtain an integral image of the block of image data; and store the integral image of the block in the one or more memories. The main processor determines which blocks of image data comprise pixels of the predefined rectangular region of the image, and defines a respective rectangular region part as the pixels of the block that belong to the predefined rectangular region of the image; calculate a HAAR feature of the rectangular region part for each block of image data that comprise pixels of the predefined rectangular region of the image; and add the HAAR features of the rectangular region parts to obtain the HAAR feature of the predefined rectangular region of the image.

Abstract: A system and method for packaging a semiconductor device that includes a structure to reduce electromagnetic coupling are presented. The semiconductor device is formed on a substrate. A cover is affixed to the substrate so as to extend over the semiconductor device. An isolation structure of electrically conductive material is coupled to the cover in between components of the semiconductor device, with the isolation structure being configured to reduce inductive coupling between those components during an operation of the semiconductor device. In one version, the isolation structure includes a first leg extending from a ground connection along a side wall of the cover to a cross member contiguous with a primary cover wall that extends over the semiconductor device between the components to be isolated electromagnetically.

Abstract: A current generator circuit includes at least one current generation component arranged to generate an output current of the current generator circuit, at least one absolute current calibration component arranged to enable calibration of an absolute current value of the output current, and at least one temperature coefficient calibration component arranged to enable calibration of a temperature coefficient characteristic of the output current. The at least one temperature coefficient calibration component is further arranged to be in a passive state at a reference temperature.

Abstract: Semiconductor structures and methods for making semiconductor structures include a split gate non-volatile memory (NVM) cell in an NVM region. A charge storage layer, a first conductive layer, and a capping layer are formed over the substrate, which are patterned to form a control gate stack in the NVM region of the substrate. A high-k dielectric layer, a metal layer, and a second conductive layer are formed over the substrate. The second conductive layer and the metal layer are patterned to form remaining portions of the second conductive layer and the metal layer over and adjacent to a first side of the control gate stack. The remaining portion of the second conductive layer is removed to form a select gate stack, which includes the remaining portion of the metal layer. A stressor layer is formed over the substrate.

Abstract: An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.

Abstract: A system includes a voltage converter configured to provide a first output voltage at a first output terminal, wherein the first output voltage is from a first group comprising a first high regulation voltage, a first low regulation voltage, and a battery voltage. A first plurality of circuits has power supply terminals coupled to the first output terminal. A power control circuit uses information about operational states of the plurality of circuits to direct the voltage converter to provide the first output voltage from the first group appropriate for the operational states of the first plurality of circuits.

Abstract: An integrated circuit device comprising at least one cut-through forwarding module. The cut-through forwarding module comprises at least one receiver component arranged to receive data to be forwarded, and to generate a request for transmission of a block of data upon receipt thereof, and at least one controller unit arranged to execute at least one thread for processing requests generated by the at least one receiver component. The at least one controller unit is arranged to set a priority context for the at least one thread, and to schedule an execution of the at least one thread based at least partly on the priority context therefor.

Abstract: Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of stacked microelectronic packages. In one embodiment, the method includes producing a partially-completed stacked microelectronic package including a package body having a vertical package sidewall, a plurality microelectronic devices embedded within the package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the vertical package sidewall. A flowable conductive material is applied on the vertical package sidewall and contacts the package edge conductors. Selected portions of the flowable conductive material are then removed to define, at least in part, electrically-isolated sidewall conductors electrically coupled to different ones of the package edge conductors.

Abstract: Embodiments of a method for fabricating System-in-Packages (SiPs) are provided, as are embodiments of a SiP. In one embodiment, the method includes producing a first package including a first molded package body having a sidewall. A first leadframe is embedded within the first molded package body and having a first leadframe lead exposed through the sidewall. In certain implementations, a semiconductor die may also be encapsulated within the first molded package body. A Surface Mount Device (SMD) is mounted to the sidewall of the first molded package body such that a first terminal of the SMD is in ohmic contact with the first leadframe lead exposed through the sidewall.

Abstract: Fan-Out Wafer Level Packages (FO-WLPs) and methods for fabricating FO-WLPs containing Embedded Ground Planes (EGPs) and backside EGP interconnect structures are provided. In one embodiment, the method includes electrically coupling an EGP to a backside terminal of a first microelectronic device through a backside EGP interconnect structure. A molded package body is formed around the first microelectronic device, the EGP, and the EGP interconnect structure. The molded package body has a frontside at which the EGP is exposed. One or more Redistribution Layers are formed over the frontside of the molded packaged body and contain at least one interconnect line electrically coupled to the backside contact through the EGP and the backside EGP interconnect structure.